Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2012
12/19/2012CN102828241A Low-cost processing method of graphite heater used for monocrystalline silicon production
12/19/2012CN102828239A Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology
12/19/2012CN102828237A Apparatus for preparing zinc selenide/zinc sulfide lamination polycrystal optical material
12/19/2012CN102828236A Self-controlled heating system for monocrystal furnace
12/19/2012CN102828232A Three-dimensional sapphire crystal growing device
12/19/2012CN102828231A Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot
12/19/2012CN102828230A Growing device and method for growing wide plate-shaped bismuth germanate crystal according to descent method
12/19/2012CN102828229A Base of ingot casting crucible
12/19/2012CN102828228A Polycrystalline ingot furnace and its hot door device
12/19/2012CN102828227A Method for preparing anatase TiO2 monocrystals rich in crystal planes of {010}/{101}
12/19/2012CN102828204A Method for preparing needle-shaped silver for electrodes by electrolytic process
12/19/2012CN102828175A Method for forming micro-nano structured iron tungstate on surface of ferrous metal
12/19/2012CN102199373B Graphite alkene-La2NiO4/zinc-aluminum-titanium series corrosion-resistance coating for polycrystalline silicon ingot casting furnace
12/19/2012CN102146580B Seeding mold for growing silicon crystals by using orientated solidification method and crystal growing method
12/19/2012CN102134746B Preparation method of alkali type magnesium chloride whisker
12/19/2012CN101331249B Doped aluminum nitride crystals and methods of making them
12/18/2012US8334192 Method of fabricating gallium nitride substrate
12/18/2012CA2677414C N-type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
12/13/2012WO2012170124A2 Heater assembly for crystal growth apparatus
12/13/2012WO2012169828A2 Apparatus for fabricating ingot
12/13/2012WO2012169801A2 Apparatus for fabricating ingot
12/13/2012WO2012169789A2 Apparatus for fabricating ingot and method for fabricating ingot
12/13/2012WO2012169465A1 SiC SINGLE CRYSTAL AND METHOD FOR MANUFACTURING SAME, SiC WAFER, AND SEMICONDUCTOR DEVICE
12/13/2012WO2012168279A1 Method for synthesizing core/shell nanoparticles and their solution
12/13/2012US20120315427 Single crystal silicon carbide substrate and method of manufacturing the same
12/13/2012DE112010005100T5 Einkristall-Herstellungsvorrichtung Single crystal manufacturing apparatus
12/13/2012DE112004001230B4 Züchtungsverfahren für Nitridhalbleiter-Epitaxieschichten The growth method of nitride semiconductor epitaxial layers
12/12/2012EP2533270A1 Silicon wafer and semiconductor device
12/12/2012EP2532773A1 Method for producing silicon carbide substrate
12/12/2012EP2532022A2 Method for manufacturing galium naitride wafer
12/12/2012CN202602249U Ingot furnace with industrial personal computer line separated from overtemperature alarm line
12/12/2012CN202595346U Resistance type vacuum high-temperature furnace water cooled electrode protective screen
12/12/2012CN202595343U Sapphire substrate annealing furnace
12/12/2012CN202595342U Compressed air emergency device for polycrystalline silicon ingot furnace
12/12/2012CN202595341U Crucible heat shield used for reducing carbon content of cast ingot polycrystal
12/12/2012CN202595340U Ingot furnace with controlled crystal growth thermal field structure
12/12/2012CN202595338U Inner layer heat screen for Kyropoulos-method sapphire crystal furnace
12/12/2012CN202595336U Seed crystal clamping structure
12/12/2012CN202595335U Device for adjusting growth speed of solar 8-inch silicon single crystal rods
12/12/2012CN202595334U Pressure-releasing type graphite crucible
12/12/2012CN202595329U Full-angle window for single crystal furnace adopting Kyropoulos method
12/12/2012CN202595327U Ingot furnace with airflow guide device
12/12/2012CN202595326U Crucible protection device for crystalline silicon ingot furnace
12/12/2012CN202595325U Gas guide device used for crystalline silicon ingot furnace
12/12/2012CN102822397A Epitaxial substrate and method of manufacturing epitaxial substrate
12/12/2012CN102822396A Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by process
12/12/2012CN102822395A Method for producing single crystal 3C-SiC substrate and resulting single-crystal 3C-SiC substrate
12/12/2012CN102822394A Highly insulating/highly stable piezoelectric ltga single crystal, method for producing same, piezoelectric element using said ltga single crystal, and combustion pressure sensor
12/12/2012CN102817082A Preparation method for silicon films
12/12/2012CN102817081A Preparation method of flaky iron sulfide single crystal nano-material
12/12/2012CN102817080A Lead lutetioniobate-lead magnesioniobate-lead titanate ternary-system relaxation ferroelectric monocrystal and preparation method thereof
12/12/2012CN102817079A Method for preparing rare-earth-ion-doped garnet-structured nano-crystals through laser irradiation
12/12/2012CN102817078A Synthesizing method of flower-cluster-shaped structure composed of CuO/ZnO composite oxide porous nano-grade blades
12/12/2012CN102817077A Doping method for transition metal oxide nanowire array
12/12/2012CN102817076A Pr/Yb doped yttrium lithium fluoride monocrystal used for modulation of solar spectrum and preparation method thereof
12/12/2012CN102817075A Master alloy production method by using polycrystalline foundry furnace
12/12/2012CN102817074A In-situ stress control-based self-separation method for III-nitride thick membrane
12/12/2012CN102817073A Method for growing In-rich nonpolar A-surface InGaN film
12/12/2012CN102817072A Preparation method of doping raw material used for growing gem single crystal through edge-defined film-fed growth method
12/12/2012CN102817071A Preparation technology of heat radiation resistant Czochralski polysilicon or monocrystalline silicon
12/12/2012CN102817069A Preparation technology of compound heating heat radiation resistant Czochralski polysilicon or monocrystalline silicon
12/12/2012CN102817068A Preparation method of sodium bismuth titanate-lead titanate piezoelectric monocrystal
12/12/2012CN102817067A Method for preparing rhombohedron single-crystal bismuth ferrite powder by fused salt
12/12/2012CN102814866A Quasi-monocrystal silicon ingot cutting method and silicon wafer manufacturing method
12/12/2012CN102220632B Technical method of N-type Czochralski silicon monocrystal
12/12/2012CN102212867B Novel method for preparing aluminum borate whisker
12/12/2012CN102205981B Preparation method of layered compound metal hydroxide for controlling surface defects and surface potentials
12/12/2012CN102181937B Activating method of corrosive liquid for manufacturing solar polycrystalline silicon wool surface
12/12/2012CN102127810B Basic bismuth nitrate nonlinear crystal material and preparation method and application thereof
12/12/2012CN102112665B Generating a pumping force in a silicon melt by applying a time-varying magnetic field
12/12/2012CN102011189B Tellurium-caesium molybdate crystal, growth of tellurium-caesium molybdate crystal by flux method and application
12/12/2012CN101949054B Method for preparing single-crystal anatase titanium dioxide film
12/12/2012CN101922041B Method for pulling a silicon single crystal
12/12/2012CN101831701B Method for growing n-type transparent conducting ZnO crystal thin film by F doping
12/12/2012CN101638807B Silicon wafer, method for manufacturing the same and method for heat-treating the same
12/12/2012CN101553605B Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element
12/12/2012CN101481824B Method for cleaning polycrystal carbon head material
12/12/2012CN101462944B Iron oxalate crystal and preparation thereof
12/11/2012US8328933 Apparatus and semiconductor co-crystal
12/06/2012WO2012166445A1 Composite active molds and methods of making articles of semiconducting material
12/06/2012WO2012165898A2 Apparatus and method for manufacturing ingot
12/06/2012WO2012165504A1 Oxide superconductor thin film, superconducting fault current limiter, and method for manufacturing oxide superconductor thin film
12/06/2012WO2012164827A1 Vapor phase epitaxy method and light emitting element substrate manufacturing method
12/06/2012WO2012164803A1 Method for selecting polycrystalline silicon bar, and method for producing single-crystalline silicon
12/06/2012WO2012164006A1 Method and apparatus for fabricating free-standing group iii nitride crystals
12/06/2012WO2012164005A1 Method and apparatus for fabricating free-standing group iii nitride crystals
12/06/2012WO2012163976A1 Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification
12/06/2012WO2012163531A1 Device for refining of silicon by directional solidification in an oxygen-containing atmosphere as well as a refining method of silicon
12/06/2012WO2012162794A1 Conjugated copolymers useful in electronics
12/06/2012WO2012125365A3 Automated vision system for a crystal growth apparatus
12/06/2012US20120308758 Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
12/06/2012DE112010005101T5 Epitaxial-wafer und halbleiterelement Epitaxial wafer and semiconductor element
12/06/2012DE102011076860A1 Directional crystallization of silicon ingots, comprises charging crucible of crystallization system containing material to be processed, melting material, and setting stereometric temperature field with planar isothermal surfaces in melt
12/05/2012EP2530187A1 Refining of silicon by directional solidification in an oxygen-containing atmosphere
12/05/2012EP2530184A2 Polysilicon deposition
12/05/2012EP2530048A1 Semiconductor Nanoparticle Production Method, Semiconductor Nanoparticle, and Phosphor Using the Same
12/05/2012DE202012011360U1 Kristalliner Siliciumblock und daraus gefertigter Silicium-Wafer Crystalline silicon ingot and made from this silicon wafer
12/05/2012CN202583787U Electric control system for gallium arsenide single crystal furnace
12/05/2012CN202576653U Single-crystal real-time weighing device
12/05/2012CN202576650U Growth equipment for sapphire crystal
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