Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2012
10/04/2012WO2012132734A1 Organic semiconductor polymer, composition for organic semiconductor material, and photovoltaic cell
10/04/2012WO2012132674A1 Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus
10/04/2012WO2012132594A1 Silicon carbide substrate
10/04/2012WO2012132539A1 Semiconductor device having amplification factor with less dependence on current value
10/04/2012WO2012132509A1 Igbt
10/04/2012WO2012132487A1 Method for producing organic transistor
10/04/2012WO2012132407A1 Nitride semiconductor device and method for manufacturing same
10/04/2012WO2012132250A1 Method for manufacturing organic element, method for bonding organic molecular crystal layer, method for manufacturing fine linear conductor, organic element, and fine linear conductor
10/04/2012WO2012132229A1 MANUFACTURING METHOD FOR TRENCH-TYPE SiC SEMICONDUCTOR DEVICE
10/04/2012WO2012132225A1 Semiconductor device and manufacturing method therefor
10/04/2012WO2012132219A1 Semiconductor device and manufacturing method for same
10/04/2012WO2012132207A1 Semiconductor device, method of manufacturing semiconductor device, and soi substrate
10/04/2012WO2012131911A1 Electronic device and method for manufacturing same
10/04/2012WO2012131898A1 Silicon carbide semiconductor device
10/04/2012WO2012131878A1 Vertical-type semiconductor device
10/04/2012WO2012131818A1 Semiconductor device and method for manufacturing same
10/04/2012WO2012131768A1 Silicon carbide semiconductor device and method for producing same
10/04/2012WO2012131395A1 Electronic device and its method of manufacture
10/04/2012WO2012131064A1 Sulphur-doped power semiconductor component with deep pn junction
10/04/2012WO2012129894A1 Semiconductor structure and method for forming the same
10/04/2012WO2012087748A3 Uniaxially strained quantum well device and method of making same
10/04/2012WO2012074872A3 Silicon and silicon germanium nanowire structures
10/04/2012WO2012071299A3 Vertical field effect transistor
10/04/2012WO2012071297A3 Vertical dmos field -effect transistor and method of making the same
10/04/2012US20120252193 Double and triple gate mosfet devices and methods for making same
10/04/2012US20120252185 Methods of forming fine patterns in integrated circuit devices
10/04/2012US20120250417 Hot electron injection nanocrystals mos transistor
10/04/2012US20120250406 Magnetic memory device and method of magnetic domain wall motion
10/04/2012US20120249937 Display device and method for manufacturing the same
10/04/2012US20120249914 Display apparatus having improved static discharge characteristics
10/04/2012US20120249497 Display Device
10/04/2012US20120248584 Nano/micro-sized diode and method of preparing the same
10/04/2012US20120248583 Method for forming germanium oxide film and material for electronic device
10/04/2012US20120248581 Semiconductor device and manufacturing method thereof
10/04/2012US20120248579 Semiconductor device and manufacturing method thereof
10/04/2012US20120248578 Semiconductor wafer and method of producing the same
10/04/2012US20120248577 Controlled Doping in III-V Materials
10/04/2012US20120248576 Semiconductor Device and Substrate with Chalcogen Doped Region
10/04/2012US20120248575 Semiconductor device with multilayer contact and method of manufacturing the same
10/04/2012US20120248574 Semiconductor Structure and Manufacturing Method and Operating Method for the Same
10/04/2012US20120248573 Tunable semiconductor device
10/04/2012US20120248572 Semiconductor device having capacitor capable of reducing additional processes and its manufacture method
10/04/2012US20120248571 Metal-insulation-metal device and manufacture method thereof
10/04/2012US20120248570 On chip integrated inductor
10/04/2012US20120248566 Configuration and method to generate saddle junction electric field in edge termination
10/04/2012US20120248565 Switching circuit including nitride semiconductor devices
10/04/2012US20120248564 Dual Compartment Semiconductor Package with Temperature Sensor
10/04/2012US20120248558 Stram with compensation element and method of making the same
10/04/2012US20120248557 Confined cell structures and methods of forming confined cell structures
10/04/2012US20120248556 Three-dimensional magnetic circuits including magnetic connectors
10/04/2012US20120248555 MEMS sensing device and method for making same
10/04/2012US20120248554 Micromechanical Sound Transducer Having a Membrane Support with Tapered Surface
10/04/2012US20120248553 Sensor device and manufacturing method thereof
10/04/2012US20120248552 Method for creating monocrystalline piezoresistors
10/04/2012US20120248551 Mol insitu pt rework sequence
10/04/2012US20120248550 Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
10/04/2012US20120248549 Method for Increasing Reverse Breakdown Voltage Between P-Well and N-Well and related Semiconductor Silicon Devices
10/04/2012US20120248542 Transistor with adjustable supply and/or threshold voltage
10/04/2012US20120248537 Fabrication of devices having different interfacial oxide thickness via lateral oxidation
10/04/2012US20120248536 Semidonductor device having stressed metal gate and methods of manufacturing same
10/04/2012US20120248535 Self-aligned iii-v field effect transistor (fet) and integrated circuit (ic) chip
10/04/2012US20120248534 Structures for power transistor and methods of manufacture
10/04/2012US20120248533 Field plate and circuit therewith
10/04/2012US20120248530 Approach to intergrate schottky in mosfet
10/04/2012US20120248529 Methods of forming vertical field-effect transistor with self-aligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby
10/04/2012US20120248528 Trench-gate ldmos structures
10/04/2012US20120248527 Semiconductor memory device and its manufacturing method
10/04/2012US20120248526 Wafer Level MOSFET Metallization
10/04/2012US20120248525 Three dimensional semiconductor memory devices and methods of fabricating the same
10/04/2012US20120248524 Non-volatile semiconductor memory device and process of manufacturing the same
10/04/2012US20120248523 Non-volatile memory and logic circuit process integration
10/04/2012US20120248522 Dram with schottky barrier fet and mim trench capacitor
10/04/2012US20120248519 Semiconductor device and method of forming the same
10/04/2012US20120248518 Isolation structure and device structure including the same
10/04/2012US20120248517 Magnetic memory device
10/04/2012US20120248513 Semiconductor device and manufacturing method thereof
10/04/2012US20120248512 On-gate contacts in a mos device
10/04/2012US20120248511 Semiconductor structure and method for slimming spacer
10/04/2012US20120248510 Backside bevel protection
10/04/2012US20120248509 Structure and process for metal fill in replacement metal gate integration
10/04/2012US20120248508 Forming borderless contact for transistors in a replacement metal gate process
10/04/2012US20120248507 Metal gate structure and manufacturing method thereof
10/04/2012US20120248506 Method and structure of monolithetically integrated inertial sensor using ic foundry-compatible processes
10/04/2012US20120248503 Semiconductor memory cell, device, and method for manufacturing the same
10/04/2012US20120248502 Iii-v field effect transistor (fet) and iii-v semiconductor on insulator (iiivoi) fet, integrated circuit (ic) chip and method of manufacture
10/04/2012US20120248501 Self-aligned iii-v field effect transistor (fet), integrated circuit (ic) chip with self-aligned iii-v fets and method of manufacture
10/04/2012US20120248500 Nitride semiconductor device and method of manufacturing nitride semiconductor device
10/04/2012US20120248499 Semiconductor device
10/04/2012US20120248463 Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
10/04/2012US20120248462 Igbt
10/04/2012US20120248461 Silicon carbide semiconductor device
10/04/2012US20120248460 Systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (la-cvd), and structures formed using same
10/04/2012US20120248459 Substrate, template substrate, semiconductor light emitting element, semiconductor light emitting element producing method, illumination device using semiconductor light emitting element and electronic device
10/04/2012US20120248456 Nitride semiconductor multilayer structure, method for producing same, and nitride semiconductor light-emitting element
10/04/2012US20120248455 Process for manufacturing a crystalline silicon layer
10/04/2012US20120248451 Field-effect transistor, semiconductor memory display element, image display device, and system
10/04/2012US20120248450 Active matrix substrate and method for producing same
10/04/2012US20120248449 Thin film transistor and method of fabricating the same
10/04/2012US20120248448 Semiconductor device and manufacturing method of the same
10/04/2012US20120248446 Amorphous oxide thin film transistor, method for manufacturing the same, and display panel
1 ... 373 374 375 376 377 378 379 380 381 382 383 384 385 386 387 388 389 390 391 392 393 ... 2182