Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2004
08/12/2004US20040156238 Nonvolatile semiconductor memory and operating method of the memory
08/12/2004US20040156233 TFT-based random access memory cells comprising thyristors
08/12/2004US20040156164 Novel gate dielectric
08/12/2004US20040155992 Method of manufacturing an array substrate for use in a LCD device
08/12/2004US20040155846 Transparent active-matrix display
08/12/2004US20040155838 Apparatus and method for testing pixels of flat panel display
08/12/2004US20040155736 Electrostatic RF MEMS switches
08/12/2004US20040155719 Voltage controlled oscillating circuit
08/12/2004US20040155692 Power device with bi-directional level shift circuit
08/12/2004US20040155360 thermally conductive material is in physical contact with at least one of the die first surface, second surface and sidewall surface to alleviate overheating
08/12/2004US20040155353 Semiconductor device and method of manufacturing semiconductor device
08/12/2004US20040155331 Packaged microelectronic devices and methods for packaging microelectronic devices
08/12/2004US20040155323 Semiconductor device
08/12/2004US20040155317 Transistor constructions and electronic devices
08/12/2004US20040155315 Circuits and methods to protect a gate dielectric antifuse
08/12/2004US20040155304 Semiconductor device and method for fabricating the same
08/12/2004US20040155303 Power switching device
08/12/2004US20040155300 Low voltage NMOS-based electrostatic discharge clamp
08/12/2004US20040155299 Memory devices and electronic systems comprising integrated bipolar and FET devices
08/12/2004US20040155298 Memory devices and electronic systems comprising integrated bipolar and FET devices
08/12/2004US20040155297 Semiconductor device and manufacturing method for the same
08/12/2004US20040155296 Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions and methods of fabricating the same
08/12/2004US20040155295 Thin film transistor and display using the same
08/12/2004US20040155288 Semiconductor device and method for fabricating the same
08/12/2004US20040155287 Power semiconductor switching element
08/12/2004US20040155286 Semiconductor device with enhanced drain and gate
08/12/2004US20040155285 drift zones of first conductor type in strip or column form are embedded in the drift zone of second conductor type, which are connected to the cathode metal, so that its potential does not float
08/12/2004US20040155284 Non-volatile SONOS memory device and method for manufacturing the same
08/12/2004US20040155283 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
08/12/2004US20040155281 Semiconductor device formed on a SOI substrate
08/12/2004US20040155280 Memory cell and method for fabricating same
08/12/2004US20040155278 Semiconductor device, apparatus and method for manufacturing the same
08/12/2004US20040155276 gate insulating film made by forming a titanium silicate film on surface of silicon substrate, forming thereon a titanium oxide film; diffusion of oxygen atoms from titanium oxide film to the silicon substrate can be prevented
08/12/2004US20040155271 Reliable semiconductor device and method of manufacturing the same
08/12/2004US20040155270 for driving display devices known as "heads-up" displays and "augmented reality" displays which allow a user to view a real environment beyond the screen of the display
08/12/2004US20040155268 gate stack including: a layer of polysilicon; a layer of tungsten nitride on the layer of polysilicon, wherein the ratio of nitrogen to tungsten is below about 0.7 at; layer of tungsten on layer of tungsten nitride; anda layer of nitride
08/12/2004US20040155266 Method of manufacturing a semiconductor device and a device manufactured by the method
08/12/2004US20040155265 Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor device
08/12/2004US20040155262 Self-aligned bipolar transistor
08/12/2004US20040155261 Schottky electrode that is formed on Schottky layer (In and P compounds) with a Schottky contact (with La and B material on electrode);
08/12/2004US20040155260 high frequency, high power or low noise devices; hetero-structure field-effect transistors
08/12/2004US20040155259 Field-effect semiconductor device and method for making the same
08/12/2004US20040155258 Semiconductor device
08/12/2004US20040155257 Semiconductor device
08/12/2004US20040155256 Field effect transistor
08/12/2004US20040155253 Single electron transistor having memory function and method of manufacturing the same
08/12/2004US20040155250 Nitride compound semiconductor element
08/12/2004US20040155249 Optical semiconductor apparatus
08/12/2004US20040155248 Nitride semiconductor device
08/12/2004US20040155246 Semiconductor film and method of forming the same, and semiconductor device and display apparatus using the semiconductor film
08/12/2004US20040155245 Thin film transistor and method for manufacturing the same
08/12/2004US20040155244 Transistor and method of manufacturing the same, electro-optical device, semiconductor device, and electronic apparatus
08/12/2004US20040155242 Semiconductor device and its manufacturing method
08/12/2004US20040155239 Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof
08/12/2004US20040155234 Nonvolatile semiconductor memory device
08/12/2004US20040155019 small footprint; focus position of a linear shape beam is adjusted by providing cylindrical shape curvature to a substrate annealed by a linear shape beam allowing an extremely uniform energy distribution
08/12/2004US20040155011 Method of forming sub-micron-size structures over a substrate
08/12/2004DE10316710B3 Making semiconductor layer with compensation structure for MOS transistor manufacture employs thermal oxidation conversion reaction influencing local dopant concentrations
08/11/2004EP1445802A1 Transistor for active matrix display, a display unit comprising the said transistor and a method for producing said transistor
08/11/2004EP1445793A2 Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device
08/11/2004EP1445354A2 Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
08/11/2004EP1444780A1 Semiconductor circuit, especially for ignition purposes, and the use of the same
08/11/2004EP1444725A1 Low-temperature post-dopant activation process
08/11/2004EP1444544A1 Active matrix pixel device
08/11/2004EP1181723B1 Double gate mosfet transistor and method for the production thereof
08/11/2004EP1012882A4 Multiple gated mosfet for use in dc-dc converter
08/11/2004CN1520618A Laser parrering of devices
08/11/2004CN1520616A Power semiconductor devices having laterally extending base shielding regions that inhibit base reach through and methodds of forming same
08/11/2004CN1520615A Trench schottky rectifier
08/11/2004CN1520614A Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making same
08/11/2004CN1520610A Novel dram access transistor
08/11/2004CN1520595A Ferroelectric memory and operating method therefor
08/11/2004CN1519955A Thin film transistor array panel, its mfg. method and mask for such panel
08/11/2004CN1519954A Semiconductor element
08/11/2004CN1519953A Semiconductor device and its mfg. method
08/11/2004CN1519952A Single electronic transistor having memory function and its mfg. method
08/11/2004CN1519951A Charge transfer component
08/11/2004CN1519946A 半导体器件 Semiconductor devices
08/11/2004CN1519942A Strong dielectric storage and its mfg. method
08/11/2004CN1519938A Nonvolatile semiconductor storage, its mfg. method and semiconductor integrated circuit and system
08/11/2004CN1519937A 半导体器件 Semiconductor devices
08/11/2004CN1519936A Semiconductor circuit device and imitation method of such circuit
08/11/2004CN1519935A Integrated circuit device and its mfg. method
08/11/2004CN1519933A Semiconductor device and its mfg. method
08/11/2004CN1519929A Semiconductor chip and its mfg. method
08/11/2004CN1519928A Semiconductor device and its mfg. method
08/11/2004CN1519927A 半导体装置 Semiconductor device
08/11/2004CN1519901A Semiconductor device having grid electrode of multiple metalic grid structure treated by side nitridation in ammonia
08/11/2004CN1519888A Buffer layer capable of promoting electron mobility raising and thin film transistor containing the buffer layer
08/11/2004CN1519793A Mfg. method of displaying element
08/11/2004CN1519634A Electrooptical device
08/11/2004CN1519633A Electrooptical device and electronic device
08/11/2004CN1519631A Film transistor, TFT substrate and LCD
08/11/2004CN1519629A Liquid crystal display manufactured from thin film transistors as well as manufacturing method
08/11/2004CN1161843C Closed transistor with small W/L ratios
08/11/2004CN1161842C Semiconductor device with microwave bipolar transistor
08/11/2004CN1161841C Dynamic RAM
08/11/2004CN1161840C Analogue switch
08/11/2004CN1161831C Semiconductor device and its producing method
08/11/2004CN1161830C Semiconductor elements and mfg. method therefor