Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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02/03/2011 | US20110024798 Semiconductor device and method for manufacturing same |
02/03/2011 | US20110024797 Nitride-based semiconductor device with concave gate region |
02/03/2011 | US20110024796 Epitaxial substrate for semiconductor device, semiconductor device, and process for producing epitaxial substrate for semiconductor device |
02/03/2011 | US20110024795 Epitaxial substrate for semiconductor device, semiconductor device, and process for producing epitaxial substrate for semiconductor device |
02/03/2011 | US20110024794 Fin structure for high mobility multiple-gate transistor |
02/03/2011 | US20110024791 Bipolar semiconductor device and manufacturing method |
02/03/2011 | US20110024775 Methods for and devices made using multiple stage growths |
02/03/2011 | US20110024769 Semiconductor device and method for fabricating the same |
02/03/2011 | US20110024767 Semiconductor Substrates, Devices and Associated Methods |
02/03/2011 | US20110024766 One hundred millimeter single crystal silicon carbide wafer |
02/03/2011 | US20110024765 Silicon carbide semiconductor structures, devices and methods for making the same |
02/03/2011 | US20110024764 Semiconductor device, method for producing the same, and display device |
02/03/2011 | US20110024762 Method of Forming a Thin Film Transistor |
02/03/2011 | US20110024759 Thin film transistor substrate and method for forming metal wire thereof |
02/03/2011 | US20110024757 Semiconductor Device and Fabrication Method Thereof |
02/03/2011 | US20110024755 Thin film transistor substrate and thin film transistor used for the same |
02/03/2011 | US20110024752 Thin film transistor, method of fabricating the same, and display apparatus having the same |
02/03/2011 | US20110024751 Semiconductor device and manufacturing method thereof |
02/03/2011 | US20110024750 Semiconductor device and method for manufacturing the same |
02/03/2011 | US20110024747 Methods for improving the quality of group iii-nitride materials and structures produced by the methods |
02/03/2011 | US20110024742 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL, SELF-SUPPORTING ZnO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL FOR USE IN THE SAME |
02/03/2011 | US20110024741 Integrated circuits utilizing amorphous oxides |
02/03/2011 | US20110024740 Semiconductor device and manufacturing method thereof |
02/03/2011 | US20110024723 Nanoparticle synthesis |
02/03/2011 | US20110024719 Large scale nanoelement assembly method for making nanoscale circuit interconnects and diodes |
02/03/2011 | US20110024718 Nanowire Synthesis |
02/03/2011 | US20110024717 Method for preferential growth of semiconducting vertically aligned single walled carbon nanotubes |
02/03/2011 | US20110024650 Terahertz emitter with high power and temperature operation |
02/03/2011 | US20110024605 Imaging apparatus and device |
02/03/2011 | US20110024406 Laser irradiation method and laser irradiation apparatus |
02/03/2011 | US20110023632 Sub-threshold elastic deflection fet sensor for sensing pressure/force, a method and system thereof |
02/03/2011 | DE19964499B4 Ohmscher Kontakt zu Halbleitervorrichtungen und ein Verfahren zum Herstellen desselben Of the same ohmic contact to the semiconductor devices and a method for producing |
02/03/2011 | DE19905517B4 Mehrschichtige Indium-enthaltende Nitridpufferschicht für die Nitrid-Epitaxie Multi-layered indium-containing nitride buffer layer for the nitride epitaxy |
02/03/2011 | DE102010036501A1 Halbleitervorrichtung mit einer potenzialfreien Halbleiterzone Semiconductor device having a floating semiconductor region |
02/03/2011 | DE102007058355B4 Flash-Speicher Flash memory |
02/03/2011 | DE102006043192B4 Sensorvorrichtung Sensor device |
02/03/2011 | DE102006040765B4 Verfahren zur Herstellung eines Feldeffekttransistors mit einer verspannten Kontaktätzstoppschicht mit geringerer Konformität und Feldeffekttransistor A process for producing a field effect transistor with a strained contact etch with reduced compliance and field effect transistor |
02/02/2011 | EP2280418A1 MOS-gated device having a buried gate and process for forming same |
02/02/2011 | EP2280417A1 Semiconductor device and method for manufacturing the same |
02/02/2011 | EP2280416A1 Semiconductor device |
02/02/2011 | EP2280412A2 Semiconductor substrate comprising at least a buried insulating cavity |
02/02/2011 | EP2280389A1 Transistor circuit for a display panel and electronic apparatus |
02/02/2011 | EP2279525A2 Power field effect transistor |
02/02/2011 | EP2279520A2 Method for making complementary p and n mosfet transistors, electronic device including such transistors, and processor including at least one such device |
02/02/2011 | EP1935023B1 Semiconductor device with a bipolar transistor and method of manufacturing such a device |
02/02/2011 | EP1905089B1 Semiconductor device and a method for production thereof |
02/02/2011 | CN201732791U Transverse diffusion metallic oxide semiconductor structure |
02/02/2011 | CN201732788U Semiconductor element comprising bipolar transistor and thin capacitor |
02/02/2011 | CN1819238B Image sensor pixel having a transfer gate formed from Pp+ or N+ doped polysilicon |
02/02/2011 | CN1790749B Organic thin-film transistor, method of fabricating the same, and flat panel display having the same |
02/02/2011 | CN1757119B Group III nitride based flip-chip integrated circuit and method for fabricating |
02/02/2011 | CN1637531B Trans-reflective type liquid crystal display device and method for fabricating the same |
02/02/2011 | CN101965638A Nonvolatile random access memory |
02/02/2011 | CN101964381A P-n transparent homojunction diode and preparation method thereof |
02/02/2011 | CN101964365A BiCMOS semiconductor junction type variable capacitor and manufacturing method thereof |
02/02/2011 | CN101964364A Transistor device and manufacturing method thereof |
02/02/2011 | CN101964363A Metal-semiconductor field effect transistor with stepped buffer layer structure |
02/02/2011 | CN101964362A 半导体装置 Semiconductor device |
02/02/2011 | CN101964361A Metal oxide semiconductor transistor and manufacturing method thereof |
02/02/2011 | CN101964360A Ion sensitive field effect transistor and production method thereof |
02/02/2011 | CN101964359A Bipolar transistor, forming method thereof and virtual ground circuit |
02/02/2011 | CN101964358A Air tunnel floating gate memory cell and method for making the same |
02/02/2011 | CN101964357A Semiconductor device and manufacturing method thereof |
02/02/2011 | CN101964356A Semiconductor device and manufacturing method thereof |
02/02/2011 | CN101964355A Power device with a self-aligned suicide and a method for fabricating the device |
02/02/2011 | CN101964346A Bipolar transistor, forming method of bipolar transistor and band-gap reference circuit |
02/02/2011 | CN101964344A Panel display driving chip based on silicon on insulator (SOI) and preparation method thereof |
02/02/2011 | CN101964343A 半导体装置 Semiconductor device |
02/02/2011 | CN101964332A Chip scale surface mounted semiconductor device package and process of manufacture |
02/02/2011 | CN101964327A Metal oxide semiconductor transistor structure and fabrication method thereof |
02/02/2011 | CN101964324A Active matrix substrate and display device |
02/02/2011 | CN101962289A Ceramic powder composition and base plate of photovoltaic device using same |
02/02/2011 | CN101673739B Semiconductor device and method of manufacturing the same |
02/02/2011 | CN101582446B Thin film transistor |
02/02/2011 | CN101556970B MOS capacitor capable of reducing plasma damage effect |
02/02/2011 | CN101383187B Non-volatile semiconductor memory device and method for controlling the same |
02/02/2011 | CN101252147B High voltage device |
02/02/2011 | CN101159289B Silicon on insulator FETs and its method |
02/01/2011 | USRE42097 Method of fabricating a semiconductor device |
02/01/2011 | USRE42083 Acceleration sensor and process for the production thereof |
02/01/2011 | US7881679 Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver |
02/01/2011 | US7881093 Programmable precision resistor and method of programming the same |
02/01/2011 | US7881020 Extraordinary magnetoresistive (EMR) device with novel lead structure |
02/01/2011 | US7880851 Array substrate for a liquid crystal display device with thin film transistor having two drain electrode patterns and manufacturing method of the same |
02/01/2011 | US7880791 CMOS APS with stacked avalanche multiplication layer and low voltage readout electronics |
02/01/2011 | US7880380 Display device and electronic apparatus |
02/01/2011 | US7880367 MEMS sensor |
02/01/2011 | US7880318 Sensing system and method of making the same |
02/01/2011 | US7880312 Semiconductor memory device |
02/01/2011 | US7880308 Semiconductor device |
02/01/2011 | US7880307 Semiconductor device including through-wafer interconnect structure |
02/01/2011 | US7880305 Technology for fabrication of packaging interface substrate wafers with fully metallized vias through the substrate wafer |
02/01/2011 | US7880284 Embedded power gating |
02/01/2011 | US7880271 Semiconductor device with emitter contact holes in a first layer not overlaid by emitter through holes in a second layer |
02/01/2011 | US7880270 Vertical bipolar transistor |
02/01/2011 | US7880269 Integrated circuit including a capacitor and method |
02/01/2011 | US7880266 Four-terminal antifuse structure having integrated heating elements for a programmable circuit |
02/01/2011 | US7880263 Method and resulting structure DRAM cell with selected inverse narrow width effect |
02/01/2011 | US7880259 Solid-state image sensor |
02/01/2011 | US7880256 Semiconductor device with passivation layer covering wiring layer |