Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2012
09/13/2012US20120228672 Method for forming a ge on iii/v-on-insulator structure
09/13/2012US20120228671 Strained ge-on-insulator structure and method for forming the same
09/13/2012US20120228643 Light emitting apparatus and method for manufacturing the same
09/13/2012US20120228640 Semiconductor device and method for manufacturing same
09/13/2012US20120228639 Self aligned device with enhanced stress and methods of manufacture
09/13/2012US20120228638 Methods of Fabricating Silicon Carbide Devices Having Smooth Channels and Related Devices
09/13/2012US20120228637 Semiconductor device and method of manufacturing the same
09/13/2012US20120228636 Schottky barrier diode
09/13/2012US20120228635 Semiconductor rectifier device
09/13/2012US20120228634 Combined semiconductor device
09/13/2012US20120228633 Semiconductor device
09/13/2012US20120228632 Semiconductor device
09/13/2012US20120228631 Semiconductor device and method of manufacturing the same
09/13/2012US20120228630 Semiconductor device and method for fabricating the same
09/13/2012US20120228629 Thyristors, Methods of Programming Thyristors, and Methods of Forming Thyristors
09/13/2012US20120228628 Semiconductor device and method of fabricating the same
09/13/2012US20120228627 Method for producing compound semiconductor crystal, method for producing electronic device, and semiconductor wafer
09/13/2012US20120228626 Semiconductor device and its fabrication method
09/13/2012US20120228625 Nitride semiconductor device
09/13/2012US20120228623 Display device and electronic device
09/13/2012US20120228622 Light emitting device, method for manufacturing thereof and electronic appliance
09/13/2012US20120228621 Method for manufacturing semiconductor device, semiconductor device, and display device
09/13/2012US20120228619 Display panel and method for manufacturing the same
09/13/2012US20120228616 Thin film transistor compositions, and methods relating thereto
09/13/2012US20120228615 Semiconductor device
09/13/2012US20120228614 Semiconductor device and manufacturing method thereof
09/13/2012US20120228613 Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method
09/13/2012US20120228612 Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
09/13/2012US20120228611 Bipolar junction transistor with a self-aligned emitter and base
09/13/2012US20120228608 Sputtering target and thin film transistor equipped with same
09/13/2012US20120228606 Semiconductor device and manufacturing method thereof
09/13/2012US20120228605 Semiconductor device and method for manufacturing the same
09/13/2012US20120228604 Thin film transistor array panel and manufacturing method thereof
09/13/2012US20120228573 Memory Cell Constructions, and Methods for Fabricating Memory Cell Constructions
09/13/2012DE112010004534T5 Transistor mit body-kontakt und verringerter parasitärer kapazität Transistor with body-contact and reduced parasitic capacitance
09/13/2012DE112009003565T5 Grabenbasierte leistungshalbleitervorrichtungen mit eigenschaften einer erhöhten durchbruchspannung Grave-based power semiconductor devices with properties increased by breakdown voltage
09/13/2012DE102012201080A1 Leistungsmodul Power module
09/13/2012DE102011089452A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
09/13/2012DE102011013375A1 Manufacture of ohmic contact on silicon carbide substrate used in e.g. electronic component, involves thermally treating silicon carbide substrate in non-oxidizing atmosphere, and applying conductive contact material on treated substrate
09/13/2012DE102009025799B4 Verfahren zur Herstellung eines Dünnschichttransistors (TFT) durch Ausnutzung der Unterschiede von Materialien in dem Schwellenwert des Lichtflusses des Lasers A process for producing a thin film transistor (TFT) by making use of differences in materials of the threshold value of the luminous flux of the laser
09/13/2012DE102006015112B4 Halbleitervorrichtung und elektrisches Leistungshalbleiterprodukt Semiconductor device and electric power semiconductor product
09/12/2012EP2498295A1 Method for forming a Ge on III/V-On-Insulator structure
09/12/2012EP2498294A1 Device for controlling electrical conduction across a semiconductor body
09/12/2012EP2498293A1 Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
09/12/2012EP2498292A2 Schottky barrier diode
09/12/2012EP2498282A1 Epitaxially laminated iii-nitride substrate
09/12/2012EP2498281A2 Methods for fabricating transistors including circular trenches
09/12/2012EP2498280A1 DRAM with trench capacitors and logic back-biased transistors integrated on an SOI substrate comprising an intrinsic semiconductor layer and manufacturing method thereof
09/12/2012EP2498279A1 Method for treating an oxidized metal nitride layer
09/12/2012EP2498242A1 Electro-optical device and electronic apparatus
09/12/2012EP2498075A2 Semiconductor device, strain gauge, pressure sensor, and method of forming semiconductor device
09/12/2012EP2497117A1 Junction field effect transistor and method of manufacturing the same
09/12/2012EP2497116A1 Power semiconductor devices having selectively doped jfet regions and related methods of forming such devices
09/12/2012EP2497115A1 Semiconductor device and manufacturing method thereof
09/12/2012EP2497114A2 Semiconductor device
09/12/2012EP2497113A1 Bipolar transistor
09/12/2012EP2497112A2 Electrostatic protection device and method of manufacturing the same
09/12/2012EP2497109A2 Package configurations for low emi circuits
09/12/2012EP2497108A1 Junction field effect transistor
09/12/2012EP2497107A1 Mask level reduction for mofet
09/12/2012EP2497105A1 Systems and methods for non-periodic pulse partial melt film processing
09/12/2012CN202434528U Non-volatile memory with P+ single polycrystalline structure
09/12/2012CN202434527U Super-junction metal-oxide-semiconductor field-effect transistor (MOSFET) structure
09/12/2012CN202434526U High-voltage transverse diffusion metal-oxide semiconductor structure
09/12/2012CN202434525U N-type silicon-on-insulator lateral insulated gate bipolar device
09/12/2012CN202434524U Diode with field plate and field limiting ring
09/12/2012CN202434523U Device for improving PN junction reverse breakdown voltage
09/12/2012CN202434522U Terminator region groove structure for schottky diode
09/12/2012CN102668377A Non-volatile latch circuit and logic circuit, and semiconductor device using the same
09/12/2012CN102668348A Converter
09/12/2012CN102668099A Flexible semiconductor device, manufacturing method for same, and image display device
09/12/2012CN102668098A Method for manufacturing semiconductor device
09/12/2012CN102668097A Semiconductor device
09/12/2012CN102668096A Semiconductor device and method for manufacturing the same
09/12/2012CN102668095A 晶体管 Transistor
09/12/2012CN102668094A Semiconductor element and semiconductor device
09/12/2012CN102668093A Wrap-around contacts for finfet and tri-gate devices
09/12/2012CN102668092A Compound semiconductor device and method for manufacturing same
09/12/2012CN102668091A Lateral power transistor device and method of manufacturing the same
09/12/2012CN102668090A Techniques and configurations to impart strain to integrated circuit devices
09/12/2012CN102668089A Techniques for forming contacts to quantum well transistors
09/12/2012CN102668088A Trigger stage thyristor having decoupled trigger stage
09/12/2012CN102668087A Bipolar transistor
09/12/2012CN102668086A Metal oxide field effect transistors on a mechanically flexible polymer substrate having a dielectric that can be processed from solution at low temperatures
09/12/2012CN102668077A Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
09/12/2012CN102668063A Semiconductor device
09/12/2012CN102668062A Semiconductor device
09/12/2012CN102668049A Method of manufacturing silicon carbide semiconductor device
09/12/2012CN102668041A Process for production of contact structure for organic semiconductor device, and contact structure for organic semiconductor device
09/12/2012CN102668040A Semiconductor device, and process for production of semiconductor device
09/12/2012CN102668037A Method for manufacturing semiconductor device
09/12/2012CN102668030A Composite substratge having single-crystal silicon carbide substrate
09/12/2012CN102668028A Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
09/12/2012CN102668023A Semiconductor device, combined substrate, and methods for manufacturing them
09/12/2012CN102667982A Varactor and method for producing a varactor
09/12/2012CN102667597A Active matrix substrate and display device
09/12/2012CN102667497A Acceleration sensor
09/12/2012CN102667496A 加速度传感器 Acceleration sensor
09/12/2012CN102666643A Polymer compound, and thin film and ink composition each containing same
09/12/2012CN102666549A Polycyclic ring-fused compound and organic thin film transistor utilizing same
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