Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2005
09/29/2005US20050212065 NROM memory device with a high-permittivity gate dielectric formed by the low temperature oxidation of metals
09/29/2005US20050212064 Transistor with reduced gate-to-source capacitance and method therefor
09/29/2005US20050212063 Thin-film transistor formed on insulating substrate
09/29/2005US20050212062 Light collector for an LED array
09/29/2005US20050212061 Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes
09/29/2005US20050212060 Semiconductor device and method for manufacturing the same
09/29/2005US20050212059 Memory device with quantum dot and method for manufacturing the same
09/29/2005US20050212058 Resistance-reduced semiconductor device and fabrication thereof
09/29/2005US20050212057 Semiconductor device and manufacturing method thereof
09/29/2005US20050212056 Semiconductor device and method of manufacturing the same
09/29/2005US20050212055 Field effect transistor
09/29/2005US20050212054 Semiconductor device and method of manufacturing the same
09/29/2005US20050212053 Super-junction semiconductor element and method of fabricating the same
09/29/2005US20050212051 Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies
09/29/2005US20050212050 Device for electrostatic discharge protection and method of manufacturing the same
09/29/2005US20050212049 Semiconductor device and process for producing the same
09/29/2005US20050212048 Integrated switch device
09/29/2005US20050212047 Thin film transistor substrate and manufacturing method thereof
09/29/2005US20050212043 Semiconductor device and manufacturing method thereof
09/29/2005US20050212042 Semiconductor device with structure for improving breakdown voltage
09/29/2005US20050212041 Novel process method of source drain spacer engineering to improve transistor capacitance
09/29/2005US20050212040 Semiconductor device having gate sidewall structure in silicide process and producing method of the semiconductor device
09/29/2005US20050212039 Angled implant for shorter trench emitter
09/29/2005US20050212038 Leakage control in semiconductor apparatus and fabricating method
09/29/2005US20050212037 Semiconductor memory cell, method for fabricating it and semiconductor memory device
09/29/2005US20050212036 Semiconductor memory device and method of manufacturing the same
09/29/2005US20050212035 Semiconductor storage device and manufacturing method thereof
09/29/2005US20050212034 Nonvolatile semiconductor memory device and manufacturing method thereof
09/29/2005US20050212033 Memory device with high dielectric constant gate dielectrics and metal floating gates
09/29/2005US20050212032 Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
09/29/2005US20050212031 Semiconductor device and method for manufacturing same
09/29/2005US20050212030 Semiconductor capacitor and mosfet fitted therewith
09/29/2005US20050212029 Semiconductor device and method for manufacturing same
09/29/2005US20050212028 Semiconductor device
09/29/2005US20050212027 Vertical device with optimal trench shape
09/29/2005US20050212026 Trench capacitors with insulating layer collars in undercut regions and method of fabricating the same
09/29/2005US20050212024 Memory device with an active material embedded in an insulating material
09/29/2005US20050212023 Semiconductor memory device, and fabrication method thereof
09/29/2005US20050212020 Semiconductor device and manufacturing method thereof
09/29/2005US20050212018 Conductive lines buried in insulating areas
09/29/2005US20050212017 Vehicle actuated gate apparatus
09/29/2005US20050212014 Semiconductor device and semiconductor sensor
09/29/2005US20050212013 Gate circuit and delay circuit
09/29/2005US20050212012 Horizontal MOS transistor
09/29/2005US20050212011 Architecture for mask programmable devices
09/29/2005US20050212010 Micro-protruding structure
09/29/2005US20050212009 Semiconductor device having electrostatic destruction protection circuit using thyristor as protection element
09/29/2005US20050212007 Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
09/29/2005US20050212004 Spatial light modulator with robust mirror substrate condition
09/29/2005US20050212003 Organic light-emitting display device
09/29/2005US20050212002 Semiconductor light emitting device
09/29/2005US20050212000 Method for manufacturing light emitting device, and electronic device
09/29/2005US20050211999 Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
09/29/2005US20050211998 Light active sheet material
09/29/2005US20050211997 Solid-state element and solid-state element device
09/29/2005US20050211996 Intersubband detector with avalanche multiplier region
09/29/2005US20050211993 Opposed terminal structure having a nitride semiconductor element
09/29/2005US20050211987 Semiconductor device, manufacturing method thereof and manufacturing apparatus therefor
09/29/2005US20050211985 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
09/29/2005US20050211984 Light emitting device, method for manufacturing thereof and electronic appliance
09/29/2005US20050211983 Display device and manufacturing method of the same
09/29/2005US20050211982 Strained silicon with reduced roughness
09/29/2005US20050211978 Memory devices based on electric field programmable films
09/29/2005US20050211977 Organic semiconductor device and method of producing the same
09/29/2005US20050211976 Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor
09/29/2005US20050211975 Thin film transistor and semiconductor device using the same
09/29/2005US20050211972 Organic field effect transistor with off-set threshold voltage and the use thereof
09/29/2005US20050211971 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device
09/29/2005US20050211970 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects
09/29/2005US20050211375 Method of manufacturing a semiconductor device
09/29/2005US20050211285 Mobility aiding device
09/29/2005US20050211236 Dicing saw with variable indexing capability
09/29/2005DE3812135B4 Verfahren zum Herstellen von elektrischen Kontakten hoher Ausbeute an amorphes N+-Silizium A method for producing electrical contacts high yield of amorphous N + -silicon
09/29/2005DE19923466B4 Junctionsisolierter Lateral-MOSFET für High-/Low-Side-Schalter Junction Insulated Lateral MOSFET for high / low-side switch
09/29/2005DE19818024B4 Halbleitervorrichtung mit einer Trennstruktur für eine hohe Haltespannung A semiconductor device comprising a separation structure for a high withstand voltage
09/29/2005DE19731944B4 Testmusterbereich bzw. eine Testelementgruppe zur Lebensdauerauswertung von Ladungsträgern in einem Halbleitersubstrat Test pattern area or a test element group for lifetime evaluation of charge carriers in a semiconductor substrate
09/29/2005DE10302625B4 Bipolartransistor und Verfahren zum Herstellen desselben Of the same bipolar transistor and method for producing
09/29/2005DE10250608B4 Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung Thyristor device with improved locking behavior in the reverse direction
09/29/2005DE102005011703A1 pn-Diode auf der Basis von Silicumcarbid und Verfahren zu deren Herstellung pn-diode on the basis of silicon carbide and methods for their preparation
09/29/2005DE102005011702A1 Halbleiterbauelement, insbesondere Diode, und zugehöriges Herstellungsverfahren Semiconductor component, in particular diode, and associated production method
09/29/2005DE102005008323A1 Optische Halbleitervorrichtung und diese verwendende elektronische Anordnung Optical semiconductor device and electronic device employing the same
09/29/2005DE102004031304A1 Transistor for semiconductor device, comprises insulating film spacer that fills space between lower surface of gate electrode and upper surface of substrate, and source/drain region disposed on substrate at both sides of gate electrode
09/29/2005DE102004011703A1 Halbleiterbauelement mit integrierter Zener-Diode und Verfahren zur Herstellung A semiconductor device with an integrated zener diode and methods for preparing
09/29/2005DE102004011432A1 Semiconductor memory cell e.g. for field effect transistors, has ferroelectric material zone designed with different remanent ferroelectric polarization states
09/29/2005DE102004011430A1 Halbleiterspeicherzelle, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung A semiconductor memory cell, process for their preparation and the semiconductor memory device
09/29/2005DE102004011203A1 Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung A method for mounting semiconductor chips and corresponding semiconductor chip system
09/29/2005DE102004010840A1 Verfahren zum Betreiben einer elektrischen beschreib- und löschbaren nicht flüchtigen Speicherzelle und eine Speichereinrichtung zum elektrischen nicht flüchtigen Speichern A method of operating an electrical writable and erasable non-volatile memory cell and a memory device for storing nonvolatile electric
09/29/2005DE102004007410A1 Verfahren zum Herstellen einer Speicherzelle A method for fabricating a memory cell
09/29/2005DE10005774B4 DMOS-Zelle mit Schottky-Diode DMOS cell with Schottky Diode
09/29/2005CA2557702A1 Self-aligned silicon carbide semiconductor devices and methods of making the same
09/28/2005EP1580825A1 Memory devices based on electric field programmable films
09/28/2005EP1580822A1 Organic field-effect-transistor and method for its production
09/28/2005EP1580815A2 Integrated switch device
09/28/2005EP1580813A2 Semiconductor substrate, semiconductor device, and manufacturing methods for them
09/28/2005EP1580811A2 Passivation films for organic thin film transistors
09/28/2005EP1580547A1 Fluid sensor and methods
09/28/2005EP1579509A1 Group iii nitride based flip-chip integrated circuit and method for fabricating
09/28/2005EP1579492A1 Thin film transistor, method for producing a thin film transistor and electronic device having such a transistor
09/28/2005EP1579488A1 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
09/28/2005EP1579486A1 Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same