Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2004
07/22/2004US20040140534 Semiconductor device having passivation cap and method for manufacturing the same
07/22/2004US20040140529 Increasing an electrical resistance of a resistor by oxidation or nitridization
07/22/2004US20040140522 Magnetic storage apparatus and manufacturing method thereof
07/22/2004US20040140521 Semiconductor device
07/22/2004US20040140520 Provide a higher operating speed
07/22/2004US20040140517 LDMOS transistor with high voltage source and drain terminals hideaki tsuchiko
07/22/2004US20040140514 Semiconductor devices containing on-chip current sensor and methods for making such devices
07/22/2004US20040140513 Atomic layer deposition of CMOS gates with variable work functions
07/22/2004US20040140512 Integrated device with Schottky diode and MOS transistor and related manufacturing process
07/22/2004US20040140510 Electrically erasable read only memory; efficiency
07/22/2004US20040140509 Non-volatile memory and fabricating method thereof
07/22/2004US20040140507 Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon
07/22/2004US20040140506 Enhanced T-gate structure for modulation doped field effect transistors
07/22/2004US20040140505 Electrostatic discharge device protection structure
07/22/2004US20040140504 Low power flash memory cell and method
07/22/2004US20040140503 Semiconductor device and method for fabricating the same
07/22/2004US20040140502 Semiconductor integrated circuit device and a method of manufacturing the same
07/22/2004US20040140500 Stack gate with tip vertical memory and method for fabricating the same
07/22/2004US20040140498 Dual-bit nitride read only memory cell
07/22/2004US20040140497 Forming deep N well on a P-type substrate; forming single polysilicon EEPROM (Electrically Erasable Programmable Read Only Memory), cell, wherein the EEPROM cell is isolated from the P-type substrate by the N well
07/22/2004US20040140495 Semiconductor integrated circuit device and the process of manufacturing the same having poly-silicon plug, wiring trenches and bit lines formed in the wiring trenches having a width finer than a predetermined size
07/22/2004US20040140494 Contact structure
07/22/2004US20040140493 Ferroelectric memory and method for fabricating the same
07/22/2004US20040140490 Sputtering aluminum under high pressure; reduced power source
07/22/2004US20040140481 Optimized blocking impurity placement for SiGe HBTs
07/22/2004US20040140480 Semiconductor device and power amplifier using the same
07/22/2004US20040140472 Light emitting device
07/22/2004US20040140470 Semiconductor device and method of fabricating the same
07/22/2004US20040140469 Panel of a flat display and method of fabricating the panel
07/22/2004US20040140468 Buffer layer for promoting electron mobility and thin film transistor having the same
07/22/2004US20040140206 Method for fabricating silicon targets
07/22/2004DE19727396B4 Polysilizium-Dünnschichttransistor mit Silizid und Herstellungsverfahren dafür Polysilicon thin film transistor with silicide and production method thereof
07/22/2004DE10361649A1 Verfahren zum Herstellen einer Flüssigkristallanzeigevorrichtung A method of manufacturing a liquid crystal display device
07/22/2004DE10354866A1 Fabrication of liquid crystal display device used to display picture, comprises forming passivation layer on substrate including pixel electrode, forming common electrode, and injecting liquid crystal material between substrates
07/22/2004DE10329088A1 Flachdisplay zur Anwendung bei einem kleinen Modul Flat-panel display for use in a small module
07/22/2004DE10317098A1 Bipolar transistor production comprises formation of semiconductor substrate with n type collector region
07/22/2004DE10300594A1 Electronic and/or micromechanical structural element with chips, a packaging, a gel, and a gel packing agent useful in stress determination
07/22/2004DE10296970T5 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
07/22/2004DE10295878T5 Gegen Reverse Engineering geschützte integrierte Schaltungen und Verfahren zur Herstellung derselben unter Verwendung einer auf Feldoxid endenden sichtbaren Metallkontaktleitung Protected against reverse engineering integrated circuits and methods of manufacturing the same using an ending on the visible field oxide metal contact line
07/22/2004DE10261307A1 Halbleiterelement mit einer verbesserten Spannungsoberflächenschicht und Verfahren zur Herstellung einer Spannungsoberflächenschicht in einem Halbleiterelement Semiconductor element having an improved surface tension layer and method for preparing a voltage surface layer in a semiconductor element
07/22/2004DE10261145A1 Verbesserter Transistor mit abgesenktem Gate und ein Verfahren zur Herstellung desselben Improved transistor with reduced gate and a method for manufacturing the same
07/22/2004CA2511005A1 Group iii nitride based flip-chip integrated circuit and method for fabricating
07/22/2004CA2502850A1 Silicon carbide power mos field effect transistors and manufacturing methods
07/21/2004EP1439590A2 Mono-, oligo- and poly-bis(thienyl) arylenes and their use as charge transport materials
07/21/2004EP1439577A2 Semiconductor device and manufacturing method for the same
07/21/2004EP1439574A1 Process of forming a localised region of a material which is difficult to etch
07/21/2004EP1439570A1 SiGe strain relaxed buffer for high mobility devices and a method of fabricating it
07/21/2004EP1438757A2 Composition, method and electronic device
07/21/2004EP1438753A1 Thin film transistor device and method of manufacturing same
07/21/2004EP1438752A2 Silicon-on-insulator high-voltage device structure
07/21/2004EP1438751A2 Umosfet device and method of making the same
07/21/2004EP1438739A1 Sic bipolar semiconductor devices with few crystal defects
07/21/2004EP1438255A2 Micromechanical sensor having a self-test function and optimization method
07/21/2004EP1169896A4 Low stress die attachment
07/21/2004EP1009035B1 Insulated gate semiconductor device and method for manufacturing the same
07/21/2004EP0864180B1 Low resistance contact semiconductor diode
07/21/2004CN2627653Y Protected type triode
07/21/2004CN2627537Y Thin film semiconductor device, electrolight device and intermediate mask
07/21/2004CN1515039A Switch element having memory effect
07/21/2004CN1515035A Nitride semiconductor device
07/21/2004CN1515033A Lateral PIN diode and method for producing the same
07/21/2004CN1515029A Hafnium silicide target for forming gate oxide film and method for preparation thereof
07/21/2004CN1514495A Manufacturing method of scholttky barrier diode
07/21/2004CN1514494A High performance vertical PNP transistor and its manufacturing method
07/21/2004CN1514485A Non Volatile internal storage and its manufacturing method
07/21/2004CN1514470A Crystallization method of amorphous silicon for thin film transistor
07/21/2004CN1514469A Crystal mask, amorphous silicon crystallization method and method of manufacturing array base plate using same
07/21/2004CN1514424A Panel display for small scale mode application
07/21/2004CN1514303A Graph of liquid crystal display device and its forming method
07/21/2004CN1514295A Manufacturing method of liquid crystal display device and manufacturing method of its array baseplate
07/21/2004CN1514251A Acceleration transducer
07/21/2004CN1158709C Semiconductor device and its producing method
07/21/2004CN1158708C Semiconductor integrated circuit and its manufacturing method
07/21/2004CN1158707C Ferroelectric integrated circuit with oxygen doped protective layer and its preparing method
07/21/2004CN1158706C Semiconductor chip with surface coating
07/21/2004CN1158704C Integrated circuit and making method thereof
07/20/2004US6765773 ESD protection for a CMOS output stage
07/20/2004US6765771 SCR devices with deep-N-well structure for on-chip ESD protection circuits
07/20/2004US6765641 Display device
07/20/2004US6765630 Display panel
07/20/2004US6765562 Electrooptical device and method of fabricating the same
07/20/2004US6765454 Semiconductor device
07/20/2004US6765391 Low cost asic architecture for safety critical applications monitoring an applied stimulus
07/20/2004US6765279 Membrane 3D IC fabrication
07/20/2004US6765276 Bottom antireflection coating color filter process for fabricating solid state image sensors
07/20/2004US6765273 Device structure and method for reducing silicide encroachment
07/20/2004US6765271 Method for manufacturing non-volatile semiconductor memory and non-volatile semiconductor memory manufactured thereby
07/20/2004US6765270 Thin film transistor array gate electrode for liquid crystal display device
07/20/2004US6765268 Multiple transistors having a common gate pad between first group of drains and second group of drains
07/20/2004US6765266 Semiconductor device with peripheral portion for withstanding surge voltage
07/20/2004US6765265 System and method for manufacturing a thin film transistor
07/20/2004US6765264 Method of fabricating power rectifier device to vary operating parameters and resulting device
07/20/2004US6765263 Semiconductor device and method for fabricating the same
07/20/2004US6765262 Vertical high-voltage semiconductor component
07/20/2004US6765261 Semiconductor device comprising a non-volatile memory
07/20/2004US6765260 Flash memory with self-aligned split gate and methods for fabricating and for operating the same
07/20/2004US6765259 Non-volatile memory transistor array implementing “H” shaped source/drain regions and method for fabricating same
07/20/2004US6765258 Stack-gate flash memory cell structure and its contactless flash memory arrays
07/20/2004US6765256 Semiconductor device
07/20/2004US6765253 Semiconductor memory device