| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/25/2013 | CN103325836A Grapheme field effect transistor and preparation method thereof |
| 09/25/2013 | CN103325835A SOI power LDMOS device provided with junction type field plate |
| 09/25/2013 | CN103325834A Transistor and method for forming channel length of transistor |
| 09/25/2013 | CN103325833A FET and semiconductor device and integrated circuit device comprising the same |
| 09/25/2013 | CN103325832A FINFET with metal gate stressor |
| 09/25/2013 | CN103325831A Source/drain profile for FinFET |
| 09/25/2013 | CN103325830A 半导体装置 Semiconductor device |
| 09/25/2013 | CN103325829A Semiconductor device and manufacturing method of the same |
| 09/25/2013 | CN103325828A Nitride semiconductor device |
| 09/25/2013 | CN103325827A 半导体装置 Semiconductor device |
| 09/25/2013 | CN103325826A Semiconductor structure and manufacturing method thereof |
| 09/25/2013 | CN103325825A Super junction MOSFET |
| 09/25/2013 | CN103325824A Semiconductor device and method of manufacturing the same |
| 09/25/2013 | CN103325823A Compound semiconductor device and method for manufacturing the same |
| 09/25/2013 | CN103325822A Compound semiconductor device and method for manufacturing the same |
| 09/25/2013 | CN103325821A Insulated gate bipolar bidirectional selectable power tube |
| 09/25/2013 | CN103325820A Double-gate SOI-LIGBT device with P-type buried layer |
| 09/25/2013 | CN103325819A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 09/25/2013 | CN103325818A Semiconductor device and method for manufacturing the same |
| 09/25/2013 | CN103325817A Thin film transistor, manufacturing method of the same and electronic equipment |
| 09/25/2013 | CN103325816A High-voltage semiconductor component |
| 09/25/2013 | CN103325792A Array substrate, preparation method and display device |
| 09/25/2013 | CN103325790A 只读记忆体及其制造方法 Read-only memory and manufacturing method |
| 09/25/2013 | CN103325786A 半导体装置 Semiconductor device |
| 09/25/2013 | CN103325780A Power integrated circuit |
| 09/25/2013 | CN103325768A Integrated power transistor circuit having current-measuring cell and manufacturing method thereof |
| 09/25/2013 | CN103325737A Method of manufacturing semiconductor device |
| 09/25/2013 | CN103325735A Method for forming diffusion resistance in integrated circuit isolation region |
| 09/25/2013 | CN103325688A Method for forming channel of thin film transistor and compensating circuit |
| 09/25/2013 | CN103325685A Deep groove power semiconductor field effect transistor and manufacturing method thereof |
| 09/25/2013 | CN103325684A Semiconductor structure and method for manufacturing semiconductor structure |
| 09/25/2013 | CN103325683A Fin field effect transistor and technology thereof |
| 09/25/2013 | CN103325681A Super-junction MOSFET with ions injected in self-aligned mode and manufacturing method thereof |
| 09/25/2013 | CN103325680A Method for improving radiation resistance of integrated circuit bipolar type audion |
| 09/25/2013 | CN103325677A Method for preparing polar c surface GaN-base semiconductor device with SiNx inserting layer |
| 09/25/2013 | CN103325670A Metal gate semiconductor device |
| 09/25/2013 | CN103325669A Shield plate, method for manufacturing a semiconductor device, and semiconductor device |
| 09/25/2013 | CN102479263B Large-signal equivalent circuit model of Schottky varactor and parameter extracting method thereof |
| 09/25/2013 | CN102446957B Structure of heterojunction field effect transistor and fabrication method thereof |
| 09/25/2013 | CN102427086B III-nitride enhanced-mode metal-insulator-semiconductor high electron mobility transistor (MISHEMT) device |
| 09/25/2013 | CN102403349B III nitride MISHEMT device |
| 09/25/2013 | CN102376780B Silicon pedestal with embedded high density capacitor |
| 09/25/2013 | CN102376763B Semiconductor assembly |
| 09/25/2013 | CN102364688B Vertical double-diffusion metal oxide semiconductor field effect transistor (MOSFET) |
| 09/25/2013 | CN102280479B Semiconductor device and fabrication method therefor |
| 09/25/2013 | CN102244093B Structure and method of reducing transverse diffusion width of p-n junction isolation diffusion |
| 09/25/2013 | CN102217070B Semiconductor device and method for producing same |
| 09/25/2013 | CN102197487B Insulated gate bipolar transistor (IGBT), and method of manufacturing same |
| 09/25/2013 | CN102132399B 半导体装置 Semiconductor device |
| 09/25/2013 | CN102036918B Dielectric film, dielectric element, and process for producing the dielectric element |
| 09/25/2013 | CN102034875B Junction field effect transistor |
| 09/25/2013 | CN102007586B Thin film transistor and method for manufacturing the same |
| 09/25/2013 | CN101910050B Nanowire growth on dissimilar material |
| 09/25/2013 | CN101681885B 半导体器件 Semiconductor devices |
| 09/25/2013 | CN101651104B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 09/24/2013 | US8542338 In-plane switching mode liquid crystal display device including multi-layer electrode |
| 09/24/2013 | US8541893 Semiconductor memory device and power line arrangement method thereof |
| 09/24/2013 | US8541886 Integrated circuit packaging system with via and method of manufacture thereof |
| 09/24/2013 | US8541885 Technique for enhancing transistor performance by transistor specific contact design |
| 09/24/2013 | US8541884 Through-substrate via having a strip-shaped through-hole signal conductor |
| 09/24/2013 | US8541883 Semiconductor device having shielded conductive vias |
| 09/24/2013 | US8541880 Method and system to reduce area of standard cells |
| 09/24/2013 | US8541872 Integrated circuit package system with package stacking and method of manufacture thereof |
| 09/24/2013 | US8541866 Nonvolatile semiconductor memory device and method for manufacturing same |
| 09/24/2013 | US8541865 Semiconductor device with improved ESD protection |
| 09/24/2013 | US8541864 Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture |
| 09/24/2013 | US8541862 Semiconductor device with self-biased isolation |
| 09/24/2013 | US8541855 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications |
| 09/24/2013 | US8541853 High frequency CMUT |
| 09/24/2013 | US8541852 Acoustic sensor |
| 09/24/2013 | US8541850 Method and system for forming resonators over CMOS |
| 09/24/2013 | US8541848 High-voltage MOSFETs having current diversion region in substrate near fieldplate |
| 09/24/2013 | US8541846 Semiconductor device |
| 09/24/2013 | US8541844 Semiconductor device and manufacturing method thereof |
| 09/24/2013 | US8541843 Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same |
| 09/24/2013 | US8541839 Semiconductor component and method for producing it |
| 09/24/2013 | US8541838 Monolithically-integrated dual surge protective device |
| 09/24/2013 | US8541837 Semiconductor field effect power switching device |
| 09/24/2013 | US8541836 Recessed access device for a memory |
| 09/24/2013 | US8541835 Schottky FET fabricated with gate last process |
| 09/24/2013 | US8541834 Semiconductor device and method for manufacturing same |
| 09/24/2013 | US8541833 Power transistor device vertical integration |
| 09/24/2013 | US8541832 Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same |
| 09/24/2013 | US8541831 Nonvolatile memory device and method for fabricating the same |
| 09/24/2013 | US8541830 Nonvolatile semiconductor memory device and method for manufacturing the same |
| 09/24/2013 | US8541829 Nonvolatile semiconductor memory and fabrication method for the same |
| 09/24/2013 | US8541828 Methods for depositing high-K dielectrics |
| 09/24/2013 | US8541827 Semiconductor memory device including multi-layer gate structure |
| 09/24/2013 | US8541824 Electronic devices and systems, and methods for making and using the same |
| 09/24/2013 | US8541823 Field effect transistor |
| 09/24/2013 | US8541822 Semiconductor device and method for producing the same |
| 09/24/2013 | US8541821 Method of forming a non-volatile electron storage memory and the resulting device |
| 09/24/2013 | US8541818 Semiconductor heterostructure diodes |
| 09/24/2013 | US8541817 Multilayer barrier III-nitride transistor for high voltage electronics |
| 09/24/2013 | US8541815 High electron mobility transistor circuit |
| 09/24/2013 | US8541812 Semiconductor device and method of manufacture thereof |
| 09/24/2013 | US8541810 Blue light emitting semiconductor nanocrystal materials |
| 09/24/2013 | US8541807 Semiconductor light emitting device and light emitting apparatus having the same |
| 09/24/2013 | US8541792 Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same |
| 09/24/2013 | US8541787 High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |