Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2010
06/15/2010US7737512 Integrated circuit devices having uniform silicide junctions
06/15/2010US7737511 Semiconductor device and method of manufacturing the same
06/15/2010US7737510 Semiconductor device and method for fabricating the same
06/15/2010US7737509 Semiconductor integrated circuit device
06/15/2010US7737508 Non-volatile semiconductor memory device and method of manufacturing the same
06/15/2010US7737507 Insulated gate field effect transistors
06/15/2010US7737506 Semiconductor device and method of manufacturing the same
06/15/2010US7737505 Semiconductor device and method of forming the same
06/15/2010US7737504 Well isolation trenches (WIT) for CMOS devices
06/15/2010US7737503 Semiconductor device and method for manufacturing the same
06/15/2010US7737502 Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drain
06/15/2010US7737501 FinFET SRAM with asymmetric gate and method of manufacture thereof
06/15/2010US7737499 SRAM device having a common contact
06/15/2010US7737497 Silver nanoparticle compositions
06/15/2010US7737495 Semiconductor device having inter-layers with stress levels corresponding to the transistor type
06/15/2010US7737494 Semiconductor device and manufacturing method thereof
06/15/2010US7737491 Trench gate field effect devices
06/15/2010US7737490 Vertical and trench type insulated gate MOS semiconductor device
06/15/2010US7737489 Printed electronic device and transistor device and manufacturing method thereof
06/15/2010US7737488 Blocking dielectric engineered charge trapping memory cell with high speed erase
06/15/2010US7737487 Nonvolatile memories with tunnel dielectric with chlorine
06/15/2010US7737486 Non-volatile semiconductor storage device and method for manufacturing the same
06/15/2010US7737485 Non-volatile memory cells including fin structures
06/15/2010US7737484 Semiconductor memory device and method of manufacturing the same
06/15/2010US7737483 Low resistance void-free contacts
06/15/2010US7737482 Self-aligned strap for embedded trench memory on hybrid orientation substrate
06/15/2010US7737481 Semiconductor memory device
06/15/2010US7737476 Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures
06/15/2010US7737472 Semiconductor integrated circuit device
06/15/2010US7737470 High-frequency diode
06/15/2010US7737469 Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
06/15/2010US7737468 Semiconductor devices having recesses filled with semiconductor materials
06/15/2010US7737466 Semiconductor device and manufacturing method thereof
06/15/2010US7737465 Semiconductor apparatus and manufacturing method thereof
06/15/2010US7737463 Light emitting diode package with a heat sink support ring and having multiple molding resins, wherein secondary molding resin with higher hardness than primary molding resin and which covers primary molding resin that covers LED die
06/15/2010US7737462 Light emitting diode and light emitting diode device including the light emitting diode element and method for manufacturing the light emitting diode
06/15/2010US7737460 White LED and manufacturing method therefor
06/15/2010US7737455 Electrode structures for LEDs with increased active area
06/15/2010US7737454 Organic light-emitting element, organic light-emitting device, and electronic apparatus
06/15/2010US7737453 Light emitting diode structure
06/15/2010US7737452 Light-emitting element package and light source apparatus using the same
06/15/2010US7737451 High efficiency LED with tunnel junction layer
06/15/2010US7737450 Light emitting diode systems
06/15/2010US7737449 Light emitting device and method of manufacturing thereof
06/15/2010US7737446 Thin films transistor array substrate and fabricating method thereof
06/15/2010US7737445 Contact portion of semiconductor device, and thin film transistor array panel for display device including the contact portion
06/15/2010US7737444 Display device and electronic device
06/15/2010US7737443 Light emitting device and method of manufacturing the same
06/15/2010US7737441 Semiconductor device and manufacturing method thereof
06/15/2010US7737438 Field-effect transistor and method for manufacturing the same
06/15/2010US7737434 Light-emitting diode illumination source
06/15/2010US7737432 Voltage controlled computing element for quantum computer
06/15/2010US7737430 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
06/15/2010US7737429 Nitride based semiconductor device using nanorods and process for preparing the same
06/15/2010US7737428 Memory component with memory cells having changeable resistance and fabrication method therefor
06/15/2010US7737051 Silicon germanium surface layer for high-k dielectric integration
06/15/2010US7737023 Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device
06/15/2010US7737014 Reduction of boron diffusivity in pFETs
06/15/2010US7737012 Manufacturing method of a semiconductor device
06/15/2010US7737006 Methods and apparatus to form electronic components with at least one N- or P-doped portion
06/15/2010US7736997 Production method of flexible electronic device
06/15/2010US7736992 Isolation trench geometry for image sensors
06/15/2010US7736981 Metal high dielectric constant transistor with reverse-T gate
06/15/2010US7736979 Method of forming nanotube vertical field effect transistor
06/15/2010US7736978 Method of manufacturing a trench transistor having a heavy body region
06/15/2010US7736977 Semiconductor device and a method for manufacturing therefor
06/15/2010US7736976 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
06/15/2010US7736959 Integrated circuit device, and method of fabricating same
06/15/2010US7736956 Lateral undercut of metal gate in SOI device
06/15/2010US7736950 Flip chip interconnection
06/15/2010US7736917 Laser beam irradiation method and method of manufacturing a thin firm transistor
06/15/2010US7736747 Used in semiconductor fabrication equipment; plasma spraying silicon to bond two silicon structures together along a seam; parts joined are each self-supporting
06/15/2010US7736070 Double mold optocoupler
06/10/2010WO2010065967A2 Microfluidic-based lab-on-a-test card for a point-of-care analyzer
06/10/2010WO2010065835A2 Backplane structures for solution processed electronic devices
06/10/2010WO2010065823A2 Backplane structures for solution processed electronic devices
06/10/2010WO2010065587A2 Ferroelectric nanoshell devices
06/10/2010WO2010065517A1 Electromechanical devices and methods for fabrication of the same
06/10/2010WO2010065428A2 Mos-gated power devices, methods, and integrated circuits
06/10/2010WO2010065427A2 Power device structures and methods
06/10/2010WO2010065412A2 A junction field effect transistor having a double gate structure and method of making same
06/10/2010WO2010065334A2 Semiconductor devices with current shifting regions and related methods
06/10/2010WO2010065332A2 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
06/10/2010WO2010064706A1 Semiconductor device
06/10/2010WO2010064590A1 Semiconductor device and manufacturing method thereof
06/10/2010WO2010064575A1 Titanium oxide particles, manufacturing method thereof, magnetic memory, and charge storage type memory
06/10/2010WO2010064533A1 Image rendering device
06/10/2010WO2010064383A1 Field effect transistor and method for manufacturing same
06/10/2010WO2010064382A1 Semiconductor device and semiconductor device manufacturing method
06/10/2010WO2010064370A1 Semiconductor device and manufacturing method therefor
06/10/2010WO2010064369A1 Semiconductor device and manufacturing method therefor
06/10/2010WO2010064362A1 Field effect transistor
06/10/2010WO2010064343A1 Semiconductor device, and method for manufacturing same
06/10/2010WO2010064301A1 Method for fabricating optical matrix device
06/10/2010WO2010013984A3 Method and apparatus for manufacturing thin-film transistor
06/10/2010WO2009090466A3 Downhole sensing system using carbon nanotube fet
06/10/2010US20100145657 Integrated sensor array with offset reduction
06/10/2010US20100144115 Non-volatile semiconductor memory device and method of manufacturing the same
06/10/2010US20100144111 Process for production of soi substrate and process for production of semiconductor device
06/10/2010US20100144109 Transistor in a semiconductor substrate having high-concentration source and drain region formed at the bottom of a trench adjacent to the gate electrode
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