Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2004
07/08/2004US20040132272 Methods of fabricating a semiconductor device having a metal gate pattern
07/08/2004US20040132271 Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing
07/08/2004US20040132270 Method of forming a novel gate electrode structure comprised of a silicon-germanium layer located between random grained polysilicon layers
07/08/2004US20040132266 Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
07/08/2004US20040132265 Separating method
07/08/2004US20040132261 Method for forming gate oxide in semiconductor device
07/08/2004US20040132260 Process for fabricating a short-gate-length MOS transistor and integrated circuit comprising such a transistor
07/08/2004US20040132258 MOSFET and method of fabricating the same
07/08/2004US20040132257 Semiconductor device fabrication method
07/08/2004US20040132256 MOS transistor having a recessed gate electrode and fabrication method thereof
07/08/2004US20040132255 Semiconductor device and producing method of the same
07/08/2004US20040132254 Deterministically doped field-effect devices and methods of making same
07/08/2004US20040132252 Method of forming a field effect transistor having a lateral depletion structure
07/08/2004US20040132251 Non-volatile memory and method for manufacturing non-volatile memory
07/08/2004US20040132250 Preventing dielectric thickening over a gate area of a transistor
07/08/2004US20040132249 Semiconductor device and a method of manufacturing the same
07/08/2004US20040132248 Flash memory cell and method for fabricating the same
07/08/2004US20040132247 Semiconductor device and method of manufacturing the same
07/08/2004US20040132244 Method of manufacturing a semiconductor device
07/08/2004US20040132241 Insulated gate field effect transistor and method of fabricating the same
07/08/2004US20040132240 Method of manufacturing CMOS semiconductor device
07/08/2004US20040132238 Semiconductor device and manufacturing method thereof
07/08/2004US20040132237 Method of manufacturing a semiconductor device
07/08/2004US20040132236 Mos transistor
07/08/2004US20040132235 Silicon thin film transistor, a method of manufacture, and a display screen
07/08/2004US20040132233 Semiconductor device
07/08/2004US20040131888 Magnetic sensor
07/08/2004US20040131782 Preventing disconnections and short circuits; surface pretreating to set contact angle for ink jet droplet
07/08/2004US20040131097 Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor
07/08/2004US20040130951 Write once read only memory employing charge trapping in insulators
07/08/2004US20040130950 Electrically erasable programmable logic device
07/08/2004US20040130947 Flash memory with trench select gate and fabrication process
07/08/2004US20040130942 Data retention for a localized trapping non-volatile memory
07/08/2004US20040130934 NROM memory cell, memory array, related devices and methods
07/08/2004US20040130517 Pixel structure of active matrix display device
07/08/2004US20040130516 Organic light emitting diode display having shield electrodes
07/08/2004US20040130380 Switching circuit device
07/08/2004US20040130262 Electroluminescent display device
07/08/2004US20040130038 Electrode for electric double layer capacitor
07/08/2004US20040130037 Group III nitride based flip-chip intergrated circuit and method for fabricating
07/08/2004US20040130025 Electrode for p-type Group III nitride compound semiconductor and method for producing the same
07/08/2004US20040130004 Semiconductor device whose semiconductor chip has chamfered backside surface edges and method of manufacturing the same
07/08/2004US20040130002 Gallium nitride material devices and methods of forming the same
07/08/2004US20040130000 Process for manufacturing an array of cells including selection bipolar junction transistors
07/08/2004US20040129998 Semiconductor device with a cavity therein and a method of manufacturing the same
07/08/2004US20040129997 Semiconductor apparatus and method for manufacturing the same
07/08/2004US20040129993 components having a blocking p-n junction, the latter appears on the surface of the substrate, on which and in which the semiconductor component is realized, somewhere between the live contacts
07/08/2004US20040129989 Sensor with failure threshold
07/08/2004US20040129988 Use of indium to define work function of p-type doped polysilicon of polysilicon germanium
07/08/2004US20040129987 Ferroelectric composite material, method of making same and memory utilizing same
07/08/2004US20040129986 miniaturizing a virtual grounding type memory cell based on a three-layer polysilicon gate, enhancing the performance, and improving the yield
07/08/2004US20040129985 Method for operating n-channel electrically erasable programmable logic device
07/08/2004US20040129983 Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
07/08/2004US20040129982 Semiconductor device and manufacturing method
07/08/2004US20040129980 Semiconductor device with resistor element
07/08/2004US20040129979 CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture
07/08/2004US20040129978 Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
07/08/2004US20040129976 Bladed silicon-on-insulator semiconductor devices and method of making
07/08/2004US20040129975 Semiconductor device and method for manufacturing the same
07/08/2004US20040129973 Power semiconductor device
07/08/2004US20040129972 having memory region in which memory cell array is formed of non-volatile memory devices arranged in matrix of rows and columns, each.device has word gate formed above semiconductor layer with insulating layer interposed, impurity layer, controller
07/08/2004US20040129971 Method and apparatus for dual conduction analog programming
07/08/2004US20040129970 Semiconductor device and method for fabricating the same
07/08/2004US20040129969 Control of high -k gate dielectric film composition profile for property optimization
07/08/2004US20040129962 Method for manufacturing non-volatile memory device and non-volatile memory device and semiconductor device
07/08/2004US20040129960 Semiconductor device and manufacturing method thereof, delamination method, and transferring method
07/08/2004US20040129959 electrode comprising a first portion on the gate insulator in the recess and a second reduced-width portion extending from the first portion; and source/drain region in substrate adjacent recess; T-shaped gate electrode
07/08/2004US20040129942 Inverted buried strap structure and method for vertical transistor DRAM
07/08/2004US20040129941 Amorphous and polycrystalline silicon nanolaminate
07/08/2004US20040129940 Semiconductor wafer and a methd for manufacturing a semiconductor wafer
07/08/2004US20040129933 Pixel current driver for organic light emitting diode displays
07/08/2004US20040129932 Light receiving element using interconnected nanoparticles
07/08/2004US20040129931 Semiconductor laser with reduced temperature sensitivity
07/08/2004US20040129672 Electronic and photonic devices having ultra-micro structures fabricated with a focused ion beam
07/08/2004US20040129451 Method of separating semiconductor dies from a wafer
07/08/2004US20040129077 Sensor
07/08/2004DE19741970B4 Randstruktur für Halbleiterbauelement mit hoher Durchbruchsspannung An edge structure for semiconductor device with high breakdown voltage
07/08/2004DE10361256A1 Silicon carbide semiconductor structure for e.g. metal oxide semiconductor field effect transistor, includes side surface intersecting main surface at specified acute angle
07/08/2004DE10358697A1 Halbleiteranordnung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
07/08/2004DE10355273A1 Magnetic random access memory device for storing data, has elongated reference magnetic resistors extending along face nonparallel to main magnetic resistors and including resistance between maximum and minimum resistance
07/08/2004DE10316531A1 Self-adjusted dual polysilicon bipolar transistor has collector region, sub-collector region, base region, emitter region and carbon doped region on first side next to collector region
07/08/2004DE10296911T5 Leistungs-MOSFET mit verbesserter Durchbruchspannung Power MOSFET with improved breakdown voltage
07/08/2004DE10257682A1 Halbleiterschaltungsanordnung Semiconductor circuitry
07/07/2004EP1435664A1 Semiconductor device
07/07/2004EP1435663A2 PMOS transistor and method for forming the same
07/07/2004EP1435661A2 Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof
07/07/2004EP1435660A2 Memory device utilizing vertical nanotubes
07/07/2004EP1435653A2 Semiconductor device manufactured by a transferring method
07/07/2004EP1435650A2 Method of forming a transistor
07/07/2004EP1435649A2 Methods of forming a transistor gate
07/07/2004EP1435648A1 Process of making CMOS and drain extension MOS transistors with silicided gate
07/07/2004EP1435115A2 Mis device having a trench gate electrode and method of making the same
07/07/2004EP1435114A2 Salicided gate for virtual ground arrays
07/07/2004EP1435110A2 A method for forming a layered semiconductor structure and corresponding structure
07/07/2004EP1435107A1 Method for production of a gate structure for a mos transistor
07/07/2004EP1434978A1 Micromechanical component (on pressure sensor membrane) comprising a bellows-type structure for temperature shifts
07/07/2004EP1434681A1 Fabrication method at micrometer- and nanometer- scales for generation and control of anisotropy of structural, electrical, optical and optoelectronic properties of thin films of conjugated materials
07/07/2004CN1511349A Semiconductor device and its manufacturing method
07/07/2004CN1511346A Semiconductor device and method of manufacturing same
07/07/2004CN1511337A Method and device for processing substrate, and appartus manufacturing semiconductor device