| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/17/2010 | US20100148251 Semiconductor device and method for manufacturing the same |
| 06/17/2010 | US20100148250 Metal oxide semiconductor device |
| 06/17/2010 | US20100148249 Method Of Manufacturing A Memory Device |
| 06/17/2010 | US20100148248 Semiconductor device having gate trenches and manufacturing method thereof |
| 06/17/2010 | US20100148247 Semiconductor device |
| 06/17/2010 | US20100148246 Power mosfet device structure for high frequency applications |
| 06/17/2010 | US20100148245 Electronic device including a trench and a conductive structure therein |
| 06/17/2010 | US20100148244 Semiconductor element and electrical apparatus |
| 06/17/2010 | US20100148243 Semiconductor device and method for fabricating the same |
| 06/17/2010 | US20100148242 Semiconductor device |
| 06/17/2010 | US20100148241 Semiconductor device and method of manufacturing the same |
| 06/17/2010 | US20100148240 Semiconductor device and manufacturing method thereof |
| 06/17/2010 | US20100148239 Gate structure of semiconductor device and methods of forming word line structure and memory |
| 06/17/2010 | US20100148238 Non-volatile memory and fabricating method thereof |
| 06/17/2010 | US20100148237 Non-volatile semiconductor storage device and method of manufacturing the same |
| 06/17/2010 | US20100148234 Subresolution silicon features and methods for forming the same |
| 06/17/2010 | US20100148232 Surface treatment of hydrophobic ferroelectric polymers for printing |
| 06/17/2010 | US20100148229 Insulating resin composition |
| 06/17/2010 | US20100148228 Semiconductor and manufacturing method of the same |
| 06/17/2010 | US20100148227 Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the same |
| 06/17/2010 | US20100148224 Power junction field effect power transistor with highly vertical channel and uniform channel opening |
| 06/17/2010 | US20100148223 Semiconductor device and method of manufacturing the same |
| 06/17/2010 | US20100148222 Gas sensor having a field-effect transistor |
| 06/17/2010 | US20100148217 Graded high germanium compound films for strained semiconductor devices |
| 06/17/2010 | US20100148215 IGBT Having One or More Stacked Zones Formed within a Second Layer of the IGBT |
| 06/17/2010 | US20100148214 Semiconductor device internally having insulated gate bipolar transistor |
| 06/17/2010 | US20100148213 Tunnel device |
| 06/17/2010 | US20100148212 Method for producing group iii nitride semiconductor crystal, group iii nitride semiconductor substrate, and semiconductor light- emitting device |
| 06/17/2010 | US20100148204 Light-Emitting Element and Display Device |
| 06/17/2010 | US20100148195 Method for improved growth of semipolar (al,in,ga,b)n |
| 06/17/2010 | US20100148188 Laser-induced flaw formation in nitride semiconductors |
| 06/17/2010 | US20100148187 Semiconductor device |
| 06/17/2010 | US20100148186 Vertical junction field effect transistors having sloped sidewalls and methods of making |
| 06/17/2010 | US20100148184 Gan-based field effect transistor |
| 06/17/2010 | US20100148183 Method of Forming a Carbon Nanotube-Based Contact to Semiconductor |
| 06/17/2010 | US20100148182 Thin flim transistor substrate and manufacturing method thereof |
| 06/17/2010 | US20100148181 Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices |
| 06/17/2010 | US20100148180 Thin film transistor array panel with common bars of different widths |
| 06/17/2010 | US20100148179 Semiconductor Device and Method of Manufacturing the Same |
| 06/17/2010 | US20100148178 Thin film transistor and display device |
| 06/17/2010 | US20100148176 Thin film transistor display panel and manufacturing method thereof |
| 06/17/2010 | US20100148175 Thin film transistor and display device |
| 06/17/2010 | US20100148174 GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufacturing GaN Epitaxial Wafer and Semiconductor Devices |
| 06/17/2010 | US20100148171 Semiconductor device and method of manufacturing semiconductor device |
| 06/17/2010 | US20100148170 Field effect transistor and display apparatus |
| 06/17/2010 | US20100148169 Thin-film transistor substrate and method of fabricating the same |
| 06/17/2010 | US20100148168 Integrated circuit structure |
| 06/17/2010 | US20100148155 Thin film transistor, method of forming the same and flat panel display device having the same |
| 06/17/2010 | US20100148153 Group III-V devices with delta-doped layer under channel region |
| 06/17/2010 | US20100148152 Electrically controlled catalytic nanowire growth |
| 06/17/2010 | US20100148148 Fabrication method of a light-emitting element and the light-emitting element |
| 06/17/2010 | US20100148144 Semiconducting nanoparticles with surface modification |
| 06/17/2010 | US20100148040 Geiger-mode photodiode with integrated and adjustable quenching resistor, photodiode array, and manufacturing method thereof |
| 06/17/2010 | US20100147370 Multiple stack deposition for epitaxial lift off |
| 06/17/2010 | US20100147369 Solar cell having nanodiamond quantum wells |
| 06/17/2010 | DE112004001441B4 Verfahren zur Herstellung Asymmetrischer Seitenwand-Abstandshalter eines Halbleiterbauelements A process for the preparation of asymmetric sidewall spacers of a semiconductor device |
| 06/17/2010 | DE10358046B4 Bipolartransistor mit erhöhtem Basisanschlussgebiet und Verfahren zu seiner Herstellung Bipolar transistor with increased base connection region and method for its manufacture |
| 06/17/2010 | DE102009006802B3 Verfahren und Halbleiterbauelement mit Einstellung der Austrittsarbeit in einer Gateelektrodenstruktur mit großem ε nach der Transistorherstellung unter Anwendung von Lanthanum The method and semiconductor device including adjustment of the work function in a gate electrode structure with large ε after the transistor production using lanthanum |
| 06/17/2010 | DE102009001552A1 Bipolartransistor mit selbstjustiertem Emitterkontakt Self-aligned bipolar transistor with emitter contact |
| 06/17/2010 | DE102008054575A1 Electronic module has crystalline semiconductor substrate with integrated circuit and discrete component is electrically connected with integrated circuit |
| 06/17/2010 | DE102008049733B3 Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand zum Kanalgebiet und Verfahren zur Herstellung des Transistors Transistor with embedded Si / Ge material with a lesser distance from the channel region and methods of making the transistor |
| 06/17/2010 | DE102008030864B4 Halbleiterbauelement als Doppelgate- und Tri-Gatetransistor, die auf einem Vollsubstrat aufgebaut sind und Verfahren zur Herstellung des Transistors A semiconductor device as Doppelgate- and tri-gate transistor constructed on a solid substrate and methods for producing the transistor |
| 06/17/2010 | DE10056873B4 Verfahren zur Herstellung einer Gateelektrode eines Feldeffekttransistors mit verringertem Gatewiderstand A method of manufacturing a gate electrode of a field effect transistor with reduced gate resistance |
| 06/17/2010 | DE10024266B4 Verfahren zur Herstellung eines mikromechanischen Bauelements A process for producing a micromechanical component |
| 06/16/2010 | EP2197034A2 Field effect transistor and display apparatus |
| 06/16/2010 | EP2197033A1 Organic thin film transistor and organic thin film light-emitting transistor |
| 06/16/2010 | EP2197025A1 Method for manufacturing a power semiconductor device |
| 06/16/2010 | EP2197023A1 Semiconductor substrate and semiconductor device |
| 06/16/2010 | EP2195866A2 Nanowire electronic devices and method for producing the same |
| 06/16/2010 | EP2195850A1 Oxide semiconductor thin-film transistor |
| 06/16/2010 | EP2195849A1 Oxide semiconductor device including insulating layer and display apparatus using the same |
| 06/16/2010 | EP2195847A1 Semiconductor module |
| 06/16/2010 | EP2195838A2 Semiconductor device and wire bonding method |
| 06/16/2010 | EP2195829A1 Profile engineered thin film devices and structures |
| 06/16/2010 | EP1042810B1 Formation of control and floating gates of semiconductor non-volatile memories |
| 06/16/2010 | CN201508838U Power heterojunction bipolar transistor with high thermal stability |
| 06/16/2010 | CN1976007B Semiconductor device and method of manufacturing semiconductor device |
| 06/16/2010 | CN1973385B Functional molecule apparatus |
| 06/16/2010 | CN1914737B Semiconductor element and its manufacturing method and liquid-crystal display device and its manufacturing method |
| 06/16/2010 | CN1913163B Thin film transistor substrate and method of manufacturing the same |
| 06/16/2010 | CN1905212B Transistor and method for forming the same |
| 06/16/2010 | CN1862789B Film transistor array panel including multi-layered thin films, and method of manufacturing the panel |
| 06/16/2010 | CN1758443B High voltage operating field effect transistor, and bias circuit therefor and high voltage circuit thereof |
| 06/16/2010 | CN1749834B Liquid crystal display device and manufacturing method therefor |
| 06/16/2010 | CN1656607B Compound semiconductor and compound insulator, and manufacturing method and use thereof |
| 06/16/2010 | CN1573483B Thin film transistor substrate and method of manufacturing the same |
| 06/16/2010 | CN1555064B Nonvolatile semiconductor memory device |
| 06/16/2010 | CN1552101B Trench DMOS transistor having lightly doped source structure |
| 06/16/2010 | CN101743637A Small gauge pressure sensor using wafer bonding and electrochemical etch stopping |
| 06/16/2010 | CN101743630A Mos transistors for thin soi integration and methods for fabricating the same |
| 06/16/2010 | CN101743629A Semiconductor device provided with thin film transistor and method for manufacturing the semiconductor device |
| 06/16/2010 | CN101743628A Process for producing organic semiconductor element, organic semiconductor element, and organic semiconductor device |
| 06/16/2010 | CN101743627A Methods of forming improved epi fill on narrow isolation bounded source/drain regions and structures formed thereby |
| 06/16/2010 | CN101743626A Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon |
| 06/16/2010 | CN101743623A Laminate structure, electronic device, and display device |
| 06/16/2010 | CN101743616A Manufacturing method of semiconductor device |
| 06/16/2010 | CN101740641A Semiconductor device |
| 06/16/2010 | CN101740640A Pellet electrode type diode |
| 06/16/2010 | CN101740639A Polycrystalline silicon electric resistance and manufacturing method thereof |
| 06/16/2010 | CN101740638A Floating gate flash memory device adopting T-shaped gate structure and manufacturing technology thereof |