Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2012
10/04/2012US20120248445 Amorphous multicomponent dielectric based on the mixture of high band gap and high k materials, respective devices and manufacture
10/04/2012US20120248444 Thin film transistor array panel and manufacturing method of the same
10/04/2012US20120248443 Active matrix substrate and method for manufacturing the same
10/04/2012US20120248442 Method of forming a fine pattern, display substrate, and method of manufacturing the same using the method of forming a fine pattern
10/04/2012US20120248434 Memory device
10/04/2012US20120248433 Semiconductor device
10/04/2012US20120248432 Semiconductor device and method for manufacturing the same
10/04/2012US20120248431 Transistor array substrate
10/04/2012US20120248417 Double gate nanostructure fet
10/04/2012US20120248416 High Performance Field-Effect Transistors
10/04/2012US20120248415 Resonance tunneling devices and methods of manufacturing the same
10/04/2012US20120248414 Semiconductor Device, Method Of Manufacturing The Same, And Electronic Device Including The Semiconductor Device
10/04/2012US20120248412 Vertically Correlated Clusters of Charged Quantum Dots for Optoelectronic Devices, and Methods of Making Same
10/04/2012US20120248403 Layer assembly
10/04/2012US20120248401 3-dimensional graphene structure and process for preparing and transferring the same
10/04/2012DE112011100159T5 Einheit mit extrem dünnem SOI mit dünnem BOX und Metallrückgate Unit with extremely thin SOI and BOX with thin metal back gate
10/04/2012DE112011100099T5 Halbleiterbauelement Semiconductor device
10/04/2012DE112010003772T5 Aktivierung von Graphen-Pufferschichten auf Siliciumcarbid Activation of graphene buffer layers on silicon carbide
10/04/2012DE112009004277T5 Leistungs-halbleitervorrichtung Power semiconductor device
10/04/2012DE10257203B4 Lastansteuerungsschaltung unter Verwendung einer Freilaufdiode Load driving circuit using a free-wheeling diode
10/04/2012DE102012102341A1 Halbleiterbauelement und Substrat mit chalkogen-dotiertem Gebiet Semiconductor device and substrate with chalcogen-doped region
10/04/2012DE102011006675A1 Leistungshalbleiterbauelement mit tiefem pn-Übergang Power semiconductor component with a deep pn junction
10/04/2012DE102007020657B4 Halbleiterbauelement mit einem Halbleiterkörper und Verfahren zur Herstellung desselben Of the same semiconductor device with a semiconductor body and method for producing
10/04/2012DE102007019551B9 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
10/04/2012CA2830801A1 Silicon carbide semiconductor device with a gate electrode
10/04/2012CA2796994A1 Igbt
10/03/2012EP2506309A1 Schottky diode and corresponding production method
10/03/2012EP2506308A1 Amorphous oxide thin film transistor, method for manufacturing the same, and display panel
10/03/2012EP2506307A1 Thin film transistor and manufacturing method for same, semiconductor device and manufacturing method for same, and display device
10/03/2012EP2506306A1 Shift register and display apparatus
10/03/2012EP2506303A1 Semiconductor device and method for manufacturing the same
10/03/2012EP2506292A1 Process for production of contact structure for organic semiconductor device, and contact structure for organic semiconductor device
10/03/2012EP2506290A1 Method for forming an epitaxial layer, in particular on transistor source and drain regions with total depletion
10/03/2012EP2506018A2 Acceleration sensor
10/03/2012EP2506017A1 Acceleration sensor
10/03/2012EP2504858A2 System and method for providing symmetric, efficient bi-directional power flow and power conditioning
10/03/2012EP2504855A1 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
10/03/2012EP2504059A1 Systems and methods for non-periodic pulse sequential lateral solidification
10/03/2012CN202473934U Diode core structure for rectification diode
10/03/2012CN202473933U Power metal oxide semiconductor (MOS) device with improved terminal structure
10/03/2012CN202473932U Power MOSFET device
10/03/2012CN202473931U High-power controllable silicon
10/03/2012CN202473930U Insulated gate bipolar transistor (IGBT) with low turn-on saturation voltage drop
10/03/2012CN202473929U Groove metal oxide semiconductor (MOS) device of low grid leak capacitor
10/03/2012CN202473922U TFT array substrate and display device
10/03/2012CN1918672B Thin-film transistor and thin-film transistor substrate, sputtering target, transparent conductive film and transparency electrode, and production methods thereof
10/03/2012CN1877799B 半导体器件以及其制作方法 Semiconductor device and manufacturing method thereof
10/03/2012CN1674300B Transistor with shallow germanium implantation region in channel
10/03/2012CN102714496A 半导体装置 Semiconductor device
10/03/2012CN102714278A Device, thin film transistor, method for manufacturing the device and method for manufacturing the thin film transistor
10/03/2012CN102714276A Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor
10/03/2012CN102714226A Pin diode
10/03/2012CN102714225A Junction field effect transistor and method of manufacturing the same
10/03/2012CN102714224A Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices
10/03/2012CN102714223A Oxide-nitride-oxide stack having multiple oxynitride layers
10/03/2012CN102714222A A body-tied asymmetric n-type field effect transistor
10/03/2012CN102714221A Circuit board, display device, and process for production of circuit board
10/03/2012CN102714220A Shift register and display apparatus
10/03/2012CN102714219A Reverse side engineered III-nitride devices
10/03/2012CN102714218A Punch-through semiconductor device and method for producing same
10/03/2012CN102714217A Semiconductor device and electric power conversion device using same
10/03/2012CN102714216A Extremely low resistance films and methods for modifying or creating same
10/03/2012CN102714215A Improved trench termination structure
10/03/2012CN102714209A 半导体存储器件及其驱动方法 Semiconductor memory device and driving method
10/03/2012CN102714208A 半导体装置 Semiconductor device
10/03/2012CN102714184A 半导体器件 Semiconductor devices
10/03/2012CN102714183A Semiconductor device having strain material
10/03/2012CN102714180A Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
10/03/2012CN102714179A Multi-gate III-V quantum well structures
10/03/2012CN102714177A Field-effect transistor device having a metal gate stack with an oxygen barrier layer
10/03/2012CN102714162A Epitaxially laminated III-nitride substrate
10/03/2012CN102714160A Method for manufacturing thin-film transistor device, thin-film transistor, and display device
10/03/2012CN102714159A Nickel-silicide formation with differential Pt composition
10/03/2012CN102714152A Functional element and manufacturing method of same
10/03/2012CN102714149A Apparatus and method for formation of low-temperature polysilicon film
10/03/2012CN102714143A 外延片以及半导体元件 Epitaxial wafers and semiconductor element
10/03/2012CN102714138A Semiconductor device and manufacturing method thereof
10/03/2012CN102714026A Display device
10/03/2012CN102714001A Semiconductor device and electronic device including the same
10/03/2012CN102712558A Heterocycle-containing asymmetric aromatic compound, compound for organic thin film transistor, and organic thin film transistor using same
10/03/2012CN102709470A Nano-multilayer film, field effect tube, sensor, random access memory and preparation method
10/03/2012CN102709333A Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof
10/03/2012CN102709332A Diode device based on grapheme and structure of logic unit of diode device
10/03/2012CN102709331A Channel metal-oxide semiconductor (MOS) structural semiconductor device and preparation method thereof
10/03/2012CN102709330A BE-SONOS (Band-gap Engineering SONOS (Silicon Oxide Nitride Oxide Semiconductor)) structure device with low operation voltage and forming method
10/03/2012CN102709329A Thin film transistor and manufacturing method thereof
10/03/2012CN102709328A Array substrate, manufacturing method thereof, display panel and display device
10/03/2012CN102709327A Oxide film transistor and preparation method thereof, array substrate and display device
10/03/2012CN102709326A Thin film transistor and manufacturing method thereof as well as array substrate and display device
10/03/2012CN102709325A High-voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) device
10/03/2012CN102709324A Low-power-consumption and high-voltage driving circuit and two-way P-type switching tube used by same
10/03/2012CN102709323A Bandgap engineered MOS-gated power transistors
10/03/2012CN102709322A High-threshold voltage gallium nitride enhanced transistor structure and preparation method thereof
10/03/2012CN102709321A Enhanced switch element and production method thereof
10/03/2012CN102709320A Longitudinally-conductive GaN (gallium nitride)-substrate MISFET (metal insulated semiconductor field-effect transistor) device and manufacturing method thereof
10/03/2012CN102709319A Semiconductor device and method of manufacturing the same, and power supply apparatus
10/03/2012CN102709318A Embedded epitaxial external base region bipolar transistor and preparation method thereof
10/03/2012CN102709317A Low-threshold voltage diode
10/03/2012CN102709316A Three-dimensional (3D) oxide semiconductor thin film transistor and preparation method thereof
10/03/2012CN102709315A BE-SONOS (Band-gap Engineering SONOS (Silicon Oxide Nitride Oxide Semiconductor)) structure device with tapered energy band
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