Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/2004
06/17/2004WO2004051752A2 Boron phosphide-based compound semiconductor device, production method thereof and light-emitting diode
06/17/2004WO2004051751A1 Information storage element, manufacturing method thereof, and memory array
06/17/2004WO2004051749A1 Lateral lubistor structure and method
06/17/2004WO2004051743A2 Radiation protection in integrated circuits
06/17/2004WO2004051733A1 Thin gaas die with copper back-metal structure
06/17/2004WO2004051728A1 Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers
06/17/2004WO2004051727A1 Semiconductor device with parallel plate trench capacitor
06/17/2004WO2004051726A1 Semiconductor device and its manufacturing method
06/17/2004WO2004051712A2 Novel field effect transistor and method of fabrication
06/17/2004WO2004051707A2 Gallium nitride-based devices and manufacturing process
06/17/2004WO2004051703A2 Organic electroluminescence display panel and manufacturing method thereof
06/17/2004WO2004051550A1 Mosfet parametric amplifier
06/17/2004WO2004020689A3 Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
06/17/2004WO2004019382A3 Tft sensor having improved imaging surface
06/17/2004WO2004006633A3 Integrated circuit including field effect transistor and method of manufacture
06/17/2004WO2003061006A3 Stacked die in die bga package
06/17/2004US20040116034 Method of manufacturing an electronic device containing a carbon nanotube
06/17/2004US20040115952 Cleaning solution and method for selectively removing layer in a silicidation process
06/17/2004US20040115926 Method of wet etching an inorganic antireflection layer
06/17/2004US20040115916 Selective placement of dislocation arrays
06/17/2004US20040115906 Semiconductor film, method for manufacturing semiconductor film, semiconductor device, and method for manufacturing semiconductor device
06/17/2004US20040115900 Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
06/17/2004US20040115897 Manufacture of semiconductor device having STI and semiconductor device manufactured
06/17/2004US20040115896 MOS transistor having a T-shaped gate electrode and method for fabricating the same
06/17/2004US20040115895 Method of preparing buried LOCOS collar in trench DRAMS
06/17/2004US20040115894 Method of manufacturing a semiconductor device
06/17/2004US20040115890 Semiconductor device having low resistivity source and drain electrodes
06/17/2004US20040115888 [method for fabricating locally strained channel ]
06/17/2004US20040115886 Vertical flash memory cell with buried source rail
06/17/2004US20040115885 Method of forming a floating gate in a flash memory device
06/17/2004US20040115884 [dynamic random access memory cell and fabrication thereof]
06/17/2004US20040115883 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment
06/17/2004US20040115871 Method for fabricating semiconductor device
06/17/2004US20040115869 Manufacturing method of semiconductor device
06/17/2004US20040115848 Nanofabrication of InAs/A1Sb heterostructures
06/17/2004US20040115847 Method for fabricating semiconductor light emitting device
06/17/2004US20040115696 Utilizing programmable functionalized self-assembling nucleic acids as building blocks for molecular electronic and photonic mechanisms, organizing interconnected nanostructures and/or micronized components of micro or optoelectronic devices
06/17/2004US20040114433 Programmable fuse and antifuse and method therefor
06/17/2004US20040114302 Integrated, tunable capacitor
06/17/2004US20040114301 Structure of radio frequency variable capacitor and method of manufacturing the same
06/17/2004US20040114060 Array substrate for liquid crystal display device and method of fabricating the same
06/17/2004US20040114059 Thin film transistor array panel for liquid crystal display and method for manufacturing the same
06/17/2004US20040113737 Inductors and transformers in integrated circuits
06/17/2004US20040113283 Method for fabricating encapsulated semiconductor components by etching
06/17/2004US20040113238 Semiconductor device
06/17/2004US20040113231 High voltage semiconductor device
06/17/2004US20040113230 Self-aligned STI for narrow trenches
06/17/2004US20040113227 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method
06/17/2004US20040113226 Semiconductor integrated circuit device
06/17/2004US20040113223 Elongation shape; isolation zones; gettering impurities
06/17/2004US20040113217 Stress inducing spacers
06/17/2004US20040113214 Semiconductor device, electro-optical device, electronic apparatus, and method for manufacturing semiconductor device
06/17/2004US20040113213 Semiconductor device and method for manufacturing same
06/17/2004US20040113212 Multilayer; semiconductor substrate , barrier electrode, intake and drain zones on substrate
06/17/2004US20040113211 Gate electrode with depletion suppression and tunable workfunction
06/17/2004US20040113210 Novel field effect transistor and method of fabrication
06/17/2004US20040113209 MOSFET formed by using salicide process and method of manufacturing the same
06/17/2004US20040113208 Method of manufacturing insulated gate semiconductor device
06/17/2004US20040113206 Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer
06/17/2004US20040113205 Power metal oxide semiconductor field effect transistor layout
06/17/2004US20040113203 Trench MOSFET device with improved on-resistance
06/17/2004US20040113202 Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses
06/17/2004US20040113201 Structures of and methods of fabricating trench-gated MIS devices
06/17/2004US20040113200 Semiconductor device
06/17/2004US20040113199 Nonvolatile semiconductor memory device
06/17/2004US20040113198 Doped semiconductor substrate with wells; overcoated with dielectric; electrodes
06/17/2004US20040113197 Semiconductor device of non-volatile memory
06/17/2004US20040113195 Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor
06/17/2004US20040113188 Semiconductor element having a semi-magnetic contact
06/17/2004US20040113183 Isolating phase change memory devices
06/17/2004US20040113182 Nitrogen implementation to minimize device variation
06/17/2004US20040113179 Field-effect power transistor
06/17/2004US20040113174 Isolation structures for imposing stress patterns
06/17/2004US20040113173 Method of producing semiconductor device
06/17/2004US20040113172 Semiconductor device
06/17/2004US20040113171 Method of fabricating a mosfet device with metal containing gate structures
06/17/2004US20040113165 Nano optical sensors via molecular self-assembly
06/17/2004US20040113161 Thin-film transistor structure, method for manufacturing the thin-film transistor structure, and display device using the thin-film transistor structure
06/17/2004US20040113158 Semiconductor device
06/17/2004US20040113153 Integrated electronic microphone
06/17/2004US20040113152 Vertical structure thin film transistor
06/17/2004US20040113151 CMOS image sensor
06/17/2004US20040113150 Semiconductor device, display device, and method of manufacturing the same
06/17/2004US20040113149 Thin film transistor array panel and manufacturing method thereof
06/17/2004US20040113144 Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
06/17/2004US20040113143 Semiconductor device having a lattice-mismatched semiconductor layer on a substrate
06/17/2004US20040113142 Semiconductor device and method of manufacturing the same
06/17/2004US20040113139 Sublithographic nanoscale memory architecture
06/17/2004US20040113138 Stochastic assembly of sublithographic nanoscale interfaces
06/17/2004US20040112937 Microstructure component
06/17/2004US20040112860 Method for detecting the end point by using matrix
06/17/2004US20040112723 Electric switching device and electric circuit device having the same
06/17/2004DE10355299A1 Halbleiterdrucksensor Semiconductor pressure sensor
06/17/2004DE10338984A1 Betriebsverfahren für ein Flash-Speicherbauelement mit SONOS-Zellen A method of operating a flash memory device with SONOS cells
06/17/2004DE10335391A1 Herstellungsverfahren für ein Flash-Speicherbauteil Manufacturing method for a flash memory device
06/17/2004DE10335118A1 Halbleitervorrichtung Semiconductor device
06/17/2004DE10257873B3 Compact memory cell array, includes capacitors in trench with access transistors above them, interconnected by surface- and embedded semiconductor data lines
06/17/2004DE10256911A1 Group three nitride transistor component on a silicon substrate for high temperature and microwave uses is formed by gas phase epitaxy and has a buffer layer
06/17/2004DE10255936A1 Verbesserte Technik zur Herstellung eines Oxid/Nitrid-Schicht-Stapels durch Steuern der Stickstoffionenkonzentration in einem Nitrierungsplasma Improved technique for producing an oxide / nitride layer stack by controlling the nitrogen ions in a concentration Nitrierungsplasma
06/17/2004DE10255870A1 A process for preparation of layers from a layer material on organic semiconductor layers useful in the production of organic field effect transistors with top-contact architecture from conductive polymers