Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2008
12/18/2008US20080311721 Semiconductor device manufacture method including process of implanting impurity into gate electrode independently from source/drain and semiconductor device manufactured by the method
12/18/2008US20080311714 Semiconductor structure and method of manufacture
12/18/2008US20080311685 Methods relating to the reconstruction of semiconductor wafers for wafer level processing
12/18/2008US20080310663 Microphone package adapted to semiconductor device and manufacturing method therefor
12/18/2008US20080310480 Reception of Wideband Signals with High Temperature Superconducting Components to Reduce Co-Site Interference
12/18/2008US20080310061 Transistor with EOS protection and ESD protection circuit including the same
12/18/2008US20080309841 Active matrix substrate and display device
12/18/2008US20080309839 Thin film transistor array panel and liquid crystal display including the panel
12/18/2008US20080309585 Method of manufacturing a semiconductor device
12/18/2008US20080309332 Microchip Assembly With Short-Distance Interaction
12/18/2008US20080308920 System and method of fabricating micro cavities
12/18/2008US20080308911 Semiconductor device and manufacturing method thereof
12/18/2008US20080308909 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers
12/18/2008US20080308908 Nitride semiconductor device and method for producing nitride semiconductor device
12/18/2008US20080308907 PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
12/18/2008US20080308906 GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE
12/18/2008US20080308905 Semi-conductor device, and method of making the same
12/18/2008US20080308904 P-doped region with improved abruptness
12/18/2008US20080308902 Semiconductor device
12/18/2008US20080308901 Integrated circuit having a thin passivation layer that facilitates laser programming, and applications thereof
12/18/2008US20080308900 Electrical fuse with sublithographic dimension
12/18/2008US20080308899 Triangular space element for semiconductor device
12/18/2008US20080308896 Integrated circuit device comprising a gate electrode structure and corresponding method of fabrication
12/18/2008US20080308895 Semiconductor device
12/18/2008US20080308887 Semiconductor memory device
12/18/2008US20080308886 Semiconductor Sensor
12/18/2008US20080308885 Magnetic random access memory and fabricating method thereof
12/18/2008US20080308884 Fabrication of Inlet and Outlet Connections for Microfluidic Chips
12/18/2008US20080308882 Application of gate edge liner to maintain gate length cd in a replacement gate transistor flow
12/18/2008US20080308881 Method for Controlled Formation of a Gate Dielectric Stack
12/18/2008US20080308879 Mos structures with contact projections for lower contact resistance and methods for fabricating the same
12/18/2008US20080308874 Complementary Asymmetric High Voltage Devices and Method of Fabrication
12/18/2008US20080308873 Semiconductor device with discontinuous CESL structure
12/18/2008US20080308871 Semiconductor device and method for producing the same
12/18/2008US20080308870 Integrated circuit with a split function gate
12/18/2008US20080308869 Semiconductor device which has mos structure and method of manufacturing the same
12/18/2008US20080308867 Partially depleted soi field effect transistor having a metallized source side halo region
12/18/2008US20080308865 Semiconductor device and method for manufacturing the same
12/18/2008US20080308864 Asymmetrical mos transistor and fabrication method thereof and devices using the same
12/18/2008US20080308863 Semiconductor device and method of manufacturing the same
12/18/2008US20080308862 Mos Transistor and Method of Manufacturing a Mos Transistor
12/18/2008US20080308861 Dual gate finfet
12/18/2008US20080308858 Semiconductor devices and electronic systems comprising floating gate transistors and methods of forming the same
12/18/2008US20080308857 Systems and Methods for Self Convergence During Erase of a Non-Volatile Memory Device
12/18/2008US20080308856 Integrated Circuit Having a Fin Structure
12/18/2008US20080308855 Memory devices with isolation structures and methods of forming and programming the same
12/18/2008US20080308853 Tunnel transistor having spin-dependent transfer characteristics and non-volatile memory using the same
12/18/2008US20080308850 Transistor with reduced charge carrier mobility and associated methods
12/18/2008US20080308849 Semiconductor apparatus and complimentary mis logic circuit
12/18/2008US20080308845 Heterogeneous Group IV Semiconductor Substrates
12/18/2008US20080308844 Spin Transistor Using Perpendicular Magnetization
12/18/2008US20080308843 Field effect transistor having a compositionally graded layer
12/18/2008US20080308842 Forming silicides with reduced tailing on silicon germanium and silicon
12/18/2008US20080308841 Semiconductor Substrate, Semiconductor Device and Method of Manufacturing a Semiconductor Substrate
12/18/2008US20080308839 Insulated gate bipolar transistor
12/18/2008US20080308838 Power switching transistors
12/18/2008US20080308837 Vertical current controlled silicon on insulator (soi) device such as a silicon controlled rectifier and method of forming vertical soi current controlled devices
12/18/2008US20080308830 Semiconductor device and manufacturing method therefor
12/18/2008US20080308826 Thin-film transistor, array substrate having the thin-film transistor and method of manufacturing the array substrate
12/18/2008US20080308815 GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method
12/18/2008US20080308814 Gallium nitride substrate and gallium nitride layer formation method
12/18/2008US20080308813 High breakdown enhancement mode gallium nitride based high electron mobility transistors with integrated slant field plate
12/18/2008US20080308812 Ga-Containing Nitride Semiconductor Single Crystal, Production Method Thereof, and Substrate and Device Using the Crystal
12/18/2008US20080308811 Display device
12/18/2008US20080308810 Semiconductor device and method for manufacturing the same
12/18/2008US20080308809 Thin film transistor, method of fabricating the thin film transistor, and display device including the thin film transistor
12/18/2008US20080308808 Thin film transistor array substrate and method for fabricating same
12/18/2008US20080308807 Display device and manufacturing method thereof
12/18/2008US20080308806 Semiconductor Device and Manufacturing Method Thereof
12/18/2008US20080308805 Semiconductor Device and Manufacturing Method Thereof
12/18/2008US20080308804 Semiconductor Device and Manufacturing Method Thereof
12/18/2008US20080308803 Thin film transistor and display panel having the same
12/18/2008US20080308802 Capacitor-Less Memory
12/18/2008US20080308797 Semiconductor Device and Manufacturing Method Thereof
12/18/2008US20080308796 Semiconductor Device and Manufacturing Method Thereof
12/18/2008US20080308795 Thin film transistor array panel and manufacturing method thereof
12/18/2008US20080308790 Organic Siloxane Film, Semiconductor Device Using the Same, Flat Panel Display Device, and Raw Material Liquid
12/18/2008US20080308789 Field Effect Transistor and Method of Producing the Same
12/18/2008US20080308788 Quantum dot semiconductor device
12/18/2008US20080308786 Manufacturing Method for the Integration of Nanostructures Into Microchips
12/18/2008US20080308783 Memory devices and methods of manufacturing the same
12/18/2008US20080308781 Structure and process for a resistive memory cell with separately patterned electrodes
12/18/2008DE202004021554U1 Anordnung zum Ausbilden eines Trench-MOSFETs mit Selbstausrichtungsmerkmalen Arrangement for forming a trench MOSFET with self-alignment features
12/18/2008DE19706076B4 Beobachtungsgerät, das Streulicht verwendet Monitoring device that uses light scattering
12/18/2008DE112004002640B4 Verfahren zur Herstellung eines Stegfeldeffekttransistors, insb. eines Damaszener-Tri-Gate-FinFETs A process for the preparation of a fin field-effect transistor, esp. A damascene tri-gate FinFETs
12/18/2008DE10353772B4 Verfahren zur Herstellung von Transistorstrukturen mit LDD A process for producing structures with transistor LDD
12/18/2008DE102008028519A1 Integrierter Schaltkreis mit Feldeffekttransistor mit bezüglich der Austrittsarbeit mehrteiliger Gateelektrode An integrated circuit comprising field effect transistor with respect to the work function of multi-part gate electrode
12/18/2008DE102008024827A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
12/18/2008DE102008001209A1 Halbleiterbauelemente und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation
12/18/2008DE102007027626A1 Semiconductor element e.g. metaloxide semiconductor field effect transistor, comprises a crystalline semiconductor body with a drift stretch structure having a vertically directed trench structure filled up with semiconductor material
12/18/2008DE102006062011B4 Feldeffekttransistor und ein Verfahren zur Herstellung eines Feldeffekttransistors Field effect transistor and a method of manufacturing a field effect transistor
12/18/2008DE102006059427B4 Verfahren zum Ausbilden einer komprimierten Kanalschicht eines PMOS-Bauelements unter Verwendung eines Gateabstandshalters und ein durch selbiges hergestelltes PMOS-Bauelement A method of forming a compressed layer of a channel PMOS device using a gate spacer, and a polymer produced by selbiges PMOS device
12/18/2008DE102005004355B4 Halbleitereinrichtung und Verfahren zu deren Herstellung Semiconductor device and process for their preparation
12/18/2008DE102004064081B4 Gehäuse für einen optischen Empfänger Housing for an optical receiver
12/18/2008DE102004057792B4 Halbleiterbauteil Semiconductor device
12/17/2008EP2003697A2 GaAs semiconductor substrate and fabrication method thereof
12/17/2008EP2003696A1 GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate
12/17/2008EP2003694A2 Semiconductor device
12/17/2008EP2003686A2 Field effect transistor
12/17/2008EP2003678A2 Structures based on nanoparticles and method for their fabrication
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