Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2010
06/29/2010US7745807 Current constricting phase change memory element structure
06/29/2010US7745803 Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device
06/29/2010US7745345 ZnO based semiconductor device manufacture method
06/29/2010US7745320 Method for reducing silicide defects in integrated circuits
06/29/2010US7745317 Semiconductor device and method of manufacturing the same
06/29/2010US7745291 Method of fabricating a high-voltage transistor with an extended drain structure
06/29/2010US7745289 Method of forming a FET having ultra-low on-resistance and low gate charge
06/29/2010US7745287 Floating trap type nonvolatile memory device and method of fabricating the same
06/29/2010US7745283 Method of fabricating memory transistor
06/29/2010US7745279 Capacitor that includes high permittivity capacitor dielectric
06/29/2010US7745278 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics
06/29/2010US7745275 Integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region
06/29/2010US7745274 Gate self aligned low noise JFET
06/29/2010US7745271 Method of manufacturing a semiconductor device
06/29/2010US7745257 High power MCM package with improved planarity and heat dissipation
06/29/2010US7745250 Image sensor and method for manufacturing the same
06/29/2010US7744717 Process for enhancing the resolution of a thermally transferred pattern
06/24/2010WO2010071594A1 A nanostructured device
06/24/2010WO2010071183A1 Method for manufacturing semiconductor device
06/24/2010WO2010071174A1 Method for initializing magnetoresistive element, and magnetoresistive element
06/24/2010WO2010071160A1 Active matrix substrate manufacturing method and liquid crystal display device manufacturing method
06/24/2010WO2010071159A1 Insulated gate transistor, active matrix substrate, liquid crystal display unit, and method of production of same
06/24/2010WO2010071084A1 Semiconductor device and manufacturing method therefor
06/24/2010WO2010071034A1 Method for manufacturing transistor
06/24/2010WO2010071031A1 Wiring structure, semiconductor element, wiring substrate, display panel, and display device
06/24/2010WO2010071015A1 Semiconductor device
06/24/2010WO2010070981A1 Method and apparatus for manufacturing semiconductor device
06/24/2010WO2010070863A1 Epitaxial substrate for electronic devices and manufacturing method therefor
06/24/2010WO2010070832A1 Sintered complex oxide and sputtering target comprising same
06/24/2010WO2010070824A1 Semiconductor device, method for manufacturing semiconductor device, and switch circuit
06/24/2010WO2010070802A1 Method for manufacturing optical matrix device
06/24/2010WO2010070782A1 Semiconductor device and method for manufacturing same
06/24/2010WO2010069618A1 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
06/24/2010US20100159785 In-plane switching mode liquid crystal display device
06/24/2010US20100159689 Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same
06/24/2010US20100159686 Semiconductor device and method of manufacturing the same
06/24/2010US20100159658 High speed lateral heterojunction misfets realized by 2-dimensional bandgap engineering and methods thereof
06/24/2010US20100158064 Semiconductor light emitter
06/24/2010US20100157710 Array Operation Using A Schottky Diode As a Non-Ohmic Isolation Device
06/24/2010US20100157690 Semiconductor Memory Device of Single Gate Structure
06/24/2010US20100157689 Semiconductor device
06/24/2010US20100157680 Semiconductor device and method of manufacturing the same
06/24/2010US20100157668 Memory device and method of operating and fabricating the same
06/24/2010US20100157664 Magnetoresistive memory cell using floating body effect, memory device having the same, and method of operating the memory device
06/24/2010US20100157165 Method of Manufacturing a Semiconductor Device
06/24/2010US20100156511 Bias voltage generation circuit for an soi radio frequency switch
06/24/2010US20100156510 Soi radio frequency switch for reducing high frequency harmonics
06/24/2010US20100156475 Field effect transistor with electric field and space-charge control contact
06/24/2010US20100156286 Organic electroluminescent display device and method of fabricating the same
06/24/2010US20100155953 Conductive oxide electrodes
06/24/2010US20100155911 ESD Protection Diode in RF pads
06/24/2010US20100155908 Passivation structure and fabricating method thereof
06/24/2010US20100155906 Semiconductor device and method of forming patterns for the semiconductor device
06/24/2010US20100155905 Semiconductor device and its manufacturing method
06/24/2010US20100155904 Semiconductor device having cmp dummy pattern and method for manufacturing the same
06/24/2010US20100155903 Annealed wafer and method for producing annealed wafer
06/24/2010US20100155902 Manufacturing Method of Nitride Substrate, Nitride Substrate, and Nitride-Based Semiconductor Device
06/24/2010US20100155901 Fabricating a gallium nitride layer with diamond layers
06/24/2010US20100155900 Fabricating a gallium nitride device with a diamond layer
06/24/2010US20100155899 Etching method, etching mask and method for manufacturing semiconductor device using the same
06/24/2010US20100155898 METHOD FOR ENHANCING TENSILE STRESS AND SOURCE/DRAIN ACTIVIATION USING Si:C
06/24/2010US20100155897 Deep trench varactors
06/24/2010US20100155896 High-frequency bipolar transistor and method for the production thereof
06/24/2010US20100155895 Power semiconductor device
06/24/2010US20100155894 Fabricating Bipolar Junction Select Transistors For Semiconductor Memories
06/24/2010US20100155892 Semiconductor Constructions
06/24/2010US20100155891 Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof
06/24/2010US20100155890 Mim capacitor of semiconductor device and manufacturing method thereof
06/24/2010US20100155887 Common plate capacitor array connections, and processes of making same
06/24/2010US20100155881 Forming Isolation Regions For Integrated Circuits
06/24/2010US20100155879 Semiconductor device
06/24/2010US20100155878 Configuration of high-voltage semiconductor power device to achieve three dimensional charge coupling
06/24/2010US20100155877 novel schottky diode for high speed and radio frequency application
06/24/2010US20100155876 Junction barrier Schottky (JBS) with floating islands
06/24/2010US20100155866 High temperature resistant solid state pressure sensor
06/24/2010US20100155865 Semiconductor device and method of making the same
06/24/2010US20100155864 Mems process and device
06/24/2010US20100155863 Method for manufacturing a microelectronic package comprising a silicon mems microphone
06/24/2010US20100155862 Package for electronic component, manufacturing method thereof and sensing apparatus
06/24/2010US20100155861 Microelectromechanical device with isolated microstructures and method of producing same
06/24/2010US20100155860 Two step method to create a gate electrode using a physical vapor deposited layer and a chemical vapor deposited layer
06/24/2010US20100155859 Selective silicide process
06/24/2010US20100155858 Asymmetric extension device
06/24/2010US20100155856 Transistor, a transistor arrangement and method thereof
06/24/2010US20100155852 Integrating Diverse Transistors On The Same Wafer
06/24/2010US20100155848 Trigate static random-access memory with independent source and drain engineering, and devices made therefrom
06/24/2010US20100155847 Self aligned field effect transistor structure
06/24/2010US20100155846 Metal-insulator-semiconductor tunneling contacts
06/24/2010US20100155842 Body contacted hybrid surface semiconductor-on-insulator devices
06/24/2010US20100155841 Semiconductor Device and Method for Fabricating the Same
06/24/2010US20100155840 Power mosfet and fabricating method thereof
06/24/2010US20100155839 Lateral mosfet with substrate drain connection
06/24/2010US20100155838 Trench type mosfet device and method of manufacturing the same
06/24/2010US20100155836 Co-packaging approach for power converters based on planar devices, structure and method
06/24/2010US20100155834 Semiconductor device and a method for manufacturing the same
06/24/2010US20100155833 Semiconductor device having vertical type MOSFET and manufacturing method thereof
06/24/2010US20100155832 Method for fabricating semiconductor memory device
06/24/2010US20100155831 Deep trench insulated gate bipolar transistor
06/24/2010US20100155830 Electronic switching device
06/24/2010US20100155829 Device for protecting semiconductor device from electrostatic discharge and method for fabricating the same
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