Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2003
07/08/2003US6589821 Methods of forming thin film transistors
07/08/2003US6589336 Production method for silicon epitaxial wafer and silicon epitaxial wafer
07/08/2003US6588232 Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device
07/03/2003WO2003054976A1 Boron phosphide-based semiconductor device and production method thereof
07/03/2003WO2003054972A1 Variable capacitor and its manufacturing method
07/03/2003WO2003054971A1 Zener diode, zener diode circuit and method for production of a zener diode
07/03/2003WO2003054970A1 Organic field effect transistor with off-set threshold voltage and the use thereof
07/03/2003WO2003054969A1 Electrically programmed mos transistor source/drain series resistance
07/03/2003WO2003054968A1 Body-tied silicon on insulator semiconductor device and method therefor
07/03/2003WO2003054966A1 Soi device with different silicon thicknesses
07/03/2003WO2003054965A2 Non-volatile memory and method of forming thereof
07/03/2003WO2003054964A2 Monos device having buried metal silicide bit line
07/03/2003WO2003054963A1 Fabrication of non-volatile memory cell
07/03/2003WO2003054962A1 Complementary mis device
07/03/2003WO2003054952A1 Composite spacer liner for improved transistor performance
07/03/2003WO2003054951A1 Semiconductor device comprising a thin oxide liner and method of manufacturing the same
07/03/2003WO2003054950A1 High voltage mos transistor
07/03/2003WO2003054948A1 Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layer
07/03/2003WO2003054942A2 Method of introducing nitrogen into semiconductor dielectric layers
07/03/2003WO2003053847A2 Family of discretely sized silicon nanoparticles and method for producing the same
07/03/2003WO2003053673A1 Semiconductor with coordinatively irregular structures
07/03/2003WO2003032398A3 Field effect transistor having periodically doped channel
07/03/2003WO2003028125A3 Substituted pentacene semiconductors
07/03/2003WO2002035580A3 Three-terminal field-controlled molecular devices
07/03/2003US20030124877 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
07/03/2003US20030124871 Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
07/03/2003US20030124863 Method of forming insulating layer and method of fabricating thin film transistor using the same
07/03/2003US20030124826 Method of manufacturing a transistor in a semiconductor device
07/03/2003US20030124825 Method of forming a gate electrode in a semiconductor device
07/03/2003US20030124823 System for reducing segregation and diffusion of halo implants into highly doped regions
07/03/2003US20030124810 Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
07/03/2003US20030124809 Method of forming an oxide film with resistance to erosion caused by stripper
07/03/2003US20030124808 System for reducing silicon-consumption through selective deposition
07/03/2003US20030124806 Method of fabricating semiconductor device
07/03/2003US20030124804 Method for fabricating a semiconductor device
07/03/2003US20030124803 Non-volatile semiconductor memory and process of fabricating the same
07/03/2003US20030124801 Method for fabricating flash memory cell
07/03/2003US20030124800 Method of forming a floating gate in a flash memory device
07/03/2003US20030124794 Electronic component incorporating an integrated circuit and planar microcapacitor
07/03/2003US20030124793 Method of manufacturing semiconductor device
07/03/2003US20030124789 Semiconductor light-emitting device and manufacturing method thereof
07/03/2003US20030124786 Method of manufacturing acceleration sensor
07/03/2003US20030124783 System for creating ultra-shallow dopant profiles
07/03/2003US20030124782 Insulated gate semiconductor device and process for fabricating the same
07/03/2003US20030124781 Method for manufacturing thin film transistors
07/03/2003US20030124780 Thermally stable nickel germanosilicide formed on SiGe
07/03/2003US20030124779 Fabricating method of polycrystalline silicon thin film transistor
07/03/2003US20030124778 Thin film transistor device and method of manufacturing the same, and liquid crystal display device
07/03/2003US20030124777 Method of fabricating mask ROM
07/03/2003US20030124755 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device
07/03/2003US20030124751 Semiconductor memory and manufacturing method of the same
07/03/2003US20030124741 Serine substituted gold inserted apoferritin; transport proteins; for use in producing semiconductors
07/03/2003US20030124394 Multilayer structure used especially as a material of high relative permittivity
07/03/2003US20030123829 Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
07/03/2003US20030123308 Fast program to program verify method
07/03/2003US20030123307 Non-volatile memory device and a method of fabricating the same
07/03/2003US20030123296 Nonvolatile semiconductor memory device and data erase method therefor
07/03/2003US20030123294 Sensing circuit in a multi-level flash memory cell
07/03/2003US20030123293 Fast program to program verify method
07/03/2003US20030123292 Fast program to program verify method
07/03/2003US20030123291 Fast program to program verify method
07/03/2003US20030123290 Fast program to program verify method
07/03/2003US20030123285 Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell
07/03/2003US20030122264 Bond out chip and method for making same
07/03/2003US20030122222 Semiconductor device having vertical metal insulator semiconductor transistor and method of manufacturing the same
07/03/2003US20030122214 High performance PD SOI tunneling-biased mosfet
07/03/2003US20030122212 Semiconductor circuit arrangement and a method for producing same
07/03/2003US20030122211 Bidirectional static switch responsive in quadrants Q4 and Q1
07/03/2003US20030122208 Spin valve transistor
07/03/2003US20030122204 Nonvolatile semiconductor storage and method for manufacturing the same
07/03/2003US20030122203 Semiconductor device and method of manufacturing the same
07/03/2003US20030122202 Semiconductor device, and method for manufacturing the same
07/03/2003US20030122199 Semiconductor device and fabricating method for the same
07/03/2003US20030122197 Field emission device
07/03/2003US20030122196 Poly-crystalline thin film transistor and fabrication method thereof
07/03/2003US20030122195 Lateral high breakdown voltage MOSFET and device provided therewith
07/03/2003US20030122194 Semiconductor device and method for forming the same
07/03/2003US20030122189 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
07/03/2003US20030122188 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation
07/03/2003US20030122187 Vertical transistor and method of manufacturing thereof
07/03/2003US20030122186 Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
07/03/2003US20030122185 Self aligned method of forming a semiconductor memory array of floating gate memory cells with horizontally oriented edges, and a memory array thereby
07/03/2003US20030122184 Flash EEPROM cell and method for fabricating the same
07/03/2003US20030122183 Method for manufacturing flash memory cell
07/03/2003US20030122182 Floating gate field-effect transistor
07/03/2003US20030122180 Nonvolatile semiconductor memory device and method for fabricating the same
07/03/2003US20030122179 Method of manufacturing a field effect transistor having a two-layered gate electrode
07/03/2003US20030122178 Method for fabricating a flash memory having a T-shaped floating gate
07/03/2003US20030122177 Enhanced eprom structures with accentuated hot electron generation regions
07/03/2003US20030122167 Semiconductor device
07/03/2003US20030122166 Phase change material memory device
07/03/2003US20030122165 TFT type optical detecting sensor implementing different TFTs and the fabricating method thereof
07/03/2003US20030122164 Semiconductor device and its manufacturing method
07/03/2003US20030122163 Semiconductor device
07/03/2003US20030122158 Electro-optical device and electronic equipment
07/03/2003US20030122157 Electro-optical device and electronic equipment
07/03/2003US20030122156 Programmable resistance memory element and method for making same
07/03/2003US20030122155 Semiconductor device applied to a variable capacitance capacitor and amplifier
07/03/2003US20030122154 Lateral heterojunction bipolar transistor
07/03/2003US20030122153 High frequency semiconductor device
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