Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2009
10/27/2009US7609570 Switched capacitor charge sharing technique for integrated circuit devices enabling signal generation of disparate selected signal values
10/27/2009US7609565 External clock tracking pipelined latch scheme
10/27/2009US7609563 Simultaneous read circuit for multiple memory cells
10/27/2009US7609558 Non-volatile semiconductor memory device
10/27/2009US7609555 Sensing circuit for flash memory device operating at low power supply voltage
10/27/2009US7609550 Compact virtual ground diffusion programmable ROM array architecture, system and method
10/27/2009US7609547 Biosensor and sensing cell array using the same
10/27/2009US7609546 Multivalue memory storage with two gating transistors
10/27/2009US7609545 Semiconductor device
10/27/2009US7609544 Programmable semiconductor memory device
10/27/2009US7609543 Method and implementation of stress test for MRAM
10/27/2009US7609542 Implementing enhanced SRAM read performance sort ring oscillator (PSRO)
10/27/2009US7609541 Memory cells with lower power consumption during a write operation
10/27/2009US7609540 Serial bus controller using nonvolatile ferroelectric memory
10/27/2009US7609354 Active matrix substrate and liquid crystal display device with the same
10/27/2009US7608876 Merged MOS-bipolar capacitor memory cell
10/27/2009US7608855 Polymer dielectrics for memory element array interconnect
10/27/2009US7607756 Printhead assembly for a wallpaper printer
10/22/2009WO2009129053A1 Non-volatile memory with sidewall channels and raised source/drain regions
10/22/2009WO2009128486A1 Method of making record on magnetic memory device
10/22/2009WO2009128485A1 Method of making record in magnetic memory device
10/22/2009WO2009128044A1 Method of reducing the occurrence of burn-in due to negative bias temperature instability
10/22/2009WO2009127187A2 Apparatus and method for producing switchable temporary magnetism in oxidic materials by means of electrical fields
10/22/2009WO2009059071A3 High speed low power magnetic devices based on current induced spin-momentum transfer
10/22/2009US20090262592 Method and apparatus for synchronization of row and column access operations
10/22/2009US20090262590 Semiconductor memory device
10/22/2009US20090262581 Non volatile memory
10/22/2009US20090262575 Thin film magnetic memory device capable of conducting stable data read and write operations
10/22/2009US20090262574 Semiconductor device
10/22/2009US20090262573 Multilevel nonvolatile memory device using variable resistance
10/22/2009US20090262572 Multilayer storage class memory using externally heated phase change material
10/22/2009US20090262571 Magnetic random access memory and operating method of magnetic random access memory
10/22/2009US20090262570 Giant magnetoresistance (GMR) memory device
10/22/2009US20090262569 Semiconductor memory device with stacked memory cell structure
10/22/2009US20090262568 Semiconductor memory device
10/22/2009US20090262163 Inkjet nozzle incorporating piston actuator
10/22/2009US20090262149 Print Media Cartridge For A Camera
10/22/2009US20090262105 Light emitting display, display panel, and driving method thereof
10/22/2009US20090261390 semiconductor memory device and a method of manufacturing the same
10/22/2009DE10344020B4 Halbleiterspeicherbaustein mit Bitleitungsspannungsausgleich Semiconductor memory device having Bitleitungsspannungsausgleich
10/22/2009DE102009017773A1 Storage cell for storing binary condition based on written indication and binary written masking value, has direct access storage or record data latch storage, and switch, with which masking device is coupled
10/21/2009EP2110817A1 Write-once optical disc, and method and apparatus for allocating spare area on write-once optical disc
10/21/2009EP2109890A2 Depletion-mode mosfet circuit and applications
10/21/2009EP1623431B1 A non-volatile memory having a bias on the source electrode for hci programming
10/21/2009CN101563729A Hybrid solid-state memory system having volatile and non-volatile memory
10/21/2009CN101562229A Resistance-variable storing device
10/21/2009CN101562228A Non-volatile resistance memory element and preparation method thereof
10/21/2009CN101562042A Sensitive amplifier suitable for random memory
10/21/2009CN101562041A Method, device and network device for realizing SDRAM table search
10/21/2009CN101561887A 射频标识设备 A radio frequency identification device
10/21/2009CN101561707A 存储芯片 Memory chip
10/21/2009CN100553005C Heating layer for reducing phase-change memory device unit power consumption and its manufacturing method
10/21/2009CN100552819C Structure for providing reference voltage in multibit memory
10/21/2009CN100552818C Semiconductor storage
10/21/2009CN100552817C Static random access memory cell with improved stability and its formation method
10/21/2009CN100552816C Semiconductor memory device
10/21/2009CN100552815C 半导体器件 Semiconductor devices
10/21/2009CN100552814C Internal memory and bias method
10/21/2009CN100552813C Semiconductor storage circuit and laying-out method thereof
10/21/2009CN100552812C Memory and access devices
10/21/2009CN100552811C Ferromagnetic memory device and its picking-up method
10/21/2009CN100552810C Magnetic storage unit and producing method thereof
10/21/2009CN100552809C MRAM cell, array, and MRAM cell programming method
10/20/2009US7607067 Method and apparatus for accessing memory
10/20/2009US7606101 Circuit and method for controlling a clock synchronizing circuit for low power refresh operation
10/20/2009US7606096 Semiconductor integrated circuit device
10/20/2009US7606079 Reducing power consumption during read operations in non-volatile storage
10/20/2009US7606075 Read operation for NAND memory
10/20/2009US7606074 Word line compensation in non-volatile memory erase operations
10/20/2009US7606068 Memory with a core-based virtual ground and dynamic reference sensing scheme
10/20/2009US7606066 Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
10/20/2009US7606065 Three-dimensional magnetic memory having bits transferrable between storage layers
10/20/2009US7606064 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
10/20/2009US7606063 Magnetic memory device
10/20/2009US7606062 Ultra low voltage and minimum operating voltage tolerant register file
10/20/2009US7606061 SRAM device with a power saving module controlled by word line signals
10/20/2009US7606060 Eight transistor SRAM cell with improved stability requiring only one word line
10/20/2009US7606059 Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
10/20/2009US7606057 Metal line layout in a memory cell
10/20/2009US7605028 Method of forming a memory device having a storage transistor
10/20/2009US7604345 Digital camera with printing assembly
10/15/2009WO2009126874A2 Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same
10/15/2009WO2009126499A1 Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
10/15/2009WO2009105204A3 Memory device with network on chip methods, apparatus, and systems
10/15/2009WO2009102802A3 Magnetic domain patterning using plasma ion implantation
10/15/2009US20090259808 Methods of Sanitizing a Flash-Based Data Storage Device
10/15/2009US20090257299 Software refreshed memory device and method
10/15/2009US20090257298 Semiconductor device having single-ended sensing amplifier
10/15/2009US20090257275 Seasoning phase change memories
10/15/2009US20090257274 Semiconductor memory device
10/15/2009US20090257273 2t sram cell structure
10/15/2009US20090257272 Reduced size charge pump for dram system
10/15/2009US20090257271 Resistance change element and method of manufacturing the same
10/15/2009US20090257270 Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
10/15/2009US20090257269 Low-Complexity Electronic Circuits and Methods of Forming the Same
10/15/2009US20090257268 Semiconductor device having single-ended sensing amplifier
10/15/2009US20090257267 Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same
10/15/2009US20090257266 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
10/15/2009US20090257265 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
10/15/2009US20090257264 Memory and method of evaluating a memory state of a resistive memory cell
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