Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2010
07/06/2010US7749842 Structures and methods for making strained MOSFETs
07/06/2010US7749838 Fabricating method of non-volatile memory cell
07/06/2010US7749836 Nonvolatile semiconductor memory and manufacturing method thereof
07/06/2010US7749823 Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof
07/06/2010US7749818 Semiconductor device and method of manufacturing the same
07/06/2010US7749816 Systems and arrangements to interconnect components of a semiconductor device
07/06/2010US7749804 Organic semiconductor device and method for manufacturing the same
07/06/2010US7749779 Landing pad for use as a contact to a conductive spacer
07/06/2010US7749777 Method of applying electrical stress to low-temperature poly-crystalline thin film transistor
07/06/2010US7749688 Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device
07/01/2010WO2010075125A1 Fabricating a gallium nitride device with a diamond layer
07/01/2010WO2010075124A1 Fabricating a gallium nitride layer with diamond layers
07/01/2010WO2010075052A1 Deep trench varactors
07/01/2010WO2010075051A1 Bias voltage generation circuit for an soi radio frequency switch
07/01/2010WO2010075002A2 Integrated shunt protection diodes for thin-film photovoltaic cells and modules
07/01/2010WO2010074964A2 Group iii-v mosfet having metal diffusion regions
07/01/2010WO2010074927A2 Stability enhancements in metal oxide semiconductor thin film transistors
07/01/2010WO2010074906A2 Group iii-v devices with delta-doped layer under channel region
07/01/2010WO2010074275A1 High electron mobility transistor, method for producing high electron mobility transistor, and electronic device
07/01/2010WO2010074132A1 Magnetic memory element and magnetic random access memory
07/01/2010WO2010074130A1 Magnetic memory element and magnetic random access memory
07/01/2010WO2010074076A1 Substrate processing method and substrate processing apparatus
07/01/2010WO2010073991A1 Semiconductor device and method for producing the same
07/01/2010WO2010073871A1 Semiconductor device, schottky barrier diode, electronic device, and method for manufacturing a semiconductor device
07/01/2010WO2010073759A1 Power semiconductor device
07/01/2010WO2010073598A1 Balance signal output type sensor
07/01/2010WO2010073455A1 Method for manufacturing silicon carbide semiconductor element
07/01/2010WO2010073434A1 Semiconductor device and method for manufacturing same
07/01/2010WO2010073425A1 Semiconductor device and method for manufacturing the same
07/01/2010WO2010073413A1 Apparatus for manufacturing spherical semiconductor
07/01/2010WO2010073023A1 An improved rf cmos transistor design
07/01/2010WO2010072590A1 Unipolar heterojunction depletion-layer transistor
07/01/2010WO2010042479A3 Enhancement-mode nitride transistor
07/01/2010WO2010039207A3 Semiconductor structure with an electric field stop layer for improved edge termination capability
07/01/2010US20100167474 Methods of Forming Semiconductor-On-Insulating (SOI) Field Effect Transistors with Body Contacts
07/01/2010US20100167463 Method for Fabricating Resistive Memory Device
07/01/2010US20100167443 Active matrix substrate, method of making the substrate, and display device
07/01/2010US20100167437 Peeling method and method for manufacturing display device using the peeling method
07/01/2010US20100165746 Semiconductor memory cell, method for manufacturing the same and method for operating the same
07/01/2010US20100165745 Non-volatile memory device and driving method thereof
07/01/2010US20100165736 Flash memory device and manufacturing method of the same
07/01/2010US20100165706 Static memory cell having independent data holding voltage
07/01/2010US20100165700 One time programmable memory device and manufacturing method of one time programmable memory device
07/01/2010US20100165581 Package for micro-electro-mechanical systems of the mems type and corresponding manufacturing process
07/01/2010US20100164671 Integrated electronic device with transceiving antenna and magnetic interconnection
07/01/2010US20100164603 Programmable fuse and anti-fuse elements and methods of changing conduction states of same
07/01/2010US20100164102 Isolated germanium nanowire on silicon fin
07/01/2010US20100164100 Bump-on-Lead Flip Chip Interconnection
07/01/2010US20100164073 Electrical passivation of silicon-containing surfaces using organic layers
07/01/2010US20100164071 Silicon wafer and method for producing the same
07/01/2010US20100164070 Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device
07/01/2010US20100164069 Reducing High-Frequency Signal Loss in Substrates
07/01/2010US20100164068 Semiconductor structures for biasing devices
07/01/2010US20100164067 Capacitor element and semiconductor device
07/01/2010US20100164066 Integrated capacitor having a non-uniform thickness
07/01/2010US20100164065 Capacitor of semiconductor device and method for manufacturing the same
07/01/2010US20100164064 Capacitor and Method for Manufacturing the Same
07/01/2010US20100164063 Mim capacitor and method for fabricating the same
07/01/2010US20100164062 Method of manufacturing through-silicon-via and through-silicon-via structure
07/01/2010US20100164061 Semiconductor chip, semiconductor mounting module, mobile communication device, and process for producing semiconductor chip
07/01/2010US20100164060 Inductor for semiconductor device and method for fabricating the same
07/01/2010US20100164059 Semiconductor device and manufacturing method thereof
07/01/2010US20100164057 Precursors for silicon dioxide gap fill
07/01/2010US20100164056 Microelectronic assemblies with improved isolation voltage performance
07/01/2010US20100164054 Semiconductor device and method for manufacturing the same
07/01/2010US20100164053 Semiconductor device
07/01/2010US20100164052 High power integrated circuit device
07/01/2010US20100164050 Robust structure for hvpw schottky diode
07/01/2010US20100164048 Method for fabricating a semiconductor substrate and semiconductor substrate
07/01/2010US20100164028 Semiconductor pressure sensor
07/01/2010US20100164027 method for producing a component, and sensor element
07/01/2010US20100164026 Premold housing having integrated vibration isolation
07/01/2010US20100164025 Method and structure of monolithetically integrated micromachined microphone using ic foundry-compatiable processes
07/01/2010US20100164024 High aspect ratio all sige capacitively coupled mems devices
07/01/2010US20100164023 Micromechanical component and corresponding production method
07/01/2010US20100164022 Pmos transistor and method of manufacturing the same
07/01/2010US20100164021 Method of manufacturing semiconductor device
07/01/2010US20100164020 Transistor with an embedded strain-inducing material having a gradually shaped configuration
07/01/2010US20100164019 Method of manufacturing nonvolatile memory device
07/01/2010US20100164018 High-voltage metal-oxide-semiconductor device
07/01/2010US20100164017 Semiconductor device and method for fabricating the same
07/01/2010US20100164016 Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment
07/01/2010US20100164011 Techniques for Enabling Multiple Vt Devices Using High-K Metal Gate Stacks
07/01/2010US20100164005 Selective wet etch process for cmos ics having embedded strain inducing regions and integrated circuits therefrom
07/01/2010US20100164004 Methods for reducing gate dielectric thinning on trench isolation edges and integrated circuits therefrom
07/01/2010US20100164003 Multiple indium implant methods and devices and integrated circuits therefrom
07/01/2010US20100164002 Dual salicide integration for salicide through trench contacts and structures formed thereby
07/01/2010US20100163999 Semiconductor element and method of manufacturing the same
07/01/2010US20100163995 Semiconductor Device With Cooling Element
07/01/2010US20100163994 Soi device with a buried insulating material having increased etch resistivity
07/01/2010US20100163992 Semiconductor device and method for fabricating the same
07/01/2010US20100163991 Laterally double-diffused metal oxide semiconductor, and method for fabricating the same
07/01/2010US20100163990 Lateral Double Diffused Metal Oxide Semiconductor Device
07/01/2010US20100163989 Semiconductor structure and fabrication method thereof
07/01/2010US20100163988 High voltage (>100v) lateral trench power mosfet with low specific-on-resistance
07/01/2010US20100163987 Semiconductor device
07/01/2010US20100163986 Semiconductor device and method for fabricating the same
07/01/2010US20100163985 Semiconductor and method for manufacturing the same
07/01/2010US20100163984 Lateral Double Diffused Metal Oxide Semiconductor
07/01/2010US20100163983 Semiconductor Device and Method for Fabricating the Same
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