Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2003
07/15/2003US6593618 MIS semiconductor device having an elevated source/drain structure
07/15/2003US6593609 Semiconductor memory device
07/15/2003US6593604 Electrical and electronic apparatus comprising multilayer emitters and electrodes, used for power amplification
07/15/2003US6593603 Pseudomorphic high electron mobility transistor power device
07/15/2003US6593600 Responsive bidirectional static switch
07/15/2003US6593594 Silicon carbide n-channel power LMOSFET
07/15/2003US6593592 Semiconductor device having thin film transistors
07/15/2003US6593591 Thin film device provided with coating film, liquid crystal panel and electronic device, and method the thin film device
07/15/2003US6593589 Semiconductor nitride structures
07/15/2003US6593450 2,7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers
07/15/2003US6593235 Semiconductor device with a tapered hole formed using multiple layers with different etching rates
07/15/2003US6593229 Semiconductor integrated circuit device and method for manufacturing the same
07/15/2003US6593219 Method for fabricating electrode structure and method for fabricating semiconductor device
07/15/2003US6593217 Method of manufacturing semiconductor device
07/15/2003US6593216 Method for producing semiconductor device
07/15/2003US6593215 Method of manufacturing crystalline semiconductor material and method of manufacturing semiconductor device
07/15/2003US6593198 Semiconductor device and method for fabricating the same
07/15/2003US6593196 Methods of forming a transistor gate
07/15/2003US6593195 Stable memory device that utilizes ion positioning to control state of the memory device
07/15/2003US6593194 Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same
07/15/2003US6593193 Semiconductor device and method for fabricating the same
07/15/2003US6593192 Method of forming a dual-gated semiconductor-on-insulator device
07/15/2003US6593191 Buried channel strained silicon FET using a supply layer created through ion implantation
07/15/2003US6593189 Semiconductor memory reducing current consumption and narrow channel effect and method of manufacturing the same
07/15/2003US6593187 Method to fabricate a square poly spacer in flash
07/15/2003US6593186 Method for manufacturing non-volatile semiconductor memory device
07/15/2003US6593184 Semiconductor device with stacked memory and logic substrates and method for fabricating the same
07/15/2003US6593181 Tailored insulator properties for devices
07/15/2003US6593177 Self aligned method of forming a semiconductor memory array of floating gate memory cells, and a memory array made thereby
07/15/2003US6593176 Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
07/15/2003US6593175 Method of controlling a shape of an oxide layer formed on a substrate
07/15/2003US6593174 Field effect transistor having dielectrically isolated sources and drains and method for making same
07/15/2003US6593166 Method for construction of nanotube matrix material
07/15/2003US6593161 System and method for cleaning ozone oxidation
07/15/2003US6593158 Semiconductor memory and manufacturing method of the same
07/15/2003US6592777 Manufacture and cleaning of a semiconductor
07/15/2003US6592771 Vapor-phase processing method and apparatus therefor
07/15/2003US6591689 Sensor held by base having lead
07/15/2003US6591678 Semiconductor dynamic quantity sensor for detecting dynamic quantity in two axes with X-shaped mass portion
07/15/2003CA2126446C Single crystal silicon arrayed devices for projection displays
07/10/2003WO2003056641A1 Self-aligned printing
07/10/2003WO2003056640A1 Transistor and display device including the transistor
07/10/2003WO2003056631A1 Voltage-controlled bidirectional switch
07/10/2003WO2003056630A2 Transistor
07/10/2003WO2003056629A1 Wide bandgap bipolar transistors
07/10/2003WO2003056628A1 Negative differential resistance field effect transistor (ndr-fet) & circuits using the same
07/10/2003WO2003056627A2 Semiconductor apparatus
07/10/2003WO2003056622A1 Substrate treating method and production method for semiconductor device
07/10/2003WO2003056616A1 A chemistry for etching quaternary interface layers on ingaasp mostly formed between gaas and inxga(1-x)p layers
07/10/2003WO2003056613A1 Semiconductor device and method for fabricating the same
07/10/2003WO2003056561A1 Memory cell utilizing negative differential resistance field-effect transistors
07/10/2003WO2003056385A1 A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same
07/10/2003WO2003056322A1 Fet sensor with a specially configured gate electrode for the highly sensitive detection of analytes
07/10/2003WO2003055793A1 A method for manufacturing a nanostructure in-situ, and in-situ manufactured nanostructure devices
07/10/2003WO2003032367A3 Fabrication of an electrically conductive silicon carbide article
07/10/2003WO2003007399A3 Low melting point polymer alignment
07/10/2003US20030129845 Methods for reducing the curvature in boron-doped silicon micromachined structures
07/10/2003US20030129844 Method for forming openings in low dielectric constant material layer
07/10/2003US20030129842 Method for forming openings in low dielectric constant material layer
07/10/2003US20030129833 Electrode forming method and field effect transistor
07/10/2003US20030129826 Graded thin films
07/10/2003US20030129820 Co-implantation of group VI elements and N for formation of non-alloyed Ohmic contacts for n-type semiconductors
07/10/2003US20030129818 Masking member for forming fine electrode and manufacturing method therefor, method for forming electrode, and field effect transistor
07/10/2003US20030129817 Anneal sequence for high-k film property optimization
07/10/2003US20030129814 Method of manufacturing semiconductor device
07/10/2003US20030129812 Vertical power component manufacturing method
07/10/2003US20030129804 Process for reducing dopant loss for semiconductor devices
07/10/2003US20030129802 Silicon germanium heterojunction bipolar transistor with carbon incorporation
07/10/2003US20030129795 Novel metal-gate electrode for CMOS transistor applications
07/10/2003US20030129793 Novel metal-gate electrode for CMOS transistor applications
07/10/2003US20030129792 Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit
07/10/2003US20030129791 Semiconductor device and manufacturing method thereof
07/10/2003US20030129788 Compound semiconductor device
07/10/2003US20030129446 Multilayer structure used especially as a material of high relative permittivity
07/10/2003US20030129374 Self-aligned micro hinges
07/10/2003US20030129311 Meso-porous or macro- porous polymer film template is accomplished by a novel self-assembly mecahnism of moisture condensation-induced bubble formation
07/10/2003US20030128919 Device integrated antenna for use in resonant and non-resonant modes and method
07/10/2003US20030128618 Flash EEprom system
07/10/2003US20030128588 Fast program to program verify method
07/10/2003US20030128586 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
07/10/2003US20030128584 Non-volatile semiconductor memory device
07/10/2003US20030128582 Non-volatile memory and semiconductor device
07/10/2003US20030128323 Active-matrix addressing liquid-crystal display device using lateral electric field
07/10/2003US20030128322 Liquid crystal display device
07/10/2003US20030128178 Electro-optical device and electronic apparatus
07/10/2003US20030127745 Low capacitance wiring layout and method for making same
07/10/2003US20030127744 Low electrical resistance, smoothness, high strength, stress resistance
07/10/2003US20030127722 Semiconductor device and method for fabricating the same
07/10/2003US20030127712 Semiconductor device
07/10/2003US20030127709 Semiconductor device and production process
07/10/2003US20030127707 Bipolar transistor and method of manufacturing the same
07/10/2003US20030127702 Semiconductor containing channel barriers; prevent surface leakage
07/10/2003US20030127700 High speed electron tunneling device and applications
07/10/2003US20030127697 Semiconductor device
07/10/2003US20030127696 Semiconductor device having contact of Si-Ge combined with cobalt silicide
07/10/2003US20030127695 Semiconductor device and method for manufacturing the same
07/10/2003US20030127694 Higher voltage transistors for sub micron CMOS processes
07/10/2003US20030127693 Edge termination for silicon power devices
07/10/2003US20030127692 Strongly textured atomic ridge and dot MOSFETs, sensors and filters
07/10/2003US20030127691 Varactor with improved tuning range
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