Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2005
10/27/2005US20050239254 Quasi-plannar and FinFET-like transistors on bulk silicon
10/27/2005US20050239253 Integrated circuit structure with improved LDMOS design
10/27/2005US20050239252 Methods of forming integrated circuit devices having field effect transistors of different types in different device regions
10/27/2005US20050239250 Ultra dense non-volatile memory array
10/27/2005US20050239249 Vertical floating gate transistor
10/27/2005US20050239245 Nonvolatile semiconductor memory and method of operating the same
10/27/2005US20050239244 Methods of forming storage nodes for a DRAM array
10/27/2005US20050239243 Methods of forming DRAM arrays
10/27/2005US20050239242 structure and method of manufacturing a finFet device having stacked fins
10/27/2005US20050239241 High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof
10/27/2005US20050239239 Thin-film transistor and method of fabricating the same
10/27/2005US20050239238 Simultaneous planar and non-planar thin-film transistor processes
10/27/2005US20050239227 Light emitting diode component
10/27/2005US20050239219 Process for fabrication of a ferrocapacitor with a large effective area
10/27/2005US20050238905 Vacancy-dominated, defect-free silicon
10/27/2005US20050238019 Techniques to control access to logic
10/27/2005US20050237850 Method and apparatus for improving stability of a 6T CMOS SRAM cell
10/27/2005US20050237847 Semiconductor device with source line and fabrication method thereof
10/27/2005US20050237842 Semiconductor integrated circuit device
10/27/2005US20050237834 Memory device and method of making the same
10/27/2005US20050237817 Semiconductor memory device with MOS transistors, each having a floating gate and a control gate, and memory card including the same
10/27/2005US20050237815 Operation scheme with charge balancing erase for charge trapping non-volatile memory
10/27/2005US20050237813 Method and system for self-convergent erase in charge trapping memory cells
10/27/2005US20050237808 Semiconductor memory device with MOS transistors, each including floating gate and control gate, and memory card including the same
10/27/2005US20050237807 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
10/27/2005US20050237801 Operation scheme with charge balancing for charge trapping non-volatile memory
10/27/2005US20050237797 Memory array
10/27/2005US20050237792 Magnetic memory device structure
10/27/2005US20050237783 Electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
10/27/2005US20050237685 Thin film circuit substrate, piezoelectric speaker device, display device, and sound-generating display device
10/27/2005US20050237683 Semiconductor integrated circuit device
10/27/2005US20050237464 Liquid crystal display
10/27/2005US20050237441 Active matrix substrate for display device and its manufacture method
10/27/2005US20050237409 Solid-state image pickup element and driving method thereof, and camera system
10/27/2005US20050237286 Electronic device and method of driving the same
10/27/2005US20050237282 Image display device
10/27/2005US20050236719 IC module assembly
10/27/2005US20050236715 Nickel alloy salicide transistor structure and method for manufacturing same
10/27/2005US20050236694 Silicon oxycarbide and silicon carbonitride based materials for MOS devices
10/27/2005US20050236693 Wafer stabilization device and associated production method
10/27/2005US20050236692 Semiconductor thin film forming method and semiconductor device
10/27/2005US20050236691 Semiconductor device and manufacturing method for the same
10/27/2005US20050236689 High-frequency amplification device
10/27/2005US20050236688 Fuse regions of a semiconductor memory device and methods of fabricating the same
10/27/2005US20050236687 Strained silicon CMOS on hybrid crystal orientations
10/27/2005US20050236685 Optical device and method for fabricating the same
10/27/2005US20050236682 Method of manufacturing MEMS device
10/27/2005US20050236680 EEPROM and method of fabricating the same
10/27/2005US20050236679 Semiconductor device, and method and apparatus for manufacturing the same
10/27/2005US20050236678 Semiconductor device and method of fabricating the same
10/27/2005US20050236677 Semiconductor device layout and channeling implant process
10/27/2005US20050236676 Semiconductor device
10/27/2005US20050236675 Semiconductor device and manufacturing method thereof
10/27/2005US20050236674 Electrostatic protection device
10/27/2005US20050236672 MOS type semiconductor device having electrostatic discharge protection arrangement
10/27/2005US20050236671 Multi-planar layout vertical thin-film transistor inverter
10/27/2005US20050236668 STRUCTURES AND METHODS FOR MANUFACTURING OF DISLOCATION FREE STRESSED CHANNELS IN BULK SILICON AND SOI CMOS DEVICES BY GATE STRESS ENGINEERING WITH SiGe AND/OR Si:C
10/27/2005US20050236667 Manufacture of semiconductor device with selective amorphousizing
10/27/2005US20050236666 Graded-junction high-voltage MOSFET in standard logic CMOS
10/27/2005US20050236665 Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
10/27/2005US20050236664 Semiconductor device and method of manufacturing thereof
10/27/2005US20050236663 Method of manufacturing a semiconductor device and semiconductor device obtainable with such a method
10/27/2005US20050236662 Flash memory device and method for fabricating the same, and programming and erasing method thereof
10/27/2005US20050236661 Nonvolatile semiconductor memory device having element isolating region of trench type
10/27/2005US20050236660 Semiconductor device and method of fabricating the same
10/27/2005US20050236659 Non-volatile memory cell and method of forming the same
10/27/2005US20050236656 Methods of Forming Memory Arrays; and Methods of Forming Contacts to Bitlines
10/27/2005US20050236655 Semiconductor device manufacturing method and semiconductor device
10/27/2005US20050236652 MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device
10/27/2005US20050236649 DRAM arrays
10/27/2005US20050236647 Structure and method of forming a bipolar transistor having a self-aligned raised extrinsic base using a link-up region formed froman opening therein
10/27/2005US20050236646 Nitride semiconductor device and manufacturing method thereof
10/27/2005US20050236645 Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer
10/27/2005US20050236643 Nitride semiconductor device and manufacturing method thereof
10/27/2005US20050236640 Laminates for encapsulating devices
10/27/2005US20050236639 Semiconductor light emitting device and fabrication method thereof
10/27/2005US20050236638 Semiconductor light emitting device
10/27/2005US20050236637 High power, high luminous flux light emitting diode and method of making same
10/27/2005US20050236634 Side-emission type semiconductor light-emitting device and manufacturing method thereof
10/27/2005US20050236633 Substrate buffer structure for group III nitride devices
10/27/2005US20050236632 Vertical electrode structure of gallium nitride based light emitting diode
10/27/2005US20050236626 Semiconductor device, producing method of semiconductor substrate, and producing method of semiconductor device
10/27/2005US20050236625 Vertical thin film transistor
10/27/2005US20050236624 Thin film transistor array substrate for liquid crystal display and method of fabricating the same
10/27/2005US20050236623 Semiconductor device
10/27/2005US20050236622 Electronic device and method of manufacturing the same
10/27/2005US20050236621 Solid-state imaging device and method of manufacturing the same
10/27/2005US20050236620 Organic EL device and electronic apparatus
10/27/2005US20050236619 CMOS-compatible integration of silicon-based optical devices with electronic devices
10/27/2005US20050236618 Semiconductor device
10/27/2005US20050236616 Reliable semiconductor structure and method for fabricating
10/27/2005US20050236615 Active matrix substrate and display device
10/27/2005US20050236613 Quantum-well memory device and method for making the same
10/27/2005US20050236365 Dry etching method and semiconductor device
10/27/2005US20050236357 etching the semiconductor substrate so as to form nanowires in a direction substantially perpendicular to the surface of the semiconductor substrate
10/27/2005US20050236091 Manufacturing method of a device
10/27/2005DE10361136B4 Halbleiterdiode und IGBT Semiconductor diode and IGBT
10/27/2005DE102005012921A1 Halbleiterlichtemittiervorrichtung und Verfahren zu deren Herstellung Halbleiterlichtemittiervorrichtung and processes for their preparation
10/27/2005DE102005012356A1 Wet-etch composition for manufacturing e.g. electrode of a capacitor for semiconductor device comprises peracetic acid and fluorinated acid
10/27/2005DE102004017967A1 Electronic module employing charge-mass reciprocal effect, for information processing, operates using exchange between mass and charge with moving micro or nano particles
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