| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 05/05/2011 | WO2010119792A9 Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device |
| 05/05/2011 | US20110104906 Method of growing oxide thin films |
| 05/05/2011 | US20110100291 Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
| 05/04/2011 | EP2316989A2 Non-polar (Al, B, In, Ga) quantum well and heterostructure materials and devices |
| 05/04/2011 | CN1649181B Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it |
| 05/04/2011 | CN102046856A Methods and apparatus for deposition reactors |
| 05/04/2011 | CN102041554A Method for producing N-doped SiC nanowires with field emission properties |
| 05/04/2011 | CN102041552A Method for preparing polysilicon membrane |
| 05/04/2011 | CN102041551A Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
| 05/04/2011 | CN102041476A Method for preparing cobalt titanate film by dual-target magnetron sputtering method |
| 05/04/2011 | CN101387008B Carbon nanotube growing apparatus |
| 05/04/2011 | CN101094732B Deposition of silicon-containing films from hexachlorodisilane |
| 05/03/2011 | US7935617 Method to stabilize carbon in Si1-x-yGexCy layers |
| 05/03/2011 | US7935615 III-V nitride semiconductor substrate and its production method |
| 04/28/2011 | US20110097876 Chemical vapor deposition reactor having multiple inlets |
| 04/28/2011 | US20110095291 Lateral Growth Semiconductor Method and Devices |
| 04/28/2011 | US20110094668 Substrate with determinate thermal expansion coefficient |
| 04/28/2011 | US20110094438 Laminated body and the method for production thereof |
| 04/27/2011 | EP2313543A2 Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe) |
| 04/27/2011 | CN102037165A Method for producing nanostructures on metal oxide substrate, and thin film device |
| 04/27/2011 | CN102031561A Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
| 04/27/2011 | CN102031560A Method for preparing large-size GaN self-support substrate |
| 04/27/2011 | CN102031498A Substrate support seat for III-V group thin film growth reaction chamber, reaction chamber thereof and process treatment method |
| 04/27/2011 | CN101445960B Method for preparing adulteration monocrystalline zinc oxide nanometer brush by vapour deposition and device thereof |
| 04/27/2011 | CN101063233B Equipment for growth of horizontal chromium doped semi-insulation gallium arsenide |
| 04/26/2011 | US7932107 Method for growing nitride semiconductor |
| 04/26/2011 | US7931748 Systems and methods for the production of highly tetrahedral amorphous carbon coatings |
| 04/21/2011 | WO2011047182A1 High growth rate deposition for group iii/v materials |
| 04/21/2011 | WO2010101715A9 Gas injectors for cvd systems with the same |
| 04/21/2011 | US20110089433 Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal sic substrate and single crystal sic substrate |
| 04/21/2011 | US20110089431 Compound single crystal and method for producing the same |
| 04/21/2011 | CA2777544A1 High growth rate deposition for group iii/v materials |
| 04/20/2011 | EP2312616A1 Film deposition method |
| 04/20/2011 | EP2312023A2 Compound single crystal and method for producing the same |
| 04/20/2011 | EP2311076A2 Rapid thermal processing chamber with shower head |
| 04/20/2011 | EP2310553A1 Atomic layer deposition apparatus and loading methods |
| 04/20/2011 | EP1957689B1 High crystalline quality synthetic diamond |
| 04/20/2011 | CN201801636U Novel silicon chip production extension equipment and system comprising same |
| 04/20/2011 | CN1777696B Methods and apparatus for atomic layer deposition |
| 04/20/2011 | CN102021649A Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas |
| 04/19/2011 | US7927571 Method and device for producing high purity polycrystalline silicon with a reduced dopant content |
| 04/14/2011 | WO2011044412A1 Multi-rotation epitaxial growth apparatus and reactors incorporating same |
| 04/14/2011 | US20110083602 Multi-Rotation Epitaxial Growth Apparatus and Reactors Incorporating Same |
| 04/14/2011 | US20110083601 High growth rate deposition for group iii/v materials |
| 04/13/2011 | CN102016118A Apparatus and methods for deposition reactors |
| 04/13/2011 | CN102011182A Method for manufacturing lattice graded buffer layer |
| 04/13/2011 | CN102011103A Chemisorption method for preparing carbon nitride film |
| 04/12/2011 | US7922821 Source, an arrangement for installing a source, and a method for installing and removing a source |
| 04/07/2011 | WO2011041765A1 High temperature superconducting materials and methods for modifying and creating same |
| 04/07/2011 | US20110079793 Semiconductor substrate and its manufacturing method |
| 04/06/2011 | EP2305859A1 III-V Nitride substrate boule and method of making and using the same |
| 04/05/2011 | US7919831 Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 04/05/2011 | US7918937 Method of producing silicon carbide epitaxial layer |
| 03/31/2011 | WO2011016828A3 Large area deposition of graphene hetero-epitaxial growth, and products including the same |
| 03/31/2011 | US20110073874 Method of reducing memory effects in semiconductor epitaxy |
| 03/31/2011 | US20110073184 Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby |
| 03/31/2011 | DE102009055667A1 Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide |
| 03/31/2011 | DE102009042349A1 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente Semi-polar wurtzite-type group III nitride based semiconductor layers that form the basis semiconductor devices |
| 03/30/2011 | EP2302110A1 Method of manufacturing a si(1-v-w-x)cwalxnv substrate, method of manufacturing an epitaxial wafer, si(1-v-w-x)cwalxnv substrate, and epitaxial wafer |
| 03/30/2011 | EP2302108A1 Nanostructures and methods for manufacturing the same |
| 03/30/2011 | EP2300643A1 Diamond material |
| 03/30/2011 | EP1784529B1 Manufacture of cadmium mercury telluride on patterned silicon |
| 03/30/2011 | EP1745165B1 Method for producing virtual ge substrates for iii/v-integration on si(001) |
| 03/30/2011 | CN101509145B Method for growing nonpolar a face GaN film on lithium aluminate substrate |
| 03/29/2011 | US7915698 Nitride semiconductor substrate having a base substrate with parallel trenches |
| 03/29/2011 | US7915152 III-V nitride substrate boule and method of making and using the same |
| 03/29/2011 | US7915151 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 03/24/2011 | US20110067625 Crystal growth method and apparatus |
| 03/23/2011 | EP2298968A2 Method for growing nanowires |
| 03/23/2011 | EP2297383A1 Microwave-assisted synthesis of carbon and carbon-metal composites from lignin, tannin and asphalt derivatives |
| 03/23/2011 | EP2021532B1 Source container of a vpe reactor |
| 03/23/2011 | EP1533402B1 Epitaxial wafer and its manufacturing method |
| 03/23/2011 | CN201770800U Bearing platform for production of epitaxial wafers |
| 03/23/2011 | CN101368289B Deposition boiler tube |
| 03/23/2011 | CN101290877B Preparing method of polycrystalline silicon thin film |
| 03/23/2011 | CN101192520B Semiconductor device and manufacture method thereof |
| 03/23/2011 | CN101008080B Film-forming device |
| 03/22/2011 | US7911035 Directionally controlled growth of nanowhiskers |
| 03/22/2011 | US7911009 Nanosensors |
| 03/22/2011 | US7910765 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride |
| 03/22/2011 | US7910462 Growing [110] silicon on [001] oriented substrate with rare-earth oxide buffer film |
| 03/22/2011 | US7910083 Coloured diamond |
| 03/22/2011 | CA2469789C Coloured diamond |
| 03/17/2011 | US20110064103 Semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface |
| 03/16/2011 | EP2296169A1 Method for manufacturing nitrogen compound semiconductor substrate, nitrogen compound semiconductor substrate, method for manufacturing single crystal sic substrate, and single crystal sic substrate |
| 03/16/2011 | EP2294608A2 Modular and readily configurable reactor enclosures and associated function modules |
| 03/16/2011 | EP2294245A1 Arrangement in connection with ald reactor |
| 03/16/2011 | EP2294005A2 Skull reactor |
| 03/16/2011 | CN101985774A Method for synthesizing single crystal nano wire array |
| 03/16/2011 | CN101985744A Method for preparing monocrystalline cubic carbon nitride thin film |
| 03/16/2011 | CN101498036B Controllable pressure pen ejecting apparatus possessing automatic alarming function for epitaxial production |
| 03/15/2011 | US7906411 Deposition technique for producing high quality compound semiconductor materials |
| 03/10/2011 | WO2011027580A1 Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device, and method for manufacturing same |
| 03/10/2011 | US20110057197 GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF |
| 03/10/2011 | US20110056429 Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
| 03/09/2011 | EP2291552A2 Direct silicon or reactive metal casting |
| 03/09/2011 | EP1651802B1 Support system for treatment apparatuses |
| 03/08/2011 | US7902546 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
| 03/03/2011 | WO2011025715A1 Doped transparent conductive oxide |
| 03/03/2011 | WO2011024854A1 Silicon carbide epitaxial wafer and manufacturing method therefor |