| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/26/2013 | US20130248975 Non-volatile semiconductor memory device and its manufacturing method |
| 09/26/2013 | US20130248974 Compact three dimensional vertical nand and method of making thereof |
| 09/26/2013 | US20130248969 Nonvolatile semiconductor storage device and method of manufacture thereof |
| 09/26/2013 | US20130248967 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 09/26/2013 | US20130248966 Semiconductor device and method of manufacturing the same |
| 09/26/2013 | US20130248965 Nonvolatile semiconductor memory device |
| 09/26/2013 | US20130248964 Nonvolatile semiconductor memory device and manufacturing method thereof |
| 09/26/2013 | US20130248962 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 09/26/2013 | US20130248961 Embedded Flash Memory |
| 09/26/2013 | US20130248960 System and method of uv programming of non-volatile semiconductor memory |
| 09/26/2013 | US20130248952 Capping dielectric structure for transistor gates |
| 09/26/2013 | US20130248951 Semiconductor device and method for fabricating the same |
| 09/26/2013 | US20130248950 Semiconductor devices and method of manufacturing the same |
| 09/26/2013 | US20130248949 Integrated circuit having chemically modified spacer surface |
| 09/26/2013 | US20130248948 Source/Drain Profile for FinFET |
| 09/26/2013 | US20130248944 Junction type field effect transistor and manufacturing method thereof |
| 09/26/2013 | US20130248943 Epitaxial silicon growth |
| 09/26/2013 | US20130248942 Semiconductor device and method for manufacturing semiconductor device |
| 09/26/2013 | US20130248941 Spin transistors and memory |
| 09/26/2013 | US20130248935 Sige heterojunction bipolar transistor with a shallow out-diffused p+ emitter region |
| 09/26/2013 | US20130248934 Compound semiconductor device and manufacturing method of the same |
| 09/26/2013 | US20130248933 Nitride semiconductor device |
| 09/26/2013 | US20130248932 Manufacturing method of semiconductor device, semiconductor device, and semiconductor crystal growth substrate |
| 09/26/2013 | US20130248931 Nitride semiconductor device |
| 09/26/2013 | US20130248930 Semiconductor device and fabrication method thereof |
| 09/26/2013 | US20130248929 Reducing Source/Drain Resistance of III-V Based Transistors |
| 09/26/2013 | US20130248928 Semiconductor device having nitride layers |
| 09/26/2013 | US20130248927 Contact structure of semiconductor device |
| 09/26/2013 | US20130248926 Semiconductor device |
| 09/26/2013 | US20130248925 Power semiconductor device |
| 09/26/2013 | US20130248924 Semiconductor device |
| 09/26/2013 | US20130248923 Bi-directional switch using series connected n-type mos devices in parallel with series connected p-type mos devices |
| 09/26/2013 | US20130248886 Semiconductor device and semiconductor module |
| 09/26/2013 | US20130248885 Transistors Comprising a SiC-Containing Channel |
| 09/26/2013 | US20130248884 III-Nitride Power Device |
| 09/26/2013 | US20130248883 High performance power module |
| 09/26/2013 | US20130248882 Semiconductor device |
| 09/26/2013 | US20130248881 Semiconductor device and method for manufacturing the same |
| 09/26/2013 | US20130248880 Semiconductor device and method for manufacturing the same |
| 09/26/2013 | US20130248879 Direct growth of diamond in backside vias for gan hemt devices |
| 09/26/2013 | US20130248878 Method for manufacturing nitride semiconductor device and the same manufactured thereof |
| 09/26/2013 | US20130248876 Semiconductor device and method for producing the same |
| 09/26/2013 | US20130248874 Nitride semiconductor device |
| 09/26/2013 | US20130248873 Nitride semiconductor device and method for manufacturing same |
| 09/26/2013 | US20130248872 Semiconductor device, nitride semiconductor crystal, method for manufacturing semiconductor device, and method for manufacturing nitride semiconductor crystal |
| 09/26/2013 | US20130248871 Semiconductor device |
| 09/26/2013 | US20130248866 Thin film transistor array substrate and manufacturing method thereof |
| 09/26/2013 | US20130248861 Integrated Power Transistor Circuit Having a Current-Measuring Cell |
| 09/26/2013 | US20130248858 Interconnect structure and sputtering target |
| 09/26/2013 | US20130248855 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor |
| 09/26/2013 | US20130248853 Nucleation of iii-n on reo templates |
| 09/26/2013 | US20130248852 Thin film transistor, manufacturing method of the same and electronic equipment |
| 09/26/2013 | US20130248851 Oxide Thin Film, Methods Of Manufacturing Oxide Thin Film And Electronic Devices Including Oxide Thin Film |
| 09/26/2013 | US20130248850 Thin film transistor, display apparatus having the same, and method of manufacturing the same |
| 09/26/2013 | US20130248824 Grahene field effect transistor |
| 09/26/2013 | US20130248823 Semiconductor device including graphene layer and method of making the semiconductor device |
| 09/26/2013 | US20130248820 Gallium nitride substrate and epitaxial wafer |
| 09/26/2013 | DE112012000310T5 Silicium-Nanoröhren-Mosfet Silicon nanotube MOSFET |
| 09/26/2013 | DE112011103975T5 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelementes A semiconductor device and method of manufacturing a semiconductor device |
| 09/26/2013 | DE112011103915T5 MOS-Transistor, welcher eine Struktur von kombinierter Quelle mit niedrigem Stromverbrauch aufweist und Verfahren zu seiner Herstellung MOS transistor having a structure of a combined source with low power consumption and process for its preparation |
| 09/26/2013 | DE112011103730T5 Isolationsstrukturen mit anstossendem SOI-Übergang und Einheiten sowie Verfahren zur Herstellung Isolation structures with abutting SOI and transition units and methods of making |
| 09/26/2013 | DE112011103569T5 Verfahren zum Herstellen eines SiC-Bipolarübergangstransistors und SiC-Bipolarübergangstransistor hieraus A method of manufacturing a SiC-SiC bipolar junction transistor and Bipolarübergangstransistors thereof |
| 09/26/2013 | DE112011102518T5 Bidirektionaler, in Serie gegeneinander geschalteter, gestapelter SCR für Hochspannungs-Pin-ESD-Schutz, Verfahren zur Fertigung und Konstruktionsstrukturen Bidirectional of back-connected, stacked SCR for high voltage pin ESD protection, methods of manufacture and construction of structures |
| 09/26/2013 | DE102013205153A1 Halbleiteranordnung mit einem leistungstransistor und einem hochspannungsbauelement, die in einem gemeinsamen halbleiterkörper integriert sind A semiconductor device having a power transistor and a high voltage component-which are integrated in a common semiconductor body |
| 09/26/2013 | DE102013103099A1 Feldeffekt-Halbleitervorrichtung mit verringerten Spannungen und Verfahren zu ihrer Herstellung Field effect semiconductor device with reduced voltages and processes for their preparation |
| 09/26/2013 | DE102013103082A1 Niederspannungs-ESD-Begrenzung unter Verwendung von Hochspannungsbauelementen Low-voltage ESD limitation using high voltage components |
| 09/26/2013 | DE102013103076A1 Electro static discharge (ESD) protection circuit for electronic module, has current control element that pumps the ESD pulse current which is selectively led back into substrate of primary shunt element based on trigger signal |
| 09/26/2013 | DE102013102893A1 Ein Schaltkreisgehäuse, ein elektronisches Schaltkreisgehäuse und Verfahren zum Verkapseln eines elektronischen Schaltkreises A circuit package, an electronic circuit package and method for encapsulating an electronic circuit |
| 09/26/2013 | DE102012220822B4 Verfahren zur herstellung eines finfet und finfetstruktur mit verbesserter gate-planarität Process for the preparation of a FinFET gate and finfetstruktur with improved planarity |
| 09/26/2013 | DE102012204539A1 Power transistor e.g. vertical MOSFET, has graphene layer that is formed on source regions and is partially overlapped with the gate electrode so that ducts are formed on graphene layer |
| 09/26/2013 | DE102012105737A1 Bauelement und Verfahren zu dessen Herstellung Device and process for its preparation |
| 09/26/2013 | DE102012105457B3 Layer system for manufacturing transparent electrode used in e.g. solar cell, has conductive oxide layer including surface structures with average height, which is larger is than average height of structures of base layer around factor |
| 09/26/2013 | DE102012006076A1 Strip-shaped pulse load FET for controlling pyrotechnic igniter, has group traces formed with different geometric cross-sectional dimensions such that high resistance between source terminal box and source regions is ensured |
| 09/26/2013 | DE102008044408B4 Halbleiterbauelementanordnung mit niedrigem Einschaltwiderstand Semiconductor device assembly with low on-resistance |
| 09/25/2013 | EP2642520A2 Embedded flash memory |
| 09/25/2013 | EP2642514A1 Silicon carbide semiconductor device |
| 09/25/2013 | EP2642341A2 Manufacturing method of an apparatus for the processing of single molecules |
| 09/25/2013 | EP2641331A1 Method and circuit for switching a memristive device |
| 09/25/2013 | EP2641330A1 Method and circuit for switching a memristive device in an array |
| 09/25/2013 | EP2641272A1 Perforated contact electrode on vertical nanowire array |
| 09/25/2013 | EP2641271A1 STRUCTURE AND METHOD FOR Vt TUNING AND SHORT CHANNEL CONTROL WITH HIGH K/METAL GATE MOSFETs |
| 09/25/2013 | CN203218269U Thin film transistor, array substrate and display device |
| 09/25/2013 | CN203218259U Ultra-fast recovery high-voltage diode |
| 09/25/2013 | CN1914626B 半导体器件 Semiconductor devices |
| 09/25/2013 | CN103329276A Method for manufacturing nitride semiconductor element |
| 09/25/2013 | CN103329275A Thin film semiconductor device and method for manufacturing same |
| 09/25/2013 | CN103329274A Selective germanium P-contact metalization through trench |
| 09/25/2013 | CN103329273A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 09/25/2013 | CN103329268A Semiconductor device and manufacturing method therefor |
| 09/25/2013 | CN103329255A Method for manufacturing reverse-blocking semiconductor element |
| 09/25/2013 | CN103325846A Valley gutter Schottky barrier rectification element and manufacturing method thereof |
| 09/25/2013 | CN103325845A 肖特基位障二极管及其制造方法 The method of manufacturing a Schottky diode barrier bits |
| 09/25/2013 | CN103325844A Thin-film resistor structure |
| 09/25/2013 | CN103325843A Junction type field effect transistor and manufacturing method thereof |
| 09/25/2013 | CN103325842A Oxide semiconductor thin film and thin film transistor |
| 09/25/2013 | CN103325841A Thin-film transistor and manufacturing method and display device thereof |
| 09/25/2013 | CN103325840A Thin-film transistor and preparation method thereof |
| 09/25/2013 | CN103325839A MOS super barrier rectifier device and manufacturing method thereof |
| 09/25/2013 | CN103325838A Power semiconductor chip and manufacturing method thereof |
| 09/25/2013 | CN103325837A Carbon-based field effect transistor and preparing method thereof |