Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2012
09/19/2012CN102683388A Semi-conductor structure and forming method thereof
09/19/2012CN102683387A Semiconductor memory
09/19/2012CN102683386A Semiconductor device
09/19/2012CN102683385A Semiconductor structure and forming method of semiconductor structure
09/19/2012CN102683379A 柔性显示装置及其制造方法 Method of manufacturing a flexible display device and
09/19/2012CN102683356A Double-layer isolation mixed crystal orientation strain nanowire metal oxide semiconductor field effect transistor (MOSFET)
09/19/2012CN102683341A TFT (Thin Film Transistor) array substrate and manufacturing method thereof as well as liquid crystal display
09/19/2012CN102683333A Double-layer isolation mixed crystal orientation accumulated nanowire metal oxide semiconductor field effect transistor (MOSFET)
09/19/2012CN102683263A Manufacturing method of grid isolating structure, grid isolating structure and semiconductor device
09/19/2012CN102683261A Superior integrity of high-k metal gate stacks by capping STI regions
09/19/2012CN102683211A A method of a dram memory with a two-sided transistor and a two-sided transistor structure
09/19/2012CN102683210A Semiconductor structure and manufacturing method thereof
09/19/2012CN102683209A Semiconductor device and manufacturing method thereof
09/19/2012CN102683207A Method for manufacturing MOS (metal oxide semiconductor) transistor and MOS transistor device
09/19/2012CN102683205A Method for manufacturing semiconductor built-in stress nanowire and semiconductor device
09/19/2012CN102683204A Preparation method of strained silicon nanowire N-channel metal oxide semiconductor field effect transistor (NMOSFET)
09/19/2012CN102683202A Method for manufacturing built-in stress nanowire and semiconductor
09/19/2012CN102683193A Manufacturing method of transistor, transistor, array substrate and display device
09/19/2012CN102683192A Fin-transistor formed on a patterned sti region by late fin etch
09/19/2012CN102683191A Method forming gate pattern and semiconductor device
09/19/2012CN102683187A Transverse double-diffusion MOS (metal oxide semiconductor) device and manufacturing method thereof
09/19/2012CN102683186A Method for inhibiting hot carrier injection and manufacture method of BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) device
09/19/2012CN102683178A Semiconductor-on-insulator and preparation method thereof
09/19/2012CN102683177A Method for manufacturing semiconductor built-in stress nanowire
09/19/2012CN102683176A Method for improving metal-insulator-metal capacitor reliability and process structure thereof
09/19/2012CN102169907B Film transistor and producing method thereof
09/19/2012CN102157563B Method for manufacturing metal oxide thin film transistor
09/19/2012CN102130153B Silicon-on-insulator N-type transverse insulated gate bipolar transistor and preparation method thereof
09/19/2012CN102122671B Rear through-hole interconnected wafer level MOSFET (metal oxide semiconductor field effect transistor) packaging structure and implementation method
09/19/2012CN102027583B Methods of making lateral junction field effect transistors using selective epitaxial growth
09/19/2012CN101933149B Semiconductor device, and method for manufacturing the same
09/19/2012CN101933126B Fabrication process of semiconductor device
09/19/2012CN101884108B Organic semiconductor device
09/19/2012CN101770956B Power metal oxide semiconductor field-effect transistor and manufacturing method thereof
09/19/2012CN101719513B 30V double-diffusion MOS device and 18V double-diffusion MOS device
09/19/2012CN101621062B Device structure for enhancing schottky breakdown voltage (BV) without affecting an integration of MOSFET-schottky device layout
09/19/2012CN101582448B 薄膜晶体管 The thin film transistor
09/19/2012CN101577293B Semiconductor device and method of manufacturing the same
09/19/2012CN101542738B Power mosfet device structure for high frequency applications
09/19/2012CN101431103B Manufacturing method of semiconductor device
09/18/2012USRE43673 Dual gate dielectric scheme: SiON for high performance devices and high K for low power devices
09/18/2012US8270068 Composite cavity for enhanced efficiency of up-conversion
09/18/2012US8269938 Fringe field switching mode liquid crystal display device and fabrication method thereof
09/18/2012US8269357 Microelectronic assembly with impedance controlled wirebond and conductive reference element
09/18/2012US8269355 Flexible contactless wire bonding structure and methodology for semiconductor device
09/18/2012US8269353 Semiconductor device having a plurality of adhesion area patterns and one or more non-adhesion area patterns
09/18/2012US8269350 Reducing the switching noise on substrate with high grounding resistance
09/18/2012US8269345 Bump I/O contact for semiconductor device
09/18/2012US8269316 Silicon based substrate and manufacturing method thereof
09/18/2012US8269313 Bipolar transistor including conductive first and second protection layers
09/18/2012US8269312 Semiconductor device with resistive element
09/18/2012US8269311 Multilayer oxide on nitride on oxide structure and method for the manufacture of semiconductor devices
09/18/2012US8269309 Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same
09/18/2012US8269307 Shallow trench isolation structure and method for forming the same
09/18/2012US8269295 Magnetic memory device having a recording layer
09/18/2012US8269294 Spin transport device
09/18/2012US8269293 Spin transistor and method of operating the same
09/18/2012US8269292 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current
09/18/2012US8269291 Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
09/18/2012US8269290 Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same
09/18/2012US8269288 Semiconductor device and method for manufacturing the same
09/18/2012US8269285 Semiconductor device
09/18/2012US8269282 Semiconductor component and method for producing a semiconductor component
09/18/2012US8269281 Method for forming gate oxide of semiconductor device
09/18/2012US8269280 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process
09/18/2012US8269277 RESURF device including increased breakdown voltage
09/18/2012US8269276 Method for the production of MOS transistors
09/18/2012US8269275 Method for fabricating a MOS transistor with reduced channel length variation and related structure
09/18/2012US8269274 Semiconductor device and method for fabricating the same
09/18/2012US8269272 Semiconductor device and method for manufacturing the same
09/18/2012US8269271 Hybrid planarFET and FinFET provided on a chip
09/18/2012US8269270 Power semiconductor component having a gentle turn-off behavior
09/18/2012US8269269 Nonvolatile semiconductor memory device and manufacturing method therefor
09/18/2012US8269268 Charge trap flash memory device and memory card and system including the same
09/18/2012US8269267 Nonvolatile semiconductor memory
09/18/2012US8269262 Vertical junction field effect transistor with mesa termination and method of making the same
09/18/2012US8269259 Gated AlGaN/GaN heterojunction Schottky device
09/18/2012US8269256 Semiconductor device and manufacturing method thereof
09/18/2012US8269252 Structure of high-frequency components with low stray capacitances
09/18/2012US8269249 Light emitting device package
09/18/2012US8269248 Light emitting assemblies and portions thereof
09/18/2012US8269247 Light emitting elements, light emitting devices including light emitting elements and methods for manufacturing such light emitting elements and/or devices
09/18/2012US8269233 Vertical ACLED structure
09/18/2012US8269232 TFT LCD array substrate and manufacturing method thereof
09/18/2012US8269231 Light emitting diode module providing stable color temperature
09/18/2012US8269230 Multilayer-doped organic light emitting diode structure
09/18/2012US8269228 AC light emitting diode
09/18/2012US8269227 Light emitting device and electronic device
09/18/2012US8269223 Polarization enhanced avalanche photodetector and method thereof
09/18/2012US8269222 Semiconductor photodetector with transparent interface charge control layer and method thereof
09/18/2012US8269221 Structure and method for thin film device
09/18/2012US8269220 Transparent transistor with multi-layered structures and method of manufacturing the same
09/18/2012US8269219 Printed TFT and TFT array with self-aligned gate
09/18/2012US8269218 Display device
09/18/2012US8269217 Display unit with thin film transistor having through holes in source/drain electrode
09/18/2012US8269212 OLED display with a common anode and method for forming the same
09/18/2012US8269210 Cathode assembly containing an ultraviolet light-blocking dielectric layer
09/18/2012US8269209 Isolation for nanowire devices
09/18/2012US8269208 Memory device
09/18/2012US8269207 Memory device having variable resistance memory cells disposed at crosspoint of wirings
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