| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 01/13/1988 | EP0252755A1 Chemical vapour deposition |
| 01/13/1988 | EP0252536A1 Fabrication method of optical strip transmission line for non-reciprocal optical components |
| 01/13/1988 | EP0252347A2 Process for the deposition of gallium arsenide layers |
| 01/07/1988 | EP0251825A1 Gas treatment apparatus and method |
| 01/07/1988 | EP0251522A2 Process for production of beta-type silicon nitride |
| 01/05/1988 | US4717693 Vapor deposition |
| 01/05/1988 | US4717630 Substrate for manufacturing single crystal thin films |
| 12/29/1987 | US4716130 Vapor deposition of an organoindium and phorphorus compound in presence of ferrocene or iron pentacarbonyl based dopant |
| 12/22/1987 | US4714594 Unidirectional gas flow |
| 12/02/1987 | EP0247680A1 Process for producing a semiconductor device including the vapour phase deposition of layers on a substrate |
| 12/01/1987 | US4710428 Sintered silicon carbide porous body impregnated with metallic silicon |
| 11/25/1987 | EP0246785A1 Reagent source |
| 11/25/1987 | EP0246266A1 A manifold assembly. |
| 11/19/1987 | EP0245600A2 Process for the plasma synthesis of hydride compounds and apparatus for carrying out said process |
| 11/17/1987 | US4707384 Method for making a composite body coated with one or more layers of inorganic materials including CVD diamond |
| 11/10/1987 | US4705700 Chemical vapor deposition method for the thin film of semiconductor |
| 11/10/1987 | US4704988 Process and apparatus for obtaining a gaseous stream containing a compound in the vapor state, more particularly usable for introducing this compound into an epitaxy reactor |
| 11/04/1987 | EP0244081A1 Method for forming crystal and crystal article obtained by said method |
| 10/28/1987 | EP0243074A2 Process for forming deposited film |
| 10/28/1987 | EP0242898A1 Apparatus comprising a plane susceptor rotating in parallel to a reference plane and arround an axis perpendicular to this plane |
| 10/27/1987 | US4702936 Reacting silane with oxygen-containing gas to form silicon oxide, nitride or oxynitride film |
| 10/27/1987 | US4702901 Process for growing silicon carbide whiskers by undercooling |
| 10/27/1987 | US4702791 Vapor phase reaction of bismuth, or alkylated bismuth with metal compound |
| 10/22/1987 | WO1987006275A1 Method for depositing materials containing tellurium |
| 10/21/1987 | EP0242207A2 Process for forming deposited film |
| 10/15/1987 | DE3611849A1 Process and device for producing semiconductor layers by metal-organic gas-phase epitaxy |
| 10/14/1987 | EP0241316A2 Method for forming crystalline deposited film |
| 10/14/1987 | EP0241204A2 Method for forming crystalline deposited film |
| 10/14/1987 | EP0240844A1 Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials |
| 10/14/1987 | EP0138965B1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers |
| 10/13/1987 | US4699688 Vapor deposition of arsine with triethylgallium |
| 10/13/1987 | US4699675 Vapor phase growth of III-V materials |
| 10/13/1987 | US4699085 For growth on a semiconductor wafer |
| 10/13/1987 | US4699084 Apparatus for producing high quality epitaxially grown semiconductors |
| 10/07/1987 | EP0240309A2 Method for forming crystal and crystal article obtained by said method |
| 10/07/1987 | EP0240305A2 Method for forming a deposited film |
| 09/30/1987 | EP0239260A2 Grading orientation errors in crystal specimens |
| 09/30/1987 | EP0239140A2 Process for producing structured epitaxial films on a substrate |
| 09/30/1987 | EP0238830A1 Epitaxial growth method and apparatus therefor |
| 09/24/1987 | WO1987005700A1 Method and apparatus for monitoring surface layer growth |
| 09/17/1987 | DE3608783A1 Gas-phase epitaxial method and apparatus for carrying it out |
| 09/10/1987 | DE3706818A1 Process for producing a decorative material |
| 09/09/1987 | EP0235570A1 Susceptor |
| 09/01/1987 | US4690811 Process for preparing silicon carbide whiskers |
| 08/26/1987 | EP0233584A1 Susceptor for vapor-growth deposition |
| 08/12/1987 | EP0231544A1 Reactor chamber for epitaxial growth in the gaseous phase of semiconductor materials |
| 08/05/1987 | EP0230927A2 Diamond manufacturing |
| 07/21/1987 | US4681773 Apparatus for simultaneous molecular beam deposition on a plurality of substrates |
| 07/15/1987 | CN86100027A Mixed source two sided silicon monocrystalline growth on insulating substrate |
| 07/14/1987 | US4680447 Cooled optical window for semiconductor wafer heating |
| 07/08/1987 | EP0227692A1 Thin layer consisting essentially of ruthenium salt. |
| 07/01/1987 | EP0226980A2 Process for production of fibrous carbon material |
| 06/30/1987 | US4676967 High purity silane and silicon production |
| 06/16/1987 | US4673799 Fluidized bed heater for semiconductor processing |
| 06/10/1987 | EP0225111A2 Wafer boat manufacture and product |
| 06/09/1987 | US4671944 Protective flow of injected inert gas; for high temperature processing |
| 06/04/1987 | WO1987003307A1 Process for synthesizing diamond |
| 06/02/1987 | US4670241 P4 gas generator using the alkali metal polyphosphide MP15 |
| 05/27/1987 | EP0223629A1 Method and apparatus for the chemical vapour deposition of uniform thin films on many flat substrates |
| 05/27/1987 | EP0222908A1 Wafer base for silicon carbide semiconductor device |
| 05/26/1987 | US4668480 Crucibles, vacuum housings |
| 05/20/1987 | EP0221906A1 $i(IN-SITU) CVD CHAMBER CLEANER |
| 05/19/1987 | US4667076 Method and apparatus for microwave heat-treatment of a semiconductor water |
| 05/13/1987 | EP0221454A1 Method of producing wafers |
| 05/12/1987 | US4664743 Growth of semi-conductors and apparatus for use therein |
| 05/07/1987 | WO1987002750A1 A manifold assembly |
| 05/05/1987 | US4662981 Method and apparatus for forming crystalline films of compounds |
| 04/29/1987 | CN86107119A Method of producing wafer |
| 04/28/1987 | US4661199 Providing thick film of silicon on susceptor to serve as seal to prevent diffusion of dopants |
| 04/28/1987 | CA1221007A1 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers |
| 04/21/1987 | US4659591 Method of coating tungsten preferentially orientated in the <111> direction on a substrate |
| 04/21/1987 | US4659507 Silicon fiber and method of making the same |
| 04/21/1987 | US4659401 Multilayer |
| 04/21/1987 | CA1220768A1 Bubbler cylinder and dip tube device |
| 04/14/1987 | US4657616 In-situ CVD chamber cleaner |
| 04/14/1987 | US4657603 Multilayer-substrate, doped amorphous germanium, then gallium arsenide |
| 04/07/1987 | US4655848 Mercury cadmium telluride intermetallic |
| 04/07/1987 | US4655800 Adsorption of chlorine containing gases |
| 04/01/1987 | EP0215859A1 Process for the manufacture of a p-conducting epitaxy layer from a iii/v semi-conductor |
| 03/31/1987 | US4654509 Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
| 03/24/1987 | US4652436 Preparation of nitride and carbide from inorganic-organic polymer complex |
| 03/24/1987 | US4651673 For depositing reactants on the surface of a semiconductor wafer |
| 03/18/1987 | EP0214690A2 A method of manufacturing a semiconductor device |
| 03/17/1987 | US4650539 Manufacture of cadmium mercury telluride |
| 03/17/1987 | US4649859 Reactor design for uniform chemical vapor deposition-grown films without substrate rotation |
| 03/10/1987 | US4649227 Photoactive pyrite layer and process for making and using same |
| 03/05/1987 | DE3530999A1 Process for fabricating semiconductor arrangements |
| 03/04/1987 | EP0212910A2 Method and apparatus for the chemical vapour deposition of III-V semiconductors utilizing organometallic and elemental pnictide sources |
| 02/24/1987 | US4645689 Deposition technique |
| 02/17/1987 | US4643890 Perforated reactor tube for a fluid wall reactor and method of forming a fluid wall |
| 02/17/1987 | CA1217936A1 Apparatus for providing depletion-free uniform thickness cvd thin-film on semiconductor wafers |
| 02/12/1987 | WO1987000965A1 Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources |
| 02/10/1987 | US4641603 Epitaxial growing apparatus |
| 02/04/1987 | EP0210569A2 Barrel structure for semiconductor epitaxial reactor |
| 02/04/1987 | EP0210476A1 Bubbler cylinder device |
| 02/03/1987 | US4640830 Vapor phase reaction of transition metal, organo-silicon, and carbon compounds |
| 01/28/1987 | EP0209648A1 Wafer base for silicon carbide semiconductor device |
| 01/28/1987 | EP0209523A1 Growth of lattice-graded epilayers |
| 01/27/1987 | US4638762 Chemical vapor deposition method and apparatus |
| 01/21/1987 | EP0209150A2 Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor |