Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2010
06/22/2010US7741656 Semiconductor device and manufacturing the same
06/22/2010US7741655 Semiconductor device
06/22/2010US7741654 Group III nitride semiconductor optical device
06/22/2010US7741649 Semiconductor light emitting device and method for manufacturing the same
06/22/2010US7741648 Penetrating hole type LED chip package structure using a ceramic material as a substrate and method for manufacturing the same
06/22/2010US7741646 Liquid crystal display device and fabricating method thereof
06/22/2010US7741645 Three-dimensional integrated heterogeneous semiconductor structure
06/22/2010US7741643 Thin film transistor
06/22/2010US7741642 Semiconductor device and manufacturing method thereof
06/22/2010US7741641 TFT substrate and display device having the same
06/22/2010US7741640 Top-emission organic light-emitting display device
06/22/2010US7741637 ZnO-based semiconductor device
06/22/2010US7741636 Programmable resistive RAM and manufacturing method
06/22/2010US7741634 Josephson junction device for superconductive electronics with a magnesium diboride
06/22/2010US7741631 Phase-changeable memory devices including phase-changeable materials on silicon nitride layers
06/22/2010US7741193 SOI structure having a SiGe layer interposed between the silicon and the insulator
06/22/2010US7741180 Method of manufacturing semiconductor device with recess gate transistor
06/22/2010US7741179 Method of manufacturing flash semiconductor device
06/22/2010US7741165 Polycrystalline SiGe Junctions for advanced devices
06/22/2010US7741145 Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing the same
06/22/2010US7741132 Display panel, display panel inspection method, and display panel manufacturing method
06/22/2010US7740376 Flexible light emitting module
06/22/2010CA2481791C Device for the injection moulding of moulded bodies made from plastic
06/22/2010CA2395608C Junction field effect transistor and method of manufacturing the same
06/17/2010WO2010068554A2 Semiconductor heterostructure diodes
06/17/2010WO2010068385A1 Low power memory device with jfet device structures
06/17/2010WO2010068384A1 Jfet device structures and methods for fabricating the same
06/17/2010WO2010068055A2 Planar gate-controlled element and method for fabricating the same
06/17/2010WO2010067997A2 Thin film transistor and method of manufacturing same
06/17/2010WO2010067698A1 Thin film transistor and display device
06/17/2010WO2010067645A1 Display device
06/17/2010WO2010067571A1 Composite oxide sintered body and sputtering target comprising same
06/17/2010WO2010067525A1 Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate
06/17/2010WO2010067520A1 Magnetoresistance effect element and magnetic memory cell and magnetic random access memory using same
06/17/2010WO2010067517A1 Method for manufacturing semiconductor device
06/17/2010WO2010067483A1 Thin film transistor and method for manufacturing the thin film transistor
06/17/2010WO2010067430A1 Semiconductor device
06/17/2010WO2010067407A1 Semiconductor memory device and method for fabricating the same
06/17/2010WO2010067214A1 Method of manufacturing a tunnel transistor and ic comprising the same
06/17/2010WO2010066630A1 Bipolar transistor having self-adjusted emitter contact
06/17/2010WO2010039208A3 Guard ring structures and method of fabricating thereof
06/17/2010WO2010021536A3 Durable planar reference electrode
06/17/2010US20100152057 High-sensitivity nanoscale wire sensors
06/17/2010US20100151664 Method of Manufacturing a Semiconductor Device
06/17/2010US20100151662 Field effect transistor and its manufacturing method
06/17/2010US20100151644 Semiconductor device and method for manufacturing the same
06/17/2010US20100151634 Display Device
06/17/2010US20100151607 Liquid Crystal Electro-Optic Device
06/17/2010US20100151606 Method of forming array substrate for LCD
06/17/2010US20100150194 Nitride semiconductor optical element and manufacturing method thereof
06/17/2010US20100149898 Antifuses and program circuits having the same
06/17/2010US20100149864 Memory circuit with quantum well-type carrier storage
06/17/2010US20100149862 Magnetic random access memory
06/17/2010US20100148845 Limiter and semiconductor device using the same
06/17/2010US20100148825 Semiconductor devices and methods of fabricating the same
06/17/2010US20100148823 Semiconductor device
06/17/2010US20100148372 Integrated circuit package having reduced interconnects
06/17/2010US20100148331 Semiconductor devices including semiconductor dice in laterally offset stacked arrangement
06/17/2010US20100148324 Dual Insulating Layer Diode With Asymmetric Interface State And Method Of Fabrication
06/17/2010US20100148323 Impurity introducing method using optical characteristics to determine annealing conditions
06/17/2010US20100148322 Composite substrate and method of fabricating the same
06/17/2010US20100148321 Micro-Electro-Mechanical-System Device with Particles Blocking Function and Method for Making Same
06/17/2010US20100148320 Vicinal gallium nitride substrate for high quality homoepitaxy
06/17/2010US20100148319 Substrates for High-Efficiency Thin-Film Solar Cells Based on Crystalline Templates
06/17/2010US20100148318 Three-Dimensional Semiconductor Template for Making High Efficiency Thin-Film Solar Cells
06/17/2010US20100148317 Critical dimension reduction and roughness control
06/17/2010US20100148310 Semiconductor wafer, semiconductor device using the same, and method and apparatus for producing the same
06/17/2010US20100148309 Method for manufacturing semiconductor device
06/17/2010US20100148308 Dopant Profile Control for Ultrashallow Arsenic Dopant Profiles
06/17/2010US20100148307 Semiconductor device including metal-insulator-metal capacitor arrangement
06/17/2010US20100148306 Capacitor and Method of Manufacturing the Same
06/17/2010US20100148305 Semiconductor Device and Fabricating Method Thereof
06/17/2010US20100148304 Integrated circuit decoupling capacitors
06/17/2010US20100148303 Semiconductor device and method for fabricating the same
06/17/2010US20100148302 Capacitor-equipped semiconductor device
06/17/2010US20100148301 Semiconductor device and manufacturing method thereof
06/17/2010US20100148300 Isolation trench fill using oxide liner and nitride etch back technique with dual trench depth capability
06/17/2010US20100148299 Method of manufacturing semiconductor device, and semiconductor device
06/17/2010US20100148295 Back-illuminated cmos image sensors
06/17/2010US20100148288 Vertical Cell Edge Junction Magnetoelectronic Device Family
06/17/2010US20100148287 Truss structure and manufacturing method thereof
06/17/2010US20100148286 Contact-force sensor package and method of fabricating the same
06/17/2010US20100148285 MEMS Component and Method for Production
06/17/2010US20100148284 Mems device having a movable electrode
06/17/2010US20100148282 Wafer joining method, wafer composite, and chip
06/17/2010US20100148281 Semiconductor device and method for fabricating the same
06/17/2010US20100148280 Semiconductor device and method for fabricating the same
06/17/2010US20100148270 Methods of channel stress engineering and structures formed thereby
06/17/2010US20100148269 Tunable spacers for improved gapfill
06/17/2010US20100148266 System and method for isolated nmos-based esd clamp cell
06/17/2010US20100148265 Esd protection device
06/17/2010US20100148264 Electrostatic discharge protection device and method of fabricating the same
06/17/2010US20100148262 Resistors and Methods of Manufacture Thereof
06/17/2010US20100148260 Semiconductor device including a crystal semiconductor layer, its fabrication and its operation
06/17/2010US20100148259 Soi substrates and soi devices, and methods for forming the same
06/17/2010US20100148258 Semiconductor device and method of manufacturing the same
06/17/2010US20100148257 MOS-FET Having a Channel Connection, and Method for the Production of a MOS-FET Having a Channel Connection
06/17/2010US20100148256 Lateral diffused metal oxide semiconductor (ldmos) devices with electrostatic discharge (esd) protection capability in integrated circuit
06/17/2010US20100148255 Lateral high-voltage mos transistor with a resurf structure
06/17/2010US20100148252 Semiconductor device having transistor and method of manufacturing the same
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