| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/27/2004 | US6768139 Insulated p-type well surrounded by a buried n-type emitter well is used as base terminal; random access memory computers; n-p-n junction transistors as footprint diodes |
| 07/27/2004 | US6768138 Diode element |
| 07/27/2004 | US6768134 Semiconductor device and a method for forming patterns |
| 07/27/2004 | US6768132 Surface modified organic thin film transistors |
| 07/27/2004 | US6767847 Method of forming a silicon nitride-silicon dioxide gate stack |
| 07/27/2004 | US6767845 Method of manufacturing semiconductor device |
| 07/27/2004 | US6767843 Oxidizing silicon carbide in nitrous oxide using a temperature profile of about 1200 degrees c |
| 07/27/2004 | US6767814 Semiconductor device having silicide thin film and method of forming the same |
| 07/27/2004 | US6767813 Integrated circuit devices having active regions with expanded effective widths and methods of manufacturing same |
| 07/27/2004 | US6767810 Method to increase substrate potential in MOS transistors used in ESD protection circuits |
| 07/27/2004 | US6767808 Method for fabricating semiconductor device |
| 07/27/2004 | US6767799 Laser beam irradiation method |
| 07/27/2004 | US6767798 Comprises silicon nitride/dioxide layers; high speed, bipolar transistors |
| 07/27/2004 | US6767796 Method of manufacturing semiconductor device and the semiconductor device |
| 07/27/2004 | US6767795 Highly reliable amorphous high-k gate dielectric ZrOXNY |
| 07/27/2004 | US6767794 Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance MOSFET |
| 07/27/2004 | US6767793 Strained fin FETs structure and method |
| 07/27/2004 | US6767791 Structure and method for suppressing oxide encroachment in a floating gate memory cell |
| 07/27/2004 | US6767790 Methods of writing/erasing of nonvolatile semiconductor storage device |
| 07/27/2004 | US6767783 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation |
| 07/27/2004 | US6767780 Method for fabricating CMOS transistor |
| 07/27/2004 | US6767779 Asymmetrical MOSFET layout for high currents and high speed operation |
| 07/27/2004 | US6767777 Method for manufacturing and structure for transistors with reduced gate to contact spacing including etching to thin the spacers |
| 07/27/2004 | US6767776 Semiconductor device, and method for manufacturing the same |
| 07/27/2004 | US6767773 Method of Production of a thin film type semiconductor device having a heat-retaining layer |
| 07/27/2004 | US6767772 Active matrix substrate, electrooptical device, and method of producing active matrix substrate |
| 07/27/2004 | US6767771 Formation process of quantum dots or wires |
| 07/27/2004 | US6767770 Method of forming self-aligned thin capacitively-coupled thyristor structure |
| 07/27/2004 | US6767760 Process of manufacturing a thin-film transistor |
| 07/27/2004 | US6767757 High-vacuum packaged microgyroscope and method for manufacturing the same |
| 07/27/2004 | US6767755 Method of producing electrooptical device and method of producing driving substrate for driving electrooptical device |
| 07/27/2004 | US6767751 Integrated driver process flow |
| 07/27/2004 | US6767694 Process for forming pattern and method for producing liquid crystal apparatus employing process for forming pattern |
| 07/22/2004 | WO2004061991A1 Thin film transistor substrate and method for forming metal wire thereof |
| 07/22/2004 | WO2004061978A1 Field-effect transistor |
| 07/22/2004 | WO2004061977A1 Semiconductor storage and mobile electronic device |
| 07/22/2004 | WO2004061975A1 Trench mis device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
| 07/22/2004 | WO2004061974A2 Silicon carbide power mos field effect transistors and manufacturing methods |
| 07/22/2004 | WO2004061973A1 Group iii nitride based flip-chip integrated circuit and method for fabricating |
| 07/22/2004 | WO2004061972A1 Dense dual-plane devices |
| 07/22/2004 | WO2004061971A1 P-type nitride semiconductor structure and bipolar transistor |
| 07/22/2004 | WO2004061970A1 Indium phosphide heterojunction bipolar transistor layer structure and method of making the same |
| 07/22/2004 | WO2004061923A1 Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| 07/22/2004 | WO2004061920A2 Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer |
| 07/22/2004 | WO2004061915A2 Integrating n-type and p-type metal gate transistors |
| 07/22/2004 | WO2004061881A1 Thin film capacitor and method for manufacturing same |
| 07/22/2004 | WO2004061863A2 Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
| 07/22/2004 | WO2004061859A2 Stochastic assembly of sublithographic nanoscale interfaces |
| 07/22/2004 | WO2004061851A2 An improved method for making high-density nonvolatile memory |
| 07/22/2004 | WO2004040622A3 Nickel silicide with reduced interface roughness |
| 07/22/2004 | WO2004040616A3 Field effect transistor and method for production thereof |
| 07/22/2004 | WO2003100835A3 Gate oxide process methods for high performance mos transistors by reducing remote scattering |
| 07/22/2004 | WO2002082510A9 Single transistor rare earth manganite ferroelectric nonvolatile memory cell |
| 07/22/2004 | US20040143805 Device for determining the mask version utilized for each metal layer of an integrated circuit |
| 07/22/2004 | US20040142582 Thin film structure from LILAC annealing |
| 07/22/2004 | US20040142581 Method for manufacturing a semiconductor device |
| 07/22/2004 | US20040142579 Semiconductor device and method for fabricating the same |
| 07/22/2004 | US20040142573 Method for manufacturing MOSFET semiconductor device |
| 07/22/2004 | US20040142570 Post high voltage gate dielectric pattern plasma surface treatment |
| 07/22/2004 | US20040142569 Methods for fabricating semiconductor devices |
| 07/22/2004 | US20040142547 Method of fabricating non-volatile memory |
| 07/22/2004 | US20040142546 Semiconductor device and method for fabricating the same |
| 07/22/2004 | US20040142545 Semiconductor with tensile strained substrate and method of making the same |
| 07/22/2004 | US20040142544 Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display amd manufacturing method of the same |
| 07/22/2004 | US20040142543 Method of fabricating a semiconductor device utilizing a catalyst material solution |
| 07/22/2004 | US20040142538 Method of manufacturing semiconductor device |
| 07/22/2004 | US20040142537 Strained-silicon channel CMOS with sacrificial shallow trench isolation oxide liner |
| 07/22/2004 | US20040142533 CMOS compatible process for making a charge trapping device |
| 07/22/2004 | US20040142528 Decoupling capacitor for high frequency noise immunity |
| 07/22/2004 | US20040142525 Method of manufacturing a semiconductor device |
| 07/22/2004 | US20040142524 Insulated gate field effect transistor having passivated Schottky barriers to the channel |
| 07/22/2004 | US20040142523 Method of forming vertical mosfet with ultra-low on-resistance and low gate charge |
| 07/22/2004 | US20040142522 Semiconductor device |
| 07/22/2004 | US20040142521 Methods for manufacturing a semiconductor device |
| 07/22/2004 | US20040142518 Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer |
| 07/22/2004 | US20040142516 Thin film transistor having copper alloy wire and method of manufacturing the same |
| 07/22/2004 | US20040142515 SOI MOSFETS exhibiting reduced floating-body effects |
| 07/22/2004 | US20040142508 Non-planar surface for semiconductor chips |
| 07/22/2004 | US20040142504 Focal plane arrays in type II-superlattices |
| 07/22/2004 | US20040142502 Active matrix type organic light emitting diode device and thin film transistor thereof |
| 07/22/2004 | US20040142500 Reduced hot carrier induced parasitic sidewall device activation in isolated buried channel devices by conductive buried channel depth optimization |
| 07/22/2004 | US20040142497 Electrostatic discharge protection of thin-film resonators |
| 07/22/2004 | US20040142211 Chemical monolayer memory device |
| 07/22/2004 | US20040142118 Flexible electronic device and production method of the same |
| 07/22/2004 | US20040141453 Micro-electronic junctions devices containing same |
| 07/22/2004 | US20040141359 2F2 memory device |
| 07/22/2004 | US20040141357 Ferroelectric transistor for storing two data bits |
| 07/22/2004 | US20040141352 Memory on a SOI substrate |
| 07/22/2004 | US20040141326 Light emitting diode light source |
| 07/22/2004 | US20040141130 Electro-optical device and electronic apparatus |
| 07/22/2004 | US20040141116 Reflection-transmission type liquid crystal display device and method for manufacturing the same |
| 07/22/2004 | US20040141097 Electro-optical device and electronic apparatus |
| 07/22/2004 | US20040140849 Negative feedback amplifier with electrostatic discharge protection circuit |
| 07/22/2004 | US20040140575 Contact structure of a wiring and a thin film transistor array panel including the same |
| 07/22/2004 | US20040140566 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
| 07/22/2004 | US20040140550 High-frequency package |
| 07/22/2004 | US20040140547 Semiconductor chip and method for manufacturing the same |
| 07/22/2004 | US20040140546 [stack chip package structure] |
| 07/22/2004 | US20040140544 Semiconductor device |
| 07/22/2004 | US20040140535 Semiconductor device, method of forming epitaxial film, and laser ablation device |