| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/17/2004 | DE10255866A1 An etching process for increasing the structural size of main structures in a semiconductor substrate useful in semiconductor wafer production for increasing their structural density (thickness, sic) and storage capacity |
| 06/17/2004 | DE10255849A1 Verbesserte Drain/Source-Erweiterungsstruktur eines Feldeffekttransistors mit dotierten Seitenwandabstandselementen mit großem ε Improved drain / source extension structure of a field-effect transistor with doped sidewall spacers with large ε |
| 06/17/2004 | DE10255841A1 Process for structuring ruthenium or ruthenium (IV) oxide layers used for a trench capacitor comprises depositing ruthenium or ruthenium (IV) oxide on sections of a substrate, depositing a covering layer, and further processing |
| 06/17/2004 | DE10255835A1 Microelectronic component e.g. FET for high density memory, has low ohmic tungsten nitride barrier layer |
| 06/17/2004 | DE10255830A1 Method for mfr of semiconductor component controllable by field effects, e.g. various types of field effect transistors, such as N-channel MOSFETs, double diffused MOSFETs (DMOSFETS) etc., contg. semiconductor body with channel zone |
| 06/17/2004 | DE10255116A1 LDMOS-Transistor LDMOS transistor |
| 06/16/2004 | EP1429392A2 SiC-misfet and method for fabricating the same |
| 06/16/2004 | EP1429391A1 Insulated gate semiconductor device and method of making the same |
| 06/16/2004 | EP1429390A2 Bipolar junction transistor |
| 06/16/2004 | EP1429130A1 Semiconductor sensor and transmitter for use in tire condition monitoring apparatus |
| 06/16/2004 | EP1428268A1 Large area silicon carbide devices and manufacturing methods therefor |
| 06/16/2004 | EP1428264A1 Low-capacity vertical diode |
| 06/16/2004 | EP1428263A2 Process for ultra-thin body soi devices that incorporate epi silicon tips and article made thereby |
| 06/16/2004 | EP1428262A2 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
| 06/16/2004 | EP1428252A2 A method for making a semiconductor device having a high-k gate dielectric |
| 06/16/2004 | EP1428248A2 Self-aligned transistor and diode toplogies in silicon carbide through the use of selective epitaxy or selective implantation |
| 06/16/2004 | EP1428247A1 Field-effect transistor with horizontal self-aligned gates and the production method therefor |
| 06/16/2004 | EP1428064A2 Electrostatic discharge protection for pixellated electronic device |
| 06/16/2004 | EP0946783B1 Semiconducting devices and method of making thereof |
| 06/16/2004 | EP0683921B1 Microstructures and single mask, single-crystal process for fabrication thereof |
| 06/16/2004 | CN1505841A EEPROM cell with asymmetric thin window |
| 06/16/2004 | CN1505840A Process for producing semiconductor integrated circuit device |
| 06/16/2004 | CN1505445A Matrix substrate, electronic apparatus, electro-optic apparatus, and electronic unit |
| 06/16/2004 | CN1505173A 半导体器件 Semiconductor devices |
| 06/16/2004 | CN1505172A Transistor, integrated circuit, photoelectric device, electronic device and manufacturing method thereof |
| 06/16/2004 | CN1505171A Semiconductor device and method for manufacturing semiconductor device |
| 06/16/2004 | CN1505170A SiC-MISFET and method for fabricating the same |
| 06/16/2004 | CN1505169A Semiconductor device with SOI region and bulk region and method of manufacture thereof |
| 06/16/2004 | CN1505168A Structure and method of making a high performance semiconductor device having a narrow doping profile |
| 06/16/2004 | CN1505161A Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same |
| 06/16/2004 | CN1505158A Integrated memory circuit and method of forming an integrated memory circuit |
| 06/16/2004 | CN1505156A 非易失性半导体存储器件及其制造方法 Non-volatile semiconductor memory device and manufacturing method thereof |
| 06/16/2004 | CN1505155A Semiconductor device and method of manufacturing the same |
| 06/16/2004 | CN1505154A 半导体存储器件 A semiconductor memory device |
| 06/16/2004 | CN1505145A 半导体装置 Semiconductor device |
| 06/16/2004 | CN1505134A Manufacturing method of flash memory device |
| 06/16/2004 | CN1505121A Semiconductor device and method for fabricating the same |
| 06/16/2004 | CN1505116A Dielectric film, its formation method, semiconductor device using the dielectric film and its production method |
| 06/16/2004 | CN1505114A Method for fabricating semiconductor device |
| 06/16/2004 | CN1505106A Cleaning solution and method for selectively removing layer in a silicidation process |
| 06/16/2004 | CN1504820A 有源矩阵显示装置 Active matrix display device |
| 06/16/2004 | CN1504816A Dot structure and manufacturing method thereof |
| 06/16/2004 | CN1504804A 背光模组及液晶显示装置 Backlight and liquid crystal display device |
| 06/16/2004 | CN1504408A Array structure of nm-class carbon tubes and its preparing process |
| 06/16/2004 | CN1154192C Transistor and making method thereof |
| 06/16/2004 | CN1154191C Insulator base semiconductor device and method for stabilizing same |
| 06/16/2004 | CN1154190C Non volatile semi conductor memory device and its manufacturing method |
| 06/16/2004 | CN1154188C Transistor, transistor array, method for manufacturing transistor array, and nonvolatile semiconductor memory |
| 06/16/2004 | CN1154165C Transistor and making method thereof |
| 06/15/2004 | US6751243 Semiconductor device with quantum dots having high carrier injection efficiency, its manufacture method, and semiconductor laser device |
| 06/15/2004 | US6751150 Circuits and method to protect a gate dielectric antifuse |
| 06/15/2004 | US6751138 Semiconductor integrated circuit device |
| 06/15/2004 | US6750999 Reconfigurable quasi-optical unit cells |
| 06/15/2004 | US6750925 Active matrix display device |
| 06/15/2004 | US6750924 Electro-optical device with conductive interlayer having a role of a capacitor electrode, method for making the same, and electronic apparatus |
| 06/15/2004 | US6750838 Active matrix type display device |
| 06/15/2004 | US6750742 Radio frequency device using micro-electronic-mechanical system technology |
| 06/15/2004 | US6750665 Semiconductor pressure detecting device |
| 06/15/2004 | US6750607 Display device |
| 06/15/2004 | US6750543 Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device |
| 06/15/2004 | US6750540 Magnetic random access memory using schottky diode |
| 06/15/2004 | US6750532 CMOS semiconductor device and method of manufacturing the same |
| 06/15/2004 | US6750526 Semiconductor device with trench isolation having reduced leak current |
| 06/15/2004 | US6750525 Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure |
| 06/15/2004 | US6750524 Trench MOS RESURF super-junction devices |
| 06/15/2004 | US6750520 Two-bit semiconductor memory with enhanced carrier trapping |
| 06/15/2004 | US6750518 Semiconductor device |
| 06/15/2004 | US6750517 Device layout to improve ESD robustness in deep submicron CMOS technology |
| 06/15/2004 | US6750514 Display having universal active matrix |
| 06/15/2004 | US6750513 Semiconductor device for driving plasma display panel |
| 06/15/2004 | US6750512 High efficiency mos semiconductor device that has lower gate-drain capacitance in inactive zones such as gate-pad or gate-bus |
| 06/15/2004 | US6750511 Trench-gate semiconductor device |
| 06/15/2004 | US6750510 Charge coupled device and production thereof |
| 06/15/2004 | US6750508 Power semiconductor switching element provided with buried electrode |
| 06/15/2004 | US6750507 Super-self-aligned trench-gated DMOS with reduced on-resistance |
| 06/15/2004 | US6750506 High-voltage semiconductor device |
| 06/15/2004 | US6750504 Low voltage single-poly flash memory cell and array |
| 06/15/2004 | US6750503 Stacked gate electrode for a MOS transistor of a semiconductor device |
| 06/15/2004 | US6750502 Technique to quench electrical defects in aluminum oxide film |
| 06/15/2004 | US6750501 Transistor type ferroelectric body nonvolatile storage element |
| 06/15/2004 | US6750499 Self-aligned trench-type dram structure and its contactless dram arrays |
| 06/15/2004 | US6750498 Semiconductor device including memory cells and manufacturing method thereof |
| 06/15/2004 | US6750489 Isolated high voltage PMOS transistor |
| 06/15/2004 | US6750487 Dual double gate transistor |
| 06/15/2004 | US6750486 Silicon substrate; n-channel region with silicon-germanium buffer layer, silicon-germanium compound relax layer, silicon epitaxial layer; p-channel region with silicon-germanium compound layer and silicon epitaxial cap layer |
| 06/15/2004 | US6750484 Silicon germanium hetero bipolar transistor |
| 06/15/2004 | US6750483 Silicon-germanium bipolar transistor with optimized germanium profile |
| 06/15/2004 | US6750482 Highly conductive semiconductor layer having two or more impurities |
| 06/15/2004 | US6750481 Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same |
| 06/15/2004 | US6750480 Bipolar transistor with lattice matched base layer |
| 06/15/2004 | US6750477 Static induction transistor |
| 06/15/2004 | US6750476 Substrate device manufacturing method and substrate device, electrooptical device manufacturing method and electrooptical device and electronic unit |
| 06/15/2004 | US6750475 Method for fabricating electric interconnections and interconnection substrate having electric interconnections fabricated by the same method |
| 06/15/2004 | US6750474 Semiconducting devices and method of making thereof |
| 06/15/2004 | US6750473 Transistor design for use in the construction of an electronically driven display |
| 06/15/2004 | US6750471 Microelectronic device including transistor with source and drain region separated by channel region comprising molecule having closed hollow cage structure which conducts electrons, exhibits coulomb blockage and receives and transmits electrons |
| 06/15/2004 | US6750159 Semiconductor apparatus, manufacturing method therefor, solid state image device and manufacturing method therefor |
| 06/15/2004 | US6750157 Nonvolatile memory cell with a nitridated oxide layer |
| 06/15/2004 | US6750126 Methods for sputter deposition of high-k dielectric films |
| 06/15/2004 | US6750123 Method of manufacturing CMOS device with implantation shielding layer |