| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 07/29/2004 | US20040145000 Tri-gate and gate around MOSFET devices and methods for making same |
| 07/29/2004 | US20040144999 Integrated circuit device |
| 07/29/2004 | US20040144998 Integrated circuit modification using well implants |
| 07/29/2004 | US20040144994 Apparatus and methods for optically-coupled memory systems |
| 07/29/2004 | US20040144993 Lateral transistor |
| 07/29/2004 | US20040144992 IGBT with monolithic integrated antiparallel diode |
| 07/29/2004 | US20040144991 Compound semiconductor device and method for fabricating the same |
| 07/29/2004 | US20040144988 Active matric display device including polycrystalline silicon thin film transistor and manufacturing method of the same |
| 07/29/2004 | US20040144985 Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
| 07/29/2004 | US20040144983 Light emitting device, for use in portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal |
| 07/29/2004 | US20040144982 Light emitting device and fabrication method thereof |
| 07/29/2004 | US20040144981 Semiconductor device and methods of manufacturing the same |
| 07/29/2004 | US20040144980 Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers |
| 07/29/2004 | US20040144979 Complementary metal oxide semiconductor (CMOS) inverter constructions, such as, for example, inverter constructions comprising semiconductor-on-insulator (SOI) thin film transistor devices |
| 07/29/2004 | US20040144978 Organic light emitting device with constant luminance |
| 07/29/2004 | US20040144970 Nanowires |
| 07/29/2004 | US20040144969 Deformation of a mesh grid is prevented |
| 07/29/2004 | DE19842441B4 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation |
| 07/29/2004 | DE19825524B4 Dünnfilmtransistor und Verfahren zu seiner Herstellung A thin film transistor and method for its preparation |
| 07/29/2004 | DE19811624B4 Aktives Paneel für eine LCD und Herstellungsverfahren für ein aktives Paneel einer LCD Active panel for an LCD and method for manufacturing an active panel of an LCD |
| 07/29/2004 | DE19800655B4 Dünnschichttransistoranordnung und Betriebsverfahren für eine Dünnschichttransistoranordnung Thin film transistor array and operating method for a thin film transistor array |
| 07/29/2004 | DE19723330B4 Verfahren zur Herstellung von Dünnschichttransistoren und Dünnschichttransistor A process for the manufacture of thin film transistors and thin film transistor |
| 07/29/2004 | DE19718394B4 Dünnfilmtransistor und Verfahren zu seiner Herstellung A thin film transistor and method for its preparation |
| 07/29/2004 | DE10343564A1 Verfahren zum Herstellen eines Oxinitridfilms A method for producing a oxynitride film |
| 07/29/2004 | DE10153619B4 Verfahren zur Herstellung eines Gate-Schichtenstapels für eine integrierte Schaltungsanordnung und integrierte Schaltungsanordnung A method for producing a gate-layer stack for an integrated circuit arrangement and integrated circuit arrangement |
| 07/28/2004 | EP1441393A2 Integrated semiconductor device and method of manufacturing thereof |
| 07/28/2004 | EP1441392A1 Magnetic memory device |
| 07/28/2004 | EP1440473A2 Thermally balanced power transistor |
| 07/28/2004 | EP1440464A2 QUICK PUNCH THROUGH IGBT HAVING GATE−CONTROLLABLE i d /i i i /d /i t AND REDUCED EMI DURING INDUCTIVE TURN OFF i /i |
| 07/28/2004 | EP1440450A2 Superhard dielectric compounds and methods of preparation |
| 07/28/2004 | EP1440428A2 Active matrix display device |
| 07/28/2004 | EP1440182A2 Corrosion-proof pressure transducer |
| 07/28/2004 | EP1012878B1 Reduction of charge loss in nonvolatile memory cells by phosphorous implantation into pecvd nitride/oxynitride films |
| 07/28/2004 | EP0897594B1 Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion |
| 07/28/2004 | CN1516917A Electron tunneling device |
| 07/28/2004 | CN1516903A SOI device with reduced junction capacitance |
| 07/28/2004 | CN1516902A Intermediate manuafcture for dual-gate logic device |
| 07/28/2004 | CN1516900A Semiconductor integrated circuit apparatus and its manufacturing method |
| 07/28/2004 | CN1516530A Double-plate type organic electroluminescent display and mfg. method thereof |
| 07/28/2004 | CN1516293A Method for mfg. semiconductor structural component and method for mfg. solar cell |
| 07/28/2004 | CN1516288A Semiconductor device and mfg. method, delamination method and transfer method |
| 07/28/2004 | CN1516287A Tunneling biasing metal oxide semiconductor transistor |
| 07/28/2004 | CN1516286A Metal-insulating-graphitized carbon field effect transistor |
| 07/28/2004 | CN1516285A Semiconductor device with microwave bipolar transistor |
| 07/28/2004 | CN1516282A 电子电路 Electronic circuit |
| 07/28/2004 | CN1516281A Electronic circuit |
| 07/28/2004 | CN1516259A Semiconductor integrated circuit device and its manufacturing method |
| 07/28/2004 | CN1516244A Film photoetching method |
| 07/28/2004 | CN1516234A Separating method |
| 07/28/2004 | CN1516198A Data reservation of local trapped type nonvolatile memory |
| 07/28/2004 | CN1516090A Transistor circuit, display panel and electronic device |
| 07/28/2004 | CN1515948A Thin film transistor panel for liquid crystal display |
| 07/28/2004 | CN1515945A Pixel structure and film transistor array |
| 07/28/2004 | CN1515942A Transmission-type liquid crystal display device and mfg. method thereof |
| 07/28/2004 | CN1515929A Apparatus with display zone, liquid crystal device and projection display device |
| 07/28/2004 | CN1159770C Semiconductor device and mfg. method thereof |
| 07/28/2004 | CN1159769C Single-electron transistor and its preparing process |
| 07/28/2004 | CN1159768C Horizontal heterojunction dual-polar triode and its mfg. method |
| 07/28/2004 | CN1159765C Semiconductor memory device and manufacturing method thereof |
| 07/28/2004 | CN1159752C Deep turf mask capable of intensifying performance and reliability of buried channel P field effect transistor |
| 07/27/2004 | US6768681 Non-volatile memory device |
| 07/27/2004 | US6768662 Semiconductor memory device including an SOI substrate |
| 07/27/2004 | US6768521 Method for manufacturing a thin film transistor array panel |
| 07/27/2004 | US6768480 Active matrix display device and inspection method therefor |
| 07/27/2004 | US6768400 Microstrip line having a linear conductor layer with wider and narrower portions |
| 07/27/2004 | US6768339 Five volt tolerant input scheme using a switched CMOS pass gate |
| 07/27/2004 | US6768260 Cathode over electroluminescent layer over anode over reflective film; brightness, accuracy |
| 07/27/2004 | US6768259 Flattening insulation layer embeds recesses and projections with coating; electroluminescence; |
| 07/27/2004 | US6768201 Interlevel insulating film covers gate electrode |
| 07/27/2004 | US6768195 Multi-chip semiconductor device |
| 07/27/2004 | US6768180 Superjunction LDMOST using an insulator substrate for power integrated circuits |
| 07/27/2004 | US6768179 CMOS of semiconductor device and method for manufacturing the same |
| 07/27/2004 | US6768177 Parallel plate diode |
| 07/27/2004 | US6768174 Complementary MOS transistors having p-type gate electrodes |
| 07/27/2004 | US6768173 Implanting and diffusing n-type dopant into p-type semiconductor; growing epitaxial layer; |
| 07/27/2004 | US6768172 High-voltage transistor with multi-layer conduction region |
| 07/27/2004 | US6768171 High-voltage transistor with JFET conduction channels |
| 07/27/2004 | US6768170 Superjunction device with improved avalanche capability and breakdown voltage |
| 07/27/2004 | US6768169 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage |
| 07/27/2004 | US6768168 Insulated gate semiconductor device with low on voltage and manufacturing method thereof |
| 07/27/2004 | US6768167 Trench formed in p base region positioned adjacent gate electrode and doped with n-type impurity using gate electrode as mask to form drain/drift region; on-resistance and switching time improvement |
| 07/27/2004 | US6768166 Vertical transistor, memory arrangement and method for fabricating a vertical transistor |
| 07/27/2004 | US6768165 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| 07/27/2004 | US6768164 Stacked gate flash memory device and method of fabricating the same |
| 07/27/2004 | US6768163 Nonvolatile semiconductor memory device and nonvolatile semiconductor memory system |
| 07/27/2004 | US6768162 Split gate flash memory cell and manufacturing method thereof |
| 07/27/2004 | US6768161 Semiconductor device having floating gate and method of producing the same |
| 07/27/2004 | US6768160 Non-volatile memory cell and method of programming for improved data retention |
| 07/27/2004 | US6768159 Semiconductor device using a polysilicon layer |
| 07/27/2004 | US6768158 Flash memory element and manufacturing method thereof |
| 07/27/2004 | US6768156 Non-volatile random access memory cells associated with thin film constructions |
| 07/27/2004 | US6768154 Semiconductor device |
| 07/27/2004 | US6768153 Semiconductor device |
| 07/27/2004 | US6768151 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same |
| 07/27/2004 | US6768150 Magnetic memory |
| 07/27/2004 | US6768149 Tapered threshold reset FET for CMOS imagers |
| 07/27/2004 | US6768147 Semiconductor device and method of fabricating the same |
| 07/27/2004 | US6768146 III-V nitride semiconductor device, and protection element and power conversion apparatus using the same |
| 07/27/2004 | US6768141 Heterojunction bipolar transistor (HBT) having improved emitter-base grading structure |
| 07/27/2004 | US6768140 Structure and method in an HBT for an emitter ballast resistor with improved characteristics |