Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2005
09/15/2005US20050199916 Method and device for a main board commonly associated with DDR2 or DDR1
09/15/2005US20050199915 Semiconductor integrated circuit and method of redesigning same
09/15/2005US20050199914 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried floating gate and pointed channel region
09/15/2005US20050199913 Word and bit line arrangement for a FinFET semiconductor memory
09/15/2005US20050199912 Semiconductor memory with vertical memory transistors in a cell array arrangement with 1-2F2 cells
09/15/2005US20050199911 Semiconductor element and method for fabricating the same
09/15/2005US20050199910 Hetero-junction bipolar transistor and manufacturing method thereof
09/15/2005US20050199909 Heterojunction bipolar transistor and manufacturing method thereof
09/15/2005US20050199908 Method of base formation in a bicmos process
09/15/2005US20050199907 Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base
09/15/2005US20050199906 Split poly-SiGe/poly-Si alloy gate stack
09/15/2005US20050199905 Semiconductor device and method of manufacturing semiconductor device
09/15/2005US20050199904 Light emitting device of III-V group compound semiconductor and fabrication method therefor
09/15/2005US20050199901 Semiconductor device and method for fabricating the same
09/15/2005US20050199900 Light-emitting device with high heat-dissipating efficiency
09/15/2005US20050199899 Package array and package unit of flip chip LED
09/15/2005US20050199898 Light-emitting diode with micro-lens layer
09/15/2005US20050199895 Nitride-based light-emitting device and method of manufacturing the same
09/15/2005US20050199894 Semiconductor device and method using nanotube contacts
09/15/2005US20050199892 Monolithic white light emitting device
09/15/2005US20050199891 Nitride-based semiconductor light-emitting device
09/15/2005US20050199889 Electro-optical device and electronic apparatus
09/15/2005US20050199886 Nitride semiconductor device and method of manufacturing the same
09/15/2005US20050199883 Method for depositing a group III-nitride material on a silicon substrate and device therefor
09/15/2005US20050199882 Self-aligned silicon carbide semiconductor devices and methods of making the same
09/15/2005US20050199881 Semiconductor device
09/15/2005US20050199880 Semiconductor device
09/15/2005US20050199879 Semiconductor device
09/15/2005US20050199878 Thin film transistor, semiconductor device, and method for manufacturing the same
09/15/2005US20050199877 Silicon germanium surface layer for high-k dielectric integration
09/15/2005US20050199876 Display device having photosensor and method of fabricating the same
09/15/2005US20050199873 Semiconductor device with heterojunction
09/15/2005US20050199872 Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication
09/15/2005US20050199871 Cold atom system with atom chip wall
09/15/2005US20050199870 Quantum dot structures
09/15/2005US20050199869 Orientated group IV-VI semiconductor structure, and method for making and using the same
09/15/2005US20050199684 Method of semiconductor device assembly including fatigue-resistant ternary solder alloy
09/15/2005US20050199495 Chemical sensor using chemically induced electron-hole production at a schottky barrier
09/15/2005US20050199281 Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
09/15/2005DE4402270B4 Feldeffekttransistoranordnung mit Schottky-Elektrode Field effect transistor device with Schottky electrode
09/15/2005DE19813653B4 Anwenderprogrammierbares Verknüpfungsfeld A field programmable gate array
09/15/2005DE10345186A1 Verfahren zur Herstellung eines Metall-Oxid-Halbleiter Feldeffekttransistors und Metall-Oxid-Halbleiter Feldeffekttransistor A method for producing a metal-oxide-semiconductor field-effect transistor and metal oxide semiconductor field effect transistor
09/15/2005DE102004062956A1 Fabrication of static random access memory device comprises forming two conductor patterns on cell area of substrate and third conductor pattern in periphery area, and forming third spacer on sidewall of third conductor pattern
09/15/2005DE102004058431A1 Semiconductor electronic chip trench system with two nitride materials linked by an interface with an electrical contact channel
09/15/2005DE102004009602A1 Trench-Transistor Trench transistor
09/15/2005DE102004009521A1 Hochvolt-PMOS-Transistor High voltage PMOS transistor
09/15/2005DE102004009087A1 Setting breakdown voltage of thyristor, by introducing p-doped particles to produce p-doped calibration zone in n-doped base
09/15/2005DE102004007991A1 Switching device e.g. for motor in motor vehicle, comprises diode for reverse polarity protection integrated as additional pn-junction or Schottky contact in semiconductor switch
09/15/2005DE102004005948A1 MOS-Transistor und Verfahren zur Herstellung eines MOS-Transistorstruktur MOS transistor and method of manufacturing a MOS transistor structure
09/15/2005DE10162261B4 Speicherzelle mit Grabentransistor Memory cell transistor grave
09/14/2005EP1575098A1 Integrated capacitor
09/14/2005EP1575097A2 Semiconductor device with heterojunction
09/14/2005EP1575096A1 Semiconductor material for electronic device and semiconductor element using same
09/14/2005EP1575095A1 Semiconductor material having bipolar transistor structure and semiconductor device using same
09/14/2005EP1575094A1 Bipolar transistor
09/14/2005EP1575089A1 Highly reliable, cost effective and thermally enhanced AuSn die-attach technology
09/14/2005EP1575083A2 Method of manufacturing a semiconductor device and semiconductor device obtainable with such a method
09/14/2005EP1575082A2 Method for formimg a self-aligned germanide structure
09/14/2005EP1575056A1 Non-volatile memory and write method thereof
09/14/2005EP1574475A2 Integrated driver electronics for MEMS device using high voltage thin film transistors
09/14/2005EP1573824A1 Vertical insulated gate transistor and manufacturing method
09/14/2005EP1573823A1 Dense dual-plane devices
09/14/2005EP1573822A2 Complementary analog bipolar transistors with trench-constrained isolation diffusion
09/14/2005EP1573820A1 Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement, and method for the production of a fin field effect transistor memory cell
09/14/2005EP1573818A2 Semiconductor component with a bipolar lateral power transistor
09/14/2005EP1573811A1 Testable electrostatic discharge protection circuits
09/14/2005EP1573810A2 Method for forming patterns aligned on either side of a thin film
09/14/2005EP1573804A1 Methods of forming structure and spacer and related finfet
09/14/2005EP1573803A2 Integrating n-type and p-type metal gate transistors
09/14/2005EP1573798A1 Manufacture of trench-gate semiconductor devices
09/14/2005EP1573797A1 Method of manufacture of a trench-gate semiconductor device
09/14/2005EP1573793A2 Mis transistor with self-aligned gate and method for making same
09/14/2005EP1573787A2 Method for improved alignment tolerance in a bipolar transistor and related structure
09/14/2005EP1572897A2 Ordered biological nanostructures formed from chaperonin polypeptides
09/14/2005EP1459360A4 Active matrix thin film transistor array backplane
09/14/2005CN2726126Y Fin shaped semiconductor diode structure
09/14/2005CN2726125Y Contact window of semiconductor fin shaped element
09/14/2005CN2726124Y 半导体装置 Semiconductor device
09/14/2005CN2726122Y Digital follower digital storage assemblyl and static random access internal storage
09/14/2005CN2726117Y Wafer with semiconductor on insulation layer
09/14/2005CN1669155A Pseudo-nonvolatile direct-tunneling floating-gate device
09/14/2005CN1669154A Organic semiconductor element, production method therefor and organic semiconductor device
09/14/2005CN1669153A Semiconductor device, production method and production device thereof
09/14/2005CN1669152A Field effect transistor, associated use, and associated production method
09/14/2005CN1669151A Semiconductor device and its manufacturing method
09/14/2005CN1669150A Bipolar transistor
09/14/2005CN1669148A Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
09/14/2005CN1669146A Ferroelectric gate device
09/14/2005CN1669145A Schottky barrier CMOS device and method
09/14/2005CN1669144A Nanoelectronic devices and circuits
09/14/2005CN1669131A Semiconductor device
09/14/2005CN1669123A Semiconductor element with stress-carrying semiconductor layer and corresponding production method
09/14/2005CN1668148A Top-emission organic light-emitting display device and method of fabricating the same
09/14/2005CN1667850A Monolithic white light emitting device
09/14/2005CN1667847A Nitride-based semiconductor light-emitting device
09/14/2005CN1667841A Over-voltage protection device and process for making same
09/14/2005CN1667840A Thin film transistor, semiconductor device, and method for manufacturing the same
09/14/2005CN1667838A High voltage lateral FET structure with improved on resistance performance
09/14/2005CN1667837A Semiconductor device and method for fabricating the same
09/14/2005CN1667836A Heterojunction bipolar transistor and manufacturing method thereof
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