| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/25/2013 | US20130187243 Method, structure and design structure for customizing history effects of soi circuits |
| 07/25/2013 | US20130187242 CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES |
| 07/25/2013 | US20130187241 Interfacial layer regrowth control in high-k gate structure for field effect transistor |
| 07/25/2013 | US20130187240 Semiconductor device and method for manufacturing the same |
| 07/25/2013 | US20130187238 Semiconductor device |
| 07/25/2013 | US20130187231 Esd protection circuit |
| 07/25/2013 | US20130187230 Semiconductor device and manufacturing method of the same |
| 07/25/2013 | US20130187229 Semiconductor device with a low-k spacer and method of forming the same |
| 07/25/2013 | US20130187228 FinFET Semiconductor Devices with Improved Source/Drain Resistance and Methods of Making Same |
| 07/25/2013 | US20130187227 Flatband shift for improved transistor performance |
| 07/25/2013 | US20130187226 Lateral double diffused mos transistors and methods of fabricating the same |
| 07/25/2013 | US20130187225 High voltage mosfet device |
| 07/25/2013 | US20130187223 Semiconductor device and method of manufacturing the same |
| 07/25/2013 | US20130187222 Semiconductor device and method of manufacturing the same |
| 07/25/2013 | US20130187221 Semiconductor device and method of forming the same |
| 07/25/2013 | US20130187220 Vertical memory devices, apparatuses including vertical memory devices, and methods for forming such vertical memory devices and apparatuses |
| 07/25/2013 | US20130187219 High-Voltage Vertical Transistor With a Varied Width Silicon Pillar |
| 07/25/2013 | US20130187218 Esd protection circuit |
| 07/25/2013 | US20130187217 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 07/25/2013 | US20130187216 Non-volatile semiconductor memory device |
| 07/25/2013 | US20130187215 Methods of forming nanoscale floating gate |
| 07/25/2013 | US20130187214 Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, meory arrays incorporating such strings, and methods of accesssing and forming the same |
| 07/25/2013 | US20130187213 Method of making a non-volatile double gate memory cell |
| 07/25/2013 | US20130187209 Semiconductor devices having encapsulated stressor regions and related fabrication methods |
| 07/25/2013 | US20130187208 Semiconductor device and method for manufacturing semiconductor device |
| 07/25/2013 | US20130187207 Replacement source/drain finfet fabrication |
| 07/25/2013 | US20130187206 FinFETs and Methods for Forming the Same |
| 07/25/2013 | US20130187205 Epitaxial replacement of a raised source/drain |
| 07/25/2013 | US20130187204 High frequency semiconductor switch |
| 07/25/2013 | US20130187203 Formation of the dielectric cap layer for a replacement gate structure |
| 07/25/2013 | US20130187202 Spacer profile engineering using films with continuously increased etch rate from inner to outer surface |
| 07/25/2013 | US20130187201 Sensor Device and Method |
| 07/25/2013 | US20130187198 Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure |
| 07/25/2013 | US20130187197 High electron mobility transistor and manufacturing method thereof |
| 07/25/2013 | US20130187196 Integrated Circuit Including Field Effect Transistor Structures with Gate and Field Electrodes and Methods for Manufacturing and Operating an Integrated Circuit |
| 07/25/2013 | US20130187195 Power Transistor |
| 07/25/2013 | US20130187173 Conductivity modulation in a silicon carbide bipolar junction transistor |
| 07/25/2013 | US20130187172 Nitride semiconductor epitaxial wafer and field effect nitride transistor |
| 07/25/2013 | US20130187171 Method to form silicide contact in trenches |
| 07/25/2013 | US20130187166 Light-emitting device |
| 07/25/2013 | US20130187165 Semiconductor Device, and Manufacturing Method Thereof |
| 07/25/2013 | US20130187164 Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus |
| 07/25/2013 | US20130187161 Semiconductor device and manufacturing method thereof |
| 07/25/2013 | US20130187159 Integrated circuit and method of forming an integrated circuit |
| 07/25/2013 | US20130187155 Method of manufacturing a thin film transistor substrate and thin film transistor substrate manufactured by the same |
| 07/25/2013 | US20130187154 Oxide semiconductor device |
| 07/25/2013 | US20130187153 Semiconductor device and method for manufacturing semiconductor device |
| 07/25/2013 | US20130187152 Semiconductor device and method for manufacturing the same |
| 07/25/2013 | US20130187151 Semiconductor device |
| 07/25/2013 | US20130187150 Semiconductor device |
| 07/25/2013 | US20130187149 Thin-film transistor and method for manufacturing the same |
| 07/25/2013 | US20130187130 Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same |
| 07/25/2013 | US20130187129 Semiconductor devices fabricated by doped material layer as dopant source |
| 07/25/2013 | DE112011103483T5 Verfahren und Struktur für pFET-Übergangs-Profilmit SiGe-Kanal Method and structure for pFET transition profile as a SiGe channel |
| 07/25/2013 | DE102013201044A1 Leistungstransistor Power transistor |
| 07/25/2013 | DE102013200649A1 ESD-Schutzschaltung ESD protection circuit |
| 07/25/2013 | DE102013100683A1 Integrierte Schaltung einschliesslich Feldeffekttransistorstrukturen mit Gate- und Feldelektroden und Verfahren zum Herstellen und Betreiben einer integrierten Schaltung An integrated circuit including field-effect transistor structures with gate and field electrodes and methods of making and operating an integrated circuit |
| 07/25/2013 | DE102013100673A1 Sensorbauelement und Verfahren Sensor device and method |
| 07/25/2013 | DE102012219645A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation |
| 07/25/2013 | DE102012105738A1 Halbleiterstruktur und Verfahren zu deren Herstellung Semiconductor structure and process for their preparation |
| 07/25/2013 | DE102005005554B4 Verfahren zur Überprüfung eines Halbleitersensors für eine dynamische Grösse A method for checking a semiconductor dynamic quantity sensor |
| 07/24/2013 | EP2618380A1 Semiconductor device and manufacturing method for same |
| 07/24/2013 | EP2618367A1 Silicon etching fluid and method for producing transistor using same |
| 07/24/2013 | EP2618128A1 Detecting device, detector, and imaging apparatus using the same |
| 07/24/2013 | CN203085559U Structure in manufacturing process of low-doping-level drain TFT for AMOLED |
| 07/24/2013 | CN203085558U Gate stack structure and semiconductor device |
| 07/24/2013 | CN203085557U Semiconductor device |
| 07/24/2013 | CN203085556U Triode for physical experiment |
| 07/24/2013 | CN203085555U Semiconductor device |
| 07/24/2013 | CN203085536U Array substrate and display device |
| 07/24/2013 | CN203085533U Array substrate and display apparatus |
| 07/24/2013 | CN203084393U Array substrate and liquid crystal display panel |
| 07/24/2013 | CN103222061A 布线构造 Wiring structure |
| 07/24/2013 | CN103222060A Method for manufacturing a mos-ield effect transistor |
| 07/24/2013 | CN103222059A Method for manufacturing a mos-ield effect transistor |
| 07/24/2013 | CN103222058A Vertical DMOS field-effect transistor and method of making the same |
| 07/24/2013 | CN103222057A Semiconductor device and method for manufacturing semiconductor device |
| 07/24/2013 | CN103222056A Bipolar non-punch-hrough power semiconductor device |
| 07/24/2013 | CN103222038A Vertical FET |
| 07/24/2013 | CN103222037A Thin-film transistor substrate, display device provided with same, and method for manufacturing thin-film transistor substrate |
| 07/24/2013 | CN103219396A Aluminum alloy/chrome-silicon interlayered Schottky diode |
| 07/24/2013 | CN103219395A Multi-channel terminal structure used for semiconductor element and manufacturing method of multi-channel terminal structure |
| 07/24/2013 | CN103219394A Driver circuit and semiconductor device |
| 07/24/2013 | CN103219393A Amorphous oxide thin film for thin film transistor channel layer and manufacturing method thereof |
| 07/24/2013 | CN103219392A Thin film transistor, array substrate, manufacturing method and display device |
| 07/24/2013 | CN103219391A Thin film transistor, manufacturing method thereof, array substrate and display device |
| 07/24/2013 | CN103219390A Liquid crystal display device and electronic device |
| 07/24/2013 | CN103219389A Thin film transistor and manufacturing method thereof and array substrate and display device |
| 07/24/2013 | CN103219388A Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus |
| 07/24/2013 | CN103219387A Thin-film transistor and method for manufacturing same |
| 07/24/2013 | CN103219386A Transverse power component with high K insulating regions |
| 07/24/2013 | CN103219385A Symmetrical high-voltage MOS (Metal Oxide Semiconductor) device |
| 07/24/2013 | CN103219384A Anti-single particle radiation multi-grid device and preparation method thereof |
| 07/24/2013 | CN103219383A Enhanced N-channel isolated gate field-effect tube |
| 07/24/2013 | CN103219382A Semiconductor element, semiconductor device, and power converter |
| 07/24/2013 | CN103219381A Germanium (Ge) base tri-gate device and manufacturing method thereof |
| 07/24/2013 | CN103219380A Finfets and methods for forming the same |
| 07/24/2013 | CN103219379A High electron mobility device adopting grid first process and preparation method thereof |
| 07/24/2013 | CN103219378A Low parasitic resistance radio-frequency power device and preparation method thereof |
| 07/24/2013 | CN103219377A Radio-frequency power device for achieving asymmetrical autocollimation of source gates and drain gates and preparation method thereof |