C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
11/2011
11/22/2011	US8062422 Method and apparatus for generating a precursor for a semiconductor processing system
11/17/2011	WO2011142717A1 Gas-phase synthesis of wires
11/17/2011	WO2011142470A1 Epitaxial silicon carbide single-crystal substrate and method for producing the same
11/17/2011	WO2011142402A1 Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal
11/17/2011	US20110281424 Relaxed InGaN/AlGaN Templates
11/17/2011	US20110280790 Production of Large, High Purity Single Crystal CVD Diamond
11/17/2011	US20110278596 Epitaxial silicon carbide monocrystalline substrate and method of production of same
11/17/2011	US20110278585 Growth of reduced dislocation density non-polar gallium nitride
11/17/2011	DE10109507B4 Halbleiterherstellungsverfahren Semiconductor manufacturing processes
11/16/2011	CN202039158U CVD graphite tray structure used for growing of semiconductor epitaxial wafer
11/16/2011	CN202039157U Bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device
11/16/2011	CN102242351A Nozzle and device for manufacturing semiconductor substrate having the nozzle
11/15/2011	US8057599 Substrate processing apparatus and method for manufacturing a semiconductor device
11/10/2011	WO2011138315A1 Storage magazine of a cvd plant
11/09/2011	EP2385159A1 Method for producing sic epitaxial substrate
11/09/2011	CN102239282A Microwave-assisted synthesis of carbon and carbon-metal composites from lignin, tannin and asphalt derivatives
11/09/2011	CN102234793A Carbon component and method for manufacturing the same
11/09/2011	CN102234792A Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor
11/09/2011	CN101764054B Compound semiconductor epi-wafer and preparation method thereof
11/09/2011	CN101591811B Method for preparing III-V compound semiconductor nanotube structure material by GSMBE
11/09/2011	CN101560694B Controllable preparation method for silicideb nanometer belts/nanometer sheets
11/09/2011	CN101525766B Method for preparing magnetic nano-particle periodically-packed boron-nitride bamboo-like nano-tubes
11/03/2011	US20110265708 Method of heteroepitaxy
11/02/2011	CN102230216A Preparation method of laminar plasma of single crystal diamond
10/2011
10/27/2011	US20110262773 Ammonothermal Method for Growth of Bulk Gallium Nitride
10/27/2011	US20110262702 Single crystalline metal nanoplate and the fabrication method thereof
10/27/2011	US20110259270 Carbon component and method for manufacturing the same
10/27/2011	US20110259261 Reaction vessel for growing single crystal and method for growing single crystal
10/26/2011	EP2381487A1 Substrate for light-emitting element
10/26/2011	EP2381013A2 Carbon component and method for manufacturing the same
10/26/2011	EP1719167B1 Substrate support system for reduced autodoping and backside deposition
10/26/2011	CN102226295A Method for designing control parameters of quaternary compound molecular beam epitaxy component
10/26/2011	CN101649449B Preparation method of ZnS/ZnSe composite infrared transmission material
10/25/2011	US8043687 Structure including a graphene layer and method for forming the same
10/25/2011	US8043431 Substrate processing apparatus and method for manufacturing a semiconductor device
10/20/2011	WO2011129246A1 Single-crystal substrate, single-crystal substrate having crystalline film, crystalline film, method for producing single-crystal substrate having crystalline film, method for producing crystalline substrate, and method for producing element
10/20/2011	US20110256718 Thin films
10/20/2011	US20110254134 Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy
10/20/2011	US20110253973 Semiconductor layer
10/20/2011	US20110253034 Crystal preparing device, crystal preparing method, and crystal
10/19/2011	EP2378545A1 Iii-nitride semiconductor growth substrate, iii-nitride semiconductor epitaxial substrate, iii-nitride semiconductor element, iii-nitride semiconductor freestanding substrate, and method for fabricating these
10/19/2011	EP2376681A2 Production of single crystal cvd diamond rapid growth rate
10/19/2011	EP2376680A1 Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
10/19/2011	EP2222901B1 Epitaxial barrel susceptor producing improved thickness uniformity in an epitaxial coating
10/19/2011	CN1965111B Manufacture of cadmium mercury telluride
10/19/2011	CN102220640A Preparation method of gallium nitride single crystal
10/18/2011	US8038795 Epitaxial growth and cloning of a precursor chiral nanotube
10/13/2011	WO2011127258A1 Fabrication of large-area hexagonal boron nitride thin films
10/13/2011	WO2011126145A1 Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by the process
10/13/2011	WO2011124997A1 Substrate for epitaxial growth
10/12/2011	EP1346085B1 Method for producing group iii metal nitride based materials
10/12/2011	CN102214739A Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode)
10/12/2011	CN102212878A Method for preparing acicular and fungiform Bi2O3 nano materials
10/12/2011	CN102212877A MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof
10/06/2011	WO2011122368A1 Method for producing single crystal 3c-sic substrate and resulting single-crystal 3c-sic substrate
10/06/2011	WO2011120495A1 Domain-structured ferroic element, method and apparatus for generating and for controlling the electrical conductivity of domain walls at room temperature in the elements and applications of the element
10/06/2011	US20110244235 Growth process for gallium nitride porous nanorods
10/06/2011	US20110239931 Epitaxial silicon wafer and fabrication method thereof
10/05/2011	EP2371997A1 Method for manufacturing crystals, in particular of silicon carbide, from gaseous phase
10/05/2011	EP1337683B1 Method for automatic organisation of microstructures or nanostructures and related device obtained
10/05/2011	CN102209804A Polymer laminate substrate for formation of epitaxially grown film, and manufacturing method therefor
10/05/2011	CN102208497A Preparation method of semi-polarity or nonpolar GaN composite substrate on silicon substrate
10/05/2011	CN102208340A Method for making self-support gallium nitride substrate
10/05/2011	CN102208331A Crystal growth method and substrate manufacturing method
10/05/2011	CN102206856A Method for growing zinc oxide material by modulating temperature periodically
10/05/2011	CN101311380B Method for manufacturing semiconductor of iii-v group compounds
10/04/2011	USRE42770 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer
10/04/2011	US8029620 Methods of forming carbon-containing silicon epitaxial layers
09/2011
09/29/2011	US20110237441 Method for producing metal substrates for hts coating arrangements
09/29/2011	US20110233730 REACTIVE CODOPING OF GaAlInP COMPOUND SEMICONDUCTORS
09/29/2011	US20110232564 Method of growing gallium nitride crystal and method of manufacturing gallium nitride crystal
09/28/2011	EP2369041A1 Cdte semiconductor substrate for epitaxial growth and substrate container
09/28/2011	EP2369040A1 In situ dopant implantation and growth of a III-nitride semiconductor body
09/28/2011	CN102201550A Unit mask, mask assembly and method for manufacturing display device
09/28/2011	CN102201332A Preparation method of GaN substrate
09/28/2011	CN101525767B One-dimensional nano single-crystal tubular silicon carbide as well as preparation method
09/28/2011	CN101397693B Method for high quality single crystal indium nitride film growth
09/28/2011	CN101220244B High surface quality GaN wafer and method of fabricating same
09/27/2011	US8025729 Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
09/27/2011	CA2499530C Optical quality diamond material
09/22/2011	WO2011115950A1 Ammonothermally grown group-iii nitride crystal
09/22/2011	WO2011113605A1 Semipolar semiconductor crystal and method for producing it
09/22/2011	US20110229639 Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition
09/22/2011	DE102010011895A1 Semipolarer Halbleiterkristall und Verfahren zur Herstellung desselben Semipolar semiconductor crystal and method of manufacturing the same
09/21/2011	EP2366815A1 Polymer laminate substrate for formation of epitaxially grown film, and manufacturing method therefor
09/21/2011	EP1525340B1 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
09/21/2011	CN201981291U 一种图形化衬底的结构以及发光二极管芯片 A graphical structure of the substrate and the light emitting diode chip
09/21/2011	CN102191540A Method for growing horizontally arranged zinc oxide nanowires on non-polar sapphire substrate
09/21/2011	CN102191539A Method of growing nitride semiconductor and nitride semiconductor substrate formed using the same
09/21/2011	CN102191476A Method for preparing sulfur-doped graphene films
09/20/2011	US8021914 Manufacture of cadmium mercury telluride
09/19/2011	CA2733313A1 Graphite electrode
09/15/2011	WO2011111647A1 Method for producing nitride compound semiconductor substrate, nitride compound semiconductor substrate and self-supporting nitride compound semiconductor substrate
09/15/2011	US20110222840 Heating Configuration For Use in Thermal Processing Chambers
09/15/2011	US20110220915 Off-Axis Silicon Carbide Substrates
09/15/2011	US20110220864 Single-crystalline germanium cobalt nanowire, a germanium cobalt nanowire structure, and a fabrication method thereof
09/15/2011	DE102009056162A1 Manufacturing defectless crystalline silicon layer on substrate by chemical or physical gas phase deposition, comprises supplying less amount of nitrogen during the coating of the substrate, and supplying other element as dopant material
09/14/2011	EP2365111A2 Method of manufacturing of a nano-crystal diamond film and devices using the nano-crystal diamond film
09/14/2011	EP2364382A2 Tubular nanostructures, processes of preparing same and devices made therefrom
09/14/2011	EP1752567B1 Process for producing wafer of silicon carbide single-crystal

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