Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2004
07/14/2004CN1512227A Liquid crystal display device and its producing method
07/14/2004CN1512224A 显示设备 Display device
07/14/2004CN1511863A Novel organic semiconductor polymer and organic thin film transistor using said polymer
07/14/2004CN1157799C 半导体和钛酸钡pn结 Pn junction semiconductor and barium titanate
07/14/2004CN1157798C Semiconductor device and productive method thereof
07/14/2004CN1157794C Semiconductor device and manufacturing method thereof
07/14/2004CN1157792C Once programmable semiconductor nonvolatile memory device and making method thereof
07/14/2004CN1157787C 半导体器件 Semiconductor devices
07/14/2004CN1157785C Moldless semiconductor device and photovoltaic device module making use of same
07/14/2004CN1157772C Manufacturing method of thin film transistor in liquid crystal display
07/14/2004CN1157765C Method for manufacturing crystal semiconductor material and method for making semiconductor device
07/14/2004CN1157764C Functional device and method of mfg. the same
07/14/2004CN1157758C Plasma elched eqipment
07/14/2004CN1157737C Non volatile storage deivce
07/14/2004CN1157633C Liquid crystal display device and its fault correcting method
07/13/2004US6763480 Flash EEprom system
07/13/2004US6762969 Semiconductor integrated circuit and method of manufacturing of semiconductor integrated circuit
07/13/2004US6762956 High-speed data programmable nonvolatile semiconductor memory device
07/13/2004US6762955 Nonvolatile semiconductor memory having control gate with top flat surface covering storage layers of two adjacent transistors
07/13/2004US6762805 Active matrix type liquid crystal display device and method of fabricating the same
07/13/2004US6762802 Liquid crystal display device and fabrication method thereof
07/13/2004US6762754 Driving circuit for electro-optical device, electro-optical device, and electronic apparatus
07/13/2004US6762510 Flexible integrated monolithic circuit
07/13/2004US6762483 Narrow fin FinFET
07/13/2004US6762480 Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain
07/13/2004US6762479 Microwave array transistor for low-noise and high-power applications
07/13/2004US6762477 Semiconductor device
07/13/2004US6762469 High performance CMOS device structure with mid-gap metal gate
07/13/2004US6762468 Semiconductor device and method of manufacturing the same
07/13/2004US6762467 Nonvolatile memory cell for prevention of second bit effect
07/13/2004US6762465 BiCMOS inverter
07/13/2004US6762463 MOSFET with SiGe source/drain regions and epitaxial gate dielectric
07/13/2004US6762462 Structure of protection against noise
07/13/2004US6762461 Semiconductor element protected with a plurality of zener diodes
07/13/2004US6762459 Method for fabricating MOS device with halo implanted region
07/13/2004US6762458 High voltage transistor and method for fabricating the same
07/13/2004US6762457 LDMOS device having a tapered oxide
07/13/2004US6762456 Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral RF MOS devices
07/13/2004US6762455 Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component
07/13/2004US6762454 Stacked polysilicon layer for boron penetration inhibition
07/13/2004US6762453 Programmable memory transistor
07/13/2004US6762451 Nucleation for improved flash erase characteristics
07/13/2004US6762449 Semiconductor integrated circuit device and the process of manufacturing the same having poly-silicon plug, wiring trenches and bit lines formed in the wiring trenches having a width finer than a predetermined size
07/13/2004US6762448 Dielectric fin structure is chosen such that a significant stress is induced in the single-crystal silicon material, enhanced mobility can be achieved
07/13/2004US6762443 Vertical transistor and transistor fabrication method
07/13/2004US6762441 Imager cell with pinned transfer gate
07/13/2004US6762440 Semiconductor component and corresponding test method
07/13/2004US6762439 Diode for power protection
07/13/2004US6762130 Method of photolithographically forming extremely narrow transistor gate elements
07/13/2004US6762124 Method for patterning a multilayered conductor/substrate structure
07/13/2004US6762114 Methods for transistor gate fabrication and for reducing high-k gate dielectric roughness
07/13/2004US6762106 Semiconductor device and method for fabricating the same
07/13/2004US6762105 Short channel transistor fabrication method for semiconductor device
07/13/2004US6762103 Method of forming an isolation film in a semiconductor device
07/13/2004US6762102 Methods for manufacturing semiconductor devices and semiconductor devices
07/13/2004US6762101 Damascene double-gate FET
07/13/2004US6762098 Trench DMOS transistor with embedded trench schottky rectifier
07/13/2004US6762097 Semiconductor device and method for manufacturing the same
07/13/2004US6762094 Nanometer-scale semiconductor devices and method of making
07/13/2004US6762093 High coupling floating gate transistor
07/13/2004US6762092 Scalable self-aligned dual floating gate memory cell array and methods of forming the array
07/13/2004US6762089 Method for manufacturing a memory device
07/13/2004US6762086 Method for fabricating semiconductor device with triple well structure
07/13/2004US6762085 Method of forming a high performance and low cost CMOS device
07/13/2004US6762083 Method for manufacturing heterojunction field effect transistor device
07/13/2004US6762082 Semiconductor device and method of fabricating the same
07/13/2004US6762081 Method for fabricating a semiconductor device
07/13/2004US6762080 Method of manufacturing a semiconductor device having a cathode and an anode from a wafer
07/13/2004US6762077 Integrated sensor packages and methods of making the same
07/13/2004US6762071 Method for fabricating a metal-oxide electron tunneling device for solar energy conversion
07/13/2004US6762068 Transistor with variable electron affinity gate and methods of fabrication and use
07/13/2004US6762063 Method of fabricating non-volatile ferroelectric transistors
07/08/2004WO2004057671A2 Method for forming patterns aligned on either side of a thin film
07/08/2004WO2004057661A2 Non-volatile memory cell and method of fabrication
07/08/2004WO2004057659A1 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
07/08/2004WO2004057658A2 Mis transistor with self-aligned gate and method for making same
07/08/2004WO2004057657A1 Method to produce low leakage high k materials in thin film form
07/08/2004WO2004057652A1 Semiconductor circuit device simulation method and semiconductor circuit device simulator
07/08/2004WO2004057623A1 Non-volatile memory and write method thereof
07/08/2004WO2004057523A1 Pressure activated fingerprint input apparatus
07/08/2004WO2004040668A3 Field effect transistor assembly and an integrated circuit array
07/08/2004WO2004021429B1 Transistor structure including a metal silicide gate and channel implants and method of manufacturing the same
07/08/2004WO2004012243A9 Selective placement of dislocation arrays
07/08/2004WO2004010469A3 Atomic layer deposition of multi-metallic precursors
07/08/2004WO2004003972A3 Transistor and sensors made from molecular materials with electric dipoles
07/08/2004WO2003106326B1 Micro-electro-mechanical system (mems) variable capacitor apparatuses and related methods
07/08/2004WO2003060917A3 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric
07/08/2004WO2002065516A8 Improved process for deposition of semiconductor films
07/08/2004WO2001084600A8 Process perturbation to measured-modeled method for semiconductor device technology modeling
07/08/2004US20040133862 Capacitance parameters calculation method for MOSFET and program therefor
07/08/2004US20040132959 Organic compounds having a core-shell structure
07/08/2004US20040132473 Avoiding PPP time-outs during IPCP negotiations
07/08/2004US20040132316 Ultra-thin gate dielectrics
07/08/2004US20040132315 Multistage deposition that incorporates nitrogen via an intermediate step
07/08/2004US20040132313 Method for production of a metallic or metal-containing layer
07/08/2004US20040132311 Method of etching high-K dielectric materials
07/08/2004US20040132303 Membrane 3D IC fabrication
07/08/2004US20040132293 Method for manufacturing semiconductor device and heat treatment method
07/08/2004US20040132288 Fabrication of semiconductor devices
07/08/2004US20040132281 Treatment of low-k dielectric materials for CMP