| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/06/2013 | CN102956703A Semiconductor device and manufacture method thereof |
| 03/06/2013 | CN102956702A Semiconductor apparatus and manufacturing method thereof |
| 03/06/2013 | CN102956701A Structure and forming method of fin type field-effect tube |
| 03/06/2013 | CN102956700A Semiconductor structure and manufacturing method thereof |
| 03/06/2013 | CN102956699A 半导体器件 Semiconductor devices |
| 03/06/2013 | CN102956698A Pressure strain p-MOSFET (metal-oxide-semiconductor field effect transistor) device structure and manufacturing method thereof |
| 03/06/2013 | CN102956697A High electron mobility transistor with integrated low forward bias diode |
| 03/06/2013 | CN102956696A Heavy-current P-type silicon-on-insulator lateral insulated gate bipolar transistor |
| 03/06/2013 | CN102956695A Semiconductor device having high-k gate dielectric layer and manufacturing method thereof |
| 03/06/2013 | CN102956694A Graphene switching device having tunable barrier |
| 03/06/2013 | CN102956693A FINFET (Fin-Field-Effect-Transistor) and application circuit applying FIFET |
| 03/06/2013 | CN102956692A Buffered finFET device |
| 03/06/2013 | CN102956691A Thin-film transistor and method for fabricating thereof, liquid crystal display device and method for fabricating the same |
| 03/06/2013 | CN102956690A Semiconductor device and method of manufacturing the same |
| 03/06/2013 | CN102956689A Power transistor device and fabricating method thereof |
| 03/06/2013 | CN102956688A Semiconductor device |
| 03/06/2013 | CN102956687A SOI-LIGBT (Silicon on Insulator-Lateral Insulated-Gate Bipolar Transistor) device based on double channel structure |
| 03/06/2013 | CN102956686A Silicon germanium nanostructure substrate and manufacturing method thereof |
| 03/06/2013 | CN102956685A Super-voltage diode chip with heat resisting plane structure |
| 03/06/2013 | CN102956684A Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path |
| 03/06/2013 | CN102956683A Thin film device and manufacturing method thereof |
| 03/06/2013 | CN102956682A Semiconductor device, electro-optic device, power conversion device, and electronic apparatus |
| 03/06/2013 | CN102956681A Thin film device |
| 03/06/2013 | CN102956680A Semiconductor device and method for forming semiconductor device |
| 03/06/2013 | CN102956679A Compound semiconductor device and method for manufacturing the same |
| 03/06/2013 | CN102956678A Polysilicon film |
| 03/06/2013 | CN102956676A Thin film transistor (TFT) array substrate, preparation method and quantum dot (QD) light emitting diode (LED) display device |
| 03/06/2013 | CN102956646A Thin film transistor substrate and display device comprising same |
| 03/06/2013 | CN102956641A Circuit structure with vertical double gate |
| 03/06/2013 | CN102956640A Double-conduction semiconductor component and manufacturing method thereof |
| 03/06/2013 | CN102956639A Trench-gate metal oxide semiconductor component and manufacture method thereof |
| 03/06/2013 | CN102956638A One-piece IGBT (Insulated Gate Bipolar Translator) device and processing method thereof |
| 03/06/2013 | CN102956636A High-current N type silicon-on-insulator lateral insulated-gate bipolar transistor |
| 03/06/2013 | CN102956632A Two-way SCR (Silicon Controlled Rectifier)-based ESD (electrostatic discharge) protection structure with low parasitic capacitance |
| 03/06/2013 | CN102956591A Semiconductor device and method for manufacturing the same |
| 03/06/2013 | CN102956550A Method for manufacturing active array substrate and active array substrate |
| 03/06/2013 | CN102956504A Improved polycrystalline silicon exhausting method and MOS (Metal Oxide Semiconductor) transistors |
| 03/06/2013 | CN102956501A Method of forming self-aligned contact opening in mosfet |
| 03/06/2013 | CN102956498A Semiconductor device and manufacture method thereof |
| 03/06/2013 | CN102956497A Transistor and forming method thereof |
| 03/06/2013 | CN102956496A Fin type field effect transistor and manufacturing method thereof |
| 03/06/2013 | CN102956495A Transistor structure, shallow groove isolation structure and manufacturing method thereof |
| 03/06/2013 | CN102956494A Semiconductor device and manufacture method thereof |
| 03/06/2013 | CN102956493A Transistor and forming method thereof |
| 03/06/2013 | CN102956492A Semiconductor structure and manufacture method thereof and MOS (metal oxide semiconductor) transistor and manufacture method thereof |
| 03/06/2013 | CN102956490A Semiconductor device and manufacturing method for same |
| 03/06/2013 | CN102956486A Semiconductor device structure and manufacturing method for same |
| 03/06/2013 | CN102956485A Semiconductor device structure and manufacturing method for same |
| 03/06/2013 | CN102956483A Semiconductor device structure and manufacturing method for same |
| 03/06/2013 | CN102956480A Manufacturing method and device for reducing collector resistance through germanium-silicon HBT (Heterojunction Bipolar Transistor) with spuriously buried layer |
| 03/06/2013 | CN102956479A Insulated gate bipolar transistor structure and manufacturing method thereof |
| 03/06/2013 | CN102956466A Finned transistor and manufacturing method thereof |
| 03/06/2013 | CN102956462A Double gated flash memory |
| 03/06/2013 | CN102956459A Semiconductor device and manufacture method thereof |
| 03/06/2013 | CN102956458A Semiconductor device structure and manufacturing method for same |
| 03/06/2013 | CN102956457A Semiconductor device structure, manufacturing method for same and manufacturing method for fin of semiconductor |
| 03/06/2013 | CN102956454A Semiconductor structure and manufacturing method thereof |
| 03/06/2013 | CN102956453A Semiconductor device and manufacture method thereof |
| 03/06/2013 | CN102956449A Threshold voltage adjustment in fin transistor by corner implantation |
| 03/06/2013 | CN102956448A Method for manufacturing semiconductor device e.g. mosfet, involves removing semiconductor body from side up to range defined by foreign substances or pn junction, where pn junction is defined by foreign substances |
| 03/06/2013 | CN102956446A Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template |
| 03/06/2013 | CN102956441A Method for producing semiconductor components on substrate and substrate with semiconductor components |
| 03/06/2013 | CN102955308A Array substrate for display device and method of fabricating the same |
| 03/06/2013 | CN102361034B Vertical selection tube and memory cell formed by vertical selection tube |
| 03/06/2013 | CN102339735B Preparation method for graphene transistor |
| 03/06/2013 | CN102290412B 像素结构 Pixel structure |
| 03/06/2013 | CN102227001B Germanium-based NMOS (N-channel metal oxide semiconductor) device and manufacturing method thereof |
| 03/06/2013 | CN102201453B Memory unit and nonvolatile memory device and foming method thereof |
| 03/06/2013 | CN102148256B Grid enhanced-power semiconductor field effect transistor |
| 03/06/2013 | CN102136496B Semiconductor element |
| 03/06/2013 | CN102074577B Vertical channel field effect transistor and preparation method thereof |
| 03/06/2013 | CN102013427B Avalanche breakdown diode structure and production method thereof |
| 03/06/2013 | CN101958321B 半导体装置 Semiconductor device |
| 03/06/2013 | CN101924118B Controlling the circuitry and memory array relative height in a phase change memory feol process flow |
| 03/06/2013 | CN101924111B Semiconductor device and method of manufacturing the same |
| 03/06/2013 | CN101868968B Light source frequency detection circuit using bipolar transistor |
| 03/06/2013 | CN101826555B Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the same |
| 03/06/2013 | CN101814513B Semiconductor device, CPU, image processing circuit and electronic device |
| 03/06/2013 | CN101800242B Nano electron device using nanocrystal material as Coulomb island and manufacture method thereof |
| 03/06/2013 | CN101796619B Circuit board and display device |
| 03/06/2013 | CN101592626B Quasi-one-dimensional metal oxide nano-material biosensor and method for manufacturing same |
| 03/06/2013 | CN101520578B 液晶显示装置及其影像显示方法 Device and image display method LCD |
| 03/06/2013 | CN101379873B Surface micromachined differential microphone |
| 03/06/2013 | CN101379610B Low resistance gate for power MOSFET applications and method of manufacture |
| 03/06/2013 | CN101310386B Hybrid substrate technology for high-mobility planar and multiple-gate mosfets |
| 03/06/2013 | CN101308868B Floating grid with multiple layer hetero quantum point structure applicable for memory unit |
| 03/06/2013 | CN101291554B Semiconductor device manufacturing method and display device |
| 03/06/2013 | CN101170127B Semiconductor device and its manufacture method |
| 03/05/2013 | US8392703 Electronic signature verification method implemented by secret key infrastructure |
| 03/05/2013 | US8391017 Thin-film capacitor structures embedded in semiconductor packages and methods of making |
| 03/05/2013 | US8390657 Driver circuit, optical print head, and image forming apparatus |
| 03/05/2013 | US8390135 Semiconductor device |
| 03/05/2013 | US8390134 Semiconductor device having surface protective films on bond pad |
| 03/05/2013 | US8390133 Semiconductor device and manufacturing method thereof |
| 03/05/2013 | US8390131 Semiconductor device with reduced contact resistance |
| 03/05/2013 | US8390129 Semiconductor device with a plurality of mark through substrate vias |
| 03/05/2013 | US8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings |
| 03/05/2013 | US8390122 Sputtering targets including excess cadmium for forming a cadmium stannate layer |
| 03/05/2013 | US8390101 High voltage switching devices and process for forming same |
| 03/05/2013 | US8390098 Semiconductor device providing a first electrical conductor and a second electrical conductor in one through hole and method for manufacturing the same |