Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2010
06/10/2010US20100144074 Method of fabricating an array substrate for liquid crystal display device
06/10/2010US20100143744 Systems and Methods of Laser Texturing of Material Surfaces and their Applications
06/10/2010US20100142294 Vertical Transistor Memory Cell and Array
06/10/2010US20100142266 Vertical field-effect transistor
06/10/2010US20100142264 Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
06/10/2010US20100142259 Nanogaps: methods and devices containing same
06/10/2010US20100141888 Liquid crystal display and method for manufacturing the same
06/10/2010US20100141621 Semiconductor device
06/10/2010US20100141278 Particle detection sensor, method for manufacturing particle detection sensor, and method for detecting particle using particle detection sensor
06/10/2010US20100141229 Semiconductor Device
06/10/2010US20100140766 Large die package structures and fabrication method therefor
06/10/2010US20100140756 Apparatus for manufacturing silicon oxide thin film and method for forming the silicon oxide thin film
06/10/2010US20100140755 Rare-earth oxides, rare-earth nitrides, rare-earth phosphides and ternary alloys
06/10/2010US20100140754 Film-forming material, silicon-containing insulating film and method for forming the same
06/10/2010US20100140752 Semiconductor Device and Method of Forming Compliant Polymer Layer Between UBM and Conformal Dielectric Layer/RDL for Stress Relief
06/10/2010US20100140746 Improved process for preparing cleaned surfaces of strained silicon
06/10/2010US20100140745 Pulsed selective area lateral epitaxy for growth of iii-nitride materials over non-polar and semi-polar substrates
06/10/2010US20100140744 Methods of depositing electrically active doped crystalline si-containing films
06/10/2010US20100140743 Semiconductor device and method of manufacturing the same
06/10/2010US20100140742 Semiconductor Device and Method of Forming Thin Film Capacitor
06/10/2010US20100140741 Structure of capacitor set
06/10/2010US20100140739 Semiconductor Device and Fabricating Method Thereof
06/10/2010US20100140738 Semiconductor Device and Method of Forming Compact Coils for High Performance Filter
06/10/2010US20100140735 Nanostructures for dislocation blocking in group ii-vi semiconductor devices
06/10/2010US20100140734 Electronic Device and Method for Manufacturing Thereof
06/10/2010US20100140730 Semiconductor devices and systems
06/10/2010US20100140727 Magnetic thin film and method of manufacturing the same, and various application devices using the same
06/10/2010US20100140725 Pressure sensor
06/10/2010US20100140723 Nanotube and graphene semiconductor structures with varying electrical properties
06/10/2010US20100140722 Strained Semiconductor Device and Method of Making Same
06/10/2010US20100140714 Low loss substrate for integrated passive devices
06/10/2010US20100140713 Transistor-type protection device and semiconductor integrated circuit
06/10/2010US20100140709 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
06/10/2010US20100140707 Metal-Gated MOSFET Devices Having Scaled Gate Stack Thickness
06/10/2010US20100140706 Method of manufacturing thin film transistor and thin film transistor substrate
06/10/2010US20100140705 Dielectric structure having lower-k and higher-k materials
06/10/2010US20100140704 Lateral Double Diffused Metal Oxide Semiconductor Device And Method of Making The Same
06/10/2010US20100140703 Semiconductor Device and Method for Manufacturing the Same
06/10/2010US20100140702 Semiconductor device and manufacturing method thereof
06/10/2010US20100140701 Semiconductor Device and Method of Manufacturing the Same
06/10/2010US20100140700 Semiconductor device and method for manufacturing the same
06/10/2010US20100140699 Semiconductor device and method for manufacturing the same
06/10/2010US20100140698 Electronic device including a trench and a conductive structure therein and a process of forming the same
06/10/2010US20100140697 Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics
06/10/2010US20100140696 Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics
06/10/2010US20100140695 Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics
06/10/2010US20100140694 Semiconductor device having sub-surface trench charge compensation regions and method
06/10/2010US20100140693 Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates
06/10/2010US20100140692 Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby
06/10/2010US20100140691 Semiconductor device and manufacturing method of semiconductor device
06/10/2010US20100140690 Gate of trench type mosfet device and method for forming the gate
06/10/2010US20100140689 Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics
06/10/2010US20100140688 Semiconductor device and method of forming semiconductor device
06/10/2010US20100140687 High-Voltage MOS Devices Having Gates Extending into Recesses of Substrates
06/10/2010US20100140686 Flash memory and method of manufacturing a flash memory
06/10/2010US20100140684 Nonvolatile semiconductor memory device and method for manufacturing the same
06/10/2010US20100140683 Silicon nitride film and nonvolatile semiconductor memory device
06/10/2010US20100140682 Nonvolatile semiconductor memory device and method for manufacturing the same
06/10/2010US20100140681 Semiconductor device and method of manufacturing therefor
06/10/2010US20100140680 Double Polysilicon Process for Non-Volatile Memory
06/10/2010US20100140679 Stacked dual-gate nmos devices with antimony source-drain regions and methods for manufacturing thereof
06/10/2010US20100140678 Flash memory device and manufacruting method the same
06/10/2010US20100140676 Semiconductor devices including buried gate electrodes including bitline shoulder attack protection and methods of forming such semiconductor devices
06/10/2010US20100140674 Mosfet with multiple fully silicided gate and method for making the same
06/10/2010US20100140673 Printing shielded connections and circuits
06/10/2010US20100140672 Field effect transistor
06/10/2010US20100140671 Semiconductor device and method of manufacturing the semiconductor device
06/10/2010US20100140670 Integration of mems and cmos devices on a chip
06/10/2010US20100140669 Microfabrication methods for forming robust isolation and packaging
06/10/2010US20100140668 Shallow trench isolation regions in image sensors
06/10/2010US20100140665 Gallium Nitride Material Devices and Thermal Designs Thereof
06/10/2010US20100140664 Methods of Fabricating Nitride-Based Transistors with a Cap Layer and a Recessed Gate and Related Devices
06/10/2010US20100140663 CMOS Compatable fabrication of power GaN transistors on a <100> silicon substrate
06/10/2010US20100140660 Semiconductor Heterostructure Diodes
06/10/2010US20100140659 Electrostatic discharge protection device and related circuit
06/10/2010US20100140657 Power semiconductor device and the method of manufacturing the same
06/10/2010US20100140628 Insulated gate bipolar transistors including current suppressing layers
06/10/2010US20100140627 Package for Semiconductor Devices
06/10/2010US20100140622 Thin film transistor, fabricating method of thin film transistor and display device using the same
06/10/2010US20100140621 Light blocking member having variabe transmittance, display panel including the same, and manufacturing method thereof
06/10/2010US20100140620 Flat-panel display semiconductor process for efficient manufacturing
06/10/2010US20100140617 Semiconductor device manufacturing method and semiconductor device
06/10/2010US20100140614 Oxide semiconductor device and method of manufacturing the same and active matrix substrate
06/10/2010US20100140613 Semiconductor device
06/10/2010US20100140612 Manufacturing method of thin film transistor using oxide semiconductor
06/10/2010US20100140611 Amorphous oxide and field effect transistor
06/10/2010US20100140610 Thin film transistor array panel and method for manufacturing the same
06/10/2010US20100140609 Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
06/10/2010US20100140608 Transistor and method of manufacturing the same
06/10/2010US20100140595 Organic light emitting display device
06/10/2010US20100140594 Organic optoelectronic component
06/10/2010US20100140590 Transistor comprising carbon nanotubes functionalized with a non-fluoro containing electron deficient olefin or alkyne
06/10/2010US20100140589 Ferroelectric tunnel fet switch and memory
06/10/2010US20100140588 Catalyst support substrate, method for growing carbon nanotubes using the same, and transistor using carbon nanotubes
06/10/2010US20100140587 High-Injection Heterojunction Bipolar Transistor
06/10/2010US20100140586 Quantum dots having composition gradient shell structure and manufacturing method thereof
06/10/2010US20100140584 Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
06/10/2010US20100140457 Semiconductor apparatus, solid state image pickup device using the same, and method of manufacturing them
06/10/2010US20100139389 Sensor, sensor temperature control method and abnormality recovery method
06/10/2010DE112007003519T5 Halbleiterbauelement Semiconductor device
1 ... 693 694 695 696 697 698 699 700 701 702 703 704 705 706 707 708 709 710 711 712 713 ... 2182