Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2010
06/30/2010CN101765903A Method of processing a high-k dielectric for CET scaling
06/30/2010CN101765776A Acceleration sensor
06/30/2010CN101764162A Metallic oxide field-effect diode and MOS diode
06/30/2010CN101764161A Device for protecting semiconductor device from electrostatic discharge and method for fabricating the same
06/30/2010CN101764160A Semiconductor device
06/30/2010CN101764159A Metallic oxide semiconductor field effect tube with reduced breakdown voltage
06/30/2010CN101764158A Body contacted hybrid surface semiconductor-on-insulator devices and methods
06/30/2010CN101764157A Silicon-on-insulator lateral double-diffused metallic oxide semiconductor tube and preparation method
06/30/2010CN101764156A Tunneling transistor using source electrode made of narrow forbidden-band gap material and manufacturing method thereof
06/30/2010CN101764155A Grooved field-effect tube and preparation method thereof
06/30/2010CN101764154A Transistors with metal gate and methods for forming the same
06/30/2010CN101764153A Laterally diffused metal oxide semiconductor element
06/30/2010CN101764152A Reinforced transistor structure with high electron mobility and fabrication method thereof
06/30/2010CN101764151A SCR ESD protective structure with high maintaining voltage
06/30/2010CN101764150A Silicon-on-insulator lateral insulated gate bipolar transistor and process manufacturing method
06/30/2010CN101764143A Magnetoresistive memory cell using floating body effect, memory device having the same, and method of operating the memory device
06/30/2010CN101764139A Semiconductor device including insulated gate bipolar transistor and diode
06/30/2010CN101764136A Interdigital structure capable of regulating channel current of vertical gate SOI CMOS devices
06/30/2010CN101764135A Semiconductor memory device of single gate structure
06/30/2010CN101764104A Semiconductor structures, methods of manufacturing the same, and methods of operating the same.
06/30/2010CN101764098A Integrating diverse transistors on the same wafer
06/30/2010CN101764096A Vertical channel type nonvolatile memory device and method for fabricating the same
06/30/2010CN101764092A Semiconductor structure, forming and operating method thereof
06/30/2010CN101764088A Lightly-doped ion implantation method and I/O metal-oxide semiconductor field effect tube (MOSFET)
06/30/2010CN101764064A Method of manufacturing thin film transistor, thin film transistor, and display unit
06/30/2010CN101764063A Semiconductor device and method for fabricating the same
06/30/2010CN101764062A N-fet with a highly doped source/drain and strain booster
06/30/2010CN101764061A Power metal-oxide-semiconductor field effect transistor structure and processing method thereof
06/30/2010CN101764054A Compound semiconductor epi-wafer and preparation method thereof
06/30/2010CN101477999B SOI voltage resistant structure having interface charge island for power device
06/30/2010CN101414624B Gamma gate heterojunction field effect transistor and preparation method thereof
06/30/2010CN101414083B LCD display panel, pixel structure and switch device
06/30/2010CN101330012B Method of preparing non-volatility EMS memory and structure thereof
06/30/2010CN101286482B Pixel structure and transistor therein and method for making the same
06/29/2010US7747546 Information register using endohedral fullerenes in nanotube
06/29/2010US7746697 Nonvolatile semiconductor memory
06/29/2010US7746565 Optical lens, optical package having the same, backlight assembly having the same, display device having the same, and method thereof
06/29/2010US7746418 Mixture of metallic nanotube and semiconductive nanotube and a liquid crystalline organic compound having a charge transport function together; having molecules of the nanotube oriented
06/29/2010US7746417 Thin film transistor array panel for a display
06/29/2010US7746333 Semiconductor device
06/29/2010US7746311 Thin-film transistor circuit and a semiconductor display using the same
06/29/2010US7745993 Method for manufacturing light emitting device comprising reflective film
06/29/2010US7745943 Microelectonic packages and methods therefor
06/29/2010US7745941 Semiconductor device having shifted stacked chips
06/29/2010US7745938 Circuit device, a method for manufacturing a circuit device, and a semiconductor module
06/29/2010US7745933 Circuit structure and process thereof
06/29/2010US7745920 Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices
06/29/2010US7745912 Stress absorption layer and cylinder solder joint method and apparatus
06/29/2010US7745908 Semiconductor component containing compound of aluminum, gallium, indium, arsenic, and antimony has mesa structure whose sides have passivation layer of compound of aluminum, gallium, arsenic, and antimony
06/29/2010US7745907 Semiconductor package including connector disposed in troughhole
06/29/2010US7745905 Semiconductor device and a method of increasing a resistance value of an electric fuse
06/29/2010US7745904 Shallow trench isolation structure for semiconductor device
06/29/2010US7745902 System and method for providing improved trench isolation of semiconductor devices
06/29/2010US7745899 Photomask and its method of manufacture
06/29/2010US7745893 Magnetic transistor structure
06/29/2010US7745892 Integrated MEMS switch
06/29/2010US7745890 Hybrid metal fully silicided (FUSI) gate
06/29/2010US7745889 Metal oxide semiconductor transistor with Y shape metal gate
06/29/2010US7745888 Method of making p-channel and n-channel MIS transistors using single film formation of TaC
06/29/2010US7745887 Dual work function metal gate structure and related method of manufacture
06/29/2010US7745885 High voltage power MOSFET having low on-resistance
06/29/2010US7745883 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
06/29/2010US7745879 Method of fabricating high voltage fully depleted SOI transistor and structure thereof
06/29/2010US7745878 Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
06/29/2010US7745877 Semiconductor device and manufacturing method thereof
06/29/2010US7745875 Method for producing a vertical field effect transistor
06/29/2010US7745874 Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereof
06/29/2010US7745873 Ultra-thin body vertical tunneling transistor
06/29/2010US7745871 Fin field effect transistors including oxidation barrier layers
06/29/2010US7745870 Programming and erasing structure for a floating gate memory cell and method of making
06/29/2010US7745869 Thin film capacitance element composition, high permittivity insulation film, thin film capacitance element, thin film multilayer capacitor and production method of thin film capacitance element
06/29/2010US7745868 Semiconductor device and method of forming the same
06/29/2010US7745867 Integrated DRAM process/structure using contact pillars
06/29/2010US7745866 Semiconductor device and method for fabricating the same
06/29/2010US7745863 Flip FERAM cell and method to form same
06/29/2010US7745857 Semiconductor device and its manufacturing method
06/29/2010US7745856 Lipid nanotube or nanowire sensor
06/29/2010US7745854 Substrate for growing compound semiconductor and epitaxial growth method
06/29/2010US7745853 Multi-layer structure with a transparent gate
06/29/2010US7745852 Hetero junction field effect transistor and method of fabricating the same
06/29/2010US7745851 Polytype hetero-interface high electron mobility device and method of making
06/29/2010US7745850 Metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs); either of the buffer region and the main semiconductor region is adapted to provide a pn junction, either in the buffer region or between the buffer region and the main semiconductor region
06/29/2010US7745849 Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain
06/29/2010US7745845 Integrated low leakage schottky diode
06/29/2010US7745838 Glazing comprising electronics elements
06/29/2010US7745837 Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same
06/29/2010US7745836 High-power, broad-band, superluminescent diode and method of fabricating the same
06/29/2010US7745830 LCD with increased pixel opening sizes
06/29/2010US7745829 Semiconductor device and fabrication method thereof
06/29/2010US7745827 Memory device
06/29/2010US7745826 Thin film transistor substrate, electronic apparatus, and methods for fabricating the same
06/29/2010US7745825 Pixel structure and method for forming the same
06/29/2010US7745824 Semiconductor device and method of manufacturing the same
06/29/2010US7745822 Thin film transistor and thin film transistor substrate including a polycrystalline semiconductor thin film having a large heat capacity part and a small heat capacity part
06/29/2010US7745816 Single-photon detector with a quantum dot and a nano-injector
06/29/2010US7745815 Polarization-sensitive quantum well infrared photodetector focal plane array
06/29/2010US7745814 Polychromatic LED's and related semiconductor devices
06/29/2010US7745813 Nanostructures and methods for manufacturing the same
06/29/2010US7745811 Phase change memory devices and methods for fabricating the same
06/29/2010US7745809 Ultra high density phase change memory having improved emitter contacts, improved GST cell reliability and highly matched UHD GST cells using column mirco-trench strips