| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/19/2012 | US20120012047 Method of temperature determination for deposition reactors |
| 01/19/2012 | DE102010027411A1 Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge A semiconductor device, substrate and method of manufacturing a semiconductor layer sequence, |
| 01/18/2012 | EP2406411A1 Mocvd reactor having cylindrical gas inlet element |
| 01/18/2012 | CN102325921A Mocvd reactor having cylindrical gas inlet element |
| 01/18/2012 | CN102324406A Epitaxial wafer substrate capable of reducing auto-doping during epitaxy, epitaxial wafer and semiconductor device |
| 01/18/2012 | CN102321919A Method for preparing monocrystal cuboid carbon nitride film |
| 01/18/2012 | CN102321915A Preparation method of Mn-doped AlN monocrystalline nano-rod |
| 01/17/2012 | US8097524 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 01/12/2012 | WO2012003715A1 Mocvd system having multiple epitaxial reactor chambers and operation method thereof |
| 01/12/2012 | US20120006268 Substrate processing apparatus and method for manufacturing a semiconductor device |
| 01/11/2012 | EP2403975A1 Gas injectors for cvd systems with the same |
| 01/11/2012 | CN202107793U Adjustable pressure synthesis container |
| 01/11/2012 | CN102317502A Gas deposition reactor |
| 01/11/2012 | CN101809710B Method of manufacturing a structure comprising a substrate and a layer deposited on one of its faces |
| 01/10/2012 | US8093628 Fluidic nanotubes and devices |
| 01/10/2012 | US8092604 Solid organometallic compound-filled container and filling method thereof |
| 01/10/2012 | US8092597 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| 01/10/2012 | US8092596 Bulk GaN and AlGaN single crystals |
| 01/05/2012 | WO2012002994A1 Selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing materials |
| 01/05/2012 | WO2012002545A1 Device for producing aluminum nitride crystal grains, method for producing aluminum nitride crystal grains, and aluminum nitride crystal grains |
| 01/05/2012 | WO2012001681A2 Methods and system for providing and analyzing local targeted advertising campaigns |
| 01/05/2012 | US20120000415 Large Area Nitride Crystal and Method for Making It |
| 01/04/2012 | EP2401768A2 Tiled substrates for deposition and epitaxial lift off processes |
| 01/04/2012 | CN102304763A Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device |
| 01/04/2012 | CN102304760A Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy |
| 01/04/2012 | CN102304698A Device for growing silicon carbide crystal by high-temperature chemical vapor deposition (HTCVD) method |
| 01/04/2012 | CN101383279B HVPE reactor for preparing nitride semiconductor substrate |
| 01/03/2012 | US8089097 Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
| 01/03/2012 | US8088225 Substrate support system for reduced autodoping and backside deposition |
| 12/29/2011 | WO2011161975A1 Epitaxial growth substrate, semiconductor device, and epitaxial growth method |
| 12/29/2011 | US20110315962 Nanosensors |
| 12/29/2011 | US20110315074 Single-crystal diamond growth base material and method for manufacturing single-crystal diamond substrate |
| 12/28/2011 | EP2400532A2 Diamond semiconductor element and process for producing the same |
| 12/28/2011 | EP2400531A2 Diamond semiconductor element and process for producing the same |
| 12/28/2011 | EP2400530A2 Diamond semiconductor element and process for producing the same |
| 12/28/2011 | EP2400046A1 Method and apparatus for growing submicron group III nitride structures utilizing HVPE techniques |
| 12/28/2011 | CN202090100U 一种行星式外延生长设备中的托盘装置 One kind of planetary epitaxial growth apparatus tray means |
| 12/28/2011 | CN102301043A 外延碳化硅单晶基板及其制造方法 An epitaxial silicon carbide single crystal substrate and manufacturing method |
| 12/28/2011 | CN102296362A Single-crystal diamond growth base material and method for manufacturing single-crystal diamond substrate |
| 12/28/2011 | CN102296361A 一种单晶石墨烯的制备方法 Method for preparing a single crystal of graphene |
| 12/28/2011 | CN101235537B 制备ZnMgO合金薄膜的方法 ZnMgO alloy thin films prepared |
| 12/22/2011 | WO2011157429A1 Method for producing diamond layers and diamonds produced by the method |
| 12/22/2011 | US20110312164 Forming an electrode having reduced corrosion and water decomposition on surface using a custom oxide layer |
| 12/22/2011 | US20110309306 Fabrication of Silicon Nanowires |
| 12/22/2011 | US20110308615 Crystal silicon processes and products |
| 12/22/2011 | DE102010023952A1 Verfahren zum Herstellen von Diamantschichten und mit dem Verfahren hergestellte Diamanten Method for producing diamond layers and diamond produced by the process |
| 12/22/2011 | DE102008023054B4 Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe A process for producing an epitaxially coated semiconductor wafer, |
| 12/21/2011 | EP2396453A1 Gas deposition reactor |
| 12/21/2011 | EP2396450A1 A chemical vapour deposition system and process |
| 12/21/2011 | EP1502303B1 High voltage switching devices and process for forming same |
| 12/21/2011 | CN102286777A 氢化物气相外延生长GaN单晶用的H<sub>3</sub>PO<sub>4</sub>腐蚀籽晶及其制备方法 Hydride vapor phase epitaxial growth of GaN single crystals with H <sub> 3 </ sub> PO <sub> 4 </ sub> Corrosion seed and its preparation method |
| 12/21/2011 | CN101724895B 一种多晶硅的生产工艺 Production process for polysilicon |
| 12/21/2011 | CN101432470B 制备粒状多晶硅的方法和装置 Methods and apparatus for preparing granular polycrystalline silicon |
| 12/15/2011 | WO2011155341A1 Freestanding gan crystal substrate and manufacturing method for same |
| 12/15/2011 | WO2011155010A1 Method of producing template for epitaxial growth and nitride semiconductor device |
| 12/15/2011 | WO2011106580A3 Carbon-based containment system |
| 12/15/2011 | US20110306179 MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates |
| 12/14/2011 | EP2395133A1 Epitaxial silicon carbide single crystal substrate and mehtod for producing same |
| 12/14/2011 | CN1763049B 三甲基镓的制造方法以及氮化镓薄膜的制造方法 Method for producing trimethyl gallium and the gallium nitride thin film manufacturing method of |
| 12/14/2011 | CN102282298A 具有吸气剂的多晶Ⅲ族金属氮化物及其制造方法 Polycrystalline Ⅲ metal nitride having a getter and a manufacturing method |
| 12/14/2011 | CN102277561A 用于多个基板的气体处理的系统和方法 Gas treatment system and method for a plurality of substrates |
| 12/14/2011 | CN101809769B 化合物半导体外延晶片及其制造方法 Compound semiconductor epitaxial wafer and its manufacturing method |
| 12/14/2011 | CN101760778B 一种半导体材料棒材的制造方法 Method of producing a semiconductor material rod |
| 12/14/2011 | CN101550590B 多层外延层的生长设备以及生长方法 The growth equipment and a method of growing an epitaxial layer of a multilayer |
| 12/08/2011 | WO2011152799A1 Method of forming epitaxial zinc oxide films |
| 12/08/2011 | US20110300323 Production method for a bulk sic single crystal with a large facet and monocrystalline sic substrate with homogeneous resistance distribution |
| 12/08/2011 | US20110300058 Method of graphene manufacturing |
| 12/08/2011 | US20110297076 Apparatus and method for batch non-contact material characterization |
| 12/07/2011 | EP2392547A2 Method of graphene manufacturing |
| 12/07/2011 | CN1992168B 第iii族氮化物晶体物质的制造方法和制造装置 Manufacturing method and apparatus iii nitride crystal substance |
| 12/07/2011 | CN102268737A 生成iii-n层的方法，和iii-n层或iii-n衬底，以及其上的器件 The method of generating iii-n layer, and the device iii-n layer or iii-n substrate, and on which |
| 12/07/2011 | CN102268736A 一种碳化硅纳米线阵列的气相层间扩散反应工艺制备方法 Reaction process for the preparation of an inter-SiC nanowire arrays vapor diffusion layer |
| 12/07/2011 | CN101680092B 用于cvd反应器中的基板的表面温度的温度控制的装置 Means for the surface temperature cvd reactor temperature control of the substrate |
| 12/07/2011 | CN101654806B 大尺寸氧化锌晶须的生产方法 Large zinc oxide whisker production methods |
| 12/07/2011 | CN101578744B 使用经蚀刻的刻面技术生产的基于AlGaInN的激光器 Use the etched facet technology to produce laser-based AlGaInN |
| 12/01/2011 | US20110290176 Cluster tool for epitaxial film formation |
| 12/01/2011 | US20110290175 Multi-Chamber CVD Processing System |
| 12/01/2011 | US20110290174 One hundred millimeter single crystal silicon carbide wafer |
| 12/01/2011 | DE102010022069A1 Verfahren zur Züchtung von II-VI-Halbleiterkristallen und II-VI-Halbleiterschichten A process for the production of II-VI semiconductor crystals and II-VI semiconductor layers |
| 12/01/2011 | DE102010017082A1 Vorrichtung und Verfahren zum Be- und Entladen, insbesondere einer Beschichtungseinrichtung Apparatus and method for loading and unloading, in particular a coating device |
| 11/30/2011 | EP1920080B1 High colour diamond |
| 11/30/2011 | CN202054924U 一种用于等温气相外延工艺的晶体生长容器 A crystal temperature process for the vapor phase epitaxy growth vessel or the like |
| 11/30/2011 | CN1865534B 单晶金刚石及其制备方法 Single crystal diamond and its preparation method |
| 11/30/2011 | CN102260908A 一种生长纳米晶硅粉体的装置 Means a growing body of nanocrystalline silicon powder |
| 11/30/2011 | CN102260907A 一种ZnO纳米同质pn结阵列的制备方法 Method for preparing homogeneous nano-ZnO pn junction arrays |
| 11/30/2011 | CN101748480B Si衬底上生长ZnO外延薄膜的方法 Epitaxial growth of ZnO thin films on Si substrates |
| 11/29/2011 | US8067300 AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same |
| 11/29/2011 | US8067297 Process for deposition of semiconductor films |
| 11/29/2011 | CA2511670C Tunable cvd diamond structures |
| 11/24/2011 | WO2009086257A3 Susceptor with support bosses |
| 11/24/2011 | US20110284872 Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor device |
| 11/24/2011 | US20110283933 METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF SiC AND RELATED OR SIMILAR MATERIAL, BY CHEMICAL VAPOR DEPOSITION, USING PRECURSORS IN MODIFIED COLD-WALL REACTOR |
| 11/24/2011 | DE102010021144A1 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 11/24/2011 | DE102007017592B4 Verfahren zur Regelung eines Epitaxieaufwachsverfahrens in einem Epitaxiereaktor, Regler und Datenanlysemodul für Epitaxieaufwachsverfahren Method for controlling a Epitaxieaufwachsverfahrens in an epitaxy reactor, regulators and Datenanlysemodul for Epitaxieaufwachsverfahren |
| 11/23/2011 | EP2388802A1 Inside reforming substrate for epitaxial growth; crystal film forming element, device, and bulk substrate produced using the same; and method for producing the same |
| 11/23/2011 | EP1468128B1 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material |
| 11/23/2011 | CN102257190A Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device |
| 11/23/2011 | CN102257189A Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof |
| 11/23/2011 | CN102251277A Zinc oxide transparent conductive film and production method thereof |
| 11/23/2011 | CN101736399B Method for preparing tin oxide single crystal film with orthogonal structure |