Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2011
01/27/2011US20110018078 Manufacturing method for a micromechanical component having a thin-layer capping
01/27/2011US20110018077 Semiconductor pressure sensor and its manufacturing method
01/27/2011US20110018076 MEMS Component, Method for Producing a MEMS Component, and Method for Handling a MEMS Component
01/27/2011US20110018075 Structure and fabrication method of a sensing device
01/27/2011US20110018074 Semiconductor device, an electronic device and an electronic apparatus
01/27/2011US20110018073 Substrate device having a tuned work function and methods of forming thereof
01/27/2011US20110018072 Metal gate transistor and method for fabricating the same
01/27/2011US20110018071 High-voltage metal oxide semiconductor device and fabrication method thereof
01/27/2011US20110018065 Method for manufacturing semiconductor device and semiconductor device
01/27/2011US20110018064 Sram cell comprising finfets
01/27/2011US20110018063 Apparatus and methods for improving multi-gate device performance
01/27/2011US20110018062 Fabrication of single or multiple gate field plates
01/27/2011US20110018061 Composition for organic dielectric and organic thin film transistor formed using the same
01/27/2011US20110018060 Method and structures for improving substrate loss and linearity in soi substrates
01/27/2011US20110018059 Shield Contacts in a Shielded Gate MOSFET
01/27/2011US20110018058 High-voltage vertical transistor with edge termination structure
01/27/2011US20110018057 Semiconductor memory device and method for fabricating the same
01/27/2011US20110018055 Power semiconductor device and method for manufacturing same
01/27/2011US20110018054 Method for Preventing Gate Oxide Damage of a Trench MOSFET during Wafer Processing while Adding an ESD Protection Module Atop
01/27/2011US20110018053 Memory cell and methods of manufacturing thereof
01/27/2011US20110018052 Nonvolatile semiconductor memory device and method for manufacturing same
01/27/2011US20110018050 Nonvolatile semiconductor memory device and method for manufacturing same
01/27/2011US20110018049 Charge trapping device and method for manufacturing the same
01/27/2011US20110018048 Semiconductor device and method of manufacturing the same
01/27/2011US20110018047 Nonvolatile semiconductor memory device and method of manufacturing the same
01/27/2011US20110018046 Method of manufacture of contact plug and interconnection layer of semiconductor device
01/27/2011US20110018044 Etch stop layers and methods of forming the same
01/27/2011US20110018040 Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions
01/27/2011US20110018039 Lithography for printing constant line width features
01/27/2011US20110018038 Ion sensitive field effect transistor and production method thereof
01/27/2011US20110018034 Heterogeneous integration of low noise amplifiers with power amplifiers or switches
01/27/2011US20110018033 Semiconductor wafer, semiconductor device, and method of manufacturing a semiconductor device
01/27/2011US20110018032 Semiconductor device and manufacturing method of the same
01/27/2011US20110018031 Transistor gate electrode having conductor material layer
01/27/2011US20110018030 Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device
01/27/2011US20110018029 Semiconductor device having a floating semiconductor zone
01/27/2011US20110018028 Semiconductor device
01/27/2011US20110018005 Semiconductor device and manufacturing method thereof
01/27/2011US20110018004 Semiconductor device with large blocking voltage and manufacturing method thereof
01/27/2011US20110018003 Group iii nitride semiconductor substrate and manufacturing method thereof
01/27/2011US20110018002 Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
01/27/2011US20110017998 Semiconductor device
01/27/2011US20110017997 Diffusion Barrier Coated Substrates and Methods of Making the Same
01/27/2011US20110017996 Light-emitting device
01/27/2011US20110017995 Semiconductor device and method for manufacturing the same
01/27/2011US20110017993 Tft substrate and method of manufacturing the same
01/27/2011US20110017992 Thin film transistor
01/27/2011US20110017991 Semiconductor device
01/27/2011US20110017990 Thin-film transistor and method of manufacturing the same
01/27/2011US20110017979 High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes
01/27/2011US20110017977 Memristors with insulation elements and methods for fabricating the same
01/27/2011US20110017973 Nanodevice, Transistor Comprising the Nanodevice, Method for Manufacturing the Nanodevice, and Method for Manufacturing the Transistor
01/27/2011US20110017971 Integrated circuit devices including low-resistivity conductive patterns in recessed regions
01/27/2011US20110017286 Composite nanorods with distinct regions
01/27/2011US20110017284 Geometric diode, applications and method
01/27/2011DE112008002817T5 Verfahren zum Herstellen eines elektronischen Bauelements A method for fabricating an electronic device
01/27/2011DE112004000060B4 Schaltelemente Switching elements
01/27/2011DE10393852B4 Verfahren zur Herstellung eines Leistungs-MOSFETs als Trench MOSFET mit implantiertem Drain-Drift-Bereich Process for the preparation of a power MOSFET as a trench MOSFET with implanted drain-drift region
01/27/2011DE102010030179A1 Halbleiterbauelement mit einer amorphen Kanalsteuerschicht A semiconductor device with an amorphous layer control channel
01/27/2011DE102010030085A1 Fahrzeug-Leistungselektronik mit Leistungstransistoren mit breiter Bandlücke A vehicle power electronics with power transistors wide bandgap
01/27/2011DE102009034777A1 Verfahren zu Herstellung und Ansteuerung eines regelbaren Widerstandsbauelement und dessen Verwendung Process for the preparation and control of a variable resistance device and its use
01/27/2011DE10165053B4 Verfahren zur Herstellung eines Halbleiterbauelements mit hoher Durchbruchsspannung A process for producing a semiconductor device with high breakdown voltage
01/26/2011EP2278620A1 Integrated circuit, memory cell, memory module, and method of manufacturing an integrated circuit
01/26/2011EP2278317A1 Field effect transistor device for ultra-fast nucleic acid sequencing
01/26/2011EP2277696A2 Vacinal gallium nitride substrate for high quality homoepitaxy
01/26/2011EP2277202A1 Memory devices using proton-conducting polymeric materials
01/26/2011EP2277195A2 Methods of making lateral junction field effect transistors using selective epitaxial growth
01/26/2011EP2277193A1 Gate structure for field effect transistor
01/26/2011EP2277176A1 Apparatus, method and system for reconfigurable circuitry
01/26/2011EP2035584B1 Nanosensors and related technologies
01/26/2011CN201725798U IGBT device with dielectric trapping layer
01/26/2011CN201725797U IGBT with improved collector electrode structure
01/26/2011CN201725794U Groove type schottky barrier diode rectifying device
01/26/2011CN201725793U Automobile rectifier bridge
01/26/2011CN201725786U Panel reverse ceramic outer casing
01/26/2011CN1941283B Semiconductor device fabrication method
01/26/2011CN1826696B Varying carrier mobility in semiconductor devices to achieve overall design goals
01/26/2011CN1630095B Semiconductor devices and methods of fabricating the same
01/26/2011CN1605918B Thin film transistor array substrate and method of fabricating the same
01/26/2011CN101960607A Semiconductor device, method for manufacturing semiconductor device, and display device
01/26/2011CN101960606A Silicon carbide semiconductor device and manufacturing method thereof
01/26/2011CN101960605A Semiconductor substrate, semiconductor device and semiconductor device manufacturing method
01/26/2011CN101960604A Substrate having a charged zone in an insulating buried layer
01/26/2011CN101960603A High-performance heterostructure light emitting devices and methods
01/26/2011CN101960584A Semiconductor device and method of manufacture thereof
01/26/2011CN101960576A Semiconductor device and method for manufacturing said device
01/26/2011CN101960575A Semiconductor device and manufacturing method therefor
01/26/2011CN101960574A LDMOS devices with improved architectures
01/26/2011CN101960573A Silicon-germanium-carbon semiconductor structure
01/26/2011CN101960572A Devices with cavity-defined gates and methods of making the same
01/26/2011CN101960571A Method of treating semiconductor element
01/26/2011CN101960570A Method for manufacturing semiconductor device and semiconductor device
01/26/2011CN101960563A Microcrystalline silicon thin film transistor
01/26/2011CN101960535A Transparent thin-film electrode
01/26/2011CN101960276A Pressure sensor and method for manufacturing the same
01/26/2011CN101960275A Three-dimensional structure and method of manufacturing the same
01/26/2011CN101959795A Thin film of metal silicon compound and process for producing the thin film of metal silicon compound
01/26/2011CN101958346A Lateral double-diffused metal-oxide semiconductor field effect transistor and manufacturing method thereof
01/26/2011CN101958345A Compound semiconductor device and method for manufacturing the same
01/26/2011CN101958344A Green field effect transistor and manufacturing method thereof