Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2012
04/11/2012EP2439802A1 Organic thin film transistor, surface light source and display device
04/11/2012EP2439777A1 Tunnel field effect transistor
04/11/2012EP2438629A2 Formulations for improved electrodes for electronic devices
04/11/2012EP2438619A1 Apparatus and method to fabricate an electronic device
04/11/2012EP2438618A1 Power switching devices having controllable surge current capabilities
04/11/2012EP2438617A1 Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
04/11/2012CN202189796U 片式肖特基二极管 Chip Schottky diode
04/11/2012CN202189795U Rectifier diode for automobile
04/11/2012CN202189794U 稳压二极管 Zener diode
04/11/2012CN202189793U 一种整流二极管 One kind of rectifier diodes
04/11/2012CN202189792U 低栅电容的绝缘栅双极型晶体管 Low gate capacitance of an insulated gate bipolar transistor
04/11/2012CN202189791U 带悬浮发射区的功率晶体管 Power transistors with suspended emitting region
04/11/2012CN202189790U 一种单向晶闸管芯片的门极结构 Gate structure of a one-way thyristor chips
04/11/2012CN202189789U 一种肖特基二极管 One kind of Schottky diodes
04/11/2012CN202189774U 特大功率晶闸管封装结构 King Power Transistor package structure
04/11/2012CN202189098U 一种集成化电场微传感器 An integrated electric micro-sensor
04/11/2012CN102414825A Power semiconductor device
04/11/2012CN102414824A Ald系统和方法 Ald system and method
04/11/2012CN102414818A Semiconductor element, semiconductor device, and power converter
04/11/2012CN102414817A 具备具有二极管区和igbt区的半导体基板的半导体装置 A semiconductor device having the diode region and the semiconductor substrate region igbt
04/11/2012CN102414805A 二极管的制造方法以及二极管 The method of manufacturing a diode and a diode
04/11/2012CN102414803A Selective plasma nitriding method and plasma nitriding device
04/11/2012CN102414789A 半导体基板的制造方法及半导体基板 The method of manufacturing a semiconductor substrate and a semiconductor substrate
04/11/2012CN102412313A 一种采用SiGe HBT工艺的MOS可变电容及其制作方法 One kind of using SiGe HBT process MOS variable capacitor and its manufacturing method
04/11/2012CN102412312A 一种mos晶体管电容 One kind of mos transistor capacitance
04/11/2012CN102412311A PN junction variodenser in BiCMOS (bipolar complementary metal oxide semiconductor) process and manufacturing method thereof
04/11/2012CN102412310A 一种提高电容密度的多层堆叠结构及其制造方法 A capacitance density multilayer stack to improve the structure and manufacturing method
04/11/2012CN102412309A Switching device and memory device including the same
04/11/2012CN102412308A BiCMOS工艺中的寄生PIN器件及制造方法 BiCMOS processes in the device and method of manufacturing the parasitic PIN
04/11/2012CN102412307A 垂直的齐纳二极管结构及其制备方法 Vertical Zener diode structure and preparation method
04/11/2012CN102412306A Trench gate JFET and manufacture method thereof
04/11/2012CN102412305A Power-insulated-gate field-effect transistor
04/11/2012CN102412304A 一种抗总剂量辐射效应的倒比例或小比例nmos管版图结构 An inverted proportion of the total dose radiation effects, or small-scale anti-nmos pipe layout structure
04/11/2012CN102412303A 一种抗总剂量辐射效应的大头条形栅mos管版图加固结构 An anti-total dose radiation effects bulk strip layout gate mos tube reinforcement structure
04/11/2012CN102412302A Tunneling field-effect transistor for inhibiting bipolar effect and preparation method thereof
04/11/2012CN102412301A Nano-wire tunneling field-effect transistor with vertical structure and preparation method thereof
04/11/2012CN102412300A 碳化硅半导体器件 Silicon carbide semiconductor device
04/11/2012CN102412299A 半导体装置及其制造方法 Semiconductor device and manufacturing method
04/11/2012CN102412298A 半导体元件及该半导体元件的制造方法 The method of manufacturing a semiconductor element and a semiconductor element
04/11/2012CN102412297A 基于衬底偏压技术的硅基功率器件结构 Based on the structure of the silicon substrate bias power device technology
04/11/2012CN102412296A 超级结半导体器件结构及其制作方法 Super-junction semiconductor device structures and fabrication method thereof
04/11/2012CN102412295A Semiconductor device and method for manufacturing same
04/11/2012CN102412294A Device used as electric static protection structure
04/11/2012CN102412293A 5V PMOS (P-channel Metal Oxide Semiconductor) device in SONOS (Silicon Oxide Nitride Oxide Semiconductor) technique and fabrication method thereof
04/11/2012CN102412292A 半导体装置 Semiconductor device
04/11/2012CN102412291A 锗硅BiCMOS工艺中的可变电容及制造方法 SiGe BiCMOS process variable capacitor and method of manufacture
04/11/2012CN102412290A 半导体装置 Semiconductor device
04/11/2012CN102412289A Semiconductor device
04/11/2012CN102412288A 逆导型绝缘栅双极晶体管 Reverse conduction type insulated gate bipolar transistor
04/11/2012CN102412287A Silicon-germanium HBT (heterojunction bipolar transistor) device and fabrication method thereof
04/11/2012CN102412286A 一种高速锗硅hbt器件结构及其制造方法 A high speed SiGe hbt device structure and its manufacturing method
04/11/2012CN102412285A 一种锗硅异质结三极管器件结构及其制造方法 One kind of silicon-germanium heterojunction transistor device structure and manufacturing method thereof
04/11/2012CN102412284A 锗硅hbt工艺中垂直寄生型pnp三极管及其制造方法 SiGe hbt process parasitic vertical pnp type transistor and manufacturing method thereof
04/11/2012CN102412283A Silicon-germanium HBT (heterojunction bipolar transistor) device and fabrication method thereof
04/11/2012CN102412282A 锗硅异质结双极型晶体管的基区结构 SiGe base region of a heterojunction bipolar transistor structure
04/11/2012CN102412281A 锗硅异质结双极晶体管 SiGe heterojunction bipolar transistor
04/11/2012CN102412280A Lateral parasitic PNP device in silicon-germanium HBT (heterojunction bipolar transistor) technique
04/11/2012CN102412279A 锗硅bicmos工艺中垂直寄生型pnp三极管及制造方法 SiGe bicmos process parasitic vertical pnp type transistor and method of manufacture
04/11/2012CN102412278A 锗硅BiCMOS工艺中垂直型PNP三极管及制造方法 SiGe BiCMOS process, vertical PNP transistor and method of manufacture
04/11/2012CN102412277A VPNP device structure used in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process and manufacturing method thereof
04/11/2012CN102412276A Transistor and method of manufacturing transistor
04/11/2012CN102412275A Vertical PNP device in SiGe BiCMOS technology and manufacturing method thereof
04/11/2012CN102412274A Vertically parasitic PNP device in germanium-silicon HBT (heterojunction bipolar transistor) process and fabrication method thereof
04/11/2012CN102412273A Semiconductor device and method for manufacturing same
04/11/2012CN102412272A Vertical parasitic type PNP device in BiCMOS technology
04/11/2012CN102412271A 外延片衬底、外延片及半导体器件 Epitaxial substrates, epitaxial wafers and semiconductor devices
04/11/2012CN102412270A Igbt结构及其制备方法 Igbt structure and preparation method
04/11/2012CN102412269A 一种cmos侧墙结构及其制备方法 One kind of sidewall structure and preparation method cmos
04/11/2012CN102412268A 平面型单向触发二极管芯片及其制造方法 Planar type one-way trigger diode chip and its manufacturing method
04/11/2012CN102412267A 在高压晶体管结构的端处的栅极回拉 At the gate end of the high-voltage transistor structure pullback
04/11/2012CN102412266A 提高soa能力的功率器件结构及其制造方法 Ability to improve soa power device structure and manufacturing method
04/11/2012CN102412265A Method for preventing semiconductor layer mix and laminated structure
04/11/2012CN102412264A A method for producing a structure element and a semiconductor component comprising the structure element
04/11/2012CN102412263A 具有金属前介质填充结构的半导体器件及其制备方法 A semiconductor device and a method for preparing metallic structure filled before the media
04/11/2012CN102412262A 功率用半导体器件 The power semiconductor devices
04/11/2012CN102412261A 半导体装置 Semiconductor device
04/11/2012CN102412260A 超级结半导体器件的终端保护结构及制作方法 Super Junction terminal protection structure and method of making a semiconductor device
04/11/2012CN102412259A 具有受应力区域的半导体本体 A semiconductor body region affected by stress
04/11/2012CN102412252A 一种局部化混合晶向应变硅cmos结构及其制备方法 A method of localized strain silicon cmos mixed crystal structure and preparation method
04/11/2012CN102412249A 降低闩锁效应的功率器件结构及其制造方法 Reduce power device structure and manufacturing method latchup
04/11/2012CN102412248A Esd保护的功率mosfet或igbt及制备方法 Esd protected power mosfet or igbt and preparation methods
04/11/2012CN102412204A 单晶体管dram及其制备方法 Single-transistor dram its preparation method
04/11/2012CN102412202A 一种具有自对准空洞层的son互补型金属氧化物半导体制备方法 Son having complementary self-aligned layer of metal oxide semiconductor cavity preparation
04/11/2012CN102412180A 一种soi衬底和具有soi衬底的半导体器件及其形成方法 One kind of soi soi substrate and a semiconductor device having a substrate and method of forming
04/11/2012CN102412165A 集成电路钝化层的制造方法及结构 The method of manufacturing an integrated circuit and a passivation layer structure of
04/11/2012CN102412161A 一种提高共源极运算放大器频率特性的方法 A total of pole improve the frequency characteristics of the operational amplifier method source
04/11/2012CN102412160A 一种提高共源极运算放大器频率特性的方法 A total of pole improve the frequency characteristics of the operational amplifier method source
04/11/2012CN102412155A 隔离型ldmos的制造方法 Manufacturing method of isolated ldmos
04/11/2012CN102412132A 电子可擦除式只读存储器单元 Electronic erasable read-only memory unit
04/11/2012CN102412131A Dielectric stack
04/11/2012CN102412130A 利用栅多晶硅提高晶体管载流子迁移率的方法 Using the gate polysilicon improve the carrier mobility of the transistor Method
04/11/2012CN101950723B 实现源体欧姆接触且基于soi的mos器件制作方法 Realization of the source body ohmic contact and soi's mos device fabrication method based on
04/11/2012CN101777585B 结型场效应晶体管及其制造方法 Junction field-effect transistor and manufacturing method thereof
04/11/2012CN101771046B 具有倒t形鳍片多重栅晶体管的集成电路结构及形成方法 An inverted t-shaped fin multiple integrated circuit structure and method for forming a gate transistor
04/11/2012CN101764154B 金属栅晶体管及其形成方法 Metal gate transistor and method of forming
04/11/2012CN101752363B 电容器结构 Capacitor structure
04/11/2012CN101687992B 二胺化合物和聚酰胺酸 Diamine compounds and polyamide acid
04/10/2012US8154915 Magnetoresistive element and magnetoresistive random access memory including the same
04/10/2012US8154135 Stacked semiconductor package
04/10/2012US8154134 Packaged electronic devices with face-up die having TSV connection to leads and die pad