Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2005
09/22/2005US20050205867 Semiconductor device and method of manufacturing the same
09/22/2005US20050205866 Thin film transistor array panel for liquid crystal display and method of manufacturing the same
09/22/2005US20050205863 Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing the same
09/22/2005US20050205861 P-type OFET with fluorinated channels
09/22/2005US20050205859 Shallow trench isolation process
09/22/2005US20050205858 Transistor with shallow germanium implantation region in channel
09/22/2005US20050205857 QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions
09/22/2005US20050205585 Compound container
09/22/2005US20050205515 Process for producing structural body and etchant for silicon oxide film
09/22/2005US20050204821 Micromechanical component having a diaphragm, and method for manufacturing such a component
09/22/2005US20050204816 Semiconductor dynamic quantity sensor
09/22/2005DE4329838B4 Festkörper-Bildsensor Solid-state image sensor
09/22/2005DE19981445B4 Leistungshalbleiter mit reduziertem Sperrstrom Power semiconductors with reduced off-state current
09/22/2005DE19932959B4 Halbleitervorrichtung und diese verwendende Halbleiterschaltung Semiconductor device and this use semiconductor circuit
09/22/2005DE19909815B4 Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung A semiconductor device and manufacturing method of a semiconductor device
09/22/2005DE19900313B4 Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung A semiconductor device and manufacturing method of a semiconductor device
09/22/2005DE19730957B4 Halbleitereinrichtung Semiconductor device
09/22/2005DE10249897B4 Selbstjustierendes Verfahren zur Herstellung eines Transistors Self-aligning method of manufacturing a transistor
09/22/2005DE10245050B4 IGBT mit integriertem Freilaufelement und Halbleiterschaltungsanordnung IGBT with integrated freewheeling element and semiconductor circuitry
09/22/2005DE10230696B4 Verfahren zur Herstellung eines Kurzkanal-Feldeffekttransistors A process for producing a short-channel field effect transistor
09/22/2005DE102005011300A1 Vorspannungsschaltung, Festkörper-Abbildungssystem und zugehöriges Herstellungsverfahren Bias, solid-state imaging system and manufacturing method thereof
09/22/2005DE102005008097A1 Flip-Chip-Lichtemissionsbauteil Flip-chip light emitting device
09/22/2005DE102004063523A1 Halbleitervorrichtung Semiconductor device
09/22/2005DE102004011234A1 Thyristor ignition sensitivity adjusting method, involves sequently arranging p-doped emitter, n-doped base, p-doped base and n-doped main emitter in semiconductor body
09/22/2005DE102004010295A1 Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren Micro-mechanical device and manufacturing method thereof
09/22/2005DE102004009600A1 Selbstorganisierende organische Dielektrikumsschichten auf der Basis von Phosphonsäure-Derivaten Self-organizing organic dielectric layers on the basis of phosphonic acid derivatives
09/22/2005DE102004009323A1 Vertical diffusion metal oxide semiconductor transistor, as a power transistor cell structure, has trenches to give an avalanche flow below them and a flow path through the trench centers
09/22/2005DE102004009083A1 MOS power transistor device, has vertical transistor structures with body zone that includes implantation body enhancement zone and having doping concentration greater than concentration of body zone and smaller than body-contact zone
09/22/2005DE102004009082A1 Power MOSFET for motor vehicle technology has vertical power MOSFET in semiconductor body with adjacent temperature sensor over insulation filled cavity
09/21/2005EP1577965A1 A p-type OFET with channels of fluorinated organic compounds
09/21/2005EP1577963A2 Flat panel display device
09/21/2005EP1577962A1 Functional molecular element and functional molecular device
09/21/2005EP1577953A2 Semiconductor memory device and manufacturing method for the same
09/21/2005EP1577952A1 High voltage insulated gate field-effect transistor and method of making the same
09/21/2005EP1577951A2 A semiconductor device and method of its manufacture
09/21/2005EP1577943A2 Semiconductor substrate, manufacturing method therefor, and semiconductor device
09/21/2005EP1577936A1 Semiconductor sensor and plating method for semiconductor device
09/21/2005EP1577912A1 Thin film capacitor and method for manufacturing same
09/21/2005EP1576672A2 Silicon carbide power mos field effect transistors and manufacturing methods
09/21/2005EP1576669A1 Power integrated circuits
09/21/2005EP1576668A1 Multi-level memory cell with lateral floating spacers
09/21/2005EP1576661A2 Vertical split gate non-volatile memory cell and method of fabrication thereof
09/21/2005EP1576657A2 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
09/21/2005EP1576651A2 A modular bipolar-cmos-dmos analog integrated circuit and power transistor technology
09/21/2005EP1454333A4 Mems device having a trilayered beam and related methods
09/21/2005EP1097482B1 J-fet semiconductor device
09/21/2005CN2727805Y 液晶显示装置 The liquid crystal display device
09/21/2005CN2727802Y 液晶显示装置 The liquid crystal display device
09/21/2005CN2727801Y Trans-reflective liquid crystal display device and color filter
09/21/2005CN2727800Y 液晶面板 LCD panel
09/21/2005CN2727798Y Array base plate of active matrix liquid crystal display panel
09/21/2005CN2727797Y Low-temperature polysilicon display device
09/21/2005CN2727796Y Low-temperature polysilicon thin-film transistor base plate
09/21/2005CN2727795Y In-plane switching type liquid crystal display device
09/21/2005CN1672265A 垂直nrom Vertical nrom
09/21/2005CN1672264A 场效应晶体管 FET
09/21/2005CN1672263A Field effect transistor and method of manufacturing same
09/21/2005CN1672262A Partially depleted soi mosfet with self-aligned body tie
09/21/2005CN1672257A Trench schottky barrier diode
09/21/2005CN1672244A Hafnium-aluminum oxide dielectric films
09/21/2005CN1672243A Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
09/21/2005CN1672241A Integrated driver process flow
09/21/2005CN1672217A Method and apparatus for erasing flash memory
09/21/2005CN1671255A Display device
09/21/2005CN1671038A Voltage control oscillator
09/21/2005CN1670979A Phase change memory cell on silicon-on insulator substrate
09/21/2005CN1670966A Thin-film transistor element
09/21/2005CN1670965A Transistor with dopant-bearing metal in source and drain
09/21/2005CN1670964A MOSFET and a method of making same
09/21/2005CN1670963A Neuron synaptic bouton simulated flexible triode
09/21/2005CN1670960A Memory device and method of manufacturing the same
09/21/2005CN1670959A Semiconductor integrated circuit device
09/21/2005CN1670958A Sonos type memory device
09/21/2005CN1670956A Semiconductor substrate, manufacturing method therefor, and semiconductor device
09/21/2005CN1670954A Semiconductor device and method for manufacturing the same
09/21/2005CN1670953A 半导体装置 Semiconductor device
09/21/2005CN1670943A Operating method of the memory
09/21/2005CN1670941A Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby
09/21/2005CN1670937A Non-volatile memory evaluating method and non-volatile memory
09/21/2005CN1670929A Method of manufacturing transistor
09/21/2005CN1670927A MOSFET and manufacturing method thereof
09/21/2005CN1670926A Thin-film transistor and method for manufacturing same
09/21/2005CN1670921A Polysiliconized metal grid structure and method for making same
09/21/2005CN1670917A Method for making compound semiconductor and method for making semiconductor device
09/21/2005CN1670915A Semiconductor device and manufacturing method thereof
09/21/2005CN1670909A 薄膜晶体管阵列面板及其制造方法 The thin film transistor array panel and a manufacturing method
09/21/2005CN1670908A Method to make markers for double gate SOI processing
09/21/2005CN1670907A Method of manufacturing substrate joint body, substrate joint body and electrooptical device
09/21/2005CN1670859A Semiconductor memory device provided with magneto-resistive element and method for fabricating the same
09/21/2005CN1670811A Driving apparatus for driving an LCD monitor
09/21/2005CN1670600A Image display device
09/21/2005CN1670599A Active matrix liquid crystal display
09/21/2005CN1670598A Process for preparing active matrix LCD arrangement with pattern active layers
09/21/2005CN1670597A Image display panel and level shifter
09/21/2005CN1670583A Liquid crystal panel and its producing method
09/21/2005CN1670580A Semiconductor chip and display device using the same
09/21/2005CN1220275C Planar two-terminal switch
09/21/2005CN1220274C Self-aligned non-volatile memory cell
09/21/2005CN1220273C Trench MOSFET device with double-diffuser distribution and making method
09/21/2005CN1220272C Current carrier extracting transistor
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