| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/02/2014 | US20140001544 Method for manufacturing semiconductor device and semiconductor device |
| 01/02/2014 | US20140001543 Integrated circuit device with metal gates including diffusion barrier layers and fabricating methods thereof |
| 01/02/2014 | US20140001542 Passivation of carbon nanotubes with molecular layers |
| 01/02/2014 | US20140001541 Transistor with recess gate and method for fabricating the same |
| 01/02/2014 | US20140001540 Integrated semiconductor device and fabrication method |
| 01/02/2014 | US20140001539 Insulated gate semiconductor device |
| 01/02/2014 | US20140001538 Dielectric stack |
| 01/02/2014 | US20140001537 Self-aligned si rich nitride charge trap layer isolation for charge trap flash memory |
| 01/02/2014 | US20140001536 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element |
| 01/02/2014 | US20140001535 Non-Volatile Memory Structure Containing Nanodots and Continuous Metal Layer Charge Traps and Method of Making Thereof |
| 01/02/2014 | US20140001534 Apparatus and method for rounded ono formation in a flash memory device |
| 01/02/2014 | US20140001533 NAND Memory Device Containing Nanodots and Method of Making Thereof |
| 01/02/2014 | US20140001532 Semiconductor device and method for manufacturing same |
| 01/02/2014 | US20140001531 Damascene non-volatile memory cells and methods for forming the same |
| 01/02/2014 | US20140001530 Nonvolatile memory device, fabrication method thereof and memory system comprising the same |
| 01/02/2014 | US20140001529 Silicide Process Using OD Spacers |
| 01/02/2014 | US20140001528 Semiconductor component with a drift region and a drift control region |
| 01/02/2014 | US20140001525 Semiconductor memory device and method of manufacturing the same |
| 01/02/2014 | US20140001520 Contact resistance reduced p-mos transistors employing ge-rich contact layer |
| 01/02/2014 | US20140001519 Preventing isolation leakage in iii-v devices |
| 01/02/2014 | US20140001516 Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material |
| 01/02/2014 | US20140001514 Semiconductor Device and Method for Producing a Doped Semiconductor Layer |
| 01/02/2014 | US20140001513 Layer system of a silicon-based support and a heterostructure applied directly onto the support |
| 01/02/2014 | US20140001512 Semiconductor Device and Power Conversion Apparatus Using the Same |
| 01/02/2014 | US20140001490 Schottky-barrier device with locally planarized surface and related semiconductor product |
| 01/02/2014 | US20140001489 Double-recessed trench schottky barrier device |
| 01/02/2014 | US20140001488 Electronic Device Including Silicon Carbide Diode Dies |
| 01/02/2014 | US20140001487 Semiconductor device manufacturing method and semiconductor device |
| 01/02/2014 | US20140001486 Composite semidconductor substrate, semiconductor device, and manufacturing method |
| 01/02/2014 | US20140001485 Glass-ceramic substrates for semiconductor processing |
| 01/02/2014 | US20140001479 Switching device with charge distribution structure |
| 01/02/2014 | US20140001478 Group iii-nitride transistor using a regrown structure |
| 01/02/2014 | US20140001476 Semiconductor device and manufacturing method thereof |
| 01/02/2014 | US20140001475 Manufacturing method of array substrate, array substrate and lcd device |
| 01/02/2014 | US20140001472 Silicon carbide semiconductor device and method of fabricating same |
| 01/02/2014 | US20140001470 Semiconductor device |
| 01/02/2014 | US20140001469 Thin-film transistor and zinc oxide-based sputtering target for the same |
| 01/02/2014 | US20140001468 Semiconductor device and method for manufacturing semiconductor device |
| 01/02/2014 | US20140001467 Semiconductor device |
| 01/02/2014 | US20140001466 Semiconductor device |
| 01/02/2014 | US20140001465 Semiconductor device |
| 01/02/2014 | US20140001464 Oxynitride channel layer, transistor including the same and method of manufacturing the same |
| 01/02/2014 | US20140001462 High mobility stabile metal oxide tft |
| 01/02/2014 | US20140001441 Integration methods to fabricate internal spacers for nanowire devices |
| 01/02/2014 | US20140001440 Dielectric for carbon-based nano-devices |
| 01/02/2014 | US20140001439 Graded Aluminum-Gallium-Nitride and Superlattice Buffer Layer for III-V Nitride Layer on Silicon Substrate |
| 01/02/2014 | US20140001438 Semiconductor devices and methods of manufacturing the same |
| 01/02/2014 | US20140001437 Joined nanostructures and methods therefor |
| 01/02/2014 | US20140001436 Nanocrystals with high extinction coefficients and methods of making and using such nanocrystals |
| 01/02/2014 | US20140001433 Methods for passivating a carbonic nanolayer |
| 01/02/2014 | US20140001432 Applications for nanopillar structures |
| 01/02/2014 | US20140001363 Schottky barrier diode and apparatus using the same |
| 01/02/2014 | US20140000377 Semiconductor package with air pressure sensor |
| 01/02/2014 | DE112012001271T5 Halbleitersensor zur Erfassung einer physikalischen Größe A semiconductor sensor for detecting a physical quantity |
| 01/02/2014 | DE112012000753T5 Strukturen für den Übergangsabschluss einschliesslich Verlängerungen des Schutzrings und Verfahren des Herstellens elektronischer Bauelemente, welche selbige umfassen Structures for the transition completion including extensions of the guard ring and method of manufacturing electronic components which comprise selbige |
| 01/02/2014 | DE112011105130T5 Verfahren zum Herstellen von elektronischen Nitrid-Bauelementen A method of manufacturing of electronic components nitride |
| 01/02/2014 | DE112011105029T5 Halbleitervorrichtung Semiconductor device |
| 01/02/2014 | DE112006000651B4 Vertikale Speichervorrichtung und Verfahren Vertical Storage Apparatus and Method |
| 01/02/2014 | DE102013212787A1 Halbleiterbauelement und verfahren zum herstellen einer dotierten halbleiterschicht A semiconductor device and method of manufacturing a doped semiconductor layer |
| 01/02/2014 | DE102013212561A1 Halbleitervorrichtung und Leistungsumsetzungsvorrichtung, die sie verwendet Semiconductor device and power conversion device that uses them |
| 01/02/2014 | DE102013106902A1 Superjunction-Halbleitervorrichtung mit einem Zellgebiet und einem Randgebiet Superjunction semiconductor device having a cell region and a peripheral area |
| 01/02/2014 | DE102013106795A1 Halbleitervorrichtung mit einem Randgebiet und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device having a peripheral area and methods of manufacturing a semiconductor device |
| 01/02/2014 | DE102013106683A1 Halbleitervorrichtungen und Verfahren zur Herstellung derselben Semiconductor devices and methods of manufacturing the same |
| 01/02/2014 | DE102013106667A1 Halbleiterbauelemente und Halbleiterstrukturen Semiconductor devices and semiconductor structures |
| 01/02/2014 | DE102013010487A1 Gruppe III-Nitrid-Transistor unter Verwendung einer wiederaufgewachsenen Struktur Group III-nitride transistor using a re-grown structure |
| 01/02/2014 | DE102013010187A1 Schottky-Barriere-Vorrichtung mit lokal planarisierter Oberfläche und zugehöriges Halbleitererzeugnis Schottky barrier device with locally planarized surface and related semiconductor product |
| 01/02/2014 | DE102012205662B4 MOS-Halbleitervorrichtung und Verfahren zu deren Herstellung MOS semiconductor device and process for their preparation |
| 01/02/2014 | DE102012105809A1 Optoelectronic component e.g. solar cell, has counter electrode that is provided with main layer and interlayer, and photoactive layer system which is provided between counter electrode and main electrodes |
| 01/02/2014 | DE102008064779B3 Halbleitervorrichtung Semiconductor device |
| 01/02/2014 | DE102008064778B3 Halbleitervorrichtung Semiconductor device |
| 01/02/2014 | DE102008059984B4 Verfahren zum Herstellen von einer Siliziumkarbid-Halbleitervorrichtung A method for producing a silicon carbide semiconductor device |
| 01/01/2014 | EP2680312A2 High breakdown voltage LDMOS device |
| 01/01/2014 | EP2680311A1 Tunnel-effect transistor |
| 01/01/2014 | EP2680302A1 Integrated circuit |
| 01/01/2014 | EP2680300A2 Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
| 01/01/2014 | EP2680299A2 Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof |
| 01/01/2014 | EP2679592A1 Novel heterocyclic compound, method for producing intermediate therefor, and use thereof |
| 01/01/2014 | EP2678883A1 Electronic component and process for fabricating and using graphene in an electronic component |
| 01/01/2014 | CN203377216U 半导体装置 Semiconductor device |
| 01/01/2014 | CN203377215U Extremely-thick epitaxial wafer for high-voltage power device |
| 01/01/2014 | CN103493210A Thin film transistor structure, and thin film transistor and display device provided with said structure |
| 01/01/2014 | CN103493209A Thin film transistor structure, and thin film transistor and display device provided with said structure |
| 01/01/2014 | CN103493208A Semiconductor device and method for producing same |
| 01/01/2014 | CN103493207A High-voltage semiconductor device |
| 01/01/2014 | CN103493206A III-N device structures and methods |
| 01/01/2014 | CN103493205A 肖特基二极管 Schottky diodes |
| 01/01/2014 | CN103493204A Structures and methods relating to graphene |
| 01/01/2014 | CN103493203A Transistor device and materials for making the same |
| 01/01/2014 | CN103493188A Normally-off heterojunction field-effect transistor |
| 01/01/2014 | CN103493187A 薄膜晶体管 Thin film transistor |
| 01/01/2014 | CN103493186A Thin film transistor array manufacturing method, thin film transistor array and display device |
| 01/01/2014 | CN103493140A Method for driving semiconductor storage device |
| 01/01/2014 | CN103492939A 液晶显示面板 The liquid crystal display panel |
| 01/01/2014 | CN103489928A Capacitor structure and manufacturing method thereof |
| 01/01/2014 | CN103489927A Quick-soft-recovery power switch diode and manufacturing method thereof |
| 01/01/2014 | CN103489926A 半导体器件 Semiconductor devices |
| 01/01/2014 | CN103489925A Semiconductor device and method for manufacturing same |
| 01/01/2014 | CN103489924A Low-capacitance JFET device and manufacturing method thereof |
| 01/01/2014 | CN103489923A Film transistor as well as manufacturing method and repairation method thereof and array substrate |
| 01/01/2014 | CN103489922A Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device |