Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2005
10/13/2005US20050224866 Semiconductor memory device and manufacturing method thereof
10/13/2005US20050224865 Circuit layout and structure for a non-volatile memory
10/13/2005US20050224864 Semiconductor device and its manufacture method
10/13/2005US20050224863 Semiconductor device and method of manufacturing the same
10/13/2005US20050224862 Nonvolatile semiconductor memory and a fabrication method for the same
10/13/2005US20050224861 Isolation-less, contact-less array of nonvolatile memory cells each having a floating gate for storage of charges, and methods of manufacturing, and operating therefor
10/13/2005US20050224860 Conductive spacers extended floating gates
10/13/2005US20050224859 Semiconductor storage device
10/13/2005US20050224857 MOS transistor
10/13/2005US20050224856 Trench capacitor and a method for manufacturing the same
10/13/2005US20050224854 Semiconductor memory device and method of manufacturing the same
10/13/2005US20050224852 Offset vertical device
10/13/2005US20050224851 Semiconductor device and method for manufacturing thereof
10/13/2005US20050224850 Mram device having low-k inter-metal dielectric
10/13/2005US20050224848 Semiconductor device and method for manufacturing semiconductor device
10/13/2005US20050224847 Semiconductor memory device and manufacturing method for the same
10/13/2005US20050224846 Semiconductor device and method of manufacturing the same
10/13/2005US20050224844 Solid-state image sensing device
10/13/2005US20050224842 Solid-state imaging device, method for driving dolid-state imaging device, imaging method, and imager
10/13/2005US20050224840 Dual-oxide transistors for the improvement of reliability and off-state leakage
10/13/2005US20050224838 Semiconductor device with heterojunction
10/13/2005US20050224836 Silicon controlled rectifier
10/13/2005US20050224831 P-type nitride semiconductor structure and bipolar transistor
10/13/2005US20050224828 Using multiple types of phosphor in combination with a light emitting device
10/13/2005US20050224824 Gallium nitride-based semiconductor light-emitting device
10/13/2005US20050224823 High power, high luminous flux light emitting diode and method of making same
10/13/2005US20050224822 Light-emitting diode array having an adhesive layer
10/13/2005US20050224810 Light-emitting device having pnpn structure and light-emitting device array
10/13/2005US20050224809 Transistors having buried p-type layers beneath the source region and methods of fabricating the same
10/13/2005US20050224808 Silicon carbide semiconductor devices with a regrown contact layer
10/13/2005US20050224807 Low dielectric constant carbon films
10/13/2005US20050224804 Optical property normalization for a transparent electrical device
10/13/2005US20050224802 Substrate, method of manufacturing the same and display apparatus having the same
10/13/2005US20050224801 Electrode structure, fabrication method thereof and PDP utilizing the same
10/13/2005US20050224800 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
10/13/2005US20050224799 Semiconductor device and method for fabricating the same
10/13/2005US20050224798 Process to improve transistor drive current through the use of strain
10/13/2005US20050224797 CMOS fabricated on different crystallographic orientation substrates
10/13/2005US20050224796 Semiconductor device and method of manufacture thereof
10/13/2005US20050224795 Display device
10/13/2005US20050224794 Semiconductor device manufacturing method
10/13/2005US20050224792 Novel test structure for speeding a stress-induced voiding test and method of using same
10/13/2005US20050224790 Nanowire light emitting device and method of fabricating the same
10/13/2005US20050224789 Top-emission organic electroluminescent display and method of fabricating the same
10/13/2005US20050224786 Microelectronic device with depth adjustable sill and method of fabrication thereof
10/13/2005US20050224785 Quantum logic gate and quantum logic operation method using exciton
10/13/2005US20050224784 Adiabatic quantum computation with superconducting qubits
10/13/2005US20050224780 Nanowire light emitting device
10/13/2005US20050224779 Large scale patterned growth of aligned one-dimensional nanostructures
10/13/2005US20050224778 Forming self-aligned nano-electrodes
10/13/2005US20050224755 Liquid crystalline organic semiconductor material and organic semiconductor structure using the same
10/13/2005US20050224698 Method for detecting photoelectric conversion amount and photoelectric converter, method for inputting image and device for inputting image, two-dimesional image sensor and method for driving two-dimensional image sensor
10/13/2005US20050224455 Method for making a semiconductor device using treated photoresist as an implant mask
10/13/2005US20050224251 Low moisture absorptive circuitized substrate, method of making same, electrical assembly utilizing same, and information handling system utilizing same
10/13/2005US20050224111 Photovoltaic device
10/13/2005US20050223986 Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
10/13/2005DE10393627T5 Lateraler Kurzkanal-dmos, Verfahren zur Herstellung desselben und Halbleiterbauelement A lateral short-channel DMOS, the same method for producing the semiconductor component and
10/13/2005DE102005013575A1 Niedertemperatur-, Langzeitwärmebehandlung von Nickelkontakten, um einen Zwischenflächenwiderstand zu verringern Low-temperature, long-term heat treatment of nickel contacts, to reduce an interface resistance
10/13/2005DE102005012355A1 Kompakter Drucksensor mit hoher Korrosionsbeständigkeit und hoher Genauigkeit Compact pressure sensor with high corrosion resistance and high accuracy
10/13/2005DE102005011658A1 Halbleiteranordnung mit einem beweglichen Teil A semiconductor device comprising a movable part
10/13/2005DE102005010393A1 Halbleitersensor zur Erfassung einer dynamischen Grösse A semiconductor sensor for detecting a dynamic amount
10/13/2005DE102004063609A1 Fabrication of nonvolatile memory device, such as read only memory, comprises sequentially forming gate oxide layer, polysilicon layer for first control gates, buffer oxide layer, and buffer nitride layer on semiconductor substrate
10/13/2005DE102004032477A1 Transistor einer nicht flüchtigen Speichervorrichtung mit einer dielektrischen Gatestruktur, welche fähig zum Einfangen von Ladungen ist, und ein Verfahren zum Herstellen der Vorrichtung Transistor of a non-volatile memory device having a gate dielectric structure which is capable of trapping charges, and a method for manufacturing the device
10/13/2005DE102004014928A1 High voltage transistor used in submicron technology comprises sinks of the same conductivity extending from the source and drain to the substrate
10/13/2005DE102004012855A1 Herstellungsverfahren für einen Grabenkondensator mit Isolationskragen Manufacturing method of a grave capacitor insulation collar
10/13/2005DE102004012629A1 Feldeffekt-Halbleiterschalter und Verfahren zu seiner Herstellung Field effect semiconductor switch and process for its preparation
10/13/2005DE102004012553A1 Speicherbauelement mit asymmetrischer Kontaktreihe Memory device with asymmetric contact number
10/13/2005DE102004007690B3 Integrierte Schaltungsanordnung An integrated circuit device
10/13/2005CA2561277A1 Carbon nanotube-based electronic devices made by electronic deposition and applications thereof
10/13/2005CA2552281A1 Integrated circuit with a very small-sized reading diode
10/12/2005EP1585176A1 Ferroelectric capacitor and method for fabricating the same
10/12/2005EP1584973A1 Arrangement of TFT and pixel electrodes for liquid crystal display
10/12/2005EP1584110A1 Edge ring termination for silicon carbide devices
10/12/2005EP1584107A2 Adaptive negative differential resistance device
10/12/2005EP1508174A4 Light emitting diode light source
10/12/2005EP1414078A4 Quantum supercapacitor
10/12/2005EP1397808B1 Steering gate and bit line segmentation in non-volatile memories
10/12/2005EP0922301B1 Substrate with conductor formed of low-resistance aluminum alloy
10/12/2005CN1682380A Method and circuit device for forming integrated PIN diode
10/12/2005CN1682376A Semiconductor device and method of manufacturing such a device
10/12/2005CN1682372A Word and bit line arrangement for a fin FET semiconductor memory
10/12/2005CN1682371A Ferroelectric capacitors and their manufacutre
10/12/2005CN1682369A Semiconductor substrate, semiconductor circuits formed there and manufacture thereof
10/12/2005CN1682368A Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method
10/12/2005CN1682361A Method of fabricating a self-aligned non-volatile memory cell
10/12/2005CN1682357A Method of forming insulation film on semiconductor substrate
10/12/2005CN1682259A 显示器件及其制造方法 A display device and manufacturing method thereof
10/12/2005CN1681975A Nanostructures and methods for manufacturing the same
10/12/2005CN1681375A Method for forming film pattern, method for manufacturing device, electro-optical apparatus, and electronic apparatus
10/12/2005CN1681361A Display device and manufacturing method of the same
10/12/2005CN1681173A Semiconductor light-emitting element and method for manufacturing the same
10/12/2005CN1681138A Semiconductor light-emitting device
10/12/2005CN1681132A Variable capacitor and differential variable capacitor
10/12/2005CN1681130A Active pixel having buried transistor
10/12/2005CN1681128A Flash memory with enhanced program and erase coupling and process of fabricating the same
10/12/2005CN1681125A 半导体集成电路 The semiconductor integrated circuit
10/12/2005CN1681124A Integrated circuit structure and its forming method
10/12/2005CN1681108A Electronic circuit device having silicon substrate
10/12/2005CN1681107A Sidewall spacer for semiconductor device and fabrication method thereof
10/12/2005CN1681103A Methods of forming semiconductor devices having buried oxide patterns and devices related thereto
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