Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2012
09/26/2012CN1550834B 液晶显示装置 The liquid crystal display device
09/26/2012CN102696112A Active matrix substrate, display panel provided with same, and method for manufacturing active matrix substrate
09/26/2012CN102696111A Thin film transistor (TFT) having copper electrodes
09/26/2012CN102694034A Semiconductor device
09/26/2012CN102694033A Schottky diode device and manufacturing method thereof
09/26/2012CN102694032A Power semiconductor device
09/26/2012CN102694031A Variable capacitance diode capable of improving frequency resolution of numerically controlled oscillator
09/26/2012CN102694030A Tunneling field effect transistor with graphene nanoribbon heterostructure
09/26/2012CN102694029A Semiconductor device
09/26/2012CN102694028A Power semiconductor device
09/26/2012CN102694027A Non-equilibrium junction terminal structure for super-junction device
09/26/2012CN102694026A 场效应晶体管 FET
09/26/2012CN102694025A Semiconductor element and method of manufacturing semiconductor element
09/26/2012CN102694024A 半导体器件 Semiconductor devices
09/26/2012CN102694023A Field-effect transistor and method of manufacturing the same
09/26/2012CN102694022A Semiconductor device and method for manufacturing same
09/26/2012CN102694021A Semiconductor device and method for manufacturing same
09/26/2012CN102694020A Semiconductor device
09/26/2012CN102694019A Nitride semiconductor device and method for manufacturing same
09/26/2012CN102694018A Power semiconductor device
09/26/2012CN102694017A 半导体器件 Semiconductor devices
09/26/2012CN102694016A Bipolar junction transistor (BJT) with surface protection and manufacturing method thereof
09/26/2012CN102694015A 集成电路结构 Integrated circuit structure
09/26/2012CN102694014A Semiconductor device and method for manufacturing same
09/26/2012CN102694013A Cascode circuit employing a depletion-mode, GaN-based FET
09/26/2012CN102694012A Depletion-mode metal oxide semiconductor (MOS) transistor
09/26/2012CN102694011A Semiconductor device
09/26/2012CN102694010A Semiconductor device
09/26/2012CN102694009A Semiconductor device and method for manufacturing same
09/26/2012CN102694008A High voltage component and method for manufacturing the same
09/26/2012CN102694007A Semiconductor structure and manufacturing method thereof
09/26/2012CN102694006A Semiconductor device and method of manufacturing semiconductor device
09/26/2012CN102694005A Display device, manufacturing method of the same and electronic equipment having the same
09/26/2012CN102693984A Multiple-valued non-volatile memory and preparation method thereof
09/26/2012CN102693981A High-voltage VDMOS (Vertically Diffused Metal Oxide Semiconductor) tube taking LDMOS (Laterally Diffused Metal Oxide Semiconductor) as terminal
09/26/2012CN102693975A Composite type capacitor
09/26/2012CN102693952A Packaging structure of TVS diode and method for manufacturing TVS diode
09/26/2012CN102693918A Thin film transistor and manufacture method thereof
09/26/2012CN102693917A Heat-stability nickel-based silicide source/drain MOSFETs (metal-oxide-semiconductor field-effect transistors) and manufacture method thereof
09/26/2012CN102270659B Multi-gate GaN high electron mobility transistors (HEMTs)
09/26/2012CN102064177B CMOS (Complementary Metal Oxide Semiconductor) transistor structure with stress amplification
09/26/2012CN102064173B Electrostatic protective device for silicon controlled rectifier
09/26/2012CN102054674B Metal gate electrode and method for manufacturing metal gate electrode
09/26/2012CN101976681B P-type silicon-on-insulator transverse device for improving current density and preparation process thereof
09/26/2012CN101976675B Phase change memory using wide band gap semiconductor diode as gating tube and method
09/26/2012CN101976670B Silicon-on-insulator integrated great-current P-type combined semiconductor device
09/26/2012CN101960576B Semiconductor device and method for manufacturing said device
09/26/2012CN101939843B 半导体装置 Semiconductor device
09/26/2012CN101924107B Stress enhanced CMOS (Complementary Metal-Oxide-Semiconductor) transistor structure
09/26/2012CN101911304B Amorphous oxide and field effect transistor
09/26/2012CN101878527B Wafer level packaging using flip chip mounting
09/26/2012CN101740564B Thin film transistor substrate and display device
09/26/2012CN101730939B A technique for enhancing transistor performance by transistor specific contact design
09/26/2012CN101719499B Composite material accumulation mode all-around-gate CMOS field effect cylindrical transistor
09/26/2012CN101710592B Thin film transistor and method of manufacturing thin film transistor
09/26/2012CN101702409B Transverse P-type double diffused metal oxide semiconductor transistor of silicon on insulator
09/26/2012CN101656213B Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof
09/26/2012CN101599492B A memory and production method thereof
09/26/2012CN101404295B Thin film transistor, display device having thin film transistor, and method for manufacturing the same
09/26/2012CN101370972B Method for manufacturing aluminum nitride crystal, aluminum nitride crystal, aluminum nitride crystal substrate and semiconductor device
09/26/2012CN101336485B TFT substrate and TFT substrate manufacturing method
09/26/2012CN101203960B Semiconductor device with relatively high breakdown voltage and manufacturing method
09/25/2012US8275695 Enhanced parimutuel wagering
09/25/2012US8274834 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
09/25/2012US8274794 Three-dimensional SoC structure formed by stacking multiple chip modules
09/25/2012US8274620 Liquid crystal display panel and active device array substrate thereof
09/25/2012US8274619 Display device wherein a value of a channel width divided by a channel length of one TFT is greater than another TFT, and a gap between a pixel electrode and a counter electrode is wider for the one TFT than the another TFT
09/25/2012US8274166 Semiconductor device and method of manufacturing the same
09/25/2012US8274163 Method and apparatus providing integrated circuit having redistribution layer with recessed connectors
09/25/2012US8274160 Active area bonding compatible high current structures
09/25/2012US8274159 Group III nitride based flip-chip integrated circuit and method for fabricating
09/25/2012US8274158 Structure, method and system for assessing bonding of electrodes in FCB packaging
09/25/2012US8274153 Electronic component built-in wiring substrate
09/25/2012US8274142 Semiconductor device having stacked multiple substrates and method for producing same
09/25/2012US8274139 Scalloped tubular electric via
09/25/2012US8274138 II-VI semiconductor nanowires
09/25/2012US8274137 Power semiconductor device
09/25/2012US8274136 Semiconductor patch antenna
09/25/2012US8274132 Electrical device and fabrication method
09/25/2012US8274130 Punch-through diode steering element
09/25/2012US8274128 Semiconductor device with buffer layer
09/25/2012US8274121 Compound field effect transistor with multi-feed gate and serpentine interconnect
09/25/2012US8274120 Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions
09/25/2012US8274117 Method for manufacturing semiconductor device, and semiconductor device
09/25/2012US8274114 Semiconductor device having a modified shallow trench isolation (STI) region and a modified well region
09/25/2012US8274113 Trench MOSFET having shielded electrode integrated with trench Schottky rectifier
09/25/2012US8274112 Semiconductor memory device having pillar structures
09/25/2012US8274111 Method for fabricating a semiconductor memory device having a buried word line structure
09/25/2012US8274110 Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory
09/25/2012US8274109 Semiconductor device with dynamical avalanche breakdown characteristics and method for manufacturing a semiconductor device
09/25/2012US8274108 Nonvolatile semiconductor memory device and method for manufacturing the same
09/25/2012US8274107 Exposure system, semiconductor device, and method for fabricating the semiconductor device
09/25/2012US8274102 Semiconductor device
09/25/2012US8274098 Field effect transistor, logic circuit including the same and methods of manufacturing the same
09/25/2012US8274095 Semiconductor device
09/25/2012US8274089 Light emitting diode having light emitting cell with different size and light emitting device thereof
09/25/2012US8274087 Nitride semiconductor substrate and manufacturing method of the same
09/25/2012US8274086 Wide band gap semiconductor device including junction field effect transistor
09/25/2012US8274085 Pixel structure and fabrication method thereof
09/25/2012US8274084 Method and structure for establishing contacts in thin film transistor devices
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