Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2010
05/20/2010WO2010055716A1 Acceleration sensor
05/20/2010WO2010055603A1 Semiconductor device and method for manufacturing same
05/20/2010WO2010055569A1 Mosfet and method for manufacturing same
05/20/2010WO2010055102A1 P-type field-effect transistor and method of production
05/20/2010US20100124529 Method of manufacturing carbon cylindrical structures and biopolymer detection device
05/20/2010US20100124134 Semiconductor device
05/20/2010US20100124114 Semiconductor Device and Layout Method for the Semiconductor Device
05/20/2010US20100123860 Thin film transistor substrate and a fabricating method thereof
05/20/2010US20100123222 Process for fabricating a charge storage layer of a memory cell
05/20/2010US20100123218 Method of forming of a semiconductor film, method of manufacture of a semiconductor device and a semiconductor device
05/20/2010US20100123216 Semiconductor integrated circuit including a power supply, semiconductor system including a semiconductor integrated circuit, and method of forming a semiconductor integrated circuit
05/20/2010US20100123214 Metal-oxide-metal structure with improved capacitive coupling area
05/20/2010US20100123213 Metal-insulator-metal capacitors
05/20/2010US20100123211 Semiconductor device having a high aspect ratio isolation trench and method for manufacturing the same
05/20/2010US20100123210 Asymmetric barrier diode
05/20/2010US20100123207 Bottom electrode mask design for ultra-thin interlayer dielectric approach in MRAM device fabrication
05/20/2010US20100123206 Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated
05/20/2010US20100123205 Method to prevent surface decomposition of iii-v compound semiconductors
05/20/2010US20100123204 Semiconductor Device and Method for Fabricating the Same
05/20/2010US20100123203 Tunnel Field-Effect Transistor with Metal Source
05/20/2010US20100123198 Semiconductor devices and methods of manufacturing the same
05/20/2010US20100123197 Semiconductor device and method of manufacturing the same
05/20/2010US20100123196 LDMOS Transistor and Method for Manufacturing the Same
05/20/2010US20100123195 Lateral double diffused mos device and method for manufacturing the same
05/20/2010US20100123194 Semiconductor device and method for fabricating the same
05/20/2010US20100123192 Semiconductor component and method of manufacture
05/20/2010US20100123191 Semiconductor device and method of manufacturing the same
05/20/2010US20100123190 Semiconductor device and method for manufacturing the same
05/20/2010US20100123189 Semiconductor component and method of manufacture
05/20/2010US20100123188 Semiconductor device having trench shield electrode structure
05/20/2010US20100123187 Contact structure for semiconductor device having trench shield electrode and method
05/20/2010US20100123186 Power semiconductor device
05/20/2010US20100123184 Nonvolatile semiconductor memory device
05/20/2010US20100123183 Non-volatile semiconductor memory device and method of fabricating the same
05/20/2010US20100123182 Vertical type semiconductor device
05/20/2010US20100123181 Nonvolatile memory devices including multiple charge trapping layers
05/20/2010US20100123179 Two-Step Self-Aligned Source Etch With Large Process Window
05/20/2010US20100123178 High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance
05/20/2010US20100123174 Lightly-doped drains (ldd) of image sensor transistors using selective epitaxy
05/20/2010US20100123173 Semiconductor device and method of manufacturing the same
05/20/2010US20100123172 Semiconductor device and method of producing semiconductor device
05/20/2010US20100123169 Compound semiconductor substrate and device therewith
05/20/2010US20100123168 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
05/20/2010US20100123165 Semiconductor material, method of producing semiconductor material, light emitting device and light receiving device
05/20/2010US20100123140 SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTURE
05/20/2010US20100123139 Semiconductor wafer, semiconductor device, semiconductor wafer manufacturing method and semiconductor device manufacturing method
05/20/2010US20100123138 Display device and method of manufacturing the same
05/20/2010US20100123137 Array substrate and method of manufacturing the same
05/20/2010US20100123132 Thin film device and manufacturing method of the same
05/20/2010US20100123131 Thin film transistor and display device
05/20/2010US20100123130 Semiconductor device and method for manufacturing the same
05/20/2010US20100123129 ZnO-CONTAINING SEMICONDUCTOR LAYER AND DEVICE USING THE SAME
05/20/2010US20100123128 Semiconductor Devices Having Channel Layer Patterns on a Gate Insulation Layer
05/20/2010US20100123122 Select devices including an open volume, memory devices and systems including same, and methods for forming same
05/20/2010US20100123121 Thyristor Radiation Detector Array and Applications Thereof
05/20/2010US20100123120 A single-photon detector with a quantum dot and a nano-injector
05/20/2010US20100123084 Betavoltaic radiation detector
05/20/2010US20100122976 Thermistor with 3 terminals, thermistor-transistor, circuit for controlling heat of power transistor using the thermistor-transistor, and power system including the circuit
05/20/2010DE112005002350B4 Ein Verfahren zur Herstellung eines Halbleiterbauelements mit High-k-Gate-Dielektrikumschicht und Silizid-Gate-Elektrode A method of manufacturing a semiconductor device with high-k gate dielectric layer and silicide gate electrode
05/20/2010DE112004002409B4 Verfahren zum Verbessern der Transistorleistung durch Reduzieren des Salizidgrenzflächenwiderstandes und Transistor A method for improving transistor performance by reducing the transistor and Salizidgrenzflächenwiderstandes
05/20/2010DE102009044474A1 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device
05/20/2010DE102008054094A1 Semiconductor element has semiconductor body, in which semiconductor zone is formed by single cable type, where semiconductor zone has resistance structure with two sections
05/19/2010EP2187441A1 Switching device for electric circuit
05/19/2010EP2187432A1 P-type field-effect transistor and method of production
05/19/2010EP2187431A1 Semiconductor device and method for manufacturing the same
05/19/2010EP2186119A1 High-k heterostructure
05/19/2010EP1407492B1 Single-electron transistors and fabrication methods
05/19/2010EP1364400B1 Method for producing thin layers on a specific support and an application thereof
05/19/2010EP1108267B1 Methods of forming roughened layers of platinum and methods of forming capacitors containing said roughened layers of platinum
05/19/2010EP0982576B1 Sensor and method of producing the same
05/19/2010EP0738424B1 Integrated circuit passivation process
05/19/2010CN201478316U Special solar diode
05/19/2010CN201478315U Plane-welding-type power diode
05/19/2010CN201478314U High voltage rectifier
05/19/2010CN201478313U High-frequency high-linearity gallium nitride high electron mobility transistor
05/19/2010CN201478312U Insulated gate bipolar transistor
05/19/2010CN201478303U Anti-parallel double diode
05/19/2010CN201478301U Optical sensing component structure for wafer level package and wafer structure thereof
05/19/2010CN1992275B High performance circuit with metal and polygate electrodes and method for fabricating the same
05/19/2010CN1988156B Semiconductor device
05/19/2010CN1988040B Non-volatile memory and method for operating and manufacturing non-volatile memory
05/19/2010CN1953149B Semiconductor integrated circuit device and a manufacturing method for the same
05/19/2010CN101711432A Vertical led with current guiding structure
05/19/2010CN101711426A Finfet with two independent gates and method for fabricating the same
05/19/2010CN101710593A Schottky diode
05/19/2010CN101710592A Thin film transistor and method of manufacturing thin film transistor
05/19/2010CN101710591A High-voltage vertical transistor with a varied width silicon pillar
05/19/2010CN101710590A AlGaN/GaN insulated gate high electron mobility transistor (HEMT) and manufacturing method thereof
05/19/2010CN101710589A Base region structure of triode
05/19/2010CN101710588A Top gate medium for carbon-based field-effect transistors, and preparation method thereof
05/19/2010CN101710585A Hybrid crystal orientation accumulation type total surrounding grid CMOS field effect transistor
05/19/2010CN101710584A Mixed material accumulation type total surrounding grid CMOS field effect transistor
05/19/2010CN101710572A Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material
05/19/2010CN101425463B TVS diode device construction with low voltage/low leakage current and production method thereof
05/19/2010CN101341584B Method for modifying highly dielectric thin film and semiconductor device
05/19/2010CN101295730B Semiconductor device and its grid production method
05/19/2010CN101288150B Magnetic devices and techniques for formation thereof
05/19/2010CN101273255B Semiconductor pressure sensor and its fabrication method
05/19/2010CN101266999B GaN dual heterogeneity node field effect transistor structure and its making method
05/19/2010CN101258608B Semiconductor device and method of fabricating semiconductor device
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