Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
10/06/2005 | US20050218439 Semiconductor device and method of manufacturing the same |
10/06/2005 | US20050218438 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
10/06/2005 | US20050218437 Raw material solution, ferroelectric film, method for manufacturing ferroelectric film, piezoelectric element, piezoelectric actuator, ink jet recording head, and ink jet printer |
10/06/2005 | US20050218435 Semiconductor integrated circuit device and production method thereof |
10/06/2005 | US20050218434 Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same |
10/06/2005 | US20050218433 Dual metal schottky diode |
10/06/2005 | US20050218432 Semiconductor apparatus having a large-size bus connection |
10/06/2005 | US20050218431 High voltage lateral FET structure with improved on resistance performance |
10/06/2005 | US20050218430 Fast switching diode with low leakage current |
10/06/2005 | US20050218428 Gallium arsenide antimonide (GaAsSb)/Indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability |
10/06/2005 | US20050218427 Method for making a FET channel |
10/06/2005 | US20050218425 Semiconductor device and method of manufacture therefor |
10/06/2005 | US20050218424 Semiconductor device |
10/06/2005 | US20050218423 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor |
10/06/2005 | US20050218421 Methods for packaging a light emitting device and packaged light emitting devices |
10/06/2005 | US20050218415 Semiconductor light-emitting device |
10/06/2005 | US20050218414 4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate |
10/06/2005 | US20050218412 Light emitting transistor |
10/06/2005 | US20050218410 Thin film transistor and pixel structure thereof |
10/06/2005 | US20050218409 Organic light emitting display |
10/06/2005 | US20050218408 Semiconductor devices having elongated contact plugs and methods of manufacturing the same |
10/06/2005 | US20050218407 Array substrate, liquid crystal display device and method of manufacturing array substrate |
10/06/2005 | US20050218406 High-density plasma oxidation for enhanced gate oxide performance |
10/06/2005 | US20050218405 Non-volatile memory and semiconductor device |
10/06/2005 | US20050218404 Reflective liquid crystal display device |
10/06/2005 | US20050218403 [low-temperature polysilicon thin film transistor and fabrication method thereof] |
10/06/2005 | US20050218402 Thin-film transistor substrate, display device, CAD program and transfer method for thin-film transistor substrate |
10/06/2005 | US20050218400 Light emitting device, driving method for the same and electronic apparatus |
10/06/2005 | US20050218399 Method of fabrication sige heterojunction bipolar transistor |
10/06/2005 | US20050218398 NANO-electronics |
10/06/2005 | US20050218397 NANO-electronics for programmable array IC |
10/06/2005 | US20050218396 Display device |
10/06/2005 | US20050218395 Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methods |
10/06/2005 | US20050217578 Reactor having a movable shutter |
10/06/2005 | US20050217563 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation |
10/06/2005 | US20050217386 Semiconductor force sensor |
10/06/2005 | US20050217373 Inertial sensor |
10/06/2005 | DE19929211B4 Verfahren zur Herstellung eines MOS-Transistors sowie einer DRAM-Zellenanordung A method for making a MOS transistor, and a DRAM Zellenanordung |
10/06/2005 | DE19919130B4 Monolithisch integrierte Halbleiteranordnung mit einem Steuerbereich und einem spannungsaufnehmenden Bereich Monolithic integrated semiconductor arrangement having a control region and a voltage-receiving area |
10/06/2005 | DE19811568B4 Halbleitervorrichtung mit einem Leistungshalbleiterelement A semiconductor device having a power semiconductor element |
10/06/2005 | DE10393687T5 Doppelgatehalbleiterbauelement mit separaten Gates Double gate semiconductor device having separate gates |
10/06/2005 | DE10392313T5 Auf Galliumnitrid basierende Vorrichtungen und Herstellungsverfahren Gallium nitride-based devices and manufacturing processes |
10/06/2005 | DE10360513B4 Integrated semiconductor circuit chip with DMOS power transistor structure has thick high current heat conductive metal layers between transistor and metal rails on chip surface |
10/06/2005 | DE10355063B3 Method for simultaneously producing gate, source, body and drain contact regions in a layer structure used in the manufacture of semiconductor transistors comprises applying a first mask on a conductor layer and selectively ion beam etching |
10/06/2005 | DE10212144B4 Transistoranordnung mit einer Struktur zur elektrischen Kontaktierung von Elektroden einer Trench-Transistorzelle Transistor device having a structure for electrically contacting electrodes of a trench transistor cell |
10/06/2005 | DE102005006899A1 Gate-Struktur, Halbleitervorrichtung mit dieser Gate-Struktur, sowie Verfahren zum Ausbilden der Gate-Struktur und der Halbleitervorrichtung Gate structure, the semiconductor device having this gate structure, and method of forming the gate structure and the semiconductor device |
10/06/2005 | DE102005000825A1 Epitaxie-Halbleiterbauelement der ZnO-Gruppe und deren Herstellung Epitaxial semiconductor device of the ZnO-group and their preparation |
10/06/2005 | DE102004013405A1 Power semiconductor component has optimized edge region and more weakly doped zone between inner and edge zones |
10/06/2005 | DE102004012884A1 Leistungs-Halbleiterbauelement in Planartechnik Power semiconductor device in planar |
10/06/2005 | DE102004006002B3 Soi-Halbleiterbauelement mit erhöhter Spannungsfestigkeit SOI semiconductor device with increased dielectric strength |
10/06/2005 | DE102004005694B3 Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren Grave capacitor insulation collar and manufacturing method thereof |
10/06/2005 | DE102004003084B3 Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren A semiconductor memory cell, and manufacturing method thereof |
10/06/2005 | DE10131706B4 Verfahren zur Herstellung eines DMOS-Transistors A process for the preparation of a DMOS transistor |
10/05/2005 | EP1583405A2 Circuitized substrate, method of making same, electrical assembly utilizing same, and information handling system utilizing same |
10/05/2005 | EP1583165A1 Thin-film field-effect transistors and making method |
10/05/2005 | EP1583161A1 Structurally gradient material and functional element including the same |
10/05/2005 | EP1583154A1 P-type nitride semiconductor structure and bipolar transistor |
10/05/2005 | EP1583153A1 GaAsSb/InP heterojunction bipolar transistor and method of fabricating the same |
10/05/2005 | EP1583152A2 Semiconductor device with lightly doped layer and method of manufacturing the same |
10/05/2005 | EP1583151A2 Active pixel having buried transistor |
10/05/2005 | EP1583148A1 Semiconductor device and its fabricating method |
10/05/2005 | EP1583143A2 Method of fabricating self-aligned source and drain contacts in a Double gate FET with controlled manufacturing of a thin Si or non-Si channel |
10/05/2005 | EP1583139A1 Method for depositing a group III-nitride material on a silicon substrate and device therefor |
10/05/2005 | EP1583115A1 Metalized film capacitor |
10/05/2005 | EP1583104A2 Nanometric mechanical oscillator, method of fabricating the same, and measurement apparatus using the same |
10/05/2005 | EP1583101A1 Integrated code and data flash memory |
10/05/2005 | EP1582879A1 Inertial sensor |
10/05/2005 | EP1582877A1 Micro-mechanical semiconductor accelerometer |
10/05/2005 | EP1581986A2 Temperature insensitive quantum dot lasers and photonic gain devices having proximity-placed acceptor impurities, and methods therefor |
10/05/2005 | CN2731722Y ZnO-base transparent thin film transistor |
10/05/2005 | CN2731721Y Integrated circuit component |
10/05/2005 | CN2731719Y Semiconductor structure having recess-resistant insulating layer |
10/05/2005 | CN2731718Y Semiconductor device having multiple silicide types |
10/05/2005 | CN1679173A Gate electrode and manufacturing method thereof |
10/05/2005 | CN1679172A Organic semiconductor device and its manufacturing method |
10/05/2005 | CN1679171A TFT array substrate, liquid crystal display device, manufacturing methods of TFT array substrate and liquid crystal display device, and electronic device |
10/05/2005 | CN1679170A Thin film transistor, liquid crystal display apparatus, manufacturing method |
10/05/2005 | CN1679169A Semiconductor device and method for fabricating the same |
10/05/2005 | CN1679166A Flash memory cell and the method of making separate sidewall oxidation |
10/05/2005 | CN1679159A Silicon-on-insulator wafer for RF integrated circuit |
10/05/2005 | CN1679152A Pattern formation substrate and method of pattern formation |
10/05/2005 | CN1679151A Semiconductor device and method for manufacturing semiconductor device |
10/05/2005 | CN1679149A Nitrogen passivation of interface states in SIO2/SIC structures |
10/05/2005 | CN1679110A Differential floating gate nonvolatile memories |
10/05/2005 | CN1679010A High speed differential pre-driver using common mode pre-charge |
10/05/2005 | CN1678952A Manufacture of electronic devices comprising thin-film circuit elements |
10/05/2005 | CN1678772A Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
10/05/2005 | CN1678561A Spirobifluorene derivatives, their preparation and uses thereof |
10/05/2005 | CN1677839A Oscillator with tunable diffusion capacitance as resonant circuit capacitance |
10/05/2005 | CN1677783A Semiconductor laser apparatus |
10/05/2005 | CN1677703A Nitride-based light-emitting device and method of manufacturing the same |
10/05/2005 | CN1677693A Semiconductor device and method of manufacture therefor |
10/05/2005 | CN1677692A Super-junction semiconductor element and method of fabricating the same |
10/05/2005 | CN1677691A Semiconductor device and method of manufacturing semiconductor device |
10/05/2005 | CN1677690A Semiconductor device including bipolar junction transistor with protected emitter-base junction |
10/05/2005 | CN1677689A 半导体装置 Semiconductor device |
10/05/2005 | CN1677688A 半导体装置 Semiconductor device |
10/05/2005 | CN1677687A Semiconductor device manufacturing method thereof |
10/05/2005 | CN1677686A Micro-switching device and method of manufacturing micro-switching device |
10/05/2005 | CN1677680A Nonvolatile semiconductor memory and driving method the same |