| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 04/30/2009 | US20090109741 Determining history state of data in data retaining device based on state of partially depleted silicon-on-insulator |
| 04/30/2009 | US20090109740 Semiconductor device using magnetic domain wall movement |
| 04/30/2009 | US20090109739 Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion |
| 04/30/2009 | US20090109738 Phase-change memory device with error correction capability |
| 04/30/2009 | US20090109737 Method of restoring variable resistance memory device |
| 04/30/2009 | US20090109736 Magnetic random access memory and operation method thereof |
| 04/30/2009 | US20090109735 Design structure for initializing reference cells of a toggle switched mram device |
| 04/30/2009 | US20090109734 Non-volatile sram cell |
| 04/30/2009 | US20090109733 Design structure for sram active write assist for improved operational margins |
| 04/30/2009 | US20090109732 Asymmetrical sram cell with separate word lines |
| 04/30/2009 | US20090109731 Dielectric layers and memory cells including metal-doped alumina |
| 04/30/2009 | US20090109730 Resistance memory element |
| 04/30/2009 | US20090109729 Resistance change memory device and method for erasing the same |
| 04/30/2009 | US20090109728 Resistance change memory device |
| 04/30/2009 | US20090109727 Erase, programming and leakage characteristics of a resistive memory device |
| 04/30/2009 | US20090109726 Non-linear conductor memory |
| 04/30/2009 | DE102008039561A1 Integrierte Schaltkreise, Verfahren zum Herstellen eines integrierten Schaltkreises und Speichermodule Integrated circuits, processes for manufacturing an integrated circuit and memory modules |
| 04/29/2009 | EP2053613A1 Synthetic-ferrimagnet sense-layer for high density MRAM applications |
| 04/29/2009 | EP2053612A2 Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier |
| 04/29/2009 | EP2052390A2 Method and apparatus for reading a multi-level passive element memory cell array |
| 04/29/2009 | EP2052389A2 Solid state storage element and method |
| 04/29/2009 | EP1977425A4 Multiple port memory having a plurality of parallel connected trench capacitors in a cell |
| 04/29/2009 | EP1687838A4 A high temperature memory device |
| 04/29/2009 | CN101421793A NAND memory device column charging |
| 04/29/2009 | CN101420013A Resistor conversion memory cell |
| 04/29/2009 | CN101420012A Non-volatile resistor transition type memory embedded into nano-crystalline granule |
| 04/29/2009 | CN101419966A Semiconductor integrated circuit device |
| 04/29/2009 | CN101419940A Method for making memory cell assembly and the memory cell assembly |
| 04/29/2009 | CN101419836A Phase change RAM |
| 04/29/2009 | CN100483944C Mixed latch trigger |
| 04/29/2009 | CN100483767C Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 04/29/2009 | CN100483714C Circuit for preventing latch-up in cmos memory cell |
| 04/29/2009 | CN100483558C Memory independent on testing group function and system for replacing fault stored word |
| 04/29/2009 | CN100483557C Circuit and method for test and repair |
| 04/29/2009 | CN100483551C Semiconductor memory device |
| 04/29/2009 | CN100483550C Special-purpose redundant circuit for different operations in internal memory device and its operation method |
| 04/29/2009 | CN100483549C Complementary bit pcram sense amplifier and method of operation |
| 04/29/2009 | CN100483547C SRAM array with improved cell stability |
| 04/29/2009 | CN100483546C Software refreshed memory device and method |
| 04/29/2009 | CN100483545C Programmable conductor random access memory and method for sensing same |
| 04/29/2009 | CN100483544C Magnetic random access memory having a vertical write line |
| 04/29/2009 | CN100483543C Magnetic random access memory device |
| 04/29/2009 | CN100483542C Nonvolatile memory cell and non-volatile semiconductor memory device |
| 04/29/2009 | CN100483540C Resistance crosspoint storage array with charge injection differential read-out amplifier |
| 04/29/2009 | CN100483363C Semiconductor integrated circuit and power-saving control method thereof |
| 04/28/2009 | US7526713 Low power cost-effective ECC memory system and method |
| 04/28/2009 | US7526601 Data rewriting method for flash memory using partial erases |
| 04/28/2009 | US7525871 Semiconductor integrated circuit |
| 04/28/2009 | US7525868 Multiple-port SRAM device |
| 04/28/2009 | US7525862 Methods involving resetting spin-torque magnetic random access memory with domain wall |
| 04/28/2009 | US7525848 Method for erasing and changing data of floating gate flash memory |
| 04/28/2009 | US7525846 Memory device |
| 04/28/2009 | US7525845 Non-volatile semiconductor storage device |
| 04/28/2009 | US7525844 Semiconductor memory device with MOS transistors each having floating gate and control gate and method of controlling the same |
| 04/28/2009 | US7525838 Flash memory device and method for programming multi-level cells in the same |
| 04/28/2009 | US7525837 Magnetoresistive effect element and magnetic memory |
| 04/28/2009 | US7525836 Non-imprinting memory with high speed erase |
| 04/28/2009 | US7525835 Method and apparatus for reduced power cell |
| 04/28/2009 | US7525834 SRAM cell structure and circuits |
| 04/28/2009 | US7525833 Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers |
| 04/28/2009 | US7525832 Memory device and semiconductor integrated circuit |
| 04/28/2009 | US7525831 Method for improving sensing margin of electrically programmable fuses |
| 04/28/2009 | US7525830 Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell |
| 04/28/2009 | US7525410 Point contact array, not circuit, and electronic circuit using the same |
| 04/28/2009 | US7524047 Print roll cartridge with an ink supply core for a camera system |
| 04/28/2009 | US7524031 Inkjet printhead nozzle incorporating movable roof structures |
| 04/28/2009 | US7524018 Printer cartridge with capping seal surrounding orifice surface |
| 04/23/2009 | WO2009052527A1 Managing memory systems containing components with asymmetric characteristics |
| 04/23/2009 | WO2009052525A1 Managing memory systems containing components with asymmetric characteristics |
| 04/23/2009 | WO2009052371A2 Ground level precharge bit line scheme for read operation in spin transfer torque magnetoresistive random access memory |
| 04/23/2009 | WO2009052013A1 Multivalue memory storage with two gating transistors |
| 04/23/2009 | WO2009052012A1 Selectively-powered memories |
| 04/23/2009 | WO2009051729A1 Method of magnetic tunneling layer processes for spin-transfer torque mram |
| 04/23/2009 | WO2009051441A1 Method for recording of information in magnetic recording element and method for recording of information in magnetic random access memory |
| 04/23/2009 | WO2009051435A1 Ultrafast magnetic recording element and nonvolatile magnetic random access memory using the magnetic recording element |
| 04/23/2009 | WO2007061666A3 Volatile memory elements with boosted output voltages for programmable logic device integrated circuits |
| 04/23/2009 | WO2007058777A3 Radiation tolerant combinational logic cell |
| 04/23/2009 | US20090103402 Method and apparatus for generating absolute time in pregroove data |
| 04/23/2009 | US20090103369 Non-Volatile Memory and Method with Shared Processing for an Aggregate of Read/Write Circuits |
| 04/23/2009 | US20090103368 Semiconductor memory device |
| 04/23/2009 | US20090103367 One-transistor cell semiconductor on insulator random access memory |
| 04/23/2009 | US20090103364 Serial interface nand |
| 04/23/2009 | US20090103358 Reducing programming error in memory devices |
| 04/23/2009 | US20090103356 Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
| 04/23/2009 | US20090103355 Nonvolatile semiconductor memory and data programming/erasing method |
| 04/23/2009 | US20090103354 Ground Level Precharge Bit Line Scheme for Read Operation in Spin Transfer Torque Magnetoresistive Random Access Memory |
| 04/23/2009 | US20090103353 Semiconductor memory device |
| 04/23/2009 | US20090103352 DRAM including a reduced storage capacitor |
| 04/23/2009 | US20090103351 Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module |
| 04/23/2009 | US20090103350 Method of Testing an Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Integrated Circuit |
| 04/23/2009 | US20090103349 Semiconductor memory device |
| 04/23/2009 | US20090103348 2t/2c ferroelectic random access memory with complementary bit-line loads |
| 04/23/2009 | US20090103346 Semiconductor device |
| 04/23/2009 | US20090102751 Memory element and display device |
| 04/23/2009 | DE102008048630A1 Speichersystem und Verfahren zum Verwenden eines Speichersystems mit Virtuelladressübersetzungsfähigkeiten Storage system and method of using a memory system with virtual address translation capabilities |
| 04/23/2009 | DE102004062224B4 Halbleitervorrichtung und Halbleitervorrichtungsmodul Semiconductor device and semiconductor device module |
| 04/23/2009 | DE102004028808B4 Speichersystem, das mit einem externen Speichersystem verbunden ist und Verfahren zum Verbinden derartiger Systeme Memory system that is connected to an external storage system and method for connecting such systems |
| 04/23/2009 | CA2702487A1 Ground level precharge bit line scheme for read operation in spin transfer torque magnetoresistive random access memory |
| 04/22/2009 | EP2051259A1 MRAM with resistive property adjustment |
| 04/22/2009 | EP2049341A2 Multifunctional nanoscopy for imaging cells |