Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2004
07/01/2004US20040124488 Semiconductor device
07/01/2004US20040124484 Spin-tunnel transistor and magnetic reproducing head
07/01/2004US20040124480 Thin film transistor with LDD/offset structure
07/01/2004US20040124479 Semiconductor device and process for manufacturing the same
07/01/2004US20040124478 Semiconductor device
07/01/2004US20040124477 Capacitors; lower electrode over isolation zones; dielectric film then upper electrode
07/01/2004US20040124476 Semiconductor device and method of manufacturing the same
07/01/2004US20040124474 Semiconductor device and sustaining circuit
07/01/2004US20040124471 Semiconductor device
07/01/2004US20040124470 Wafer Bonding Method Of Forming Silicon-On-Insulator Comprising Integrated Circuitry
07/01/2004US20040124469 Semiconductor device and method for manufacturing the same
07/01/2004US20040124467 Method and structure to decrease area capacitance within a buried insulator device
07/01/2004US20040124465 Super-junction semiconductor device and method of manufacturing the same
07/01/2004US20040124464 Power semiconductor device having semiconductor-layer-forming position controlled by ion implantation without using photoresist pattern, and method of manufacturing such power semiconductor device
07/01/2004US20040124463 Semiconductor integrated circuit device
07/01/2004US20040124462 Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral rf mos devices
07/01/2004US20040124461 Trench-gate semiconductor devices, and their manufacture
07/01/2004US20040124460 Stack gate electrode suppressed with interface-reaction and method for fabricating semiconductor device having the same
07/01/2004US20040124459 Prevent reduction in coupling ratio; floating barriers
07/01/2004US20040124457 Semiconductor device having a capacitor with increased capacitance
07/01/2004US20040124456 Method to isolate device layer edges through mechanical spacing
07/01/2004US20040124455 Ferroelectric memory devices with expanded plate line and methods of fabricating the same
07/01/2004US20040124451 Thin film transistor array substrate and method for manufacturing the same
07/01/2004US20040124450 Integrated circuit device and method therefor
07/01/2004US20040124449 Metal oxide semiconductor field effect transistors (MOSFETS) used in ink-jet head chips and method for making the same
07/01/2004US20040124448 Providing protection against transistor junction breakdowns from supply voltage
07/01/2004US20040124447 III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal
07/01/2004US20040124445 Semiconductor substrate and method of manufacture thereof
07/01/2004US20040124444 Self-aligned bipolar transistor having recessed spacers and method for fabricating same
07/01/2004US20040124443 Semiconductor device and manufacturing method thereof
07/01/2004US20040124442 Display device
07/01/2004US20040124439 Semiconductor device having a hollow region and method of manufacturing the same
07/01/2004US20040124436 Indium phosphide heterojunction bipolar transistor layer structure and method of making the same
07/01/2004US20040124435 Semiconductor on single crystal substrate; reducing dislociation density
07/01/2004US20040124427 Apparatus with improved layers of group III-nitride semiconductor
07/01/2004US20040124419 Semiconductor device and its manufacturing method
07/01/2004US20040124418 Semiconductor device and method of manufacturing the same
07/01/2004US20040124417 Active matrix display device and manufacturing method thereof
07/01/2004US20040124415 Formation of thin channels for TFT devices to ensure low variability of threshold voltages
07/01/2004US20040124410 Novel organic semiconductor polymer and organic thin film transistor using the same
07/01/2004US20040124409 Quantum optical semiconductor device
07/01/2004US20040124408 Alloy memory
07/01/2004US20040123664 Acceleration sensor
07/01/2004US20040123663 Acceleration sensor
07/01/2004DE4142469B4 Verfahren zur Erzeugung und zur Entfernung von temporären Siliziumdioxid-Strukturen A process for the production and for the removal of the temporary silicon dioxide structures
07/01/2004DE19854269B4 Dünnschichtsolarzellenanordnung sowie Verfahren zur Herstellung derselben Thin film solar cell arrangement and method of manufacturing the same
07/01/2004DE19808989B4 Dünnschichttransistor und Herstellungsverfahren dafür Thin film transistor and manufacturing method thereof
07/01/2004DE10356654A1 Removal of metal layers used in fabricating semiconductor device comprises removing metal layers with cleaning solution comprising acid solution and oxidation agent containing iodine
07/01/2004DE10346609A1 Oxidation process for a flash memory cell comprises preparing a semiconductor substrate on which is formed a gate electrode with a tunnel oxide film, a potential-free gate, a dielectric film and control gate, and carrying out dry oxidation
07/01/2004DE10338666A1 Oxidhalbleiterelektrode und Verfahren zu ihrer Herstellung Oxidhalbleiterelektrode and processes for their preparation
07/01/2004DE10261424B3 Production of an emitter with a good ohmic contact used in the production of e.g. a diode comprises introducing an emitter into a surface region of a semiconductor body by doping in three steps
07/01/2004DE10257665B3 Halbleiterspeicher mit einer Anordnung von Speicherzellen A semiconductor memory comprising an array of memory cells
07/01/2004CA2510606A1 Semiconductor multi-layered structure with non-uniform quantum dots, and light-emitting diode, semiconductor laser diode and, semiconductor light amplifier using the same as well as method for making them
06/2004
06/30/2004EP1434285A2 Organic semiconductor polymer and organic thin film transistor
06/30/2004EP1434281A2 Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
06/30/2004EP1434275A1 Thin film semiconductor device and method for fabricating the same
06/30/2004EP1434274A2 Buried-gate-type semiconductor device
06/30/2004EP1434273A2 Power semiconductor device and method of manufacturing same
06/30/2004EP1434272A1 Production method for semiconductor device
06/30/2004EP1434263A2 Separating method for a layer that is to be transferred
06/30/2004EP1434262A2 Semiconductor device manufactured by the transfer technique
06/30/2004EP1434260A2 Method to manufacture LDMOS transistors
06/30/2004EP1434258A2 MOS device and a process for manufacturing MOS devices using a dual-polysilicon layer technology with side contact
06/30/2004EP1434257A2 MOS device and process for manufacturing MOS devices using dual-polysolicon layer technology
06/30/2004EP1434253A1 SEMICONDUCTOR DEVICE FABRICATED ON SURFACE OF SILICON HAVING <110> DIRECTION OF CRYSTAL PLANE AND ITS PRODUCTION METHOD
06/30/2004EP1433743A1 METHOD FOR PREPARING COBALT−PROTEIN COMPLEX
06/30/2004EP1433211A2 Substituted pentacene semiconductors
06/30/2004EP1433206A1 Transistor with an electron and a vertical channel and the production methods thereof
06/30/2004EP1433201A1 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
06/30/2004EP1433200A2 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
06/30/2004EP1433196A2 United method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
06/30/2004EP1433182A1 Selective operation of a multi-state non-volatile memory system in a binary mode
06/30/2004CN2622868Y Nano silicon superhigh speed additron
06/30/2004CN2622731Y Thin film transistor LCD
06/30/2004CN1509501A Integration of two memory types
06/30/2004CN1509497A Semiconductor integrated circuit device and producing method thereof
06/30/2004CN1509477A Flash memory device with increase of efficiency during APDE process
06/30/2004CN1509413A Semiconductor element comprising semimagnetic contact
06/30/2004CN1508966A Electric device and its manufacturing method
06/30/2004CN1508928A Semiconductor device fitted with impulse-voltage protection circuit
06/30/2004CN1508883A 半导体器件及保持电路 The semiconductor device and hold circuit
06/30/2004CN1508882A 半导体装置 Semiconductor device
06/30/2004CN1508881A Bidirectional light controlled thyristor chip, light-triggered coupler and solid relay
06/30/2004CN1508880A Bidirectional-light silicon controlled chip
06/30/2004CN1508874A Flash memory cells and fabrication process thereof
06/30/2004CN1508861A Method of manufacturing semiconductor integrated circuit device
06/30/2004CN1508854A Method for manufacturing semiconductor integrated circuit device
06/30/2004CN1508853A High-frequency schottky diode electrochemical preparation method
06/30/2004CN1508846A Semiconductor device and its manufacturing method
06/30/2004CN1508840A Medium separable semiconductor device and its manufactruing method
06/30/2004CN1508767A Photoelectric device and its manufacturing method and electronic apparatus
06/30/2004CN1508615A Electronic device and its making method, spattering target
06/30/2004CN1508614A Array baseboard of LCD and its producing method
06/30/2004CN1508612A Thin-film transistor array board and liquid crystal display comprising same
06/30/2004CN1508611A Method for inhibiting electricity-leakage in image-collection
06/30/2004CN1508547A 加速度传感器 Acceleration sensor
06/30/2004CN1156027C Method of producing semiconductor member and method of producing solar cell
06/30/2004CN1156019C Molecular tunnen diode and its manufacture
06/30/2004CN1156018C Semiconductor device and process for producing the same
06/30/2004CN1156017C Power smiconductor device in wide-band-gap semiconductor