Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2005
10/12/2005CN1681094A Method of improving residue and thermal characteristics of semiconductor device
10/12/2005CN1681093A Method for manufacturing a semiconductor device having a W/WN/polysilicon layered film
10/12/2005CN1681089A Semiconductor device and method of manufacturing the same
10/12/2005CN1681087A Method of manufacturing a semiconductor device and semiconductor device made thereby
10/12/2005CN1680862A 液晶显示装置 The liquid crystal display device
10/12/2005CN1680861A Tft LCD, laminated capacitor and forming method thereof
10/12/2005CN1680860A Liquid crystal display and thin film transistor array panel therefor
10/12/2005CN1680859A Substrate, method of manufacturing the same and display apparatus having the same
10/12/2005CN1680848A Semi-reflecting and semi-penetrating liquid-crystal displaying device
10/12/2005CN1680843A 液晶显示装置及其驱动方法 The liquid crystal display device and driving method
10/12/2005CN1223097C Thick film millimeter wave transceiver module
10/12/2005CN1223009C Semiconductor device
10/12/2005CN1223008C Semiconductor device and method of mfg. same
10/12/2005CN1223007C Semiconductor device and mfg. method thereof
10/12/2005CN1223006C Lateral thin-film silicon-on-insulator (SOI) PMOS device having drain extension region
10/12/2005CN1223005C MOS device and manufacturing process thereof
10/12/2005CN1223004C Semiconductor device and manufacture thereof
10/12/2005CN1223003C Non-volatile semiconductor memory
10/12/2005CN1223000C Pot channel type capacitor with epitaxial hidden layer
10/12/2005CN1222999C Channel condenser with epitaxial buried layer
10/12/2005CN1222992C Self-alignment method of semiconductor storage array and storage array made therefrom
10/12/2005CN1222988C Manufacture procedure of flash memory units
10/12/2005CN1222987C Non-volatile memory with source side boron implantation
10/12/2005CN1222986C Manufacturing method for semiconductor device and semiconductor device
10/12/2005CN1222984C Method for producing microelectronic component and component produced according to said method
10/12/2005CN1222983C Indium-enhanced bipolar transistor
10/12/2005CN1222642C Semi-insulating silicon carbide without vanadium domination
10/11/2005US6954723 Device simulation method, device simulation system and device simulation program
10/11/2005US6954473 Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay
10/11/2005US6954382 Multiple use memory chip
10/11/2005US6954381 EEPROM with split gate source side injection with sidewall spacers
10/11/2005US6954372 Magnetic storage element, production method and driving method therefor, and memory array
10/11/2005US6954164 Digital to analog converter transistor array and method of layout
10/11/2005US6953993 Acceleration sensor and method of manufacturing acceleration sensor
10/11/2005US6953981 Semiconductor device with deep substrates contacts
10/11/2005US6953979 Semiconductor device, method of manufacturing same and method of designing same
10/11/2005US6953978 Thin film transistor type optical sensor
10/11/2005US6953976 Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern
10/11/2005US6953975 Semiconductor integrated circuit device
10/11/2005US6953972 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
10/11/2005US6953970 Scalable self-aligned dual floating gate memory cell array and methods of forming the array
10/11/2005US6953969 MOSFET for an open-drain circuit and semiconductor integrated circuit device employing it
10/11/2005US6953968 High voltage withstanding semiconductor device
10/11/2005US6953967 Semiconductor device and method of manufacturing the same
10/11/2005US6953966 Method of producing semiconductor element and nonvolatile semiconductor memory produced by this method
10/11/2005US6953965 Semiconductor device with source line and fabrication method thereof
10/11/2005US6953964 Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming
10/11/2005US6953963 Flash memory cell
10/11/2005US6953961 DRAM structure and fabricating method thereof
10/11/2005US6953957 Charge transport material including a poly-3,3″-dialkyl-2,2′:5′2″-terthiophene
10/11/2005US6953955 InGaAs/GaAs high electron mobility transistor
10/11/2005US6953954 Plasma oscillation switching device
10/11/2005US6953953 Deep trench isolation for thyristor-based semiconductor device
10/11/2005US6953949 Electro-optical device and electronic apparatus
10/11/2005US6953754 Functional device and method of manufacturing the same
10/11/2005US6953753 Method for manufacturing semiconductor device
10/11/2005US6953747 Method for forming gate oxide in semiconductor device
10/11/2005US6953740 Highly doped III-nitride semiconductors
10/11/2005US6953738 Method and apparatus for forming an SOI body-contacted transistor
10/11/2005US6953736 Process for transferring a layer of strained semiconductor material
10/11/2005US6953732 Method of manufacturing a semiconductor device including a mosfet with nitride sidewalls
10/11/2005US6953731 Fabrication process of a semiconductor device
10/11/2005US6953730 Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
10/11/2005US6953729 Heterojunction field effect transistor and manufacturing method thereof
10/11/2005US6953728 Semiconductor device and method of manufacturing thereof
10/11/2005US6953726 High-density split-gate FinFET
10/11/2005US6953719 Integrating n-type and p-type metal gate transistors
10/11/2005US6953717 Method of manufacturing semiconductor device
10/11/2005US6953715 Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor
10/11/2005US6953714 Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it
10/11/2005US6953713 Electric device, matrix device, electro-optical display device and semiconductor memory having thin-film transistors
10/11/2005CA2243618C Method and device for driving a turn-off thyristor
10/06/2005WO2005094134A1 Organic electroluminescent device, process for fabricating the same and display
10/06/2005WO2005093852A1 Semiconductor device having channel including zinc-indium oxide
10/06/2005WO2005093851A1 Semiconductor device having channel including gallium oxide
10/06/2005WO2005093850A1 Semiconductor device having channel comprising multicomponent metal oxide
10/06/2005WO2005093849A1 Semiconductor device having channel including multicomponent oxide
10/06/2005WO2005093848A1 Semiconductor device having channel including multicomponent oxide
10/06/2005WO2005093847A1 Semiconductor device having channel comprising a mixture of binary oxides
10/06/2005WO2005093846A1 Semiconductor device having channel fabricated from multicomponent oxide
10/06/2005WO2005093845A1 Semiconductor device and method for manufacture thereof
10/06/2005WO2005093844A1 Semiconductor device
10/06/2005WO2005093843A1 Semiconductor device and semiconductor device manufacturing method
10/06/2005WO2005093842A1 Semiconductor device
10/06/2005WO2005093841A2 Trench insulated gate field effect transistor
10/06/2005WO2005093840A1 Process for producing schottky junction type semiconductor device
10/06/2005WO2005093837A1 Flash memory device utilizing nanocrystals embeded in polymer
10/06/2005WO2005093822A1 Method for the epitaxial deposition of an si-based material on a layer of si-based material belonging to a semiconductor-on-insulator-type substrate
10/06/2005WO2005093813A1 Method for manufacturing thin film transistor
10/06/2005WO2005093812A1 Transistor with adapted source, drain and channel materials and integrated circuit comprising same
10/06/2005WO2005093811A1 Method for manufacturing self-aligned thin film transistor
10/06/2005WO2005093801A1 Laser irradiation method and laser irradiation apparatus
10/06/2005WO2005093796A1 Bipolar semiconductor device and process for producing the same
10/06/2005WO2005093794A1 Method for making a field-effect transistor with diamond-like carbon channel and resulting transistor
10/06/2005WO2005093649A1 Adiabatic quantum computation with superconducting qubits
10/06/2005WO2005092901A1 Novel compound and organic electronic device using such compound
10/06/2005WO2005092605A1 Structures and methods for increasing the speed of electroactive polymers
10/06/2005WO2005091988A2 Method and device with durable contact on silicon carbide
10/06/2005WO2005091966A2 Method and apparatus for improving sensitivity in vertical color cmos image sensors
10/06/2005WO2005091799A2 Optimized trench power mosfet with integrated schottky diode
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