Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2012
09/20/2012US20120235214 Locally 2 sided chc dram access transistor structure
09/20/2012US20120235213 Semiconductor structure with a stressed layer in the channel and method for forming the same
09/20/2012US20120235209 High Voltage Rectifier and Switching Circuits
09/20/2012US20120235208 Semiconductor Mismatch Reduction
09/20/2012US20120235199 Power surface mount light emitting die package
09/20/2012US20120235165 Semiconductor device and method for manufacturing same
09/20/2012US20120235164 Transistor with a-face conductive channel and trench protecting well region
09/20/2012US20120235163 Semiconductor substrate and method for producing semiconductor substrate
09/20/2012US20120235162 Power converter
09/20/2012US20120235161 Group iii nitride templates and related heterostructures, devices, and methods for making them
09/20/2012US20120235160 Normally-Off Semiconductor Devices
09/20/2012US20120235159 Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions
09/20/2012US20120235156 Nitride semiconductor device
09/20/2012US20120235154 Semiconductor Device
09/20/2012US20120235153 Semiconductor Device and Method of Manufacturing the Same
09/20/2012US20120235152 Semiconductor device and method for manufacturing the same
09/20/2012US20120235151 Horizontal polysilicon-germanium heterojunction bipolar transistor
09/20/2012US20120235150 Semiconductor device
09/20/2012US20120235146 Organic Light-Emitting Display Device and Method of Manufacturing the Same
09/20/2012US20120235145 Printed Material Constrained By Well Structures And Devices Including Same
09/20/2012US20120235143 Vertical polysilicon-germanium heterojunction bipolar transistor
09/20/2012US20120235140 Manufacturing method of semiconductor device
09/20/2012US20120235139 Suspending Liquid or Solution for Organic Optoelectronic Device, Making Method thereof, and Applications
09/20/2012US20120235138 Mask level reduction for mofet
09/20/2012US20120235137 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
09/20/2012US20120235128 Element substrate and light emitting device
09/20/2012US20120235119 Method to Improve Nucleation of Materials on Graphene and Carbon Nanotubes
09/20/2012US20120235118 Nitride gate dielectric for graphene mosfet
09/20/2012US20120235022 Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus
09/20/2012DE112010003495T5 Tunnelfeldeffekteinheiten Tunnel field effect units
09/20/2012DE112010001476T5 Verfahren zur Herstellung eines Siliciumcarbidhalbleiterbauteils A method for producing a Siliciumcarbidhalbleiterbauteils
09/20/2012DE112009005412T5 Bipolartransistor mit seitlichem Emitter und Kollektor und Herstellungsverfahren Lateral bipolar transistor with emitter and collector and manufacturing processes
09/20/2012DE112009004805T5 Halbleitervorrichtung Semiconductor device
09/20/2012DE102012102124A1 Leistungshalbleitervorrichtung Power semiconductor device
09/20/2012DE102012004084A1 Interpolydielektrikum in einer Abschirm-Gate-MOSFET-Vorrichtung Interpoly in a shielding gate MOSFET device
09/20/2012DE102009047308B4 Verfahren zum Verringern des Reihenwiderstands in komplexen Transistoren durch zuverlässiges Einbetten von Metallsilizidkontakten in hochdotiertes Halbleitermaterial bei der Herstellung A method for reducing the series resistance in complex transistors by reliable embedding Metallsilizidkontakten in highly doped semiconductor material in the production
09/19/2012EP2500947A1 Semiconductor device and process for manufacturing same
09/19/2012EP2500704A1 Sensor device and method for producing sensor device
09/19/2012EP2499673A1 Schottky diode
09/19/2012EP2499672A2 Punch-through semiconductor device and method for producing same
09/19/2012EP2499669A1 Protective element for electronic circuits
09/19/2012CN202443975U Quick recovery diode
09/19/2012CN202443974U Array substrate and display device using same
09/19/2012CN202443973U 氧化物半导体薄膜晶体管与显示装置 Oxide semiconductor thin film transistor and a display device
09/19/2012CN202443972U Semiconductor device
09/19/2012CN102687400A 逻辑电路和半导体装置 A logic circuit and a semiconductor device
09/19/2012CN102687277A Semiconductor device and method for manufacturing semiconductor device
09/19/2012CN102687276A Pin diode
09/19/2012CN102687275A Semiconductor device
09/19/2012CN102687274A Trench metal-oxide-semiconductor field effect transistor
09/19/2012CN102687273A Germanium-based quantum well devices
09/19/2012CN102687272A SOS substrate with reduced stress
09/19/2012CN102687254A Methods for forming NMOS epi layers
09/19/2012CN102687253A Semiconductor device having doped epitaxial region and its methods of fabrication
09/19/2012CN102686787A Silicon carbide substrate,semiconductor device,method for producing silicon carbide substrate,and method for producing semiconductor device
09/19/2012CN102686669A Composition and luminescent element obtained using same
09/19/2012CN102684485A Vertical complementary field effect tube
09/19/2012CN102683431A 肖特基二极管及其制造方法 The Schottky diode and the manufacturing method
09/19/2012CN102683430A Schottky barrier diode
09/19/2012CN102683429A Ultra-high-current high-frequency FRD chip and manufacturing method thereof
09/19/2012CN102683428A Ultrafast recovery diode
09/19/2012CN102683427A Semiconductor device and method for manufacturing the same
09/19/2012CN102683426A Semiconductor device, strain gauge, pressure sensor, and method of forming semiconductor device
09/19/2012CN102683425A Non-volatile memory device and method for fabricating the same
09/19/2012CN102683424A Display device and array substrate as well as thin film transistor and manufacturing method thereof
09/19/2012CN102683423A Metal oxide thin film transistor with top gate structure and manufacturing method thereof
09/19/2012CN102683422A Oxide thin film transistor and manufacturing method thereof as well as array substrate and display device
09/19/2012CN102683421A Semiconductor device and method for manufacturing the same
09/19/2012CN102683420A Thin film transistor structure and display device having same
09/19/2012CN102683419A SOI (silicon on insulator)/MOS (metal oxide semiconductor) device structure with back gate connected with negative voltage through alloy bonding and manufacturing method thereof
09/19/2012CN102683418A FINFET dynamic random access memory unit and processing method thereof
09/19/2012CN102683417A Silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistor
09/19/2012CN102683416A Soi mos transistor
09/19/2012CN102683415A Isolated tri-gate transistor fabricated on bulk substrate
09/19/2012CN102683414A Mixed crystal orientation transoid mode semiconductor nanowire metal oxide semiconductor field effect transistor (MOSFET)
09/19/2012CN102683413A Mixed crystal orientation inverted pattern type semiconductor nanowire MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)
09/19/2012CN102683412A Double-layer isolation mixed crystal orientation strain nanowire metal oxide semiconductor field effect transistor (MOSFET)
09/19/2012CN102683411A MOSFET device with thick trench bottom oxide
09/19/2012CN102683410A Field-effect transistor, field-effect transistor manufacturing method, solid-state imaging device, and electronic apparatus
09/19/2012CN102683409A Methods for fabricating transistors including circular trenches
09/19/2012CN102683408A Super junction high-voltage power device structure
09/19/2012CN102683407A Transistor structure and method for preparing the same
09/19/2012CN102683406A GaN-based MS grid enhancement type high electron mobility transistor and manufacture method thereof
09/19/2012CN102683405A Semiconductor device, manufacturing method and transistor circuit
09/19/2012CN102683404A Insulated gate bipolar transistor and preparation method thereof
09/19/2012CN102683403A Trench gate charge storage type insulated gate bipolar transistor (IGBT)
09/19/2012CN102683402A Flat-grid electric charge storage type IGBT (insulated gate bipolar translator)
09/19/2012CN102683401A Self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and preparation method thereof
09/19/2012CN102683400A Self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and preparation method thereof
09/19/2012CN102683399A Embedded type epitaxial outer base region bipolar transistor and preparation method thereof
09/19/2012CN102683398A SONOS (Silicon Oxide Nitride Oxide Semiconductor) gate structure, manufacture method, and semiconductor device
09/19/2012CN102683397A Metal gate structure and preparation method of metal gate structure
09/19/2012CN102683396A Semiconductor apparatus with overvoltage protection and bidirectional polar device based on apparatus
09/19/2012CN102683395A Self-alignment lifting outer base region germanium silicon heterojunction bipolar transistor and preparation method thereof
09/19/2012CN102683394A Enhanced device and manufacturing method thereof
09/19/2012CN102683393A Semiconductor device and reference voltage generation circuit
09/19/2012CN102683392A Metal wire structure and groove manufacturing method
09/19/2012CN102683391A Methods and devices for fabricating and assembling printable semiconductor elements
09/19/2012CN102683390A Inter-poly dielectric in shielded gate mosfet device
09/19/2012CN102683389A Flexible display substrate and preparation method thereof
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