Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2005
09/15/2005US20050202656 Method of fabrication of semiconductor device
09/15/2005US20050202655 Method for manufacturing semiconductor device
09/15/2005US20050202654 Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions
09/15/2005US20050202653 High density plasma process for silicon thin films
09/15/2005US20050202652 High-density plasma hydrogenation
09/15/2005US20050202644 Method for fabricating metal gate structures
09/15/2005US20050202643 Transistor and method for manufacturing the same
09/15/2005US20050202641 Radiation-hardened transistor fabricated by modified CMOS process
09/15/2005US20050202640 Gate technology for strained surface channel and strained buried channel MOSFET devices
09/15/2005US20050202639 Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots
09/15/2005US20050202636 Single-pole component manufacturing
09/15/2005US20050202633 Method of manufacturing nonvolatile memory cell
09/15/2005US20050202632 Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
09/15/2005US20050202627 Method for forming a dielectric layer in a semiconductor device
09/15/2005US20050202625 Semiconductor device and manufacturing method thereof
09/15/2005US20050202618 Semiconductor device and manufacturing method of the same
09/15/2005US20050202617 Gate structure for a transistor and method for fabricating the gate structure
09/15/2005US20050202613 T-gate formation
09/15/2005US20050202612 Thin film transistor and method of manufacturing the same
09/15/2005US20050202609 Integral-type liquid crystal panel with image sensor function
09/15/2005US20050202608 Locally thinned fins
09/15/2005US20050202607 Method of forming FinFET gates without long etches
09/15/2005US20050202606 Semiconductor device and method of forming the same
09/15/2005US20050202605 Method of manufacturing semiconductor device
09/15/2005US20050202604 Integrated semiconductor device and method to make same
09/15/2005US20050202603 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
09/15/2005US20050202602 Method of manufacturing a semiconductor device
09/15/2005US20050202601 Electro-optical device, method of manufacturing the same, and electronic apparatus
09/15/2005US20050202599 Method of forming metal pattern having low resistivity
09/15/2005US20050202587 Vertical field-effect transistor, method of manufacturing the same, and display device having the same
09/15/2005US20050202577 Manufacturing and testing of electrostatic discharge protection circuits
09/15/2005US20050202348 Substrate, conductive substrate, fine structure substrate, organic field effect transistor and manufacturing method thereof
09/15/2005US20050202312 Photosensitive device
09/15/2005US20050202273 comprising anchoring group, charge transfer group, light emissive group; improved transport of electrical energy, improved robustness and thermal stability, improved visual characteristics, reduced energy requirements and lower manufacturing costs; efficiency, heat resistance, lightweight
09/15/2005US20050202222 High dielectric constant composition and method of making same
09/15/2005US20050201763 Optical element wafer and method for manufacturing the same, burn-in apparatus for optical element wafer, and burn-in method for optical element wafer
09/15/2005US20050201189 Nonvolatile semiconductor memory apparatus and method of producing the same
09/15/2005US20050201175 Radio frequency arrangement, method for producing a radio frequency arrangement and use of the radio frequency arrangement
09/15/2005US20050201154 Scalable self-aligned dual floating gate memory cell array and methods of forming the array
09/15/2005US20050201150 Method and apparatus for semiconductor device and semiconductor memory device
09/15/2005US20050201149 Nano-enabled memory devices and anisotropic charge carrying arrays
09/15/2005US20050201134 Memory component with asymmetrical contact row
09/15/2005US20050201027 Semiconductor output circuit
09/15/2005US20050200807 Defect correction based on "virtual" lenslets
09/15/2005US20050200768 Array substrate for liquid crystal display device and method of manufacturing the same
09/15/2005US20050200618 Light-emitting display
09/15/2005US20050200384 Mosgate driver integrated circuit with adaptive dead time
09/15/2005US20050200039 Materials and methods for freeform fabrication of solid three-dimensional objects using fusible, water-containing support materials
09/15/2005US20050200028 Encapsulated semiconductor component having thinned die with conductive vias
09/15/2005US20050200022 Semiconductor device
09/15/2005US20050200021 Semiconductor device
09/15/2005US20050200000 Carrier module
09/15/2005US20050199984 High-performance cmos soi devices on hybrid crystal-oriented substrates
09/15/2005US20050199982 High power diode utilizing secondary emission
09/15/2005US20050199981 Uni-directional PIN or NIP conducting low capacitance transient voltage suppressors and steering diodes
09/15/2005US20050199980 Semiconductor device and method of manufacturing same
09/15/2005US20050199978 Semiconductor device and manufacturing method thereof
09/15/2005US20050199977 Structure and method for forming a dielectric chamber and electronic device including the dielectric chamber
09/15/2005US20050199976 Rear-illuminated-type photodiode array
09/15/2005US20050199975 Circuit device
09/15/2005US20050199973 Differential pressure sensor
09/15/2005US20050199968 Semiconductor device and method for fabricating the same
09/15/2005US20050199967 Semiconductor device
09/15/2005US20050199966 Dual work function semiconductor structure with borderless contact and method of fabricating the same
09/15/2005US20050199965 Semiconductor device and method for manufacturing semiconductor device
09/15/2005US20050199964 CMOS circuit including double-insulated-gate field-effect transistors
09/15/2005US20050199963 Semiconductor device and manufacturing method therefor
09/15/2005US20050199962 Semiconductor device and method for fabricating the same
09/15/2005US20050199961 Semiconductor device
09/15/2005US20050199960 Semiconductor device
09/15/2005US20050199959 Semiconductor device
09/15/2005US20050199958 Method for selectively stressing MOSFETs to improve charge carrier mobility
09/15/2005US20050199957 Double gate field effect transistor with diamond film
09/15/2005US20050199956 Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures
09/15/2005US20050199954 Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
09/15/2005US20050199953 Power semiconductor device
09/15/2005US20050199952 Termination structure for trench DMOS device and method of making the same
09/15/2005US20050199951 Semiconductor device, method for manufacturing the semiconductor device, and integrated circuit including the semiconductor device
09/15/2005US20050199950 Tri-gate devices and methods of fabrication
09/15/2005US20050199949 Tri-gate devices and methods of fabrication
09/15/2005US20050199948 Fin field effect transistors with epitaxial extension layers and methods of forming the same
09/15/2005US20050199946 Semiconductor memory device and manufacturing method thereof
09/15/2005US20050199945 Nonvolatile memory and nonvolatile memory manufacturing method
09/15/2005US20050199944 [non-volatile memory cell]
09/15/2005US20050199943 Nonvolatile semiconductor memory
09/15/2005US20050199942 Semiconductor memory with vertical memory transistors and method for fabricating it
09/15/2005US20050199941 Semiconductor device fabrication method
09/15/2005US20050199940 Nonvolatile semiconductor memory device and manufacturing method thereof
09/15/2005US20050199939 Self aligned non-volatile memory cells and processes for fabrication
09/15/2005US20050199938 Nonvolatile semiconductor memory and a fabrication method for the same
09/15/2005US20050199937 3D flash EEPROM cell and methods of implementing the same
09/15/2005US20050199936 Nonvolatile memory solution using single-poly pflash technology
09/15/2005US20050199934 Electronic component having an integrated passive electronic component and associated production method
09/15/2005US20050199933 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same
09/15/2005US20050199930 Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same
09/15/2005US20050199929 Capacitor device and semiconductor device having the same, and capacitor device manufacturing method
09/15/2005US20050199924 Optimized ferroelectric material crystallographic texture for enhanced high density feram
09/15/2005US20050199920 Fin field effect transistors with low resistance contact structures and methods of manufacturing the same
09/15/2005US20050199919 Semiconductor integrated circuit and method for manufacturing the same
09/15/2005US20050199918 Optimized trench power MOSFET with integrated schottky diode
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