Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2010
06/16/2010CN101740637A Semiconductor device and method for manufacturing the same
06/16/2010CN101740636A Thin film transistor and display device
06/16/2010CN101740635A Thin-film device and manufacturing method thereof
06/16/2010CN101740634A Semiconductor device and method for manufacturing the same
06/16/2010CN101740633A Semiconductor device and method for manufacturing the same
06/16/2010CN101740632A Semiconductor device and method for manufacturing the same
06/16/2010CN101740631A Semiconductor device and method for manufacturing the semiconductor device
06/16/2010CN101740630A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
06/16/2010CN101740629A Semiconductor device and fabricating method thereof
06/16/2010CN101740628A Integrated circuit transistors
06/16/2010CN101740627A Asymmetric metal-oxide-semiconductor transistors
06/16/2010CN101740626A Ldmos transistor and method for manufacturing the transistor
06/16/2010CN101740625A Lateral double diffused mos device and method for manufacturing the device
06/16/2010CN101740624A Semiconductor device and method of manufacturing the same
06/16/2010CN101740623A Semiconductor device having trench shield electrode structure
06/16/2010CN101740622A Trench shielding structure for semiconductor device and method
06/16/2010CN101740621A Tunnel field-effect transistor with metal source
06/16/2010CN101740620A Semiconductor device with grid side wall layer and forming method thereof
06/16/2010CN101740619A Nano-wire field effect transistor
06/16/2010CN101740618A Metal-semiconductor field effect transistor
06/16/2010CN101740617A Semiconductor element with regional resistance of low-junction field effect transistor
06/16/2010CN101740616A GGNMOS (grounded-gate negative-channel metal oxide semiconductor) device and making method thereof
06/16/2010CN101740615A Groove type power MOS transistor and preparation method thereof
06/16/2010CN101740614A Laterally diffused metal oxide semiconductor (LDMOS) structure for protecting channel district by utilizing polysilicon field polar plate
06/16/2010CN101740613A Transistor controlling short channel effect and the method of manufacturing the same
06/16/2010CN101740612A Contact structure for semiconductor device having trench shield electrode and method
06/16/2010CN101740601A Resistive memory device and method of fabricating the same
06/16/2010CN101740584A Method for manufacturing semiconductor device, and semiconductor device and electronic device
06/16/2010CN101740583A Semiconductor device and method for manufacturing the same
06/16/2010CN101740575A Side wall type gate electrode flash memory unit structure with shared word line and manufacturing method thereof
06/16/2010CN101740573A Semiconductor device
06/16/2010CN101740571A Semiconductor integrated circuit device
06/16/2010CN101740570A Complementary metal oxide semiconductor transistor device and manufacturing method thereof
06/16/2010CN101740567A Semiconductor device
06/16/2010CN101740565A Thin film transistor, method of manufacturing the same, and organic light emitting diode display device including the same
06/16/2010CN101740564A Thin film transistor substrate and display device
06/16/2010CN101740515A Semiconductor component and method of manufacture
06/16/2010CN101740514A MOS (Metal Oxide Semiconductor) transistor and fabricating method thereof
06/16/2010CN101740513A MOS (Metal Oxide Semiconductor) transistor and fabricating method thereof
06/16/2010CN101740470A Method for forming contact hole and semiconductor device
06/16/2010CN101740398A Semiconductor device and method for manufacturing the semiconductor device
06/16/2010CN101740395A Semiconductor component and method of manufacture
06/16/2010CN101740394A Semiconductor component and method of manufacture
06/16/2010CN101740393A Semiconductor device and manufacture method thereof
06/16/2010CN101740389A MOS (Metal Oxide Semiconductor) transistor and forming method thereof
06/16/2010CN101740384A Method for preparing enhanced aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility
06/16/2010CN101740372A Gate structure including modified high-k gate dielectric and metal gate interface
06/16/2010CN101740367A Method for manufacturing stepped gate oxide and semiconductor device
06/16/2010CN101740356A Semiconductor device and method of manufacturing the semiconductor device
06/16/2010CN101740195A Semiconductor solenoid inductor and manufacture method thereof
06/16/2010CN101734609A Semiconductor nano material and device
06/16/2010CN101409284B Semiconductor device
06/16/2010CN101393858B Semiconductor device, electroluminescent device and method of manufacturing electroluminescent display device
06/16/2010CN101375402B Transverse SOI semiconductor devices and manufacturing method thereof
06/16/2010CN101375373B Non-volatile memory device having a gap in the tunnuel insulating layer and method of manufacturing the same
06/16/2010CN101355106B Semiconductor device
06/16/2010CN101335297B Semiconductor device and manufacturing method thereof
06/16/2010CN101331591B Alxgayin1-x-yn crystal substrate, semiconductor device, and method for manufacturing the same
06/16/2010CN101326621B Field effect transistor structure with an insulating layer at the junction
06/16/2010CN101325158B Semiconductor device and method of forming gate thereof
06/16/2010CN101308874B High voltage semiconductor device and method of manufacturing the same
06/16/2010CN101276844B Memory cell of nonvolatile semiconductor memory
06/16/2010CN101266976B Semiconductor device
06/16/2010CN101262040B Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method
06/16/2010CN101228636B Power semiconductor device as well as method for making the same
06/16/2010CN101217162B A high voltage N-type MOS transistor and the corresponding manufacturing method
06/16/2010CN101183683B Method and structure for reducing floating body effects in mosfet devices
06/16/2010CN101160667B A hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performance
06/16/2010CN101151891B Drive method for driving element having capacity impedance, drive device, and imaging device
06/16/2010CN101140930B Semiconductor device and method of manufacture thereof
06/16/2010CN101127297B Semiconductor device having improved electrical characteristics and method of manufacturing the same
06/16/2010CN101124680B High voltage PMOS transistor and manufacturing method thereof
06/16/2010CN101095224B Method for nitriding tunnel oxide film, method for manufacturing non-volatile memory device, non-volatile memory device, control program and computer-readable storage medium
06/16/2010CN101086968B Bottom gate thin film transistor and method of manufacturing the same
06/16/2010CN101026192B Semiconductor device and method of manufacturing the same
06/16/2010CN101009333B Semiconductor device
06/15/2010US7738764 Light emitting device package and method of manufacturing the same
06/15/2010US7738304 Multiple use memory chip
06/15/2010US7737926 Dynamic LED matrix lighting control using scanning architecture
06/15/2010US7737562 Semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode
06/15/2010US7737561 Dual damascene integration of ultra low dielectric constant porous materials
06/15/2010US7737559 Semiconductor constructions
06/15/2010US7737558 Semiconductor device with a high-frequency interconnect
06/15/2010US7737557 Semiconductor apparatus
06/15/2010US7737536 Capacitive techniques to reduce noise in high speed interconnections
06/15/2010US7737534 Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer
06/15/2010US7737533 Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage
06/15/2010US7737532 Hybrid Schottky source-drain CMOS for high mobility and low barrier
06/15/2010US7737531 Wafer including a reinforcing flange formed upright at a periphery and method for manufacturing the same
06/15/2010US7737530 Semiconductor device structures for bipolar junction transistors and methods of fabricating such structures
06/15/2010US7737529 Printed circuit board with film capacitor embedded therein and method for manufacturing the same
06/15/2010US7737527 Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device
06/15/2010US7737526 Isolated trench MOSFET in epi-less semiconductor sustrate
06/15/2010US7737524 Lateral thin-film SOI device having a field plate with isolated metallic regions
06/15/2010US7737523 Semiconductor device
06/15/2010US7737522 Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction
06/15/2010US7737521 Field effect power transistor
06/15/2010US7737515 Method of assembly using array of programmable magnets
06/15/2010US7737514 MEMS pressure sensor using area-change capacitive technique
06/15/2010US7737513 Chip assembly including package element and integrated circuit chip
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